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T. Taniguchi

Publications and source records attributed to T. Taniguchi.

At least 181 records · Page 10Linked to original sources

One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material's electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a Type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 Kelvin, which has ramifications for future fabrication recipes.

cond-mat.mes-hall↗

Two-dimensional superconducting fluctuations associated with charge density wave stripes in La$_{1.87}$Sr$_{0.13}$Cu$_{0.99}$Fe$_{0.01}$O$_4$

The presence of a small concentration of in-plane Fe dopants in La$_{1.87}$Sr$_{0.13}$Cu$_{0.99}$Fe$_{0.01}$O$_4$ is known to enhance stripe-like spin and charge density wave (SDW and CDW) order, and suppress the superconducting $T_c$. Here, we show that it also induces highly two-dimensional (2D) superconducting correlations that have been argued to be signatures of a new form of superconducting order, so-called pair-density-wave (PDW) order. In addition, using the resonant soft x-ray scattering, we find that the 2D superconducting fluctuation is strongly associated with the CDW stripe. In particular, the PDW signature first appears when the correlation length of the CDW stripe grows over eight times the lattice unit ($\sim$ 8$a$). These results provide critical conditions for the formation of PDW order.

cond-mat.supr-con↗

Spin-orbit-enhanced robustness of supercurrent in graphene/WS$_2$ Josephson junctions

We demonstrate enhanced robustness of the supercurrent through graphene-based Josephson junctions in which strong spin-orbit interactions (SOIs) are induced. We compare the persistence of a supercurrent at high magnetic fields between Josephson junctions with graphene on hexagonal boron-nitride and graphene on WS$_2$, where strong SOIs are induced via the proximity effect. We find that in the shortest junctions both systems display signatures of induced superconductivity, characterized by a suppressed differential resistance at a low current, in magnetic fields up to 1 T. In longer junctions however, only graphene on WS$_2$ exhibits induced superconductivity features in such high magnetic fields, and they even persist up to 7 T. We argue that these robust superconducting signatures arise from quasi-ballistic edge states stabilized by the strong SOIs induced in graphene by WS$_2$.

cond-mat.mes-hall↗

Overdamped Phase Diffusion in hBN Encapsulated Graphene Josephson Junctions

We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7K, the junctions appear non-hysteretic with respect to the switching and retrapping currents $I_C$ and $I_R$. A small non-zero resistance is observed even around zero bias current, and scales with temperature as dictated by the phase diffusion mechanism. By varying the graphene carrier concentration we are able to confirm that the observed phase diffusion mechanism follows the trend for an overdamped Josephson junction. This is in contrast with the majority of graphene-based junctions which are underdamped and shorted by the environment at high frequencies.

cond-mat.mes-hall↗

Excitonic complexes in $n$-doped WS$_2$ monolayer

We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutral A exciton line, all observed emission lines are related to the negatively charged excitons. Consequently, we identify emissions due to both the bright (singlet and triplet) and dark (spin- and momentum-forbidden) negative trions as well as the phonon replicas of the latter optically-inactive complexes. The semi-dark trions and negative biexcitons are distinguished. Based on their experimentally extracted and theoretically calculated $g$-factors, we identify three distinct families of emissions due to exciton complexes in WS$_2$: bright, intravalley and intervalley dark. The $g$-factors of the spin-split subbands in both the conduction and valence bands are also determined.

cond-mat.mes-hall↗

Chern Insulators and Topological Flat-bands in Magic-angle Twisted Bilayer Graphene

