arXiv subjects

Takafumi Akiho

Publications and source records attributed to Takafumi Akiho.

At least 19 recordsLinked to original sources

arXiv2026

Dispersive detection of a charge qubit with a broadband high-impedance quantum-Hall plasmon resonator

Cavity quantum electrodynamics (cQED) provides strong light-matter interactions that can be used for manipulating and detecting quantum states. The interaction can be enhanced by increasing the resonator's impedance, while approaching the quantum impedance ($h/e^2$) remains challenging. Edge plasmons emergent as chiral bosonic modes in the quantum Hall channels provide high quantized impedance of $h/ νe^2$ that can exceed 10 k$Ω$ for the Landau-level filling factor $ν\leq 2$, well beyond the impedance of free space. Here, we apply such a high-impedance plasmon mode in a quantum-Hall plasmon resonator to demonstrate dispersive detection of a nearby charge qubit formed in a double quantum dot. The phase shift in microwave transmission through the plasmon resonator follows the dispersive shift associated with the qubit state in agreement with the cQED theory. The high impedance allows us to perform dispersive detection of qubit spectroscopy with a plasmon resonator having a broad bandwidth. Leveraging these topological edge modes, our results establish two-dimensional topological insulators as a new platform of cQED.

cond-mat.mes-hall↗

arXiv2025

Efficient heat-energy conversion from a non-thermal Tomonaga-Luttinger liquid

Energy harvesting is a technique that generates useful work from waste heat. Conventional energy harvesters acting on local thermal equilibrium states are constrained by thermodynamic limits, such as the Carnot efficiency. Quantum heat engines with non-thermal reservoirs are expected to exceed such limits. Here, we demonstrate energy harvesting from a nonthermal Tomonaga-Luttinger (TL) liquid in quantum Hall edge channels, where the non-thermal state is naturally formed due to the absence of thermalization. The scheme is tested with a quantum-dot energy harvester working on a non-thermal TL liquid supplied with waste heat from a quantum-point-contact transistor. Compared to the quasi-thermalized TL liquid, the non-thermal state prepared under the same heat is capable of a larger electromotive force and higher conversion efficiency. These characteristics can be understood by considering a binary Fermi distribution function of the non-thermal state induced by entropy-conserving equilibration. TL liquids are attractive non-thermal carriers for excellent energy harvesting.

cond-mat.mes-hall↗

arXiv2025

Effects of GaAs Buffer Layer on Structural, Magnetic, and Transport Properties of Magnetic Topological Insulators Cr$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ and V$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ Films

Here, we study the effects of a GaAs buffer layer on the structural, magnetic, and transport properties of Cr$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$ magnetic topological insulator thin films and compare them with those of V$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$, which we recently reported. Similar to the case of V$_y$(Bi$_x$Sb$_{1-x}$)$_{2-y}$Te$_3$, growth on a GaAs buffer layer leads to some distinctly different properties than direct growth on InP substrates. These include improved interface quality confirmed by transmission electron microscopy, enhanced magnetic coercive fields, and smaller resistivity peaks at the magnetization reversals. Furthermore, the Bi-ratio dependence of the carrier density reveals that the interface property also affects the Fermi level. These results demonstrate the importance of the buffer layer in controlling the electronic properties of the magnetic topological insulator films.

cond-mat.mes-hall↗

arXiv2024

Coulomb oscillations of a quantum antidot formed by an airbridged pillar gate in the integer and fractional quantum Hall regime

Quantum antidots (QAD) are attractive for manipulating quasiparticles in quantum Hall (QH) systems. Here, we form a QAD in the integer and fractional QH regimes at nominal Landau-level filling factor $ν$ = 2, 1, and 2/3 using a submicron pillar gate with an airbridge connection. After confirming the required conditions for a fully depleted QAD, we analyze the observed Coulomb oscillations in terms of the area of the QAD and the effective charge for the oscillation period in an identical gate voltage range. The area at $ν$ = 2/3 is significantly smaller than that at $ν$ = 2 and 1, in qualitative agreement with the previous report. By assuming a constant gate capacitance, the effective charge at $ν$ = 2/3 is about 2/3 of that at $ν$ = 2 and 1. The QAD device can be used to capture and emit charges in the unit of 2e/3.

