arXiv subjects

T. Taniguchi

Publications and source records attributed to T. Taniguchi.

At least 73 records · Page 4Linked to original sources

arXiv2024

Impact of Device Resistances in the Performance of Graphene-based Terahertz Photodetectors

In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune (decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

cond-mat.mes-hall↗

arXiv2024

Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons

Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR (λ = 6.5 μm) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process.

cond-mat.mes-hall↗

arXiv2024

Optical response of WSe$_2$-based vertical tunneling junction

Layered materials have attracted significant interest because of their unique properties. Van der Waals heterostructures based on transition-metal dichalcogenides have been extensively studied because of potential optoelectronic applications. We investigate the optical response of a light-emitting tunneling structure based on a WSe\textsubscript{2} monolayer as an active emission material using the photoluminescence (PL) and electroluminescence (EL) experiments performed at low temperature of 5~K. We found that the application of the bias voltage allows us to change both a sign and a value of free carriers concentrations. Consequently, we address the several excitonic complexes emerging in PL spectra under applied bias voltage. The EL signal was also detected and ascribed to the emission in a high-carrier-concentration regime. The results show that the excitation mechanisms in the PL and EL are different, resulting in various emissions in both types of experimental techniques.

cond-mat.mtrl-sci↗

arXiv2024

Composite fermions and parton wavefunctions in twisted graphene on hexagonal boron nitride

In a twisted graphene on hexagonal Boron Nitride, the presence of a gap and the breaking of the symmetry between carbon sublattices leads to multicomponent fractional quantum Hall effect (FQHE) due to the electrons correlation. We report on the FQHE at filling factors nu = k/2 and nu = k/3 with nu > 1, and on the composite fermions at in the nu < 1 lowest landau Level nu = 4/5, 5/7 and 2/3. These fractional states can be described with a partons model, in which the electron is broken down into sub-particles each one residing in an integer quantum Hall effect state; partons are fictitious particles that, glued back together, recover the physical electrons. The parton states host exotic anyons that could potentially form building blocks of a fault-tolerant topological quantum computer.

cond-mat.mes-hall↗

arXiv2024

Field-Induced Criticality in YbCu4Au

YbCu4Au is a unique material exhibiting multiple quantum fluctuations simultaneously. In this study, we investigated the field-induced criticality in YbCu4Au, based on comprehensive micro and macro measurements, including powder X-ray diffraction (XRD), neutron powder diffraction (NPD), nuclear magnetic resonance, magnetization, resistivity, specific heat, muon spin rotation relaxation (muSR), and X-ray absorption spectroscopy (XAS). Single crystals of YbCu4Au were grown, and their crystal structure was determined using XRD, and NPD measurements. Magnetic successive transitions were observed below 1 T by specific heat, resistivity, NPD, and muSR measurements. XAS measurements further indicate that the valence of Yb ions (+2.93) remained unchanged above 2 T. Moreover, the change in quadrupole frequency observed in the previous study is attributable to the electric quadrupole, as the expected value of the electric quadrupole was finite under magnetic fields [S. Wada et al., Journal of Physics: Condensed Matter, 20, 175201 (2008).]. These experimental results suggest that YbCu4Au exhibited bicritical behavior near 1 T, arising from the competition between RKKY interaction, accounting for the magnetic phases, and the Zeeman effect.

cond-mat.str-el↗

arXiv2024

Absence of heat flow in ν = 0 quantum Hall ferromagnet in bilayer graphene

The charge neutrality point of bilayer graphene, denoted as ν = 0 state, manifests competing phases marked by spontaneously broken isospin (spin/valley/layer) symmetries under external magnetic and electric fields. However, due to their electrically insulating nature, identifying these phases through electrical conductance measurements remains challenging. A recent theoretical proposal introduces a novel approach, employing thermal transport measurements to detect these competing phases. Here, we experimentally explore the bulk thermal transport of the ν = 0 state in bilayer graphene to investigate its ground states and collective excitations associated with isospin. While the theory anticipates a finite thermal conductance in the ν = 0 state, our findings unveil an absence of detectable thermal conductance. Through variations in the external electric field and temperature-dependent measurements, our results suggest towards gapped collective excitations at ν = 0 state. Our findings underscore the necessity for further investigations into the nature of ν = 0.

cond-mat.mes-hall↗

arXiv2024

Electric field tunable superconductivity with competing orders in twisted bilayer graphene near magic-angle