Magic-angle twisted bilayer graphene (MA-TBG) exhibits intriguing quantum phase transitions triggered by enhanced electron-electron interactions when its flat-bands are partially filled. However, the phases themselves and their connection to the putative non-trivial topology of the flat bands are largely unexplored. Here we report transport measurements revealing a succession of doping-induced Lifshitz transitions that are accompanied by van Hove singularities (VHS) which facilitate the emergence of correlation-induced gaps and topologically non-trivial sub-bands. In the presence of a magnetic field, well quantized Hall plateaus at filling of 1, 2, 3 carriers per moiré-cell reveal the sub-band topology and signal the emergence of Chern insulators with Chern-numbers, ! = !, !, !, respectively. Surprisingly, for magnetic fields exceeding 5T we observe a VHS at a filling of 3.5, suggesting the possibility of a fractional Chern insulator. This VHS is accompanied by a crossover from low-temperature metallic, to high-temperature insulating behavior, characteristic of entropically driven Pomeranchuk-like transitions,

cond-mat.mes-hall↗

Tunable broadband light emission from graphene

Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwidth, as well as the electronic temperature of graphene. Here, we demonstrate that the emission wavelength of graphene$'$ s broadband hot carrier photoluminescence can be tuned by integration on photonic cavities, while thermal management can be achieved by out-of-plane heat transfer to hexagonal boron nitride. Our results pave the way to graphene-based ultrafast broadband light emitters with tunable emission.

physics.optics↗

Deterministic transfer of optical-quality carbon nanotubes for atomically defined technology

When continued device scaling reaches the ultimate limit imposed by atoms, technology based on atomically precise structures is expected to emerge. Device fabrication will then require building blocks with identified atomic arrangements and assembly of the components without contamination. Here we report on a versatile dry transfer technique for deterministic placement of optical-quality carbon nanotubes. Single-crystalline anthracene is used as a medium which readily sublimes by mild heating, leaving behind clean nanotubes and thus enabling bright photoluminescence. We are able to position nanotubes of a desired chirality with a sub-micron accuracy under in-situ optical monitoring, thereby demonstrating deterministic coupling of a nanotube to a photonic crystal nanobeam cavity. A cross junction structure is also designed and constructed by repeating the nanotube transfer, where intertube exciton transfer is observed. Our results represent an important step towards development of devices consisting of atomically precise components and interfaces.

cond-mat.mes-hall↗

Equilibration and Filtering of Quantum Hall Edge States in Few-Layer Black Phosphorus

We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both full equilibration, where all edge channels equilibrate and are equally partitioned at the interfaces, and partial equilibration, where only equilibration only takes place among modes of the same spin polarization. Furthermore, the inner p'-region with low-doping level in the junction can function as a filter for highly doped p-regions which demonstrates gate-tunable transmission of edge channels.

cond-mat.mes-hall↗

Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter αis thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, αcould be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

cond-mat.mes-hall↗

Ultralow temperature NMR of CeCoIn$_5$

We have performed $^{59}$Co NMR measurements of CeCoIn$_5$ down to ultralow temperatures. We find that the temperature dependence of the spin-echo intensity provides a good measure of the sample temperature, enabling us to determine a pulse condition not heating up the sample by the NMR pulses down to ultralow temperatures. From the longitudinal relaxation time ($T_1$) measurements at 5 T applied along the $c$ axis, a pronounced peak in $1/T_1T$ is observed at 20 mK, implying an appearance of magnetic order as suggested by the recent quantum oscillation measurements [H. Shishido {\it et al.}, Phys. Rev. Lett. {\bf 120}, 177201 (2018)]. On the other hand, the NMR spectrum shows no change below 20 mK. Moreover, the peak in $1/T_1 T$ disappears at 6 and 8 T in contrast to the results of the quantum oscillation. We discuss that an antiferromagnetic state with a moment lying in the $a$--$b$ plane can be a possible origin for the peak in $1/T_1 T$ at 5 T.

cond-mat.str-el↗

Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe$_2$ / CrBr$_3$ van der Waals heterostructures

Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moiré periodicity, or exceptionally strong Coulomb binding. Here, we report a charge-state dependency of the magnetic proximity effects between MoSe$_2$ and CrBr$_3$ in photoluminescence, whereby the valley polarization of the MoSe$_2$ trion state conforms closely to the local CrBr$_3$ magnetization, while the neutral exciton state remains insensitive to the ferromagnet. We attribute this to spin-dependent interlayer charge transfer occurring on timescales between the exciton and trion radiative lifetimes. Going further, we uncover by both the magneto-optical Kerr effect and photoluminescence a domain-like spatial topography of contrasting valley polarization, which we infer to be labyrinthine or otherwise highly intricate, with features smaller than 400 nm corresponding to our optical resolution. Our findings offer a unique insight into the interplay between short-lived valley excitons and spin-dependent interlayer tunnelling, while also highlighting MoSe$_2$ as a promising candidate to optically interface with exotic spin textures in van der Waals structures.

cond-mat.mes-hall↗

Long-range ballistic transport of Brown-Zak fermions in graphene superlattices

In quantizing magnetic fields, graphene superlattices exhibit a complex fractal spectrum often referred to as the Hofstadter butterfly. It can be viewed as a collection of Landau levels that arise from quantization of Brown-Zak minibands recurring at rational ($p/q$) fractions of the magnetic flux quantum per superlattice unit cell. Here we show that, in graphene-on-boron-nitride superlattices, Brown-Zak fermions can exhibit mobilities above 10$^6$ cm$^2$V$^{-1}$s$^{-1}$ and the mean free path exceeding several micrometers. The exceptional quality of our devices allows us to show that Brown-Zak minibands are $4q$ times degenerate and all the degeneracies (spin, valley and mini-valley) can be lifted by exchange interactions below 1K. We also found negative bend resistance at $1/q$ fractions for electrical probes placed as far as several micrometers apart. The latter observation highlights the fact that Brown-Zak fermions are Bloch quasiparticles propagating in high fields along straight trajectories, just like electrons in zero field.

cond-mat.mes-hall↗

Observation of Wigner crystal of electrons in a monolayer semiconductor

When the Coulomb repulsion between electrons dominates over their kinetic energy, electrons in two dimensional systems were predicted to spontaneously break continuous translation symmetry and form a quantum crystal. Efforts to observe this elusive state of matter, termed a Wigner crystal (WC), in two dimensional extended systems have primarily focused on electrons confined to a single Landau level at high magnetic fields, but have not provided a conclusive experimental signature of the emerging charge order. Here, we use optical spectroscopy to demonstrate that electrons in a pristine monolayer semiconductor with density $ \lesssim 3 \cdot 10^{11}$ cm$^{-2}$ form a WC. The interactions between resonantly injected excitons and electrons arranged in a periodic lattice modify the exciton band structure so that it exhibits a new umklapp resonance, heralding the presence of charge order. Remarkably, the combination of a relatively high electron mass and reduced dielectric screening allows us to observe an electronic WC state even in the absence of magnetic field. The tentative phase diagram obtained from our Hartree-Fock calculations provides an explanation of the striking experimental signatures obtained up to $B = 16$ T. Our findings demonstrate that charge-tunable transition metal dichalcogenide (TMD) monolayers enable the investigation of previously uncharted territory for many-body physics where interaction energy dominates over kinetic energy, even in the absence of a moire potential or external fields.

cond-mat.mes-hall↗

Nonlinear twistoptics at symmetry-broken interfaces

Broken symmetries induce strong nonlinear optical responses in materials and at interfaces. Twist angle can give complete control over the presence or lack of inversion symmetry at a crystal interface, and is thus an appealing knob for tuning nonlinear optical systems. In contrast to conventional nonlinear crystals with rigid lattices, the weak interlayer coupling in van der Waals (vdW) heterostructures allows for arbitrary selection of twist angle, making nanomechanical manipulation of fundamental interfacial symmetry possible within a single device. Here we report highly tunable second harmonic generation (SHG) from nanomechanically rotatable stacks of bulk hexagonal boron nitride (BN) crystals, and introduce the term twistoptics to describe studies of optical properties in dynamically twistable vdW systems. We observe SHG intensity modulated by a factor of more than 50, polarization patterns determined by moiré interface symmetry, and enhanced conversion efficiency for bulk crystals by stacking multiple pieces of BN joined by symmetry-broken interfaces. Our study provides a foundation for compact twistoptics architectures aimed at efficient, scalable, and tunable frequency-conversion, and demonstrates SHG as a robust probe of buried vdW interfaces.

