SearcharxivSearch

arXiv subjects

Tae Yun Kim

Publications and source records attributed to Tae Yun Kim.

10 recordsLinked to original sources

Electron-phonon physics at the exascale: A hybrid MPI-GPU-OpenMP framework for scalable Wannier interpolation

We demonstrate a highly efficient GPU implementation of the Wannier interpolation of electron-phonon matrix elements in the EPW code. Building on a systematic analysis of the computational complexity of the algorithm for electron-phonon interpolation, we designed a GPU porting strategy that integrates naturally into the current EPW implementation, and is seamlessly portable to NVIDIA, AMD, and Intel GPUs. We demonstrate this development via extensive benchmarks on conventional semiconductors such as silicon and monolayer MoS$_2$, as well as a large-scale application to topological stanene nanoribbons of width as large as 20nm, which was intractable with previous implementations. Compared to the single MPI parallelization scheme of EPW v5.9, the resulting hybrid MPI-GPU-OpenMP scheme achieves up to 29-fold speedup on leadership-class supercomputers equipped with NVIDIA and Intel accelerators, namely Vista at the Texas Advanced Computing Center, Perlmutter at the National Energy Research Scientific Computing Center, and Aurora at the Argonne Leadership Computing Facility. This framework also achieves nearly ideal scalability up to thousands of GPU nodes on the Aurora supercomputer. With this development, EPW is ready to support electron-phonon physics calculations on exascale platforms.

cond-mat.mtrl-sci

First-principles study of bulk stacking, $J_{\rm eff}$ picture, magnetic Hamiltonian, $g$ factors, and structural distortions of $α$-RuCl$_3$

$α$-RuCl$_3$ is a candidate Kitaev material that exhibits zigzag antiferromagnetic ordering below 7 K. One contentious issue regarding this material is its bulk structure in the low-temperature phase. Recently, it has become generally accepted from experiments that the low- and high-temperature structures belong to the $R\bar{3}$ and $C2/m$ space groups, respectively. However, there was no theoretical study supporting the $R\bar{3}$-type structure as the low-temperature structure. In this study, we use constrained density functional theory to show that the $R\bar{3}$ structure is lower in energy than the $C2/m$ structure, in agreement with experimental observations. Then, we show that the conduction band minimum states are almost of the $J_\textrm{eff}=1/2$ and $m_\textrm{eff}=-1/2$ character, if we set the angular momentum quantization axis to be parallel to the Néel vector; this is the first analysis of the $J_\textrm{eff}$ picture for $α$-RuCl$_3$ from this perspective. In addition, we compute the anisotropic magnetic exchange parameters and $g$ factors of monolayer $α$-RuCl$_3$, thereby providing a comprehensive understanding of its magnetism. Our results demonstrate that both second-nearest-neighbor exchange interactions and magnetic moments not captured by the conventional atomic orbital projection method are necessary for accurate description of the magnetism in $α$-RuCl$_3$. Moreover, the calculated $g$ factors are in fairly good agreement with experimental measurements, especially the small anisotropy between their in-plane and out-of-plane components. Finally, we examine the effects of structural distortions from a perfect RuCl$_6$ octahedron, already present in bulk $α$-RuCl$_3$ without any external perturbation, on the magnetic properties. (The abstract is cut here due to the word limit; see the pdf file for the full abstract.)

cond-mat.mtrl-sci

Magnetic anisotropy and magnetic ordering of transition-metal phosphorus trisulfides

Here, a magnetic model with an unprecedentedly large number of parameters was determined from first-principles calculations for transition-metal phosphorus trisulfides (TMPS$_3$'s), which reproduced the measured magnetic ground states of bulk TMPS$_3$'s. Our Monte Carlo simulations for the critical temperature, magnetic susceptibility, and specific heat of bulk and few-layer TMPS$_3$'s agree well with available experimental data and show that the antiferromagnetic order of FePS$_3$ and NiPS$_3$ persists down to monolayers. Remarkably, the orbital polarization, which was neglected in recent first-principles studies, dramatically enhances the magnetic anisotropy of FePS$_3$ by almost two orders of magnitude. A recent Raman study [K. Kim et al., Nat. Commun. 10, 345 (2019)] claimed that magnetic ordering is absent in monolayer NiPS$_3$ but simultaneously reported a strong two-magnon continuum; we show that the criterion used to judge magnetic ordering there is invalid in monolayer NiPS$_3$, thus providing an understanding of the two seemingly contradictory experimental results. The rich predictions on the magnetic susceptibility and specific heat of few-layer FePS$_3$ and NiPS$_3$ await immediate experimental verifications.

