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T. Smoleński

Publications and source records attributed to T. Smoleński.

At least 19 recordsLinked to original sources

Out-of-equilibrium spin-valley dynamics of ferromagnets in topological Chern bands

Understanding quantum matter far from equilibrium is a central goal of modern physics. Twisted MoTe2 bilayers constitute a promising platform for exploring this frontier by combining strong Coulomb interactions, nontrivial band geometry, and optical control. Here, we exploit this setting to investigate the role of topology and many-body correlations in the out-of-equilibrium dynamics of ferromagnets in Chern bands. Using a focused circularly polarized light pulse, we create a local magnetic domain oriented opposite to an external magnetic field and directly image its subsequent spin-valley relaxation in spatially and time-resolved low-temperature experiments. We demonstrate that in the vicinity of both integer and fractional Chern insulating states, the dynamics is governed by qualitatively different mechanisms than in ferromagnetic metals. Whereas metallic domains collapse by shrinking, Chern domains melt via thermal activation, resulting in drastically different temporal spin evolution and orders-of-magnitude longer relaxation times. These findings demonstrate the influence of topology and strong correlations on far-from-equilibrium collective spin phases, opening new opportunities for dynamical control of ferromagnets in the quantum Hall regime.

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Spectroscopy of Wigner crystal polarons in an atomically thin semiconductor

Strongly interacting electrons in two-dimensional systems can spontaneously break translational symmetry, forming a periodic Wigner crystal. Although these crystals have been realized in several platforms, experimental studies of their collective many-body excitations in the absence of a magnetic field remain an outstanding challenge. Here, we access this regime optically by uncovering Wigner crystal polarons: novel light-matter excitations arising from the dressing of excitons by collective excitations of the Wigner crystal. These hybrid quasiparticles manifest as new optical resonances in cryogenic reflectance spectra of a charge-tunable WSe$_2$ monolayer, appearing concurrently with previously identified exciton umklapp transitions. In contrast to the latter, the energies of Wigner crystal polarons are governed not only by the electronic lattice constant but also by their hybridization with attractive exciton-polarons, whose strength is controlled by electronic interactions. These novel many-body excitations provide an optical interface to the spin state of the Wigner crystal, which as we demonstrate, can be controlled both magnetically and optically. Our work establishes layered materials as a unique platform for exploring dynamical impurity dressing by strongly correlated electronic orders.

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Optical sensing of fractional quantum Hall effect in graphene

Graphene and its van der Waals (vdW) heterostructures provide a unique and versatile playground for explorations of strongly correlated electronic phases, ranging from unconventional fractional quantum Hall (FQH) states in a monolayer system to a plethora of superconducting and insulating states in twisted bilayers. However, the access to those fascinating phases has been thus far entirely restricted to transport techniques, due to the lack of a robust energy bandgap that makes graphene hard to access optically. Here we demonstrate an all-optical, non-invasive spectroscopic tool for probing electronic correlations in graphene using excited Rydberg excitons in an adjacent transition metal dichalcogenide monolayer. Due to their large Bohr radii, Rydberg states are highly susceptible to the compressibility of graphene electrons, allowing us to detect the formation of odd-denominator FQH states at high magnetic fields. Owing to its sub-micron spatial resolution, the technique we demonstrate circumvents spatial inhomogeneities in vdW structures, and paves the way for optical studies of correlated states in twisted bilayer graphene and other optically inactive atomically-thin materials.

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Spin-valley relaxation dynamics of Landau-quantized electrons in MoSe$_2$ monolayer

Non-equilibrium dynamics of strongly correlated systems constitutes a fascinating problem of condensed matter physics with many open questions. Here we investigate the relaxation dynamics of Landau-quantized electron system into spin-valley polarized ground state in a gate-tunable MoSe$_2$ monolayer subjected to a strong magnetic field. The system is driven out of equilibrium with optically injected excitons that depolarize the electron spins and the subsequent electron spin-valley relaxation is probed in time-resolved experiments. We demonstrate that the relaxation rate at millikelvin temperatures sensitively depends on the Landau level filling factor: it becomes faster whenever the electrons form an integer quantum Hall liquid and slows down appreciably at non-integer fillings. Our findings evidence that valley relaxation dynamics may be used as a tool to investigate the interplay between the effects of disorder and strong interactions in the electronic ground state.

