arXiv subjects

T. Taniguchi

Publications and source records attributed to T. Taniguchi.

389 records · Page 22Linked to original sources

arXiv2010

Multicomponent fractional quantum Hall effect in graphene

We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.

cond-mat.mes-hall↗

arXiv2010

Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

We describe the identification of single- and few- layer boron nitride. Its optical contrast is much smaller than that of graphene but even monolayers are discernable by optimizing viewing conditions. Raman spectroscopy can be used to confirm BN monolayers. They exhibit an upshift in the fundamental Raman mode by up to 4 cm-1. The number of layers in thicker crystals can be counted by exploiting an integer-step increase in the Raman intensity and optical contrast.

cond-mat.mes-hall↗

arXiv2010

Boron nitride substrates for high-quality graphene electronics

Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.

cond-mat.mes-hall↗

arXiv2010

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

We demonstrate that the valence energy-loss function of hexagonal boron nitride (hBN) displays a strong anisotropy in shape, excitation energy and dispersion for momentum transfer q parallel or perpendicular to the hBN layers. This is manifested by e.g. an energy shift of 0.7 eV that cannot be captured by single-particle approaches and is a demonstration of a strong anisotropy in the two-body electron-hole interaction. Furthermore, for in-plane directions of q we observe a splitting of the -plasmon in the M direction that is absent in the K direction and this can be traced back to band-structure effects.

cond-mat.mtrl-sci↗

arXiv2005

Design of a Polarised Positron Source Based on Laser Compton Scattering

We describe a scheme for producing polarised positrons at the ILC from polarised X-rays created by Compton scattering of a few-GeV electron beam off a CO2 or YAG laser. This scheme is very energy effective using high finesse laser cavities in conjunction with an electron storage ring.

physics.acc-ph↗

arXiv2004

Numerical Examination of the Stability of an Exact Two-dimensional Solution for Flux Pile-up Magnetic Reconnection

The Kelvin--Helmholtz (KH) and tearing instabilities are likely to be important for the process of fast magnetic reconnection that is believed to explain the observed explosive energy release in solar flares. Theoretical studies of the instabilities, however, typically invoke simplified initial magnetic and velocity fields that are not solutions of the governing magnetohydrodynamic (MHD) equations. In the present study, the stability of a reconnecting current sheet is examined using a class of exact global MHD solutions for steady state incompressible magnetic reconnection, discovered by Craig & Henton. Numerical simulation indicates that the outflow solutions where the current sheet is formed by strong shearing flows are subject to the KH instability. The inflow solutions where the current sheet is formed by a fast and weakly sheared inflow are shown to be tearing unstable. Although the observed instability of the solutions can be interpreted qualitatively by applying standard linear results for the KH and tearing instabilities, the magnetic field and plasma flow, specified by the Craig--Henton solution, lead to the stabilization of the current sheet in some cases. The sensitivity of the instability growth rate to the global geometry of magnetic reconnection may help in solving the trigger problem in solar flare research.

astro-ph↗

arXiv2001

Susceptibility Inhomogeneity and Non-Fermi-Liquid Behavior in Ce(Ru_{0.5}Rh_{0.5})_2Si_2

Magnetic susceptibility and muon spin rotation (\muSR) experiments have been carried out to study the effect of structural disorder on the non-Fermi-liquid (NFL) behavior of the heavy-fermion alloy Ce(Ru_{0.5}Rh_{0.5})_2Si_2. Analysis of the bulk susceptibility in the framework of disorder-driven Griffiths-phase and Kondo-disorder models for NFL behavior yields relatively narrow distributions of characteristic spin fluctuation energies, in agreement with \muSR linewidths that give the inhomogeneous spread in susceptibility. \muSR and NMR data both indicate that disorder explains the "nearly NFL" behavior observed above \sim2 K, but does not dominate the NFL physics found at low temperatures and low magnetic fields.

cond-mat.str-el↗

arXiv2000

Non-Fermi-Liquid Scaling in Ce(Ru_{0.5}Rh_{0.5})_2Si_2

We study the temperature and field dependence of the magnetic and transport properties of the non-Fermi-liquid compound Ce(Ru_{1-x}Rh_x)_2Si_2 at x=0.5. For fields $\lesssim $0.1T the experimental results show signatures of the presence of Kondo-disorder, expected to be large at this concentration. For larger fields, however, magnetic and transport properties are controlled by the coupling of the conduction electrons to critical spin-fluctuations. The temperature dependence of the susceptibility as well as the scaling properties of the magnetoresistance are in very good agreement with the predictions of recent dynamical mean-field theories of Kondo alloys close to a spin-glass quantum critical point.

cond-mat.str-el↗

arXiv1999

Experimental search for the decay mode K_L -> pi^0 gamma e^+ e^-

We report on results of a search for the decay mode K_L -> pi^0 gamma e^+ e^- conducted by the E162 experiment at KEK. We observed no events and set a 90% confidence level upper limit of Br(K_L -> pi^0 gamma e^+ e^-)< 7.1x10^{-7} for its branching ratio. This is the first published experimental result on this decay mode.

hep-ex↗

arXiv1998

A handy method to monitor outputs from a pulsed light source and its application to photomultiplier's rate effect studies

In order to study photomultiplier's short-term gain stability at high counting rate, we constructed an LED pulsed light source and its output monitor system. For the monitor system, we employed a photon counting method using a photomultiplier as a monitor photon detector. It is found that the method offers a simple way to monitor outputs from a pulsed light source and that, together with an LED light source, it provides a handy way to investigate photomultiplier's rate effects.

physics.ins-det↗

arXiv1998

Observation of the decay mode K_L -> pi^+ pi^- e^+ e^-

We report on results of an experimental search for the K_L -> pi^+ pi^- e^+ e^- decay mode. We found 13.5 +- 4.0 events and determined its branching ratio to be (4.4 +- 1.3(stat) +- 0.5(syst))*10^{-7}. The result agrees well with the theoretical prediction.

hep-ex↗