cond-mat.mtrl-sci

Suppression of magnetic ordering in XXZ-type antiferromagnetic monolayer NiPS3

How a certain ground state of complex physical systems emerges, especially in two-dimensional materials, is a fundamental question in condensed-matter physics. A particularly interesting case is systems belonging to the class of XY Hamiltonian where the magnetic order parameter of conventional nature is unstable in two-dimensional materials leading to a Berezinskii-Kosterlitz-Thouless transition. Here, we report how the XXZ-type antiferromagnetic order of a magnetic van der Waals material, NiPS3, behaves upon reducing the thickness and ultimately becomes unstable in the monolayer limit. Our experimental data are consistent with the findings based on renormalization group theory that at low temperatures a two-dimensional XXZ system behaves like a two-dimensional XY one, which cannot have a long-range order at finite temperatures. This work provides experimental examination of the XY magnetism in the atomically thin limit and opens new opportunities of exploiting these fundamental theorems of magnetism using magnetic van der Waals materials.

cond-mat.mes-hall

Bulk properties of van-der-Waals hard ferromagnet VI3

We present comprehensive measurements of the structural, magnetic and electronic properties of layered van-der-Waals ferromagnet VI$_3$ down to low temperatures. Despite belonging to a well studied family of transition metal trihalides, this material has received very little attention. We outline, from high-resolution powder x-ray diffraction measurements, a corrected room-temperature crystal structure to that previously proposed and uncover a structural transition at 79 K, also seen in the heat capacity. Magnetization measurements confirm VI$_3$ to be a hard ferromagnet (9.1 kOe coercive field at 2 K) with a high degree of anisotropy, and the pressure dependence of the magnetic properties provide evidence for the two-dimensional nature of the magnetic order. Optical and electrical transport measurements show this material to be an insulator with an optical band gap of 0.67 eV - the previous theoretical predictions of d-band metallicity then lead us to believe VI$_3$ to be a correlated Mott insulator. Our latest band structure calculations support this picture and show good agreement with the experimental data. We suggest VI$_3$ to host great potential in the thriving field of low-dimensional magnetism and functional materials, together with opportunities to study and make use of low-dimensional Mott physics.

cond-mat.str-el

Covalent-bonding-induced strong phonon scattering in the atomically thin WSe2 layer

In nano-device applications using 2D van der Waals materials, a heat dissipation through nano-scale interfaces can be a critical issue for optimizing device performances. By using a time-domain thermoreflectance measurement technique, we examine a cross-plane thermal transport through mono-layered (n=1) and bi-layered (n=2) WSe2 flakes which are sandwiched by top metal layers of Al, Au, and Ti and the bottom Al2O3 substrate. In these nanoscale structures with hetero- and homo-junctions, we observe that the thermal boundary resistance (TBR) is significantly enhanced as the number of WSe2 layers increases. In particular, as the metal is changed from Al, to Au, and to Ti, we find an interesting trend of TBR depending on the WSe2 thickness; when referenced to TBR for a system without WSe2, TBR for n=1 decreases, but that for n=2 increases. This result clearly demonstrates that the stronger bonding for Ti leads to a better thermal conduction between the metal and the WSe2 layer, but in return gives rise to a large mismatch in the phonon density of states between the first and second WSe2 layers so that the WSe2-WSe2 interface becomes a major thermal resistance for n=2. By using photoemission spectroscopy and optical second harmonic generation technique, we confirm that the metallization induces a change in the valence state of W-ions, and also recovers a non-centrosymmetry for the bi-layered WSe2.

