arXiv subjects

T. Taniguchi

Publications and source records attributed to T. Taniguchi.

At least 325 records · Page 18Linked to original sources

arXiv2016

Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene

Twisted bilayer graphene (TwBLG) is one of the simplest van der Waals heterostructures, yet it yields a complex electronic system with intricate interplay between moiré physics and interlayer hybridization effects. We report on electronic transport measurements of high mobility small angle TwBLG devices showing clear evidence for insulating states at the superlattice band edges, with thermal activation gaps several times larger than theoretically predicted. Moreover, Shubnikov-de Haas oscillations and tight binding calculations reveal that the band structure consists of two intersecting Fermi contours whose crossing points are effectively unhybridized. We attribute this to exponentially suppressed interlayer hopping amplitudes for momentum transfers larger than the moiré wavevector.

cond-mat.mes-hall↗

arXiv2016

Quadrupole Order in the Frustrated Pyrochlore Tb$_{2+x}$Ti$_{2-x}$O$_{7+y}$

A hidden order that emerges in the frustrated pyrochlore Tb$_{2+x}$Ti$_{2-x}$O$_{7+y}$ with $T_{\text{c}}=0.53$ K is studied using specific heat, magnetization, and neutron scattering experiments on a high-quality single crystal. Semi-quantitative analyses based on a pseudospin-1/2 Hamiltonian for ionic non-Kramers magnetic doublets demonstrate that it is an ordered state of electric quadrupole moments. The elusive spin liquid state of the nominal Tb$_2$Ti$_2$O$_7$ is most likely a U(1) quantum spin-liquid state.

cond-mat.str-el↗

arXiv2016

Size quantization of Dirac fermions in graphene constrictions

Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantized conductance of size-confined Dirac fermions in lithographically-defined graphene constrictions. At high charge carrier densities, the observed conductance agrees excellently with the Landauer theory of ballistic transport without any adjustable parameter. Experimental data and simulations for the evolution of the conductance with magnetic field unambiguously confirm the identification of size quantization in the constriction. Close to the charge neutrality point, bias voltage spectroscopy reveals a renormalized Fermi velocity ($v_F \approx 1.5 \times 10^6 m/s$) in our graphene constrictions. Moreover, at low carrier density transport measurements allow probing the density of localized states at edges, thus offering a unique handle on edge physics in graphene devices.

cond-mat.mes-hall↗

arXiv2016

Macroscopic self-reorientation of interacting two-dimensional crystals

Microelectromechanical systems, which can be moved or rotated with nanometre precision, already find applications in such fields like radio-frequency electronics, micro-attenuators, sensors and many others. Especially interesting are those which allow fine control over the motion on atomic scale due to self-alignment mechanisms and forces acting on the atomic level. Such machines can produce well-controlled movements as a reaction to small changes of the external parameters. Here we demonstrate that, for the system of graphene on hexagonal boron nitride, the interplay between the van der Waals and elastic energies results in graphene mechanically self-rotating towards the hexagonal boron nitride crystallographic directions. Such rotation is macroscopic (for graphene flakes of tens of micrometres the tangential movement can be on hundreds of nanometres) and can be used for reproducible manufacturing of aligned van der Waals heterostructures.

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arXiv2016

Thermo Activated Hysteresis on High Quality Graphene/h-BN Devices

We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate the origin of the hysteretic phenomenon, we design heterostructures involving graphene/h-BN devices with different underlying substrates such as: SiO2/Si and graphite; where heavily doped silicon and graphite are used as a back gate electrodes, respectively. The gate hysteretic behavior of the resistance shows to be present only in devices with an h-BN/SiO2 interface and is dependent on the orientation of the applied gate electric field and sweep rate. Finally, we suggest a phenomenological model, which captures all of our findings based on charges trapped at the h-BN/SiO2. Certainly, such hysteretic behavior in graphene resistance represents a technological problem for the application of graphene devices at high temperatures, but conversely, it can open new routes for applications on digital electronics and graphene memory devices.

cond-mat.mes-hall↗

arXiv2016

Robust fractional quantum Hall effect and composite fermions in the $N=2$ Landau level in bilayer graphene

The fractional quantum Hall (FQH) effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most FQH studies have focused on the lowest Landau level (LL), whose fractional states are successfully explained by the composite fermion (CF) model, in which an even number of magnetic flux quanta are attached to an electron and where states form the sequence of filling factors $ν= p/(2mp \pm 1)$, with $m$ and $p$ positive integers. In the widely-studied GaAs-based system, the CF picture is thought to become unstable for the $N \geq 2$ LL, where larger residual interactions between CFs are predicted and competing many-body phases have been observed. Here we report transport measurements of FQH states in the $N=2$ LL (filling factors $4 < ν< 8$) in bilayer graphene, a system with spin and valley degrees of freedom in all LLs, and an additional orbital degeneracy in the 8-fold degenerate $N=0$/$N=1$ LLs. In contrast with recent observations of particle-hole asymmetry in the $N=0$/$N=1$ LLs of bilayer graphene, the FQH states we observe in the $N=2$ LL are consistent with the CF model: within a LL, they form a complete sequence of particle-hole symmetric states whose relative strength is dependent on their denominators. The FQH states in the $N=2$ LL display energy gaps of a few Kelvin, comparable to and in some cases larger than those of fractional states in the $N=0$/$N=1$ LLs. The FQH states we observe form, to the best of our knowledge, the highest set of particle-hole symmetric pairs seen in any material system.