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Observation of Wigner crystal of electrons in a monolayer semiconductor

When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two dimensional systems were predicted to spontaneously break continuous translation symmetry and form a quantum crystal. Efforts to observe this elusive state of matter, termed a Wigner crystal (WC), in two dimensional extended systems have primarily focused on electrons confined to a single Landau level at high magnetic fields, but have not provided a conclusive experimental signature of the emerging charge order. Here, we use optical spectroscopy to demonstrate that electrons in a pristine monolayer semiconductor with density $ \lesssim 3 \cdot 10^{11}$ cm$^{-2}$ form a WC. The interactions between resonantly injected excitons and electrons arranged in a periodic lattice modify the exciton band structure so that it exhibits a new umklapp resonance, heralding the presence of charge order. Remarkably, the combination of a relatively high electron mass and reduced dielectric screening allows us to observe an electronic WC state even in the absence of magnetic field. The tentative phase diagram obtained from our Hartree-Fock calculations provides an explanation of the striking experimental signatures obtained up to $B = 16$ T. Our findings demonstrate that charge-tunable transition metal dichalcogenide (TMD) monolayers enable the investigation of previously uncharted territory for many-body physics where interaction energy dominates over kinetic energy, even in the absence of a moire potential or external fields.

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Shubnikov-de Haas oscillations in optical conductivity of monolayer MoSe$_2$

We report polarization-resolved resonant reflection spectroscopy of a charge-tunable atomically-thin valley semiconductor hosting tightly bound excitons coupled to a dilute system of fully spin- and valley-polarized holes in the presence of a strong magnetic field. We find that exciton-hole interactions manifest themselves in hole-density dependent, Shubnikov-de Haas-like oscillations in the energy and line broadening of the excitonic resonances. These oscillations are evidenced to be precisely correlated with the occupation of Landau levels, thus demonstrating that strong interactions between the excitons and Landau-quantized itinerant carriers enable optical investigation of quantum-Hall physics in transition metal dichalcogenides.

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Mechanisms of optical orientation of an individual Mn$^{2+}$ ion spin in a II-VI quantum dot

We provide a theoretical description of the optical orientation of a single Mn$^{2+}$ ion spin under quasi-resonant excitation demonstrated experimentally by Goryca et al. [Phys. Rev. Lett. 103, 087401 (2009)]. We build and analyze a hierarchy of models by starting with the simplest assumptions (transfer of perfectly spin-polarized excitons from Mn-free dot to the other dot containing a single Mn$^{2+}$ spin, followed by radiative recombination) and subsequently adding more features, such as spin relaxation of electrons and holes. Particular attention is paid to the role of the influx of the dark excitons and the process of biexciton formation, which are shown to contribute significantly to the orientation process in the quasi-resonant excitation case. Analyzed scenarios show how multiple features of the excitonic complexes in magnetically-doped quantum dots, such as the values of exchange integrals, spin relaxation times, etc., lead to a plethora of optical orientation processes, characterized by distinct dependencies on light polarization and laser intensity, and occurring on distinct timescales. Comparison with experimental data shows that the correct description of the optical orientation mechanism requires taking into account Mn$^{2+}$ spin-flip processes occurring not only when the exciton is already in the orbital ground state of the light-emitting dot, but also those that happen during the exciton transfer from high-energy states to the ground state. Inspired by the experimental results on energy relaxation of electrons and holes in nonmagnetic dots, we focus on the process of biexciton creation allowed by mutual spin-flip of an electron and the Mn$^{2+}$ spin, and we show that by including it in the model, we obtain good qualitative and quantitative agreement with the experimental data on quasi-resonantly driven Mn$^{2+}$ spin orientation.