cond-mat.mes-hall↗

Demonstration of a polariton step potential by local variation of light-matter coupling in a van-der-Waals heterostructure

The large oscillator strength of excitons in transition metal dichalcogenide layers facilitates the formation of exciton-polariton resonances for monolayers and van-der-Waals heterostructures embedded in optical microcavities. Here, we show, that locally changing the number of layers in a WSe2/hBN/WSe2 van-der-Waals heterostructure embedded in a monolithic, high-quality-factor cavity gives rise to a local variation of the coupling strength. This effect yields a polaritonic stair case potential, which we demonstrate at room temperature. Our result paves the way towards engineering local polaritonic potentials at length scales down to atomically sharp interfaces, based on purely modifying its real part contribution via the coherent light-matter coupling strength g.

cond-mat.mes-hall↗

Integration of multi-layer black phosphorus into photoconductive antennas for THz emission

We report the fabrication, characterization, and modeling of photoconductive antennas using 40 nm thin-film flakes of black phosphorus (BP) as the photoconductor and hexagonal boron nitride (hBN) as a capping layer to prevent oxidation of BP. Dipole antennas were fabricated on oxidized high-resistivity Si substrates, and BP and hBN flakes were picked up and transferred onto the antenna inside a nitrogen glovebox. The transfer matrix technique was used to optimize the thickness of BP and hBN for maximum absorption. BP flakes were aligned with the armchair axis along the anode-cathode gap of the antenna, with crystal orientation measured using reflection anisotropy. Photocurrent imaging under illumination with 100 fs pulses at 780 and 1560 nm showed a bias-dependent maximum photocurrent localized to the antenna gap with a peak photoconductivity of 1 (2) S/cm in the linear regime of bias for excitation at 780 (1560) nm. Photocurrent saturation in bias (pump fluence) occurred at approximately 1 V (0.25 mJ/cm$^2$). Device performance was modeled numerically by solving Maxwell's equations and the drift-diffusion equation to obtain the photocurrent density in response to pulsed laser excitation, which was largely in qualitative agreement with the experimental observations. THz output computed from surface current density suggests that BP THz PCA performance is at least comparable to more traditional devices based on low-temperature-grown GaAs. These devices represent a step toward high-performance THz photoconductive antennas using BP.

physics.app-ph↗

Tuning electron correlation in magic-angle twisted bilayer graphene using Coulomb screening

The ability to control the strength of interaction is essential for studying quantum phenomena emerging from a system of correlated fermions. For example, the isotope effect illustrates the effect of electron-phonon coupling on superconductivity, providing an important experimental support for the BCS theory. In this work, we report a new device geometry where the magic-angle twisted bilayer graphene (tBLG) is placed in close proximity to a Bernal bilayer graphene (BLG) separated by a 3 nm thick barrier. Using charge screening from the Bernal bilayer, the strength of electron-electron Coulomb interaction within the twisted bilayer can be continuously tuned. Transport measurements show that tuning Coulomb screening has opposite effect on the insulating and superconducting states: as Coulomb interaction is weakened by screening, the insulating states become less robust, whereas the stability of superconductivity is enhanced. Out results demonstrate the ability to directly probe the role of Coulomb interaction in magic-angle twisted bilayer graphene. Most importantly, the effect of Coulomb screening points toward electron-phonon coupling as the dominant mechanism for Cooper pair formation, and therefore superconductivity, in magic-angle twisted bilayer graphene.

cond-mat.mes-hall↗