Superconductivity (SC) in twisted bilayer graphene (tBLG) has been explored by varying carrier concentrations, twist angles, and screening strength, with the aim of uncovering its origin and possible connections to strong electronic correlations in narrow bands and various resulting broken symmetries. However, the link between the tBLG band structure and the onset of SC and other orders largely remains unclear. In this study, we address this crucial gap by examining in-situ band structure tuning of a near magic-angle ($θ\approx0.95^\circ$) tBLG device with displacement field ($D$) and reveal remarkable competition between SC and other broken symmetries. At zero $D$, the device exhibits superconducting signatures without the resistance peak at half-filling, a characteristic signature with a strong electronic correlation. As $D$ increases, the SC is suppressed, accompanied by the appearance of a resistance peak at half-filling. Hall density measurements reveal that at zero $D$, SC arises around the van Hove singularity (vHs) from an isospin or spin-valley unpolarized band. At higher $D$, the suppression of SC coincides with broken isospin symmetry near half-filling with lifted degeneracy ($g_d \sim 2$). Additionally, as the SC phase becomes weaker with $D$, vHs shifts to higher fillings, highlighting the modification of the underlying band structure with the applied electric field. These findings, with recent theoretical study on SC in tBLG, highlight the competition, rather being connected concomitantly, between SC and other orders promoted by broken symmetries.

cond-mat.mes-hall↗

arXiv2024

Gate-tunable giant superconducting nonreciprocal transport in few-layer $T_{\rm d}$-MoTe$_2$

We demonstrate gate-tunable giant field-dependent nonreciprocal transport (magnetochiral anisotropy) in a noncentrosymmetric superconductor $T_{\rm d}$-MoTe$_2$ in the thin limit. Giant magnetochiral anisotropy (MCA) with a rectification coefficient $γ$ = $3.1 \times 10^6$ T$^{-1}$ A$^{-1}$, is observed at 230 mK, below the superconducting transition temperature ($T_c$). This is one of the largest values reported so far and is likely attributed to the reduced symmetry of the crystal structure. The temperature dependence of $γ$ indicates that the ratchet-like motion of magnetic vortices is the origin of the MCA, as supported by our theoretical model. For bilayer $T_{\rm d}$-MoTe$_2$, we successfully perform gate control of the MCA and realize threefold modulation of $γ$. Our experimental results provide a new route to realizing electrically controllable superconducting rectification devices in a single material.

cond-mat.mes-hall↗

arXiv2024

Infrared spectroscopy of phase transitions in the lowest Landau levels of bilayer graphene

We perform infrared magneto-spectroscopy of Landau level (LL) transitions in dual-gated bilayer graphene. At $ν=4$ when the zeroth LL (octet) is filled, two resonances are observed indicating the opening of a gap. At $ν=0$ when the octet is half-filled, multiple resonances disperse non-monotonically with increasing displacement field, $D$, perpendicular to the sheet, showing a phase transition at modest displacement fields from a canted anti-ferromagnet (CAFM) to the layer-polarized state, with a gap that opens linearly in $D$. When $D=0$ and $ν$ is varied, resonances at $\pmν$ show an electron-hole asymmetry with multiple line splittings as the octet is progressively filled. The $ν=4$ data show good agreement with predictions from a mean-field Hartree-Fock calculation when accounting for multiple tight-binding terms in a four-band model of bilayer graphene. However even by incorporating a valley interaction anisotropy tuned to the CAFM ground state, only partial agreement is found at $ν=0$. Our results suggest additional physics is required to understand bilayer graphene at half-filling.

cond-mat.mes-hall↗

arXiv2024

Frustrated hopping from orbital decoration of a primitive two-dimensional lattice

Materials hosting flat electronic bands are a central focus of condensed matter physics as promising venues for novel electronic ground states. Two-dimensional (2D) geometrically frustrated lattices such as the kagome, dice, and Lieb lattices are attractive targets in this direction, anticipated to realize perfectly flat bands. Synthesizing these special structures, however, poses a formidable challenge, exemplified by the absence of solid-state materials realizing the dice and Lieb lattices. An alternative route leverages atomic orbitals to create the characteristic electron hopping of geometrically frustrated lattices. This strategy promises to expand the list of candidate materials to simpler structures, but is yet to be demonstrated experimentally. Here, we report the realization of frustrated hopping in the van der Waals (vdW) intermetallic Pd$_5$AlI$_2$, emerging from orbital decoration of a primitive square lattice. Using angle-resolved photoemission spectroscopy and quantum oscillations measurements, we demonstrate that the band structure of Pd$_5$AlI$_2$ includes linear Dirac-like bands intersected at their crossing point by a flat band, essential characteristics of frustrated hopping in the Lieb and dice lattices. Moreover, Pd$_5$AlI$_2$ is exceptionally stable, with the unusual bulk band structure and metallicity persisting in ambient conditions down to the monolayer limit. Our ability to realize an electronic structure characteristic of geometrically frustrated lattices establishes orbital decoration of primitive lattices as a new approach towards electronic structures that remain elusive to prevailing lattice-centric searches.

cond-mat.str-el↗

arXiv2024

Ultra-steep slope cryogenic FETs based on bilayer graphene

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-steep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 $μ$V/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature.

cond-mat.mes-hall↗

arXiv2024

The temperature influence on the brightening of neutral and charged dark excitons in WSe$_2$ monolayer

