arXiv subjects

Tae Won Noh

Publications and source records attributed to Tae Won Noh.

At least 37 records · Page 2Linked to original sources

arXiv2020

Two-channel anomalous Hall effect in SrRuO3

The Hall effect in SrRuO$_3$ thin-films near the thickness limit for ferromagnetism shows an extra peak in addition to the ordinary and anomalous Hall effects. This extra peak has been attributed to a topological Hall effect due to two-dimensional skyrmions in the film around the coercive field; however, the sign of the anomalous Hall effect in SrRuO$_3$ can change as a function of saturation magnetization. Here we report Hall peaks in SrRuO$_3$ in which volumetric magnetometry measurements and magnetic force microscopy indicate that the peaks result from the superposition of two anomalous Hall channels with opposite sign. These channels likely form due to thickness variations in SrRuO$_3$, creating two spatially separated magnetic regions with different saturation magnetizations and coercive fields. The results are central to the development of strongly correlated materials for spintronics.

cond-mat.str-el↗

arXiv2020

$\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and electronic structure of BaSnO$_3$ film

We studied surface and electronic structures of barium stannate (BaSnO$_3$) thin-film by low energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES) techniques. BaSnO$_3$/Ba$_{0.96}$La$_{0.04}$SnO$_3$/SrTiO$_3$ (10 nm/100 nm/0.5 mm) samples were grown using pulsed-laser deposition (PLD) method and were \emph{ex-situ} transferred from PLD chamber to ultra-high vacuum (UHV) chambers for annealing, LEED and ARPES studies. UHV annealing starting from 300$^{\circ}$C up to 550$^{\circ}$C, followed by LEED and ARPES measurements show 1$\times$1 surfaces with non-dispersive energy-momentum bands. The 1$\times$1 surface reconstructs into a $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ one at the annealing temperature of 700$^{\circ}$C where the ARPES data shows clear dispersive bands with valence band maximum located around 3.3 eV below Fermi level. While the $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction is stable under further UHV annealing, it is reversed to 1$\times$1 surface by annealing the sample in 400 mTorr oxygen at 600$^{\circ}$C. Another UHV annealing at 600$^{\circ}$C followed by LEED and ARPES measurements, suggests that LEED $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction and ARPES dispersive bands are reproduced. Our results provide a better picture of electronic structure of BaSnO$_3$ surface and are suggestive of role of oxygen vacancies in the reversible $\sqrt{2}$$\times$$\sqrt{2}R45^\circ$ surface reconstruction.

cond-mat.mtrl-sci↗

arXiv2019

Reflection anisotropy experiments to study non-equilibrium dynamics of electronic nematicity

Electronic nematicity have attracted a great deal of interest in the unconventional superconductivity research. We present an experimental method to investigate reflectivity anisotropy by the electronic nematicity and its non-equilibrium dynamics. Our experimental results on Ba(Fe$_{0.955}$Co$_{0.045}$)$_{2}$As$_{2}$ single crystal clearly feature the broken four-fold symmetry along directions parallel to Fe-Fe bonding. Numerical simulations using WVASE from Woollam Co. demonstrate that our method is highly reliable under various experimental conditions. Finally, we perform time-resolved reflectivity anisotropy measurement confirming that photo-excitation by 1.55 eV photons suppresses the reflectivity anisotropy due to nematic order.

physics.optics↗

arXiv2019

Ultrafast dynamics in the Lifshitz-type 5${d}$ pyrochlore antiferromagnet Cd$_{2}$Os$_{2}$O$_{7}$

We investigate the ultrafast dynamics of Cd$_2$Os$_2$O$_7$, a prototype material showing a Lifshitz-type transition as a function of temperature. In the paramagnetic metallic state, the photo-reflectivity shows a sub-picosecond relaxation, followed by a featureless small offset. In the antiferromagnetic state slightly below $T_N$, however, the photo-reflectivity resurges over hundreds of picoseconds, which goes beyond the usual realm of the effective-temperature model. Our observations are consistent with the Lifshitz phase transition of Cd$_2$Os$_2$O$_7$ driven by the evolution of the local magnetic moment.

cond-mat.str-el↗

arXiv2019

Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal

Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two dimensional (2D) SrRuO3 crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in SrRuO3 layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO3 unit cell layers induce a thermally-driven MIT along with a metamagnetic transition.

cond-mat.str-el↗

arXiv2019

Controllable thickness inhomogeneity and Berry-curvature-engineering of anomalous Hall effect in SrRuO3 ultrathin films

In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for determining and understanding topological properties. A prominent example is Hall anomalies observed in SrRuO3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect (THE) or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the AHE of SrRuO3 ultrathin films with controllable inhomogeneities in film thickness (tSRO). By harnessing the step-flow growth of SrRuO3 films, we induced microscopically-ordered stripes with one-unit-cell differences in tSRO. The resultant spatial distribution of momentum-space Berry curvatures enables a two-channel AHE, which shows hump-like anomalies similar to the THE and can be continuously engineered via sub-unit-cell control of tSRO. In these inhomogeneous SRO films, we microscopically identified a two-step magnetic switching and stripe-like ferromagnetic domains. These features are fingerprints for distinguishing the two-channel AHE from the skyrmion-induced THE.

