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T. Story

Publications and source records attributed to T. Story.

At least 19 recordsLinked to original sources

Tunable chiral anomaly in electron magnetotransport in the Weyl semimetallic Pb$_{1-x}$Sn$_x$Te:Cr alloy

We study magnetotransport properties of semiconductor substitutional alloy Pb$_{1-x}$Sn$_x$Te, known to exhibit Sn-content dependent properties of topological crystalline insulators with a semimetallic zero-gap state at a specific band inversion point. We experimentally verify the theoretically predicted role of chemical disorder in this multivalley electron system, which leads to sequential band inversions in various valleys and places the Fermi level close to the pairs of Weyl nodes, as identified in the density functional theory calculations. Doping with mixed-valence Cr resonant impurities enables exploitation of the unique properties of dopant resonant states, which provide an effective means of tuning carrier concentration. The combination of these two effects results in the pinning of the Fermi level in the vicinity of the nodal touching points across a wide range of composition. To address the above issues, we grow Bridgman bulk crystals of Pb$_{1-x}$Sn$_x$Te heavily doped with chromium and covering the full range of tin (0 $\leq x \leq$ 1), i.e. spanning both the topological crystalline insulator and trivial electronic regimes. We observe the emergence of the three dimensional (3D) Weyl semimetal phase over a range of Sn compositions, namely for $0.25 < x < 0.45$. We provide magnetotransport evidence for this and verify the relationship between the magnitude of the experimentally determined Berry curvature and the electrical properties of these materials. Quantum transport regime observed in magnetoresistance is also independently confirmed by thermal conductivity measurements.

cond-mat.mtrl-sci

Cr resonant impurity for studies of band inversion and band offsets in IV-VI semiconductors

Understanding the electronic structure of transition-metal dopants in IV-VI semiconductors is critical for tuning their band structure. We analyze properties of Cr dopant in $Pb_{1-x}Sn_xTe$ and PbSe by magnetic and transport measurements, which are interpreted based on density functional calculations. We demonstrate that the pinning of the Fermi energy to the chromium resonant level occurs for both n-type and p-type $Pb_{1-x}Sn_xTe$ in the whole composition range. This enables us to determine the valence band and conduction band offsets at the PbTe/SnTe/PbSe heterointerfaces, which is important for designing high-prformance 2D transistors. Furthermore, the magnetic measurements reveal the presence of Cr ions in three charge states, $Cr^{3+}$, $Cr^{2+}$, and $Cr^{1+}$. The last one corresponds to the Cr dopants incorporated at the interstitial, and not the substitutional, sites. The measured concentrations of the interstitial and substitutional Cr are comparable.

cond-mat.mtrl-sci

Bi, Cr and Ag dopants in PbTe and SnTe: impact of the host band symmetry on doping properties by ab initio calculations

Doping properties of Bi, Cr and Ag dopants in thermoelectric and topological materials PbTe and SnTe are analyzed based on density functional theory calculations in the local density approximations and the large supercell method. In agreement with experiment, in both PbTe and SnTe, Bi is a donor and Ag is an acceptor with a vanishing magnetic moment. In contrast, Cr is a resonant donor in PbTe, and an resonant acceptor in SnTe. We also consider the electronic structure of cation vacancies in PbTe and SnTe, since these abundant native defects induce $p$-type conductivity in both hosts. The quantitatively different impact of these dopants/defects on the host band structure of PbTe and SnTe (level energies, band splittings, band inversion, and a different level of hybridization between dopant and host states) is explained based on the group-theoretical arguments.

cond-mat.mtrl-sci

Reconstruction, rumpling, and Dirac states at the (001) surface of a topological crystalline insulator Pb1-xSnxSe

Equilibrium atomic configuration and electronic structure of the (001) surface of IV-VI semiconductors PbTe, PbSe, SnTe and SnSe, is studied using the density functional theory (DFT) methods. At surfaces of all those compounds, the displacements of ions from their perfect lattice sites reveal two features characteristic of the rock salt crystals. First, the ionic displacements occur only along the direction perpendicular to the surface, and they exhibit the rumpling effect, i.e., the vertical shifts of cations and anions differ. Second, the interlayer spacing of the first few monolayers at the surface oscillates. Our results are in good agreement with the previous X-ray experimental data and theoretical results where available. They also are consistent with the presence of two {110} mirror planes at the (001) surface of the rock salt. One the other hand, experiments preformed for the topological Pb$_{1-x}$Sn$_x$ Se alloy indicate breaking of the mirror symmetry due to a large 0.3 {\AA} relative displacement of the cation and anion sublattices at the surface, which induces the opening of the gap of the Dirac cones. Our results for Pb$_{1-x}$Sn$_x$Se including the simulated STM images, are in contradiction with these findings, since surface reconstructions with broken symmetry are never the ground state configurations. The impact of the theoretically determined surface configurations and of the chemical disorder on the surface states is analyzed.

