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Tae Jung Kim

Publications and source records attributed to Tae Jung Kim.

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Static Rashba Effect by Surface Reconstruction and Photon Recycling in the Dynamic Indirect Gap of APbBr3 (A = Cs, CH3NH3) Single Crystals

Recently, halide perovskites have gained significant attention from the perspective of efficient spintronics owing to Rashba effect. This effect occurs as a consequence of strong spin-orbit coupling under noncentrosymmetric environment, which can be dynamic and/or static. However, there exist intense debates on the origin of broken inversion symmetry since the halide perovskites typically crystallize into a centrosymmetric structure. In order to clarify the issue, we examine both dynamic and static effects in the all-inorganic CsPbBr3 and organic-inorganic CH3NH3PbBr3 (MAPbBr3) perovskite single crystals by employing temperature- and polarization-dependent photoluminescence excitation spectroscopy. The perovskite single crystals manifest the dynamic effect by photon recycling in the indirect Rashba gap, causing dual peaks in the photoluminescence. But the effect vanishes in CsPbBr3 at low temperatures (< 50 K), accompanied by a striking color change of the crystal, arising presumably from lower degrees of freedom for inversion symmetry breaking associated with the thermal motion of the spherical Cs cation, compared with the polar MA cation in MAPbBr3. We also show that static Rashba effect occurs only in MAPbBr3 below 90 K due to surface reconstruction via MA-cation ordering, which likely extends across a few layers from the crystal surface to the interior. We further demonstrate that this static Rashba effect can be completely suppressed upon surface treatment with poly methyl methacrylate (PMMA) coating. We believe that our results provide a rationale for the Rashba effects in halide perovskites.

physics.app-ph

Anisotropic Behavior of Excitons in Single Crystal α-SnS

We investigate analytically the anisotropic dielectric properties of single crystal α-SnS near the fundamental absorption edge by considering atomic orbitals. Most striking is the excitonic feature in the armchair- (b-) axis direction, which is particularly prominent at low temperatures. To determine the origin of this anisotropy, we perform first-principles calculations using the GW0 Bethe-Salpeter equation (BSE) including the electron-hole interaction. The results show that the anisotropic dielectric characteristics are a direct result of the natural anisotropy of p orbitals. In particular, this dominant excitonic feature originates from the py orbital at the saddle point in the Γ-Y region.

cond-mat.mtrl-sci

Optical Characterization of PtSi/Si by Spectroscopic Ellipsometry

We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on p-doped-silicon substrates by sputtering method and then rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interface. Pseudodielectric function data <ε> = <ε1> + i<ε2> of the PtSi/Si samples were obtained from 1.12 to 6.52 eV by using spectroscopic ellipsometry. Employing Tauc-Lorentz and Drude models, the dielectric function (ε) of PtSi films were determined. We found that the composition ratio of Pt:Si is nearly 1:1 for PtSi monolayer and we observed transitions between occupied and unoccupied states in Pt 5d states. We also observed formation of PtSi layers in Pt-Si multilayer sample. The SE results were confirmed by the transmission electron microscopy and energy dispersive X-ray spectroscopy.

cond-mat.mtrl-sci