cond-mat.mtrl-sci↗

arXiv2019

Evidence of structural evolution in Sr2RhO4 studied by time-resolved optical reflectivity spectroscopy

We investigate ultrafast dynamics from photoinduced reflectivity of Sr2RhO4 by using femtosecond near-infrared pulses. We observe a clear temperature-dependent anomaly in its electronic dynamics which slows down below 160 K. In addition, coherent oscillations of the A1g symmetric 5.3-THz phonon exhibit a 90-degree shift in its initial phase across TS, indicating a structural change in octahedral rotation distortions. We propose that octahedral structure in Sr2RhO4 evolves at around TS, and it can influence on the non-equilibrium dynamics of photoinduced carriers as well as real-time phonon responses.

cond-mat.str-el↗

arXiv2019

Revealing electrically undetectable room temperature surface-mobility of bulky topological insulators by spectroscopic techniques

High surface-mobility, which is attributable to topological protection, is a trademark of three-dimensional topological insulators (3DTIs). Exploiting surface-mobility indicates successful application of topological properties for practical purposes. However, the detection of the surface-mobility has been hindered by the inevitable bulk conduction. Even in the case of high-quality crystals, the bulk state forms the dominant channel of the electrical current. Therefore, with electrical transport measurement, the surface-mobility can be resolved only below-micrometer-thick crystals. The evaluation of the surface-mobility becomes more challenging at higher temperatures, where phonons can play a role. Here, using spectroscopic techniques, we successfully evaluated the surface-mobility of Bi2Te3 (BT) at room temperature (RT). We acquired the effective masses and mean scattering times for both the surface and bulk states using angle-resolved photoemission and terahertz time-domain spectroscopy. We revealed a record-high surface-mobility for BT, exceeding 33,000 cm^2/(Vs) per surface sheet, despite intrinsic limitations by the coexisting bulk state as well as phonons at RT. Our findings partially support the interesting conclusion that the topological protection persists at RT. Our approach could be applicable to other topological materials possessing multiband structures near the Fermi level.

cond-mat.mes-hall↗

arXiv2019

Enhanced flexoelectricity at reduced dimensions revealed by mechanically tunable quantum tunnelling

Flexoelectricity is a universal electromechanical coupling effect whereby all dielectric materials polarize in response to strain gradients. In particular, nanoscale flexoelectricity promises exotic phenomena and functions, but reliable characterization methods are required to unlock its potential. Here, we report anomalous mechanical control of quantum tunnelling that allows for characterizing nanoscale flexoelectricity. By applying strain gradients with an atomic force microscope tip, we systematically polarize an ultrathin film of otherwise nonpolar SrTiO$_{3}$, and simultaneously measure tunnel current across it. The measured tunnel current exhibits critical behaviour as a function of strain gradients, which manifests large modification of tunnel barrier profiles via flexoelectricity. Further analysis of this critical behaviour reveals significantly enhanced flexocoupling strength in ultrathin SrTiO$_{3}$, compared to that in bulk, rendering flexoelectricity more potent at the nanoscale. Our study not only suggests possible applications exploiting dynamic mechanical control of quantum effect, but also paves the way to characterize nanoscale flexoelectricity.

cond-mat.mtrl-sci↗

arXiv2018

Orbital-selective confinement effect of Ru $4d$ orbitals in SrRuO$_3$ ultrathin film

The electronic structure of SrRuO$_3$ thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru $4d$ orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition (MIT) occurring at the 4 u.c. sample. From these two clear observations we conclude that QCE gives rise to a Mott insulating phase in ultrathin SrRuO$_3$ films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO$_6$ clusters.

cond-mat.str-el↗

arXiv2018

Unconventional anomalous Hall effect from antiferromagnetic domain walls of Nd2Ir2O7 thin films

Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet (AFM) with non-coplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a non-coplanar AFM, Nd2Ir2O7. Bulk Nd2Ir2O7 has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the two-fold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong f-d exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic domain switching. Our epitaxial Nd2Ir2O7 thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our study highlights the symmetry broken interface of AFM materials as a new means of exploring topological effects and their relevant applications.

cond-mat.str-el↗

arXiv2017

Electronic characteristics of ultrathin SrRuO$_3$ films and their relationship with the metal$-$insulator transition