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Fine structure of an exciton coupled to a single Fe2+ ion in a CdSe/ZnSe quantum dot

We present a polarization-resolved photoluminescence study of the exchange interaction effects in a prototype system consisting of an individual Fe2+ ion and a single neutral exciton confined in a CdSe/ZnSe quantum dot. Maximal possible number of eight fully linearly-polarized lines in the bright exciton emission spectrum is observed, evidencing complete degeneracy lifting in the investigated system. We discuss conditions required for such a scenario to take place: anisotropy of the electron-hole interaction and the zero-field splitting of the Fe2+ ion spin states. Neglecting of either of these components is shown to restore partial degeneracy of the transitions, making the excitonic spectrum similar to those previously reported for all other systems of quantum dots with single magnetic dopants.

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Direct determination of zero-field splitting for single Co$^{2+}$ ion embedded in a CdTe/ZnTe quantum dot

When Co$^{2+}$ impurity is embedded in semiconductor structure, crystal strain strongly influences zero-filed splitting between Co$^{2+}$ states with spin projection $S_z = \pm 3/2$ and $S_z = \pm 1/2$. Experimental evidences of this effect have been given in previous studies, however direct measurement of the strain induced zero-field splitting has been inaccessible so far. Here this splitting is determined thanks to magneto-optical studies of individual Co$^{2+}$ ion in epitaxial CdTe quantum dot in ZnTe barrier. Using partially allowed optical transitions we measure strain induced zero-field splitting of Co$^{2+}$ ion directly on excitonic photoluminescence spectrum. Moreover, by observation of anticrossing of $S_z = + 3/2$ and $S_z = - 1/2$ Co$^{2+}$ spin states in magnetic field, we determine axial and in-plane components of crystal field acting on Co$^{2+}$. Proposed technique can be applied for optical determination of zero-field splitting of other transition metal ions in quantum dots.

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Anisotropy of in-plane hole g-factor in CdTe/ZnTe quantum dots

Optical studies of a bright exciton provide only limited information about the hole anisotropy in a quantum dot. In this work we present a universal method to study heavy hole anisotropy using a dark exciton in a moderate in-plane magnetic field. By analysis of the linear polarization of the dark exciton photoluminescence we identify both isotropic and anisotropic contributions to the hole g-factor. We employ this method for a number of individual self-assembled CdTe/ZnTe quantum dots, demonstrating a variety of behaviors of in-plane hole g-factor: from almost fully anisotropic to almost isotropic. We conclude that, in general, both contributions play an important role and neither contribution can be neglected.

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Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots

We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X$^+$, X$^-$) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting $δ_{1}=$0.14 meV ($δ_{1}=$0.47 meV); $g$-factor $g=$2.12 ($g=$1.71); diamagnetic shift $γ=$2.5 $μ$eV$/$T$^{2}$ ($γ=$1.3 $μ$eV$/$T$^{2}$). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.

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Epitaxial growth and Photoluminescence Excitation spectroscopy of CdSe Quantum Dots in (Zn,Cd)Se barrier

Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the energy of Mn$^{2+}$ ions internal transition (2.1 eV). This opens a perspective for implementation of epitaxial CdSe QDs doped with several Mn ions as, e. g., the light sources in high quantum yield magnetooptical devices. Polarization resolved Photoluminescence Excitation measurements of individual QDs reveal sharp ($Γ<$ 150 $μ$eV) maxima and transfer of optical polarization to QD confining charged exciton state with efficiency attaining 26 %. The QD doping with single Mn$^{2+}$ ions is achieved.

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Tuning valley polarization in a WSe2 monolayer with a tiny magnetic field

In monolayers of semiconducting transition metal dichalcogenides, the light helicity ($σ^+$ or $σ^-$) is locked to the valley degree of freedom, leading to the possibility of optical initialization of distinct valley populations. However, an extremely rapid valley pseudospin relaxation (at the time scale of picoseconds) occurring for optically bright (electric-dipole active) excitons imposes some limitations on the development of opto-valleytronics. Here we show that inter-valley scattering of excitons can be significantly suppressed in a $\mathrm{WSe}_2$ monolayer, a direct-gap two-dimensional semiconductor with the exciton ground state being optically dark. We demonstrate that the already inefficient relaxation of the exciton pseudospin in such system can be suppressed even further by the application of a tiny magnetic field of $\sim$100 mT. Time-resolved spectroscopy reveals the pseudospin dynamics to be a two-step relaxation process. An initial decay of the pseudospin occurs at the level of dark excitons on a time scale of 100 ps, which is tunable with a magnetic field. This decay is followed by even longer decay ($>1$ ns), once the dark excitons form more complex objects allowing for their radiative recombination. Our finding of slow valley pseudospin relaxation easily manipulated by the magnetic field open new prospects for engineering the dynamics of the valley pseudospin in transition metal dichalcogenides.

