arXiv subjects

T. Taniguchi

Publications and source records attributed to T. Taniguchi.

At least 109 records · Page 6Linked to original sources

arXiv2023

Non-identical moiré twins in bilayer graphene

The superlattice obtained by aligning a monolayer graphene and boron nitride (BN) inherits from the hexagonal lattice a sixty degrees periodicity with the layer alignment. It implies that, in principle, the properties of the heterostructure must be identical for 0$^{\circ}$ and 60$^{\circ}$ of layer alignment. Here, we demonstrate, using dynamically rotatable van der Waals heterostructures, that the moiré superlattice formed in a bilayer graphene/BN has different electronic properties at 0$^{\circ}$ and 60$^{\circ}$ of alignment. Although the existence of these non-identical moiré twins is explained by different relaxation of the atomic structures for each alignment, the origin of the observed valley Hall effect remains to be explained. A simple Berry curvature argument do not hold to explain the hundred and twenty degrees periodicity of this observation. Our results highlight the complexity of the interplay between mechanical and electronic properties on moiré structure and the importance of taking into account atomic structure relaxation to understand its electronic properties.

cond-mat.mes-hall↗

arXiv2023

Influence of oxygen-coordination number on the electronic structure of single-layer La-based cuprates

We present an angle-resolved photoemission spectroscopy study of the single-layer T*-type structured cuprate SmLa$_{1-x}$Sr$_x$CuO$_4$ with unique five-fold pyramidal oxygen coordination. Upon varying oxygen content, T*-SmLa$_{1-x}$Sr$_x$CuO$_4$ evolved from a Mott-insulating to a metallic state where the Luttinger sum rule breaks down under the assumption of a large hole-like Fermi surface. This is in contrast with the known doping evolution of the structural isomer La$_{2-x}$Sr$_x$CuO$_4$ with six-fold octahedral coordination. In addition, quantitatively characterized Fermi surface suggests that the empirical $T_\mathrm{c}$ rule for octahedral oxygen-coordination systems does not apply to T*-SmLa$_{1-x}$Sr$_x$CuO$_4$. The present results highlight unique properties of the T*-type cuprates possibly rooted in its oxygen coordination, and necessitate thorough investigation with careful evaluation of disorder effects.

cond-mat.str-el↗

arXiv2023

Direct Determination of Spin-Splitting Energy in Magnetic Graphene by Landau Fan Shifts

Spin-polarized two-dimensional materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, we demonstrate the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3Fe5O12, as confirmed by its X-ray magnetic circular dichroism. The spin-splitting energies are directly measured and visualized by the shift in their landau fan diagram mapped by analyzing the measured subnikov-de-Haas oscillations as a function of applied electric fields, showing consistent fit with our first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by cooling fields. Our methods and results are applicable to other two-dimensional (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.

cond-mat.mtrl-sci↗

arXiv2023

Electroluminescence of the graphene 2D semi-metal

Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating the radiative emission of semi-metallic graphene field-effect transistors over a broad spectral range, spanning the near- and mid-infrared, we demonstrate direct far-field electroluminescence from hBN-encapsulated graphene in the mid-infrared under large bias in ambient conditions. Through a series of test experiments ruling out its incandescence origin, we determine that the electroluminescent signal results from the electrical pumping produced by interband tunneling. We show that the mid-infrared electroluminescence is spectrally shaped by a natural quarter-wave resonance of the heterostructure. This work invites a reassessment of the use of metals and semi-metals as non-equilibrium light emitters, and the exploration of their intriguing specificities in terms of carrier injection and relaxation, as well as emission tunability and switching speed.

cond-mat.mes-hall↗

arXiv2023

Electrical excitation of carbon centers in hexagonal boron nitride with tuneable quantum efficiency

Defect centers in wide-band-gap crystals attracted considerable attention due to the realisations of qubits, sensors, or single photon emitters at room temperature. The family of these centers is constantly growing, including well-known examples such as nitrogen-vacancy centers in diamond, silicon-vacancy in silicon carbide, chromium substitutions in aluminium oxide, and many others. Unfortunately, such defect centers embedded in highly insulating crystals have been notoriously difficult to excite electrically. Herewith, we present a realisation of insulating light-emitting diodes based on carbon centers in hexagonal boron nitride. The rational design of the vertical tunnelling devices via van der Waals technology enabled us to control the charge dynamics related to non-radiative tunelling, defect-to-band electroluminescence, and intradefect electroluminescence. The fundamental understanding of the tunnelling events enabled us to achieve high efficiency of electrical excitation, which exceeded by a few orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. A combination of a Stark effect and screening by band electrons provide a control knob for tuning the energy of emission. With this work, we solve an outstanding problem of creating electrically driven devices realised with defect centers in wide-band-gap crystals, which are relevant in the domain of optoelectronics, telecommunication, computation, or sensing.