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arXiv2016

Observation of Helical Edge States and Fractional Quantum Hall Effect in a Graphene Electron-hole Bilayer

A quantum Hall edge state provides a rich foundation to study electrons in 1-dimension (1d) but is limited to chiral propagation along a single direction. Here, we demonstrate a versatile platform to realize new 1d systems made by combining quantum Hall edge states of opposite chiralities in a graphene electron-hole bilayer. Using this approach, we engineer helical 1d edge conductors where the counterpropagating modes are localized in separate electron and hole layers by a tunable electric field. These helical conductors exhibit strong nonlocal transport signals and suppressed backscattering due to the opposite spin polarizations of the counterpropagating modes. Moreover, we investigate these electron-hole bilayers in the fractional quantum Hall regime, where we observe conduction through fractional and integer edge states of opposite chiralities, paving the way towards the realization of 1d helical systems with fractional quantum statistics.

cond-mat.mes-hall↗

arXiv2016

Quadrupole order in the frustrated pyrochlore magnet Tb$_2$Ti$_2$O$_7$

We have studied the hidden long-range order (LRO) of the frustrated pyrochlore magnet Tb$_2$Ti$_2$O$_7$ by means of specific-heat experiments and Monte-Carlo (MC) simulations, which has been discussed as the LRO of quadrupole moments inherent to the non-Kramers ion of Tb$^{3+}$. We have found that the sharp specific-heat peak is collapsed into a broad hump by magnetic fields above 0.3 T for $H//[001]$. This result, qualitatively reproduced by MC simulations, suggests that a field-induced magnetic state overcomes the quadrupolar LRO state, as a similar case of a classical spin ice. The present results support the interpretation that Tb$_{2+x}$Ti$_{2-x}$O$_{7+y}$ is a unique material in the boundary between the quadrupolar ($x \geq x_c = -0.0025$) and spin-liquid ($x \leq x_c$) states, where the magnetic field along the [001] axis is a tuning parameter which induces the magnetic ordered state.

cond-mat.str-el↗

arXiv2016

Negative Coulomb Drag in Double Bilayer Graphene

Coulomb drag between parallel quantum wells provides a uniquely sensitive measurement of electron correlations since the drag response depends on interactions only. Recently it has been demonstrated that a new regime of strong interactions can be accessed for devices consisting of two monlolayer graphene (MLG) crystals, separated by few layer hexagonal boron-nitride. Here we report measurement of Coulomb drag in a double bilayer graphene (BLG) stucture, where the interaction potential is anticipated to be yet further enhanced compared to MLG. At low temperatures and intermediate densities a new drag response with inverse sign is observed, distinct from the momentum and energy drag mechanisms previously reported in double MLG. We demonstrate that by varying the device aspect ratio the negative drag component can be suppressed and a response showing excellent agreement with the density and temperature dependance predicted for momentum drag in double BLG is found. Our results pave the way for pursuit of emergent phases in strongly interacting bilayers, such as the exciton condensate.

cond-mat.mes-hall↗

arXiv2016

Quantum spin liquid and electric quadrupolar states of single crystal Tb$_{2+x}$Ti$_{2-x}$O$_{7+y}$

The ground states of the frustrated pyrochlore oxide Tb$_{2+x}$Ti$_{2-x}$O$_{7+y}$, sensitively depending on the small off-stoichiometry parameter $x$, have been studied by specific heat measurements using well characterized samples. Single crystal Tb$_{2+x}$Ti$_{2-x}$O$_{7+y}$ boules grown by the standard floating zone technique are shown to exhibit concentration ($x$) gradient. This off-stoichiometry parameter is determined by precisely measuring the lattice constant of small samples cut from a crystal boule. Specific heat shows that the phase boundary of the electric quadrupolar state has a dome structure in the $x$-$T$ phase diagram with the highest $T_{\text{c}} \simeq 0.5$ K at about $x = 0.01$. This phase diagram suggests that the putative U(1) quantum spin-liquid state of Tb$_{2+x}$Ti$_{2-x}$O$_{7+y}$ exists in the range $x<x_{\text{c}} \simeq -0.0025 $, which is separated from the quadrupolar state via a first-order phase-transition line $x=x_{\text{c}}$.