cond-mat.mes-hall

Magnetic Ground State of an Individual Fe2+ Ion in Strained Semiconductor Nanostructure

We investigate spin properties of a Fe2+ dopant, known for having single nondegenerate ground state in bulk host semiconductor. Due to zero magnetic moment such a ground state is of little use for spintronics and solotronics. We show that this well-established picture of Fe2+ spin configuration can be contradicted by subjecting the Fe2+ ion to sufficiently high strain, e.g., resulting from lattice mismatched epitaxial heterostructures. Our analysis reveals that high strain induces qualitative change in the ion energy spectrum and results in doubly degenerate ground state with spin projection Sz=+/-2. An experimental proof of this concept is demonstrated using a new system: an epitaxial quantum dot containing individual Fe2+ ion. Magnetic character of the Fe2+ ground state in a CdSe/ZnSe dot is revealed in photoluminescence experiments by exploiting a coupling between a confined exciton and the single iron impurity.

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Efficient injection of spin-polarized excitons and optical spin orientation of a single Mn2+ ion in a CdSe/ZnSe quantum dot

Circularly polarized optical excitation is used to demonstrate the efficient injection of spin-polarized excitons to individual self-assembled CdSe quantum dots in ZnSe barrier. The exciton spin-transfer is studied by means of polarization-resolved single dot spectroscopy performed in magnetic field applied in Faraday configuration. Detailed analysis of the neutral exciton photoluminescence spectra reveals the presence of exciton spin relaxation during its lifetime in a quantum dot. This process is seen for both nonmagnetic dots and those containing single Mn$^{2+}$ ions. Taking this into account we determine the spin-polarization degree of excitons injected to a dot under circularly polarized below-the-barrier optical excitation at 488 nm. It is found to be close to 40% in the entire range of the applied magnetic field. Exploiting the established spin-conserving excitation channel we demonstrate the optical spin orientation of a single Mn$^{2+}$ ion embedded in a CdSe/ZnSe quantum dot.

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Coherent precession of an individual 5/2 spin

We present a direct observation of a coherent spin precession of an individual Mn$^{2+}$ ion, having both electronic and nuclear spins equal to 5/2, embedded in a CdTe quantum dot and placed in magnetic field. The spin state evolution is probed in a time-resolved pump-probe measurement of absorption of the single dot. The experiment reveals subtle details of the large-spin coherent dynamics, such as non-sinusoidal evolution of states occupation, and beatings caused by the strain-induced differences in energy levels separation. Sensitivity of the large-spin impurity on the crystal strain opens the possibility of using it as a local strain probe.

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Introducing single Mn2+ ions into spontaneously coupled quantum dot pairs

We present the photoluminescence excitation study of the self-assembled CdTe/ZnTe quantum dots doped with manganese ions. We demonstrate the identification method of spontaneously coupled quantum dots pairs containing single Mn2+ ions. As the result of the coupling, the resonant absorption of the photon in one quantum dot is followed by the exciton transfer into a neighboring dot. It is shown that the Mn2+ ion might be present in the absorbing, emitting or both quantum dots. The magnetic properties of the Mn2+ spin are revealed by a characteristic sixfold splitting of the excitonic line. The statistics of the value of this splitting is analyzed for the large number of the dots and gives the information on the maximum density of the neutral exciton wave function.

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Designing quantum dots for solotronics

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single cobalt ions and individual CdSe dots with single manganese ions show, however, that even if energetically allowed, the single ion related non-radiative recombination is negligible in such zero-dimensional structures. This opens solotronics for a wide range of even not yet considered systems. Basing on the results of our single spin relaxation experiments and on the material trends, we identify optimal magnetic ion-quantum dot systems for implementation of a single-ion based spin memory.

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