arXiv subjects

Taizo Shibuya

Publications and source records attributed to Taizo Shibuya.

5 recordsLinked to original sources

arXiv2025

Boron Clusters for Metal-Free Water Splitting

Electron-deficient boron clusters are identified as a fundamentally new class of oxygen evolution reaction (OER) catalysts, entirely free of transition metals. Selective sodium extraction from NaAlB14 and Na2B29 via high-pressure diffusion control introduces hole doping into B12 icosahedral frameworks, resulting in OER activity exceeding that of Co3O4 by more than an order of magnitude, and exceptional durability under alkaline conditions. B12 clusters are known for their superchaotropic character, which destabilizes hydrogen bonding in water. In this system, H2O, instead of OH-, preferentially adsorbs on the catalyst surface, suggesting a distinct OER pathway mediated by molecular water. This adsorption behavior contrasts with conventional transition-metal oxides and reflects the unique interfacial properties of the boron clusters. Density functional theory reveals unoccupied p orbitals and unique local electric fields at the cluster surface, both of which could promote the water activation. These findings suggest a paradigm shift in OER catalysis, in which the unique interaction between B12 clusters and water drives the reaction, replacing the conventional role of redox-active metals. Hole-doped boron clusters thus offer a promising platform for designing high-performance and durable water-splitting catalysts, opening new avenues for OER design beyond conventional transition-metal chemistry.

cond-mat.mtrl-sci↗

arXiv2018

Superconducting transition temperatures in the electronic and magnetic phase diagrams of Sr2VFeAsO3-delta, a superconductor

We elucidate the magnetic phases and superconducting transition temperatures (Tc) in Sr2VFeAsO3-delta (21113V), an iron-based superconductor with a thick-blocking layer fabricated from a perovskite-related transition metal oxide. At low temperatures (T < 37.1 K), 21113V exhibited a superconducting phase in the range 0.031 =< delta =< 0.145 and an antiferromagnetic (AFM) iron sublattice in the range 0.267 =< delta =< 0.664. Mixed-valent vanadium exhibited a dominant AFM phase in 0.031 =< delta =< 0.088, and a partial ferrimagnetic (Ferri.) phase in the range 0.124 =< delta =< 0.664. The Ferri. phase was the most dominant at a delta value of 0.267, showing an AFM phase of Fe at T < 20 K. Increasing the spontaneous magnetic moments reduced the magnetic shielding volume fraction due to the superconducting phase. This result was attributed to the magnetic phase of vanadium, which dominates the superconductivity of Fe in 21113V. The Tc-delta curve showed two maxima. The smaller and larger of Tc maxima occurred at delta = 0.073 and delta = 0.145, respectively; the latter resides on the phase boundary between AFM and the partial Ferri. phases of vanadium. 21113V is a useful platform for verifing new mechanisms of Tc enhancement in iron-based superconductors.

cond-mat.supr-con↗

arXiv2016

Suppression of lattice thermal conductivity by mass-conserving cation mutation in multi-component semiconductors

In semiconductors almost all heat is conducted by phonons (lattice vibrations), which is limited by their quasi-particle lifetimes. Phonon-phonon interactions represent scattering mechanisms that produce thermal resistance. In thermoelectric materials, this resistance due to anharmonicity should be maximised for optimal performance. We use a first-principles lattice-dynamics approach to explore the changes in lattice dynamics across an isostructural series where the average atomic mass is conserved: ZnS to CuGaS$_2$ to Cu$_2$ZnGeS$_4$. Our results demonstrate an enhancement of phonon interactions in the multernary materials, and confirm that lattice thermal conductivity can be controlled independently of the average mass and local coordination environments.

cond-mat.mtrl-sci↗

arXiv2014

The effect of simultaneous substitution on the electronic band structure and thermoelectric properties of Se-doped Co3SnInS2 with the Kagome lattice

The thermoelectric properties and electronic band structures for Se-doped Co3SnInS2 were examined. The parent compound of this material (Co3Sn2S2) has two kinds of Sn sites (Sn1 and Sn2 sites). The density functional theory (DFT) calculations show that the indium substitution at the Sn2 site induces a metallic band structure, on the other hand, a semiconducting band structure is obtained from substitution at the Sn1 site. However, according to the previous reports, since the indium atom prefers to replace the tin atom at the Sn1 site rather than the Sn2 site, the resistivity of Co3SnInS2 shows semiconducting-like behavior. In this study we have demonstrated that metallic behavior and a decrease in resistivity for Se-doped Co3SnInS2 occurs without suppression of the Seebeck coefficient. From the DFT calculations, when the selenium content is above 0.5, the total crystallographic energy shows that a higher indium occupancy at Sn2 site is more stable. Therefore, it is suggested that the selenium doping suppress the site preference for indium substitution. This is one of the possible explanations for the metallic conductivity observed in Se-doped Co3SnInS2

cond-mat.mtrl-sci↗

arXiv2014

Effects of the Cu off-stoichiometry on transport properties of wide gap p-type semiconductor, layered oxysulfide LaCuSO

Layered oxysulfide LaCuSO (x = 0-0.03) was prepared to elucidate the effect of Cu off-stoichiometry on their electrical and thermal transport properties. Electrical resistivity drastically decreases down from ~10^5 ohmcm to ~10^-1 ohmcm as a result of Cu deficiency (x = 0.01) at 300 K. Thermal conductivity of the samples at 300 K, which is dominated by lattice components, is estimated to be 2.3(3) Wm^-1K^-1. Stoichiometric LaCuSO has an optical band gap of 3.1 eV, while broad optical absorption at photon energies of approximately 2.1 eV was observed for Cu-deficient samples. Density functional theory calculation suggests that these broad absorption structures probably originate from the in-gap states generated by the sulfur vacancies created to compensate the charge imbalance due to Cu off-stoichiometry. These results clearly demonstrate that Cu deficiency plays a crucial role in determining the electrical transport properties of Cu-based p-type transparent semiconductors.

cond-mat.mtrl-sci↗