arXiv subjects

T. W. Kang

Publications and source records attributed to T. W. Kang.

8 recordsLinked to original sources

arXiv2011

Crossover critical behavior of Ga1-xMnxAs

The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, the critical exponent α for the samples investigated has been determined. With approaching close to the critical temperature, the crossover from the mean-field-like to the Ising-like critical behavior has been observed. From the crossover behavior the values of the Ginzburg number and the exchange interaction length in Ga1-xMnxAs with different concentrations of Mn were determined.

cond-mat.mtrl-sci↗

arXiv2010

Specific heat study of Ga1-xMnxAs

Specific heat measurements were used to study the magnetic phase transition in Ga1-xMnxAs. Two different types of Ga1-xMnxAs samples have been investigated. The sample with a Mn concentration of 1.6% shows insulating behavior, and the sample with a Mn concentration of 2.6% is metallic. The temperature dependence of the specific heat for both samples reveals a pronounced lambda-shaped peak near the Curie temperature, which indicates a second-order phase transition in these samples. The critical behavior of the specific heat for Ga1-xMnxAs samples is consistent with the mean-field behavior with Gaussian fluctuations of the magnetization in the close vicinity of TC.

cond-mat.mtrl-sci↗

arXiv2007

X-ray magnetic circular dichroism characterization of GaN/Ga1-xMnxN digital ferromagnetic heterostructure

We have investigated the magnetic properties of a GaN/Ga1-xMnxN (x = 0.1) digital ferromagnetic heterostructure (DFH) showing ferromagnetic behavior using soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). The Mn L2,3-edge XAS spectra were similar to those of Ga1-xMnxN random alloy thin films, indicating a substitutional doping of high concentration Mn into GaN. From the XMCD measurements, it was revealed that paramagnetic and ferromagnetic Mn atoms coexisted in the Ga1-xMnxN digital layers. The ferromagnetic moment per Mn atom estimated from XMCD agreed well with that estimated from SQUID measurements. From these results, we conclude that the ferromagnetic behavior of the GaN/Ga1-xMnxN DFH sample arises only from substitutional Mn2+ ions in the Ga1-xMnxN digital layers and not from ferromagnetic precipitates. Subtle differences were also found from the XMCD spectra between the electronic states of the ferromagnetic and paramagnetic Mn2+ ions.

cond-mat.mtrl-sci↗

arXiv2006

Modulation of the Curie Temperature in Ferromagnetic/Ferroelectric Hybrid Double Quantum Wells

We propose a ferromagnetic/ferroelectric hybrid double quantum well structure, and present an investigation of the Curie temperature (Tc) modulation in this quantum structure. The combined effects of applied electric fields and spontaneous electric polarization are considered for a system that consists of a Mn δ-doped well, a barrier, and a p-type ferroelectric well. We calculate the change in the envelope functions of carriers at the lowest energy sub-band, resulting from applied electric fields and switching the dipole polarization. By reversing the depolarizing field, we can achieve two different ferromagnetic transition temperatures of the ferromagnetic quantum well in a fixed applied electric field. The Curie temperature strongly depends on the position of the Mn δ-doped layer and the polarization strength of the ferroelectric well.

cond-mat.mtrl-sci↗

arXiv2005

Equations for filling factor estimation in opal matrix

We consider two equations for the filling factor estimation of infiltrated zinc oxide (ZnO) in silica (SiO_2) opal and gallium nitride in ZnO opal. The first equation is based on the effective medium approximation, while the second one - on Maxwell-Garnett approximation. The comparison between two filling factors shows that both equations can be equally used for the estimation of the quantity of infiltrated nanocrystals inside opal matrix.

physics.optics↗

arXiv2005

Deep level emission of ZnO nanoparticles deposited inside UV opal

The temperature-dependent photoluminescence (PL) spectra of zinc oxide (ZnO) nanocrystals deposited inside the ultraviolet (UV) opal were studied. ZnO was grown in the voids between FCC packed silicon dioxide spheres using spray pyrolysis under ultrasonic vibration in the solution containing a zinc nitrate precursor. The ZnO nanoparticles inside opal matrix with UV photonic band-gap exhibit suppression of the excitonic emission and enhancement of the deep level emission. Suppression of the excitonic lines is due to the inhibition of spontaneous emission, while enhancement and broadening of the DL emission in the green spectral region is due to Purcell effect. The infiltration of ZnO inside the photonic crystal may be a useful technique to increase its emission efficiency in the selected spectral region.

physics.optics↗

arXiv2005

Metastability from Photoluminescence of n-type GaN

We measured the temperature dependence of photoluminescence involved with the metastability of unintentionally doped GaN. Reaction energy U of donor atom is 0.1eV and shallow donor is more stable than deep center. The impurity transition was applied to unintentionally doped GaN at low temperature and reaction energy U was provided for shallow-deep transition. We propose that the origin of DX center in unintentionally doped wurtize GaN is considered to be an oxygen impurity instead of silicon.

cond-mat.mtrl-sci↗

arXiv2004

Anomalous Hall effect in insulating Ga1-xMnxAs

We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x = 0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga1-xMnxAs eventually disappears, and paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in Ga1-xMnxAs (x = 0.085) has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma [Phys.Rev.Lett. 88, 247202 (2002)].

cond-mat.mtrl-sci↗