cond-mat.mes-hall↗

arXiv2024

Static quantum dot on a potential hilltop for generating and analyzing hot electrons in the quantum Hall regime

We propose and demonstrate a static quantum dot on a potential hilltop to generate and analyze ballistic hot electrons along a quantum Hall edge channel well above the chemical potential. High energy resolution associated with discrete energy levels is attractive for studying hot-electron dynamics. Particularly, the energy distribution function of hot electrons weakly coupled to cold electrons is investigated to reveal spectral diffusion with energy relaxation. The analysis allows us to estimate the maximum energy exchange per scattering, which is an important parameter to describe interacting electrons in the edge channel.

cond-mat.mes-hall↗

arXiv2024

Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge

We have fabricated a superconductor/semiconductor (S/Sm) junction composed of Al and InAs using cleaved edge overgrowth. By exploiting the unique geometry with a thin Al/Pt/Al trilayer formed on the side surface of an in-situ cleaved heterostructure wafer containing an InAs quantum well, we achieve a superconducting critical field of 5 T, allowing superconductivity and quantum Hall (QH) effects to coexist down to Landau-level filling factor nu = 3. Andreev reflection at zero magnetic field shows a conductance enhancement that is limited solely by the Fermi velocity mismatch, demonstrating a virtually barrier-free, high-quality S/Sm junction. Bias spectroscopy in the QH regime reveals the opening of a superconducting gap, with the reduced downstream resistance demonstrating that the electron-hole Andreev conversion probability consistently exceeds 50%. Our results, obtained in a new experimental regime characterized by a clean edge-contacted junction with a superconducting electrode narrower than the coherence length, open new avenues for both theoretical and experimental studies of the interplay between superconductivity and QH effects and the engineering of exotic quasiparticles.

cond-mat.mes-hall↗

arXiv2024

Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3

We report the growth, structural characterization, and transport properties of the quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3 (VBST) grown on a GaAs buffer layer by molecular beam epitaxy on a GaAs(111)A substrate. X-ray diffraction and transmission electron microscopy show that the implementation of a GaAs buffer layer improves the crystal and interface quality compared to the control sample grown directly on an InP substrate. Both samples exhibit the quantum anomalous Hall effect (QAHE), but with similar thermal stability despite the different structural properties. Notably, the QAHE in the sample grown on a GaAs buffer layer displays a significantly larger (almost double) coercive field with a much smaller resistivity peak at the magnetization reversal. Possible effects of the interface quality on the magnetic properties of VBST and the QAHE are discussed.

cond-mat.mtrl-sci↗

arXiv2024

Resonant plasmon-assisted tunneling in a double quantum dot coupled to a quantum-Hall plasmon resonator

Edge magnetoplasmon is an emergent chiral bosonic mode promising for studying electronic quantum optics. While the plasmon transport has been investigated with various techniques for decades,its coupling to a mesoscopic device remained unexplored. Here, we demonstrate the coupling between a single plasmon mode in a quantum Hall plasmon resonator and a double quantum dot (DQD). Resonant plasmon-assisted tunneling is observed in the DQD through absorbing or emitting plasmons stored in the resonator. By using the DQD as a spectrometer, the plasmon energy and the coupling strength are evaluated, which can be controlled by changing the electrostatic environment of the quantum Hall edge. The observed plasmon-electron coupling encourages us for studying strong coupling regimes of plasmonic cavity quantum electrodynamics.

cond-mat.mes-hall↗

arXiv2023

Tunable tunnel coupling in a double quantum antidot with cotunneling via localized state

Controlling tunnel coupling between quantum antidots (QADs) in the quantum Hall (QH) regime is problematic. We propose and demonstrate a scheme for tunable tunnel coupling between two QADs by utilizing a cotunneling process via a localized state as a third QAD. The effective tunnel coupling can be tuned by changing the localized level even with constant nearest-neighbor tunnel couplings. We systematically study the variation of transport characteristics in the effectively triple QAD system at the Landau level filling factor $ν=2$. The tunable tunnel coupling is clarified by analyzing the anti-crossing of Coulomb blockade peaks in the charge stability diagram, in agreement with numerical simulations based on the master equation. The scheme is attractive for studying coherence and interaction in QH systems.