The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) excitons and the negative dark trion (T$^D$) differ substantially at a particular temperature. More importantly, they vanish considerably by about 3 -- 4 orders of magnitude with the temperature increased from 4.2 K to 100 K. The quenching of the dark-related emissions is accompanied by the two-order-of-magnitude increase in the emissions of their neutral bright counterparts, $i.e.$ neutral bright exciton (X$^B$) and spin-singlet (T$^S$) and spin-triplet (T$^T$) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X$^D$ and T$^D$ complexes and the corresponding bright X$^B$, T$^S$, and T$^T$ ones vary with temperature rises from 4.2 K to 100 K. This can be explained in terms of the different exciton-phonon couplings for the bright and dark excitons stemming from their distinct symmetry properties.

cond-mat.mes-hall↗

arXiv2024

Enhanced optical properties of MoSe$_2$ grown by molecular beam epitaxy on hexagonal boron nitride

Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes encapsulated in hexagonal boron nitride (hBN). In this work, we develop a growth strategy to prepare monolayer MoSe$_2$ on hBN flakes by molecular beam epitaxy in the van der Waals regime. It constitutes the first step towards the development of large area single crystalline TMDs encapsulated in hBN for potential integration in electronic or opto-electronic devices. For this purpose, we define a two-step growth strategy to achieve monolayer-thick MoSe$_2$ grains on hBN flakes. The high quality of MoSe$_2$ allows us to detect very narrow PL linewidth down to 5.5 meV at 13 K, comparable to the one of encapsulated exfoliated MoSe$_2$ flakes. Moreover, sizeable PL can be detected at room temperature as well as clear reflectivity signatures of A, B and charged excitons.

cond-mat.mtrl-sci↗

arXiv2024

Characterization of a graphene-hBN superlattice field effect transistor

Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moiré potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures.

cond-mat.mes-hall↗

arXiv2024

Efficient Electron Spin Relaxation by Chiral Phonons in WSe$_2$ Monolayers

In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a consequence, for electrons occupying bottom conduction bands, a carrier spin flip occurs only if there is a simultaneous change of valley. However, very little is known about the intra-valley spin relaxation processes. In this work we have performed stationary and time-resolved photoluminescence measurements in high quality WSe$_2$ monolayers. Our experiments highlight an efficient relaxation from bright to dark excitons, due to a fast intra-valley electron transfer from the top to the bottom conduction band with opposite spins. A combination of experiments and theoretical analysis allows us to infer a spin relaxation time of about $τ_s\sim10~$ps, driven by the interplay between $Γ$-valley chiral phonons and spin-orbit mixing.

cond-mat.mes-hall↗

arXiv2024

Distance dependence of the energy transfer mechanism in WS$_2$-graphene heterostructures

We report on the mechanism of energy transfer in van der Waals heterostructures of the two-dimensional semiconductor WS$_2$ and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (hBN). We record photoluminescence and reflection spectra at interlayer distances between 0.5 nm and 5.8 nm (0-16 hBN layers). We find that the energy transfer is dominated by states outside the light cone, indicative of a Förster transfer process, with an additional contribution from a Dexter process at 0.5 nm interlayer distance. We find that the measured dependence of the luminescence intensity on interlayer distances above 1 nm can be quantitatively described using recently reported values of the Förster transfer rates of thermalized charge carriers. At smaller interlayer distances, the experimentally observed transfer rates exceed the predictions and furthermore depend on excess energy as well as on excitation density. Since the transfer probability of the Förster mechanism depends on the momentum of electron-hole pairs, we conclude that at these distances, the transfer is driven by non-thermalized charge carrier distributions.

cond-mat.mes-hall↗

arXiv2024

High-yield fabrication of bubble-free magic-angle twisted bilayer graphene devices with high twist-angle homogeneity

Magic-angle twisted bilayer graphene (MATBG) stands as one of the most versatile materials in condensed-matter physics due to its hosting of a wide variety of exotic phases while also offering convenient tunability. However, the fabrication of MATBG is still manual, and remains to be a challenging and inefficient process, with devices being highly dependent on specific fabrication methods, that often result in inconsistency and variability. In this work, we present an optimized protocol for the fabrication of MATBG samples, for which we use deterministic graphene anchoring to stabilize the twist-angle, and a careful bubble removal techniques to ensure a high twist-angle homogeneity. We use low-temperature transport experiments to extract the average twist-angle between pairs of leads. We find that up to 38 percent of the so fabricated devices show micrometer square sized regions with a twist-angle in the range 1.1 plus/minus 0.1 degrees, and a twist-angle variation of only 0.02 degrees, where in some instances such regions were up to 36 micrometer square large. We are certain that the discussed protocols can be directly transferred to non-graphene materials, and will be useful for the growing field of moire materials.

cond-mat.mes-hall↗

arXiv2024

One-dimensional proximity superconductivity in the quantum Hall regime

Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration.

cond-mat.mes-hall↗