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T. van den Berg

Publications and source records attributed to T. van den Berg.

3 recordsLinked to original sources

A quantum-network approach to spin interferometry driven by Abelian and non-Abelian fields

We present a theory of conducting quantum networks that accounts for Abelian and non-Abelian fields acting on spin carriers. We apply this approach to model the conductance of mesoscopic spin interferometers of different geometry (such as squares and rings), reproducing recent experimental findings in nanostructured InAsGa quantum wells subject to Rashba spin-orbit and Zeeman fields (as, e.g., the manipulation of Aharonov-Casher interference patterns by geometric means). Moreover, by introducing an additional field-texture engineering, we manage to single out a previously unnoticed spin-phase suppression mechanism. We notice that our approach can also be used for the study of complex networks and the spectral properties of closed systems.

cond-mat.mes-hall

Wave-particle duality of electrons with spin-momentum locking

We investigate the effects of spin-momentum locking on the interference and diffraction patterns due to a double- or single-slit in an electronic \emph{Gedankenexperiment}. We show that the inclusion of the spin-degree-of-freedom, when coupled to the motion direction of the carrier -- a typical situation that occurs in systems with spin-orbit interaction -- leads to a modification of the interference and diffraction patterns that depend on the geometrical parameters of the system.

cond-mat.mes-hall

Single-charge occupation in ambipolar quantum dots

We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.

cond-mat.mes-hall