cond-mat.mes-hall↗

arXiv2023

Electron density control in tungsten diselenide monolayers via photochlorination

Modulation of the Fermi level using an ultraviolet (UV)-assisted photochemical method is demonstrated in tungsten diselenide monolayers. Systematic shifts and relative intensities between charged and neutral exciton species indicate a progressive and controllable decrease of the electron density and switch tungsten diselenide from n-type to a p-type semiconductor. The presence of chlorine in the 2D crystal shifts the Fermi level closer to the valence band while the effect can be only partially reversible via continuous wave laser rastering process. The presence of chlorine species in the lattice is validated by X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations predict that adsorption of chlorine on the selenium vacancy sites leads to p-type doping. The results of our study indicate that photochemical techniques have the potential to enhance the performance of various 2D materials, making them suitable for potential applications in optoelectronics.

cond-mat.mtrl-sci↗

arXiv2023

Exploring methods for creation of Boron-vacancies in hexagonal Boron Nitride exfoliated from bulk crystal

Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper we study various techniques, focused ion beam (FIB), electron irradiation and ion implantation, for the preparation of hBN flakes from bulk crystals, and relevant post-processing treatments to create VB${^-}$s as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimising implantation parameters, while careful sample cleaning proved important to achieve best results.

physics.app-ph↗

arXiv2023

Monolayer WS$_2$ electro- and photo-luminescence enhancement by TFSI treatment

Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantum efficiency as low as$\sim$10$^{-4}$\%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS$_2$-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs

cond-mat.mtrl-sci↗

arXiv2023

Mapping quantum Hall edge states in graphene by scanning tunneling microscopy

Quantum Hall edge states are the paradigmatic example of the bulk-boundary correspondence. They are prone to intricate reconstructions calling for their detailed investigation at high spatial resolution. Here, we map quantum Hall edge states of monolayer graphene at a magnetic field of 7 T with scanning tunneling microscopy. The graphene sample features a gate-tunable lateral interface between areas of different filling factor. We compare the results with detailed tight-binding calculations quantitatively accounting for the perturbation by the tip-induced quantum dot. We find that the edge state pattern is mapped with little perturbation by adequate choice of gate voltage. We observe extended compressible regions, the antinodal structure of edge states and their meandering along the lateral interface.

cond-mat.mes-hall↗

arXiv2023

Control of the Bright-Dark Exciton Splitting using Lamb Shift in a 2D Semiconductor

We have investigated the exciton fine structure in atomically thin WSe2 -based van der Waals heterostructures where the density of optical modes at the location of the semiconductor monolayer can be tuned. The energy splitting $Δ$ between the bright and dark exciton has been measured by photoluminescence spectroscopy. We demonstrate that $Δ$ can be tuned by a few meV, as a result of a significant Lamb shift of the optically active exciton which arises from emission and absorption of virtual photons triggered by the vacuum fluctuations of the electromagnetic field. We also measured strong variations of the bright exciton radiative linewidth, as a result of the Purcell effect. All these experimental results illustrate the strong sensitivity of the excitons to local vacuum field. We found a very good agreement with a model that demonstrates the equivalence, for our system, of a classical electrodynamical transfer matrix formalism and quantum-electrodynamical approach. The bright-dark splitting control demonstrated here should apply to any semiconductor structures.