cond-mat.str-el↗

arXiv2016

Imaging Cyclotron Orbits of Electrons in Graphene

Electrons in graphene can travel for several microns without scattering at low temperatures, and their motion becomes ballistic, following classical trajectories. When a magnetic field B is applied perpendicular to the plane, electrons follow cyclotron orbits. Magnetic focusing occurs when electrons injected from one narrow contact focus onto a second contact located an integer number of cyclotron diameters away. By tuning the magnetic field B and electron density n in the graphene layer, we observe magnetic focusing peaks. We use a cooled scanning gate microscope to image cyclotron trajectories in graphene at 4.2 K. The tip creates a local change in density that casts a shadow by deflecting electrons flowing nearby; an image of flow can be obtained by measuring the transmission between contacts as the tip is raster scanned across the sample. On the first magnetic focusing peak, we image a cyclotron orbit that extends from one point contact to the other. In addition, we study the geometry of orbits deflected into the second point contact by the tip.

cond-mat.mes-hall↗

arXiv2015

High responsivity phototransistors based on few-layer ReS2 for weak signal detection

Two-dimensional transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light-matter interactions. To fully explore their potential in photoconductive detectors, high responsivity and weak signal detection are required. Here, we present high responsivity phototransistors based on few-layer rhenium disulfide (ReS2). Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is a record value compared to other two-dimensional materials with similar device structures and two orders of magnitude higher than that of monolayer MoS2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS2 as a promising material for future sensitive optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene

Graphene-based Josephson junctions provide a novel platform for studying the proximity effect due to graphene's unique electronic spectrum and the possibility to tune junction properties by gate voltage. Here we describe graphene junctions with a mean free path of several micrometres, low contact resistance and large supercurrents. Such devices exhibit pronounced Fabry-Pérot oscillations not only in the normal-state resistance but also in the critical current. The proximity effect is mostly suppressed in magnetic fields below 10mT, showing the conventional Fraunhofer pattern. Unexpectedly, some proximity survives even in fields higher than 1 T. Superconducting states randomly appear and disappear as a function of field and carrier concentration, and each of them exhibits a supercurrent carrying capacity close to the universal quantum limit. We attribute the high-field Josephson effect to mesoscopic Andreev states that persist near graphene edges. Our work reveals new proximity regimes that can be controlled by quantum confinement and cyclotron motion.

cond-mat.mes-hall↗

arXiv2015

Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system

The key to achieve high-quality van der Waals heterostructure devices made of stacking various two-dimensional (2D) layered materials lies in the clean interface without bubbles and wrinkles. Although polymethylmethacrylate (PMMA) is generally used as a sacrificial transfer film due to its strong adhesion property, it is always dissolved in the solvent after the transfer, resulting in the unavoidable PMMA residue on the top surface. This makes it difficult to locate clean interface areas. In this work, we present a fully dry PMMA transfer of graphene onto h-BN using a heating/cooling system which allows identification of clean interface area for high quality graphene/h-BN heterostructure fabrication. The mechanism lies in the utilization of the large difference in thermal expansion coefficients between polymers (PMMA/PDMS) and inorganic materials (graphene/h-BN substrate) to mechanically peel off PMMA from graphene by the thermal shrinkage of polymers, leaving no PMMA residue on the graphene surface. This method can be applied to all types of 2D layered materials.

cond-mat.mtrl-sci↗

arXiv2015

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.

cond-mat.mes-hall↗

arXiv2015

Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride

Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we report a systematic investigation of the dielectric breakdown characteristics of BN using conductive atomic force microscopy. The electric field strength was found to be ~12 MV/cm, which is comparable to that of conventional SiO2 oxides because of the covalent bonding nature of BN. After the hard dielectric breakdown, the BN fractured like a flower into equilateral triangle fragments. However, when the applied voltage was terminated precisely in the middle of the dielectric breakdown, the formation of a hole that did not penetrate to the bottom metal electrode was clearly observed. Subsequent I-V measurements of the hole indicated that the BN layer remaining in the hole was still electrically inactive. Based on these observations, layer-by-layer breakdown was confirmed for BN with regard to both physical fracture and electrical breakdown. Moreover, statistical analysis of the breakdown voltages using a Weibull plot suggested the anisotropic formation of defects. These results are unique to layered materials and unlike the behavior observed for conventional 3D amorphous oxides.

cond-mat.mtrl-sci↗

arXiv2015

Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs

The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN. We investigated the deposition of Y2O3 on h-BN using atomic layer deposition. The deposition of Y2O3 on h-BN was confirmed without any buffer layer. An increase in the deposition temperature reduced the surface coverage. The deposition mechanism could be explained by the competition between the desorption and adsorption of the Y precursor on h-BN due to the polarization. Although a full surface coverage was difficult to achieve, the use of an oxidized metal seeding layer on h-BN resulted in a full surface coverage.

cond-mat.mtrl-sci↗

arXiv2015

Photoluminescence from voids created by femtosecond laser pulses inside cubic-BN

Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of $\sim 4$~ns. Sharp emission lines are consistent with PL of intrinsic vibronic defects linked to the nitrogen vacancy formation (via Frenkel pair) observed earlier in high energy electron irradiated and ion-implanted c-BN. These, formerly known as the radiation centers, RC1, RC2, and RC3 have been identified at the locus of the voids formed by single fs-laser pulse. The method is promising to engineer color centers in c-BN for photonic applications.

cond-mat.mes-hall↗