T. Wahlbrink | Searcharxiv

arXiv2008

Mobility in Graphene Double Gate Field Effect Transistors

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values.

cond-mat.mtrl-sci↗

arXiv1998

Observation of magnetic order in La_{1.9}Sr_{0.1}CuO_{4} from two-magnon Raman scattering

We reported two-magnon Raman scattering from La_{1.9}Sr_{0.1}CuO_4, which has a suppressed Tc=12 K, as the temperature is lowered below 37 K and an ordered spin phase is formed. The two-magnon Raman intensity increases with decreasing temperature. The magnetic scattering in La_{1.9}Sr_{0.1}CuO_4 is totally different from that reported in the parent compound La_2CuO_4. We analyze the line shape of the two-magnon scattering within the traditional Loudon-Fleury theory and find the superexchange constant J=1052 cm^{-1}. The calculation of the frequency moment suggests that the quantum fluctuations are very weak in the system. The room temperature Raman scattering from La_2CuO_4 is also measured. Strong features appear in the one-phonon spectrum at the frequencies of the longitudinal optical (LO) infrared modes which we suggest become Raman active through a Fröhlich-interaction.

cond-mat.supr-con↗