cond-mat.mes-hall↗

arXiv2023

Excited state spectroscopy and spin splitting in atomically thin quantum dots

Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured by exploiting the discrete energy spectrum on a quantum dot. However, the quantum dots realized in TMDCs has yet to reach the required quality for reliable measurement of g-factor. Quantum dot sizes reported in TMDCs so far are not small enough to observe discrete energy levels on them. Here, we report on electron transport through discrete energy levels of quantum dot in a single layer MoS2. The quantum dot energy levels are separated by few (5-6) meV such that the ground state and the excited state transitions are clearly visible. This well resolved energy separation allows us to accurately measure the ground state g-factor of ~5 in MoS2 quantum dots. We observe a spin filling sequence in our quantum dot under perpendicular magnetic field. Such a system offers an excellent testbed to measure the key parameters for evaluation and implementation of spin-valley qubits in TMDCs, thus accelerating the development of quantum systems in two dimensional semiconducting TMDCs.

cond-mat.mes-hall↗

arXiv2023

Interlayer excitons in semiconductor bilayers under a strong electric field

Excitons in bilayer transition metal dichalcogenides (2L-TMDs) are Coulomb-bound electron/hole pairs that can be viewed as broadly tunable analogs of atomic or molecular systems. Here, we study the properties of 2L-TMD excitons under strong electric field. To overcome the field limit, reached in previous experiments, we developed a new organic/inorganic molecular gating technique. Our approach allows reaching the field > 0.27 V nm-1, about twice higher than previously available. Under this field inter and intra-layer excitonic are brought into an energetic resonance, allowing us to discover new emergent properties of the resulting hybridized states. First, as the result of hybridization, intralayer excitons acquire an interlayer character. Second, the same hybridization allows us to detect new excitonic species. Third, we observe an ultra-strong Stark splitting of > 380 meV with exciton energies tunable over a large range of the optical spectrum, with potential implications for optoelectronics. Our work creates new possibilities for using strong electric fields to unlock new physical regimes and control exciton hybridization in 2D heterostructures and other systems.

cond-mat.mes-hall↗

arXiv2023

Magneto-exciton limit of quantum Hall breakdown in graphene

One of the intrinsic drift velocity limit of the quantum Hall effect is the collective magneto-exciton (ME) instability. It has been demonstrated in bilayer graphene (BLG) using noise measurements. We reproduce this experiment in monolayer graphene (MLG), and show that the same mechanism carries a direct relativistic signature on the breakdown velocity. Based on theoretical calculations of MLG- and BLG-ME spectra, we show that Doppler-induced instabilities manifest for a ME phase velocity determined by a universal value of the ME conductivity, set by the Hall conductance.

cond-mat.mes-hall↗

arXiv2023

High-field 1/f noise in hBN-encapsulated graphene transistors

Low-frequency 1/f noise in electronics is a conductance fluctuation, that has been expressed in terms of a mobility "$α$-noise" by Hooge and Kleinpenning. Understanding this noise in graphene is a key towards high-performance electronics. Early investigations in diffusive graphene have pointed out a deviation from the standard Hooge formula, with a modified expression where the free-carrier density is substituted by a constant density $n_Δ\sim10^{12}\;\mathrm{cm^{-2}}$. We investigate hBN-encapsulated graphene transistors where high mobility gives rise to the non-linear velocity-saturation regime. In this regime, the $α$-noise is accounted for by substituting conductance by differential conductance $G$, ressulting in a bell-shape dependence of flicker noise with bias voltage $V$. The same analysis holds at larger bias in the Zener regime, with two main differences: the first one is a strong enhancement of the Hooge parameter reflecting the hundred-times larger coupling of interband excitations to the hyperbolic phonon-polariton (HPhP) modes of the mid-infrared Reststrahlen (RS) bands of hBN. The second is an exponential suppression of this coupling at large fields, which we attribute to decoherence effects. We also show that the HPhP bands control the amplitude of flicker noise according to the graphene-hBN thermal coupling estimated with microwave noise thermometry. The phenomenology of $α$-noise in graphene supports a quantum-coherent bremsstrahlung interpretation of flicker noise.

cond-mat.mes-hall↗

arXiv2023

Mesoscopic Klein-Schwinger effect in graphene

Strong electric field annihilation by particle-antiparticle pair creation, also known as the Schwinger effect, is a non-perturbative prediction of quantum electrodynamics. Its experimental demonstration remains elusive, as threshold electric fields are extremely strong and beyond current reach. Here, we propose a mesoscopic variant of the Schwinger effect in graphene, which hosts Dirac fermions with an approximate electron-hole symmetry. Using transport measurements, we report on universal 1d-Schwinger conductance at the pinchoff of ballistic graphene transistors. Strong pinchoff electric fields are concentrated within approximately 1 $μ$m of the transistor's drain, and induce Schwinger electron-hole pair creation at saturation. This effect precedes a collective instability toward an ohmic Zener regime, which is rejected at twice the pinchoff voltage in long devices. These observations advance our understanding of current saturation limits in ballistic graphene and provide a direction for further quantum electrodynamic experiments in the laboratory.