cond-mat.mes-hall

Effects of spin-orbit coupling on the optical response of a material

We investigate the effects of spin-orbit coupling on the optical response of materials. In particular, we study the effects of the commutator between the spin-orbit coupling part of the potential and the position operator on the optical matrix elements. Using a formalism that separates a fullyrelativistic Kleinman-Bylander pseudopotential into the scalar-relativistic and spin-orbit-coupling parts, we calculate the contribution of the commutator arising from spin-orbit coupling to the squared optical matrix elements of isolated atoms, monolayer transition metal dichalcogenides, and topological insulators. In the case of isolated atoms from H ($Z = 1$) to Bi ($Z = 83$), the contribution of spin-orbit coupling to the squared matrix elements can be as large as 14 %. On the other hand, in the cases of monolayer transition metal dichalcogenides and topological insulators, we find that this contribution is less than 1 % and that it is sufficient to calculate the optical matrix elements and subsequent physical quantities without considering the commutator arising from spin-orbit coupling.

cond-mat.mtrl-sci

Charge-spin correlation in van der Waals antiferromagenet NiPS3

Strong charge-spin coupling is found in a layered transition-metal trichalcogenide NiPS3, a van derWaals antiferromagnet, from our study of the electronic structure using several experimental and theoretical tools: spectroscopic ellipsometry, x-ray absorption and photoemission spectroscopy, and density-functional calculations. NiPS3 displays an anomalous shift in the optical spectral weight at the magnetic ordering temperature, reflecting a strong coupling between the electronic and magnetic structures. X-ray absorption, photoemission and optical spectra support a self-doped ground state in NiPS3. Our work demonstrates that layered transition-metal trichalcogenide magnets are a useful candidate for the study of correlated-electron physics in two-dimensional magnetic material.

cond-mat.str-el

Ising-Type Magnetic Ordering in Atomically Thin FePS3

Magnetism in two-dimensional materials is not only of fundamental scientific interest but also a promising candidate for numerous applications. However, studies so far, especially the experimental ones, have been mostly limited to the magnetism arising from defects, vacancies, edges or chemical dopants which are all extrinsic effects. Here, we report on the observation of intrinsic antiferromagnetic ordering in the two-dimensional limit. By monitoring the Raman peaks that arise from zone folding due to antiferromagnetic ordering at the transition temperature, we demonstrate that FePS3 exhibits an Ising-type antiferromagnetic ordering down to the monolayer limit, in good agreement with the Onsager solution for two-dimensional order-disorder transition. The transition temperature remains almost independent of the thickness from bulk to the monolayer limit with TN ~118 K, indicating that the weak interlayer interaction has little effect on the antiferromagnetic ordering.

cond-mat.mes-hall

The electronic thermal conductivity of graphene

Graphene, as a semimetal with the largest known thermal conductivity, is an ideal system to study the interplay between electronic and lattice contributions to thermal transport. While the total electrical and thermal conductivity have been extensively investigated, a detailed first-principles study of its electronic thermal conductivity is still missing. Here, we first characterize the electron-phonon intrinsic contribution to the electronic thermal resistivity of graphene as a function of doping using electronic and phonon dispersions and electron-phonon couplings calculated from first principles at the level of density-functional theory and many-body perturbation theory (GW). Then, we include extrinsic electron-impurity scattering using low-temperature experimental estimates. Under these conditions, we find that the in-plane electronic thermal conductivity of doped graphene is ~300 W/mK at room temperature, independently of doping. This result is much larger than expected, and comparable to the total thermal conductivity of typical metals, contributing ~10 % to the total thermal conductivity of bulk graphene. Notably, in samples whose physical or domain sizes are of the order of few micrometers or smaller, the relative contribution coming from the electronic thermal conductivity is more important than in the bulk limit, since lattice thermal conductivity is much more sensitive to sample or grain size at these scales. Last, when electron-impurity scattering effects are included, we find that the electronic thermal conductivity is reduced by 30 to 70 %. We also find that the Wiedemann-Franz law is broadly satisfied at low and high temperatures, but with the largest deviations of 20-50 % around room temperature.

cond-mat.mtrl-sci