SrRuO$_3$ (SRO) films are known to exhibit insulating behavior as their thickness approaches four unit cells. We employ electron energy$-$loss (EEL) spectroscopy to probe the spatially resolved electronic structures of both insulating and conducting SRO to correlate them with the metal$-$insulator transition (MIT). Importantly, the central layer of the ultrathin insulating film exhibits distinct features from the metallic SRO. Moreover, EEL near edge spectra adjacent to the SrTiO$_3$ (STO) substrate or to the capping layer are remarkably similar to those of STO. The site$-$projected density of states based on density functional theory (DFT) partially reflects the characteristics of the spectra of these layers. These results may provide important information on the possible influence of STO on the electronic states of ultrathin SRO.

cond-mat.str-el↗

arXiv2017

Electronic Reconstruction Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic device applications. In the few-nanometer-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO3 films as a model system, we report an intrinsic tunneling conductance enhancement near the terrace edges. Scanning probe microscopy results demonstrate the existence of highly-conductive regions (tens of nanometers-wide) near the terrace edges. First-principles calculations suggest that the terrace edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling conductance enhancement can be discovered in other transition-metal-oxides and controlled by surface termination engineering. The controllable electronic reconstruction could facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases.

cond-mat.mtrl-sci↗

arXiv2017

Charge transfer in iridate-manganite superlattices

Charge transfer in superlattices consisting of SrIrO$_3$ and SrMnO$_3$ is investigated using density functional theory. Despite the nearly identical work function and non-polar interfaces between SrIrO$_3$ and SrMnO$_3$, rather large charge transfer was experimentally reported at the interface between them. Here, we report a microscopic model that captures the mechanism behind this phenomenon, providing a qualitative understanding of the experimental observation. This leads to unique strain dependence of such charge transfer in iridate-manganite superlattices. The predicted behavior is consistently verified by experiment with soft x-ray and optical spectroscopy. Our work thus demonstrates a new route to control electronic states in non-polar oxide heterostructures.

cond-mat.mtrl-sci↗

arXiv2017

Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implication in device applications. Here using a homoepitaxial strontium titanate thin film, we demonstrate a controlled manipulation of the oxygen vacancy distribution using the mechanical force from a scanning probe microscope tip. By combining Kelvin probe force microscopy imaging and phase-field simulations, we show that oxygen vacancies can move under a stress-gradient-induced depolarisation field. When tailored, this nanoscale flexoelectric effect enables a controlled spatial modulation. In motion, the scanning probe tip thereby deterministically reconfigures the spatial distribution of vacancies. The ability to locally manipulate oxygen vacancies on-demand provides a tool for the exploration of mesoscale quantum phenomena, and engineering multifunctional oxide devices.

cond-mat.str-el↗

arXiv2017

Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface

With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.

cond-mat.mtrl-sci↗

arXiv2017

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers

Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for non-volatile memories. Recently, significant enhancements of tunneling electroresistance (TER) have been realized through modifications of electrode materials. However, direct control of the FTJ performance through modifying the tunneling barrier has not been adequately explored. Here, adding a new direction to FTJ research, we fabricated FTJs with BaTiO3 single barriers (SB-FTJs) and BaTiO3/SrTiO3 composite barriers (CB-FTJs), and reported a systematic study of FTJ performances by varying the barrier thicknesses and compositions. For the SB-FTJs, the TER is limited by pronounced leakage current for ultrathin barriers and extremely small tunneling current for thick barriers. For the CB-FTJs, the extra SrTiO3 barrier provides an additional degree of freedom to modulate the barrier potential and tunneling behavior. The resultant high tunability can be utilized to overcome the barrier thickness limits and enhance the overall CB-FTJ performances beyond those of SB-FTJ. Our results reveal a new paradigm to manipulate the FTJs through designing multilayer tunneling barriers with hybrid functionalities.

cond-mat.mtrl-sci↗

arXiv2017

Element-Specific Orbital Character in a Nearly-Free-Electron Superconductor Ag$_5$Pb$_2$O$_6$ Revealed by Core-Level Photoemission

Ag$_5$Pb$_2$O$_6$ has attracted considerable attention due to its novel nearly-free-electron superconductivity, but its electronic structure and orbital character of the Cooper-pair electrons remain controversial. Here, we present a method utilizing core-level photoemission to show that Pb 6$s$ electrons dominate near the Fermi level. We observe a strongly asymmetric Pb 4$f_{7/2}$ core-level spectrum, while a Ag 3$d_{5/2}$ spectrum is well explained by two symmetric peaks. The asymmetry in the Pb 4$f_{7/2}$ spectrum originates from the local attractive interaction between conducting Pb 6$s$ electrons and a Pb 4$f_{7/2}$ core hole, which implies a dominant Pb 6$s$ contribution to the metallic conduction. In addition, the observed Pb 4$f_{7/2}$ spectrum is not explained by the well-known Doniach-Šunjić lineshape for a simple metal. The spectrum is successfully generated by employing a Pb 6$s$ partial density of states from local density approximation calculations, thus confirming the Pb 6$s$ dominant character and free-electron-like density of states of Ag$_5$Pb$_2$O$_6$.

cond-mat.supr-con↗