cond-mat.mtrl-sci

Thermoelectric PbTe-CdTe bulk nanocomposite

The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators is presented. The method takes advantage of the extremely low mutual solubility of both semiconductors, resulting from their different crystal structure, and is based on a specifically designed Bridgman growth procedure. It is shown that the formation of zinc-blende crystalline CdTe grains in the rock-salt matrix of thermoelectric PbTe can be forced during the synthesis of a composite by introducing Cd in the form of CdTe compound and choosing the growth temperature above the melting point of PbTe but below the melting point of CdTe. X-ray diffraction and SEM-EDX spectroscopy analyzes as well as basic electric and thermoelectric characterization of the nanocomposite samples containing 2, 5 and 10 at. \% of Cd showed that using proposed growth procedure, it is possible to obtain both n-type (Bi- or I-doped) and p-type (Na-doped) material with carrier concentration of 1{\div}5 x 10\^{19} cm\^{-3} and uniformly distributed CdTe grains with a diameter of the order of 100 nm.

cond-mat.mtrl-sci

Band structure and topological phases of Pb$_{1-x-y}$Sn$_x$Mn$_y$Te by ab initio calculations

The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is in the Weyl semimetal phase. Incorporation of the magnetic Mn ions induces strong perturbations of the electronic structure, which act on both orbital and spin variables. Our first principles calculations show that the presence of Mn shifts the TCI and the Weyl region towards higher Sn contents in Pb$_{1-x}$Sn$_x$Te. When the Mn spin polarization is finite, the spin perturbation, like the orbital part, induces changes in band energies comparable to the band gap, which widens the Weyl area. The effect opens a possibility of driving transitions between various topological phases of the system by magnetic field or by the spontaneous Mn magnetization. We also propose a new method to calculate topological indices for systems with a finite spin polarization defined based on the concept of the Chern number. These valid topological characteristics enable an identification of the three distinct topological phases of the Pb$_{1-x-y}$Sn$_x$Mn$_y$Te alloy.

cond-mat.mtrl-sci

Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content

High quality p-type PbTe-CdTe monocrystalline alloys containing up to 10 at.$\%$ of Cd are obtained by self-selecting vapor transport method. Mid infrared photoluminescence experiments are performed to follow the variation of the fundamental energy gap as a function of Cd content. The Hall mobility, thermoelectric power, thermal conductivity and thermoelectric figure of merit parameter $ZT$ are investigated experimentally and theoretically paying particular attention to the two-valence band structure of the material. It is shown that the heavy-hole band near the $Σ$ point of the Brillouin zone plays an important role and is responsible for the Pb$_{1-x}$Cd$_x$Te hole transport at higher Cd-content. Our data and their description can serve as the standard for Pb$_{1-x}$Cd$_x$Te single crystals with $x$ up to 0.1. It is shown, that monocrystalline Pb$_{1-x}$Cd$_x$Te samples with relatively low Cd content of about 1 at.\% and hole concentration of the order of 10$^{20}$ cm$^{-3}$ may exhibit $ZT \approx$ 1.4 at 600 K.

cond-mat.mtrl-sci

Experimental search for the origin of low-energy modes in topological materials

Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles, and show to what extent our data are consistent with Brzezicki's et al. theory [arXiv:1812.02168], assigning the observations to a collective state adjacent to atomic steps at topological surfaces.

cond-mat.supr-con

Probing spatial extent of topological surface states by weak antilocalization experiments

Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface states. We study thin films of prototypical topological crystalline insulator SnTe. To access microscopic characteristic of these states we employ a model developed by Tkachov and Hankiewicz, [Physical Review B 84, 035444]. Using this model the spatial decay of the topological states is obtained from measurements of quantum corrections to the conductivity in perpendicular and parallel configurations of the magnetic field. Within this model we find interaction between two topological boundaries which results in scaling of the spatial decay with the film thickness. We attribute this behavior to bulk reservoir which mediates interactions by scattering events without phase breaking of topological carriers.

cond-mat.mes-hall

Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Walls epitaxy mode induced when the catalyzing Au nanoparticle mixes with Sn delivered from SnTe flux, providing liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out on necessity of depositing protective capping in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.

cond-mat.mtrl-sci

Alloy broadening of the transition to the non-trivial topological phase of Pb_{1-x}Sn_{x}Te

