Searcharxiv⌕ Search

arXiv subjects

T. V. Shubina

Publications and source records attributed to T. V. Shubina.

At least 19 recordsLinked to original sources

Self-balancing luminescence kinetics of charged excitons in WS$_2$ monolayer

Two-dimensional tungsten-based transition metal dichalcogenides exhibit a rich emission spectrum with distinct lines of exciton and biexciton states, neutral and charged, which are typically considered as independent entities. Here, we present a study of the emission kinetics of a WS$_2$ monolayer, demonstrating that these states together form a single interacting ensemble, with their population and depletion mutually coordinated with temperature. Dark trions make a long-lived contribution to the bright trion on a time scale of 200-300 picoseconds, and replenishment from dark states promotes intense luminescence of charged biexcitons. The developed self-consistent rate equation model reproduces the temperature dependence of the kinetics well, opening the way to controlling exciton states in such materials.

cond-mat.mes-hall↗

Coherent superposition of emitted and resonantly scattered photons from a two-level system in a cavity driven by an even-$π$ pulse

We examine the nature and quantum satistics of a multiphoton bunch generated under resonant excitation by even-$π$ pulses of a charged quantum dot in a cavity. Experiments with Rabi oscillations in time-resolved photoluminescence, varying pulse duration, and cavity mode detuning show that this multiphoton state is a coherent superposition of emitted photons and resonantly scattered laser photons. The developed model incorporates both resonant scattering and re-excitation mechanisms, allowing us to describe the quantum statistics of the multiphoton state, which is controlled by the coupling between the quantum dot and optical modes in the cavity.

cond-mat.mes-hall↗

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

The paper reports on fundamental properties of the GaN/AlN quantum wells (QWs) with nominal subcritical thicknesses of 0.75-2 monolayers (MLs). They are grown by plasma-activated molecular beam epitaxy, varying either the nominal thickness or the gallium-to-nitrogen flux ratio. In situ monitoring reveals difference in 2D nucleation and step-flow growth modes of the QWs. The emission charactestics of QWs with integer thicknesses of 1 and 2 MLs depend weakly on the growth mechanism. In contrast, the intensity and spectral position luminescence of QWs with fractional-ML thicknesses are determined by the growth mechanism. Using ab initio calculations, a phenomenological model is proposed that describes fractional-ML QWs either as arrays of 2D quantum disks or as arrays of 2D quantum ribbons, in cases where 2D nucleation or step-flow growth mechanisms predominate, respectively. This model is generally consistent with experimental data on photo- and cathodoluminescence of heterostructures with multiple (250) GaN/AlN QWs. These heterostructures, when pumped by electrom beam at an energy 12.5 keV with a maximum pulse current of 2 A, exhibit linear current dependences of optical peak powers up to 1 and 37 W for wavelengths of 228 and 256 nm, respectively, making them promising for use as powerfull ultraviolet-C emitters.

cond-mat.mtrl-sci↗

Stimulated down-conversion of single-photon emission in a quantum dot placed in a target-frequency microcavity

Currently, two optical processes are mainly used to realize single photon sources: deterministic transitions in a semiconductor quantum dot (QD) placed in a microcavity and spontaneous frequency down-conversion in materials with intrinsic nonlinearity. In this work, we consider another approach that combines the advantages of both, such as high power with on-demand generation from QDs and the possibility of frequency tuning from nonlinear sources. For this purpose, we use stimulated frequency down-conversion occurring directly in the QD inside a microcavity designed not to the exciton frequency in the QD but to the target single photon frequency, which is set by the difference between the exciton resonance and the stimulating laser energies. This down-conversion arises from the second-order nonlinear interaction of an exciton (bright heavy-hole or dark) and a light-hole exciton in the stimulating laser field. We present an analytical model for such a down-conversion process and evaluate its efficiency for a widely sought-after single photon source for the telecom C-band (1530-1565 nm). We show that the emission rate of down-converted single photons can approach MHz. At certain conditions, this process is comparable in efficiency to direct emission from an InAs/GaAs QD at 920 nm, which is outside the cavity mode.