cond-mat.mes-hall↗

arXiv2023

Non-thermal Tomonaga-Luttinger liquid eventually emerging from hot electrons in the quantum Hall regime

Dynamics of integrable systems, such as Tomonaga-Luttinger (TL) liquids, is deterministic, and the absence of stochastic thermalization processes provides unique characteristics, such as long-lived non-thermal metastable states with many conserved quantities. Here, we show such non-thermal states can emerge even when the TL liquid is excited with extremely high-energy hot electrons in chiral quantum-Hall edge channels. This demonstrates the robustness of the integrable model against the excitation energy. Crossover from the single-particle hot electrons to the many-body TL liquid is investigated by using on-chip detectors with a quantum point contact and a quantum dot. The charge dynamics can be understood with a single-particle picture only for hot electrons. The resulting electron-hole plasma in the TL liquid shows a non-thermal metastable state, in which warm and cold electrons coexist without further thermalization. The multi-temperature constituents are attractive for transporting information with conserved quantities along the channels.

cond-mat.mes-hall↗

arXiv2022

Coherent-Incoherent Crossover of Charge and Neutral Mode Transport as Evidence for the Disorder-Dominated Fractional Edge Phase

Couplings between topological edge channels open electronic phases possessing nontrivial eigenmodes far beyond the noninteracting-edge picture. However, inelastic scatterings mask the eigenmodes' inherent features, often preventing us from identifying the phases, as is the case for the quintessential Landau-level filling factor v = 2/3 edge composed of the counter-propagating v = 1/3 and 1 (1/3-1) channels. Here, we study the coherent-incoherent crossover of the 1/3-1 channels by tuning the channel length in-situ using a new device architecture comprising a junction of v = 1/3 and 1 systems, the particle-hole conjugate of the 2/3 edge. We successfully observed the concurrence of the fluctuating electrical conductance and the quantized thermal conductance in the crossover regime, the definitive hallmark of the eigenmodes in the disorder-dominated edge phase left experimentally unverified.

cond-mat.mes-hall↗

arXiv2022

Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier

We developed a high-speed and low-noise time-domain current measurement scheme using a homemade GaAs high-electron-mobility-transistor-based cryogenic transimpedance amplifier (TIA). The scheme is versatile for broad cryogenic current measurements, including semiconductor spin-qubit readout, owing to the TIA's having low input impedance comparable to that of commercial room-temperature TIAs. The TIA has a broad frequency bandwidth and a low noise floor, with a trade-off between them governed by the feedback resistance $R_{FB}$. A lower $R_{FB}$ of 50 k$Ω$ enables high-speed current measurement with a -3dB cutoff frequency $f_{-3dB}$ = 28 MHz and noise-floor $NF = 8.5 \times 10^{-27}$ A$^{2}$/Hz, while a larger $R_{FB}$ of 400 k$Ω$ provides low-noise measurement with $NF = 1.0 \times 10^{-27}$ A$^{2}$/Hz and $f_{-3dB}$ = 4.5 MHz. Time-domain measurement of a 2-nA peak-to-peak square wave, which mimics the output of the standard spin-qubit readout technique via charge sensing, demonstrates a signal-to-noise ratio (SNR) of 12.7, with the time resolution of 48 ns, for $R_{FB}$ = 200 k$Ω$, which compares favorably with the best-reported values for the radio-frequency (RF) reflectometry technique. The time resolution can be further improved at the cost of the SNR (or vice versa) by using an even smaller (larger) $R_{FB}$, with a further reduction in the noise figure possible by limiting the frequency band with a low-pass filter. Our scheme is best suited for readout electronics for cryogenic sensors that require a high time resolution and current sensitivity and thus provides a solution for various fundamental research and industrial applications.

cond-mat.mes-hall↗

arXiv2022

Non-uniform heat redistribution among multiple channels in the integer quantum Hall regime

Heat transport in multiple quantum-Hall edge channels at Landau-level filling factor nu = 2, 4, and 8 is investigated with a quantum point contact as a heat generator and a quantum dot as a local thermometer. Heat distribution among the channels remains highly non-uniform, which can be understood with the plasmon eigenmodes of the multiple channels. The heat transport can be controlled with another quantum point contact as a quantized heat valve, as manifested by stepwise increases of heat current at the thermometer. This encourages developing integrated heat circuits with quantum-Hall edge channels.

