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T. Petrisor

Publications and source records attributed to T. Petrisor.

5 recordsLinked to original sources

Radio-Frequency Multiply-And-Accumulate Operations with Spintronic Synapses

Exploiting the physics of nanoelectronic devices is a major lead for implementing compact, fast, and energy efficient artificial intelligence. In this work, we propose an original road in this direction, where assemblies of spintronic resonators used as artificial synapses can classify an-alogue radio-frequency signals directly without digitalization. The resonators convert the ra-dio-frequency input signals into direct voltages through the spin-diode effect. In the process, they multiply the input signals by a synaptic weight, which depends on their resonance fre-quency. We demonstrate through physical simulations with parameters extracted from exper-imental devices that frequency-multiplexed assemblies of resonators implement the corner-stone operation of artificial neural networks, the Multiply-And-Accumulate (MAC), directly on microwave inputs. The results show that even with a non-ideal realistic model, the outputs obtained with our architecture remain comparable to that of a traditional MAC operation. Us-ing a conventional machine learning framework augmented with equations describing the physics of spintronic resonators, we train a single layer neural network to classify radio-fre-quency signals encoding 8x8 pixel handwritten digits pictures. The spintronic neural network recognizes the digits with an accuracy of 99.96 %, equivalent to purely software neural net-works. This MAC implementation offers a promising solution for fast, low-power radio-fre-quency classification applications, and a new building block for spintronic deep neural net-works.

cond-mat.dis-nn

Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based MTJs has been insured by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence, in the real space, is investigated using High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman-Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double negative impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Delta_1 states across the (100) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature.

cond-mat.mtrl-sci

Magnetic and structural anisotropies of Co2FeAl Heusler alloy epitaxial thin films

This paper shows the correlation between chemical order, lattice strains and magnetic properties of Heusler Co2FeAl films epitaxially grown on MgO(001). A detailed magnetic characterization has been performed using vector field magnetometery combined with numerical Stoner-Wohlfarth analysis. We demonstrate the presence of three types of in-plane anisotropies: one biaxial, as expected for the cubic symmetry, and other two uniaxial ones. The three anisotropies show different behavior with the annealing temperature. The biaxial anisotropy shows a monotonous increase. The uniaxial anisotropy, parallel with the hard biaxial axes, related to the chemical homogeneity, decreases, while the other, supposed to have magnetostatic origin, remains constant.

cond-mat.mtrl-sci

Strong Reduction of the Field-Dependent Microwave Surface Resistance in YBCO with BaZrO_3 Inclusions

We present measurements of the magnetic field dependent microwave surface resistance in laser-ablated YBa$_2$Cu$_3$O$_{7-δ}$ films on SrTiO$_3$ substrates. BaZrO$_3$ crystallites were included in the films using composite targets containing BaZrO$_3$ inclusions with mean grain size smaller than 1 $μ$m. X-ray diffraction showed single epitaxial relationship between BaZrO$_3$ and YBa$_2$Cu$_3$O$_{7-δ}$. The effective surface resistance was measured at 47.7 GHz for 60$< T <$90 K and 0$< μ_0H <$0.8 T. The magnetic field had a very different effect on pristine YBa$_2$Cu$_3$O$_{7-δ}$ and YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$, while for $μ_0H=$0 only a reduction of $T_c$ in the YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$ film was observed, consistent with dc measurements. At low enough $T$, in moderate fields YBa$_2$Cu$_3$O$_{7-δ}$/BaZrO$_3$ exhibited an intrinsic thin film resistance lower than the pure film. The results clearly indicate that BaZrO$_3$ inclusions determine a strong reduction of the field-dependent surface resistance. From the analysis of the data in the framework of simple models for the microwave surface impedance in the mixed state we argue that BaZrO$_3$ inclusions determine very steep pinning potentials.

cond-mat.supr-con

Microwave properties of YBa$_2$Cu$_3$O$_{7-δ}$ films with BaZrO$_3$ nanoinclusions

We present measurements of the microwave complex surface impedance at 47.7 GHz in YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) films deposited by pulsed laser deposition with the explicit goal to introduce BaZrO$_3$ (BZO) nanoinclusions. Composite targets obtained by addition of BZO powder in molar percents ranging from 2.5 to 7 mol.% have been prepared and characterized. Measurements of the microwave surface impedance indicate a broadened transition in zero field, however compensated by a very large pinning frequency, indicating that while intergrain properties are still to be optimized the effect of nanometric inclusions substantially enhances the intragrain vortex pinning.

cond-mat.supr-con