cond-mat.mes-hall↗

Direct observation of split-mode exciton-polaritons in a single MoS$_2$ nanotube

A single nanotube synthesized from a transition metal dichalcogenide (TMDC) exhibits strong exciton resonances and, in addition, can support optical whispering gallery modes. This combination is promising for observing exciton-polaritons without an external cavity. However, traditional energy-momentum-resolved detection methods are unsuitable for this tiny object. Instead, we propose to use split optical modes in a twisted nanotube with the flattened cross-section, where a gradually decreasing gap between the opposite walls leads to a change in mode energy, similar to the effect of the barrier width on the eigenenergies in the double-well potential. Using micro-reflectance spectroscopy, we investigated the rich pattern of polariton branches in single MoS$_2$ tubes with both variable and constant gaps. Observed Rabi splitting in the 40 - 60 meV range is comparable to that for a MoS$_2$ monolayer in a microcavity. Our results, based on the polariton dispersion measurements and polariton dynamics analysis, present a single TMDC nanotube as a perfect polaritonic structure for nanophotonics.

cond-mat.mes-hall↗

Demultiplexed Single-Photon Source with a Quantum Dot Coupled to Microresonator

The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability of the recombination channel, which can switch spontaneously between exciton and trion. We show that dominant recombination through neutral exciton states can be achieved by careful control of the doping profile near an epitaxial InAs/GaAs quantum dot placed in a columnar microcavity with distributed Bragg reflectors. The Hong-Ou-Mandel experiments carried out in the fabricated device demonstrate the degree of indistinguishability of 91% of successively emitted single photons within 242 ns at an efficiency of 10% inside a single-mode optical fiber. The achieved brightness made it possible to implement spatio-temporal demultiplexing of photons in six independent spatial modes with an in-fiber generation frequency of more than 0.1 Hz.

quant-ph↗

State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods

Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as compared with blue and green ones. To clarify the problem, we have performed power and temperature dependent, as well as time-resolved measurements of photoluminescence (PL) in NRs of different In content and diameter. These studies have shown that the dominant PL bands originate from nonpolar and semipolar QWs, while a broad yellow-red band arises mostly from defects in the GaN core. Intensity of red emission from the polar QWs at the NR tip is fatally small. Our calculation of electromagnetic field distribution inside the NRs shows a low density of photon states in the tip that suppresses the red radiation. We suggest a design of hybrid NRs, in which polar QWs, located inside the GaN core, are pumped by UV-blue radiation of nonpolar QWs. Possibilities of radiative recombination rate enhancement by means of the Purcell effect are discussed.

cond-mat.mtrl-sci↗

Towards exciton-polaritons in MoS$_2$ nanotubes

We measure low-temperature micro-photoluminescence spectra along a MoS$_2$ nanotube, which exhibit the peaks of the optical whispering gallery modes below the exciton resonance. The variation of the position and intensity of these peaks is used to quantify the change of the nanotube geometry. The width of the peaks is shown to be determined by the fluctuations of the nanotube wall thickness and propagation of the detected optical modes along the nanotube. We analyse the dependence of the energies of the optical modes on the wave vector along the nanotube axis and demonstrate the potential of the high-quality nanotubes for realization of the strong coupling between exciton and optical modes with the Rabi splitting reaching 400 meV. We show how the formation of exciton-polaritons in such structures will be manifested in the micro-photoluminescence spectra.

cond-mat.mes-hall↗

InSe as a case between 3D and 2D layered crystals for excitons

We demonstrate the successive appearance of the exciton, biexciton, and P band of the exciton-exciton scattering with increasing excitation power in the photoluminescence of indium selenide layered crystals. The strict energy and momentum conservation rules of the P band are used to reexamine the exciton binding energy. The new value $\geq 20$ meV is markedly higher than the currently accepted 14 meV, being however well consistent with the robustness of excitons up to room temperature. A peak controlled by the Sommerfeld factor is found near the bandgap ($\sim 1.36$ eV), which puts the question on the pure three-dimensional character of the exciton in InSe, which has been assumed up to now. Our findings are of paramount importance for the successful application of InSe in nanophotonics.

cond-mat.mtrl-sci↗

Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides

Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review presents the state of the art in the knowledge of the optical properties of TMD NTs. We first evaluate general properties of multilayered TMD crystals, and analyze available data on electronic band structure and optical properties of related NTs. Then, the technology for the formation and the structural characteristics of TMD NTs are represented, focusing on the structures synthesized by chemical transport reaction. The core of this work is the presentation of the ability of TMD NTs to emit bright photoluminescence (PL), which has been discovered recently. By means of micro-PL spectroscopy of individual tubes we show that excitonic transitions relevant to both direct and indirect band gaps contribute to the emission spectra of the NTs despite the presence of dozens of monolayers in their walls. We highlight the performance of the tubes as efficient optical resonators, whose confined optical modes strongly affect the emission bands. Finally, a brief conclusion is presented, along with an outlook of the future studies of this novel member of the family of radiative NTs, which have unique potential for different nanophotonics applications.