Transition between the topologically trivial and non-trivial phase of Pb_{1-x}Sn_{x}Te alloy is driven by the increasing content $x$ of Sn, or by the hydrostatic pressure for $x<0.3$. We show that a sharp border between these two topologies exists in the Virtual Crystal Approximation only. In more realistic models, the Special Quasirandom Structure method and the supercell method (with averaging over various atomic configurations), the transitions are broadened. We find a surprisingly large interval of alloy composition, $0.3<x<0.6$, in which the energy gap is practically vanishing. A similar strong broadening is also obtained for transitions driven by hydrostatic pressure. Analysis of the band structure shows that the alloy broadening originates in splittings of the energy bands caused by the different chemical nature of Pb and Sn, and by the decreased crystal symmetry due to spatial disorder. Based on our results of ab initio and tight binding calculations for Pb_{1-x}Sn_{x}Te we discuss different criteria of discrimination between trivial and nontrivial topology of the band structure of alloys.

cond-mat.mtrl-sci

Experimental evidence for topological surface states wrapping around bulk SnTe crystal

We demonstrate that the metallic topological surface states wrap on all sides the 3D topological crystalline insulator SnTe. This is achieved by studying oscillatory quantum magneto-transport and magnetization at tilted magnetic fields which enables us to observe simultaneous contributions from neighbouring sample sides. Taking into account pinning of the Fermi energy by the SnTe reservoir we successfully describe theoretically the de Haas-van Alphen oscillations of magnetization. The determined π-Berry phase of surface states confirms their Dirac fermion character. We independently observe oscillatory contributions of magneto-transport and magnetization originating from the bulk SnTe reservoir of high hole density. It is concluded that the bulk and surface Landau states exist in parallel. Our main result that the bulk reservoir is surrounded on all sides by the topological surface states has an universal character.

cond-mat.mtrl-sci

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1-xSnxSe

The transverse Nernst Ettingshausen (N-E) effect and electron mobility in Pb$_{1-x}$Sn$_x$Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap $E_g$. The study is motivated by the recent discovery that, by lowering the temperature, one can change the band ordering from trivial to nontrivial one in which the topological crystalline insulator states appear at the surface. Our work presents several new aspects. It is shown experimentally and theoretically that the bulk N-E effect has a maximum when the energy gap $E_g$ of the mixed crystal goes through zero value. This result contradicts the claim made in the literature that the N-E effect changes sign when the gap vanishes. We successfully describe $dc$ transport effects in the situation of extreme band's nonparabolicity which, to the best of our knowledge, has never been tried before. A situation is reached in which both two-dimensional bands (topological surface states) and three-dimensional bands are linear in electron \textbf{k} vector. Various scattering modes and their contribution to transport phenomena in Pb$_{1-x}$Sn$_x$Se are analyzed. As the energy gap goes through zero, some transport integrals have a singular (nonphysical) behaviour and we demonstrate how to deal with this problem by introducing damping.

cond-mat.mtrl-sci

Magnetic anisotropy induced by crystal distortion in Ge1-xMn xTe/PbTe//KCl (001) ferromagnetic semiconductor layers

Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

cond-mat.mtrl-sci

Magnetic anisotropy energy in disordered Ge_{1-x}Mn_{x}Te

We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge_{1-x}Mn_{x}Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion of rhombohedral crystal lattice. Using DFT method we determine the local changes in the crystal structure due to Mn ions substitution for Ge and due to the presence in Ge_{1-x}Mn_{x}Te of very high concentration of cation vacancies. We calculate the effect of this structural and chemical disorder on single ion magnetic anisotropy mechanism and show that its contribution is order of magnitude smaller as compared to magnetic anisotropy mechanism originating from the spin polarization induced by Mn ions into neighboring Te and Ge ions. We also discuss magnetic anisotropy effects due to pairs of Mn ions differently allocated in the lattice. The spatial averaging over chemical disorder strongly reduces the strength of this magnetic anisotropy mechanism and restores the global rhombohedral symmetry of magnetic system.

cond-mat.mtrl-sci

DFT calculations of magnetic anisotropy energy for GeMnTe ferromagnetic semiconductor

Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral GeMnTe (111) thin layers.

cond-mat.mtrl-sci

Direct observation and temperature control of the surface Dirac gap in the topological crystalline insulator (Pb,Sn)Se

Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators (TCIs) where the topological states are protected by real space crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here, we show for the first time a temperature-driven gap opening in Dirac surface states within the TCI phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between a massless and massive topological state on the surface of a topological system.

cond-mat.mtrl-sci

On the nature of the band inversion and the topological phase transition in (Pb,Sn)Se

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the surface-state observations, we monitor directly the topological phase transition in this solid solution and gain valuable information on the evolution of the underlying fundamental band gap of the system. In contrast to common model expectations, the band-gap evolution appears to be nonlinear as a function of the studied parameters, resulting in the measuring of a discontinuous band inversion process. This finding signifies that the anticipated gapless bulk state is in fact not a stable configuration and that the topological phase transition therefore exhibits features akin to a first-order transition.

cond-mat.mtrl-sci