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Tae-Hyung Kim

Publications and source records attributed to Tae-Hyung Kim.

2 recordsLinked to original sources

Evaluating and Guarding Citation Faithfulness in Agentic Scientific Synthesis

Agentic LLM systems such as OpenScholar and PaperQA2 read the scientific literature and return cited answers, and both they and their benchmarks already check whether those citations hold, with a fixed attribution model or human graders. Neither audits the reliability of that check itself. We show it is not reliable, and that this matters. On identical agent outputs the measured unsupported-citation rate ranges from about 3% to about 18% depending only on the verifier's strictness, and although verifiers agree on which citations are supported, they disagree on which to flag (negative-specific agreement 0.27 to 0.30), so no single flag set is trustworthy and cross-paper comparison is invalid without a named verifier and protocol. We present a gold-anchored evaluation protocol and a deployable guard that make this behavior measurable and bounded. The protocol validates the verifier, measures re-attribution, and calibrates a guarantee against human gold rather than another model's verdict; the verifier is a swappable instrument chosen on cost (recall 0.94 on the supported class, held out), and re-attribution is a commodity step where a deterministic BM25 matches the best open generator. The guard adds a split-conformal layer placing a distribution-free, finite-sample bound on truly unsupported citations that slip past a chosen flagging rule, a guarantee on catch rate rather than conclusion correctness. The bound holds on held-out gold, and we identify and quantify the condition governing its transfer to deployment, calibration-negative difficulty, with a concrete recalibration recipe, left untested by prior conformal-factuality work. Validated across four open 27-35B models and three agentic pipelines on public benchmarks (SciFact, QASA, PubMedQA), with confidence intervals on every headline number, the protocol and guard ship as an open single-GPU kit.

cs.AI

Genuine Ohmic van der Waals contact between indium and MoS2

The formation of an ideal van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces is a critical step for the development of high-performance and energy-efficient electronic and optoelectronic applications based on the two-dimensional (2D) semiconductors. In overcoming the key chal-lenges of the conventional metal deposition process that leads to an uncontrol-lable Schottky barrier height and high contact resistance, notable advances were recently made by transferring atomically flat metal thin films or thermally evapo-rating indium/gold alloy. However, the realization of an ideal vdW contact be-tween an elemental metal and TMDC through the evaporation process is yet to be demonstrated, and particularly the evidence of an Ohmic contact between three-dimensional metallic electrodes and TMDCs is still unavailable. Herein, we report the fabrication of atomically clean metal/TMDC contacts by evaporating metals at a relatively low thermal energy and subsequently cooling the substrate holder down to 100 K by liquid nitrogen, achieving for the indium (In)/molybdenum disulfide (MoS2) case an accumulation-type Ohmic contact with a metal-induced electron doping density of 10$^{12}$/cm$^2$. We find that the transport at the In/MoS2 contact is dominated by the field-emission mechanism over a wide temperature range from 2.4 to 300 K, and the contact resistance reaches 600 Ohm um and 1,000 Ohm um at cryogenic temperatures for the few-layer and monolayer MoS2 cases, respectively. Based on first-principles calculations, we find that the na-ture of the ideal In/MoS2 vdW contact is characterized by the formation of in-gap states within TMDC together with the abrupt and rigid shift of the TMDC band.

cond-mat.mes-hall