cond-mat.mtrl-sci↗

Multiwall nanotubes of molybdenum disulfide as optical resonators

We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall. The experimental observation of the resonances in $μ$-PL allows one to use them as a contactless method of the estimation of the wall width. Our findings open a way to use such NTs as polarization-sensitive components of nanophotonic devices.

cond-mat.mes-hall↗

Spectroscopic signatures of many-particle energy levels in non-covalently doped single-wall carbon nanotubes

We report the first observation of an optical transition from a ground trion state T to excited trion state T* in (6,5) single-wall carbon nanotubes non-covalently doped with hydrochloric acid. The position of such an excited trion level T* is estimated as 2,12 eV, while the ground trion level T has an energy of 1,08 eV. Besides, pump-probe transient absorption spectroscopy indicates that the ground trion level T cannot be excited directly. Instead, we propose that trions form after nonradioactive relaxation from excitons, dressed by interaction with doping induced hole-polarons. We also report a complete exciton-to-trion conversion by means of photoluminescence spectroscopy, thus supporting existence of the polaron-dressed exciton energy level in p-doped single-wall carbon nanotubes.

cond-mat.mes-hall↗

Resonant photonic crystals based on van der Waals heterostructures

We propose to use 2D monolayers possessing optical gaps and high exciton oscillator strength as an element of one-dimensional resonant photonic crystals. We demonstrate that such systems are promising for the creation of effective and compact delay units. In the transition-metal-dichalcogenide-based structures where the frequencies of Bragg and exciton resonances are close, a propagating short pulse can be slowed down by few picoseconds while the pulse intensity decreases only 2 - 5 times. This is realized at the frequency of the "slow" mode situated within the stopband. The pulse retardation and attenuation can be controlled by detuning the Bragg frequency from the exciton resonance frequency.

cond-mat.mtrl-sci↗

III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to near infrared

Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are in greatest demand. Here, we present epitaxial site--controlled III--nitride cup--cavities which can operate from ultraviolet to near--infrared, supporting quasi whispering gallery modes up to room temperature. In these cavities, the refractive index variation near an absorption edge causes the remarkable effect of mode switching, which is accompanied by the change of spatial intensity distribution, concentration of light efficiently into a subwavelength volume, and emission of terahertz photons. At a distance from the edge, the mode-related narrow emission lines have stable energies and widths at different temperatures. Moreover, their energies are identical in the large 'ripened' monocrystal cavities. Our results shed light on the mode behavior in the semiconductor cavities and open the way for single--growth--run manufacturing the devices comprising an active region and a cavity with tunable mode frequencies.

cond-mat.mtrl-sci↗

Excitonic parameters of GaN studied by time-of-flight spectroscopy

We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as other spectra, shows that a homogeneous width of the order of 10 μeV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.

cond-mat.mtrl-sci↗

Delay and distortion of slow light pulses by excitons in ZnO

Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6 ns at 3.374 eV with a 0.3 mm propagation length. Modelling the data of cw and time-of-flight spectroscopies has enabled us to determine the excitonic parameters, inherent for bulk ZnO. We reveal the restrictions on these parameters induced by the light attenuation, as well as a discrepancy between the parameters characterizing the surface and internal regions of the crystal.

cond-mat.mtrl-sci↗

Terahertz radiation due to random grating coupled surface plasmon polaritons

We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of surface plasmon polaritons supported by the accumulation layer to the THz emission. The principal emission band occupies the 2-6 THz spectral range. We establish a link between the shape of emission spectra and the structural factor of the random grating and show that the change of slope of power dependencies is characteristic for temperature-dependent plasmonic mechanisms. The super-linear rise of a THz emission intensity on applied electric power provides advantage of such materials in emission yield.

cond-mat.mtrl-sci↗

InN/In nanocomposites: Evidences of plasmonic effects and hidden gap

InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal absorption edge in the semiconductor host, as given by a photovoltaic response, is markedly higher than the onset of thermally detected absorption. These findings, being strongly suggestive of plasmon-dominated emission and absorption, are discussed in terms of electromagnetic enhancement taking into account the In parallel-band transitions.

cond-mat.mtrl-sci↗