cond-mat.mes-hall↗

arXiv2021

Time-resolved investigation of plasmon mode along interface channels in integer and fractional quantum Hall regimes

Quantum Hall (QH) edge channels appear not only along the edge of the electron gas but also along an interface between two QH regions with different filling factors. However, the fundamental transport characteristics of such interface channels are not well understood, particularly in the high-frequency regime. In this study, we investigate the interface plasmon mode along the edge of a metal gate electrode with ungated and gated QH regions in both integer and fractional QH regimes using a time-resolved measurement scheme. The observed plasmon waveform was delayed and broadened due to the influence of the charge puddles formed around the channel. The charge velocity and diffusion constant of the plasmon mode were evaluated by analyzing the waveform using a distributed circuit model. We found that the conductive puddles in the gated region induce significant dissipation in plasmon transport. For instance, a fractional interface channel with a reasonably fast velocity was obtained by preparing a fractional state in the ungated region and an integer state in the gated region, whereas a channel in the swapped configuration was quite dissipative. This reveals a high-quality interface channel that provides a clean path to transport fractional charges for studying various fractional QH phenomena.

cond-mat.mes-hall↗

arXiv2021

Andreev reflection of fractional quantum Hall quasiparticles

Electron correlation in a quantum many-body state appears as peculiar scattering behaviour at its boundary, symbolic of which is Andreev reflection at a metal-superconductor interface. Despite being fundamental in nature, dictated by the charge conservation law, however, the process has had no analogues outside the realm of superconductivity so far. Here, we report the observation of an Andreev-like process originating from a topological quantum many-body effect instead of superconductivity. A narrow junction between fractional and integer quantum Hall states shows a two-terminal conductance exceeding that of the constituent fractional state. This remarkable behaviour, while theoretically predicted more than two decades ago but not detected to date, can be interpreted as Andreev reflection of fractionally charged quasiparticles. The observed fractional quantum Hall Andreev reflection provides a fundamental picture that captures microscopic charge dynamics at the boundaries of topological quantum many-body states.

cond-mat.mes-hall↗

arXiv2021

Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT leads to a lower noise floor in the experimental setup and enables more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.

cond-mat.mes-hall↗

arXiv2021

Screening effects of superlattice doping on the mobility of GaAs two-dimensional electron system revealed by in-situ gate control

We investigate the screening effects of excess electrons in the doped layer on the mobility of a GaAs two-dimensional electron system (2DES) with a modern architecture using short-period superlattice (SL) doping. By controlling the density of excess electrons in the SL with a top gate while keeping the 2DES density constant with a back gate, we are able to compare 2DESs with the same density but different degrees of screening using one sample. Using a field-penetration technique and circuit-model analysis, we determine the density of states and excess electron density in the SL, quantities directly linked to the screening capability. The obtained relation between mobility and excess electron density is consistent with the theory taking into account the screening by the excess electrons in the SL. The quantum lifetime determined from Shubnikov-de Haas oscillations is much lower than expected from theory and did not show a discernible change with excess electron density.

cond-mat.mes-hall↗

arXiv2020

Quantized charge fractionalization at quantum Hall Y junctions in the disorder-dominated regime

Fractionalization is a phenomenon where an elementary excitation partitions into several pieces. This picture explains non-trivial transport through a junction of one-dimensional edge channels defined by topologically distinct quantum Hall states, for example, a hole-conjugate state at Landau-level filling factor $ν$ = 2/3. Here we employ a time-resolved scheme to identify an elementary fractionalization process; injection of charge q from a non-interaction region into an interacting and scattering region of one-dimensional channels results in the formation of a collective excitation with charge $(1-\textit{r})\textit{q}$ by reflecting fractionalized charge $\textit{rq}$. The fractionalization factors, $\textit{r}$ = 0.34$\pm$0.03 for $ν$ = 2/3 and $\textit{r}$ = 0.49$\pm$0.03 for $ν$ = 2, are consistent with the quantized values of 1/3 and 1/2, respectively, which are expected in the disorder dominated regime. The scheme can be used for generating and transporting fractionalized charges with a well-defined time course along a well-defined path.

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