cond-mat.mes-hall↗

arXiv2022

Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene

Recently, magic-angle twisted bilayer graphene (MATBLG) has shown the emergence of various interaction-driven novel quantum phases at the commensurate fillings of the moir'e superlattice, while the charge neutrality point (CNP) remains mostly a vanilla insulator. Here, we show an emerging phase of nearly compensated semimetallicity at the CNP of twisted double bilayer graphene (TDBLG), a close cousin of MATBLG, with signatures of electronic correlation. Using electrical and thermal transport, we find almost two orders of magnitude enhancement of the thermopower in magnetic fields much smaller than the extreme quantum limit, accompanied by a large magnetoresistance($\sim 2500\%$) at CNP. This provides indisputable experimental evidence that TDBLG near CNP is a compensated semimetal. Moreover, at low temperatures, we observe an unusual sublinear temperature dependence of resistance. A recent theory predicts the formation of an excitonic metal near CNP, where small electron and hole pockets coexist. We understand the sublinear temperature dependence in terms of critical fluctuations in this theory.

cond-mat.mes-hall↗

arXiv2022

Spin-orbit coupling-enhanced valley ordering of malleable bands in twisted bilayer graphene on WSe2

New phases of matter can be stabilized by a combination of diverging electronic density of states, strong interactions, and spin-orbit coupling. Recent experiments in magic-angle twisted bilayer graphene (TBG) have uncovered a wealth of novel phases as a result of interaction-driven spin-valley flavour polarization. In this work, we explore correlated phases appearing due to the combined effect of spin-orbit coupling-enhanced valley polarization and large density of states below half filling ($ν\lesssim 2$) of the moiré band in a TBG coupled to tungsten diselenide. We observe anomalous Hall effect, accompanied by a series of Lifshitz transitions, that are highly tunable with carrier density and magnetic field. Strikingly, the magnetization shows an abrupt sign change in the vicinity of half-filling, confirming its orbital nature. The coercive fields reported are about an order of magnitude higher than previous studies in graphene-based moiré systems, presumably aided by a Stoner instability favoured by the van Hove singularities in the malleable bands. While the Hall resistance is not quantized at zero magnetic fields, indicative of a ground state with partial valley polarization, perfect quantization and complete valley polarization are observed at finite fields. Our findings illustrate that singularities in the flat bands in the presence of spin-orbit coupling can stabilize ordered phases even at non-integer moiré band fillings.

cond-mat.mes-hall↗

arXiv2022

Single-photon detection using high-temperature superconductors

The detection of individual quanta of light is important for quantum computation, fluorescence lifetime imaging, single-molecule detection, remote sensing, correlation spectroscopy, and more. Thanks to their broadband operation, high detection efficiency, exceptional signal-to-noise ratio, and fast recovery times, superconducting nanowire single-photon detectors (SNSPDs) have become a critical component in these applications. The operation of SNSPDs based on conventional superconductors, which have a low critical temperature ($T_c$), requires costly and bulky cryocoolers. This motivated exploration of other superconducting materials with higher $T_c$ that would enable single-photon detection at elevated temperatures, yet this task has proven exceedingly difficult. Here we show that with proper processing, high-$T_c$ cuprate superconductors can meet this challenge. We fabricated superconducting nanowires (SNWs) out of thin flakes of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and La$_{1.55}$Sr$_{0.45}$CuO$_4$/La$_2$CuO$_4$ (LSCO-LCO) bilayer films and demonstrated their single-photon response up to $25$ and $8$ K, respectively. The single-photon operation is revealed through the linear scaling of the photon count rate (PCR) on the radiation power. Both of our cuprate-based SNSPDs exhibited single-photon sensitivity at the technologically-important $1.5$ $μ$m telecommunications wavelength. Our work expands the family of superconducting materials for SNSPD technology, opens the prospects of raising the temperature ceiling, and raises important questions about the underlying mechanisms of single-photon detection by unconventional superconductors.

cond-mat.supr-con↗