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Takafumi Hatano

Publications and source records attributed to Takafumi Hatano.

15 recordsLinked to original sources

Freestanding GdBa2Cu3O7 Thin Films via Optimized Buffer Layer Design: Preserving Superconducting Properties

Freestanding GdBa2Cu3O7 (GdBCO) superconducting thin films were fabricated using a water-soluble Sr3Al2O6 (SAO) sacrificial layer in combination with thermal release tape. An amorphous Al2O3 capping layer was introduced to suppress crack formation during the lift-off process. The influence of buffer-layer design inserted between the GdBCO and SAO layers was systematically investigated with respect to structural integrity and superconducting properties after lift-off. A LaAlO3/SrTiO3 bilayer buffer was found to be essential for maintaining epitaxial growth and a superconducting transition temperature (Tc) of approximately 92 K after lift-off, comparable to that of the as-grown films. In contrast, a reversed SrTiO3/LaAlO3 bilayer and single-layer buffer structures led to a suppression of Tc, highlighting the critical role of stacking sequence. These results demonstrate that optimization of the buffer-layer design is a key factor for realizing high-quality freestanding GdBCO films while maintaining their superconducting characteristics.

cond-mat.supr-con↗

Structural analysis and transport properties of [010]-tilt grain boundaries in Fe(Se,Te)

Understanding the nature of grain boundaries is a prerequisite for fabricating high-performance superconducting bulks and wires. For iron-based superconductors [e.g. Ba(Fe,Co)$_2$As$_2$, Fe(Se,Te), and NdFeAs(O,F)], the dependence of the critical current density $J_\mathrm{c}$ on misorientation angle ($θ_\mathrm{GB}$) has been explored on [001]-tilt grain boundaries, but no data for other types of orientations have been reported. Here, we report on the structural and transport properties of Fe(Se,Te) grown on CeO$_2$-buffered symmetric [010]-tilt roof-type SrTiO$_3$ bicrystal substrates by pulsed laser deposition. X-ray diffraction and transmission electron microscopy revealed that $θ_\mathrm{GB}$ of Fe(Se,Te) was smaller whereas $θ_\mathrm{GB}$ of CeO$_2$ was larger than that of the substrate. The difference in $θ_\mathrm{GB}$ between the CeO$_2$ buffer layer and the substrate is getting larger with increasing $θ_\mathrm{GB}$. For $θ_\mathrm{GB}\geq24^\circ$ of the substrates, $θ_\mathrm{GB}$ of Fe(Se,Te) was zero, whereas $θ_\mathrm{GB}$ of CeO$_2$ was continuously increasing. The inclined growth of CeO$_2$ can be explained by the geometrical coherency model. The $c$-axis growth of Fe(Se,Te) for $θ_\mathrm{GB}\geq24^\circ$ of the substrates is due to the domain matching epitaxy on (221) planes of CeO$_2$. Electrical transport measurements confirmed no reduction of inter-grain $J_\mathrm{c}$ for $θ_\mathrm{GB}\leq9^\circ$, indicative of strong coupling between the grains.

cond-mat.supr-con↗

Theory of Josephson current on a lattice model of grain boundary in $d$-wave superconductors

Identifying the origins of suppression of the critical current at grain boundaries of high-critical-temperature superconductors, such as cuprates and iron-based superconductors, is a crucial issue to be solved for future applications with polycrystalline materials. Although the dominant factor of current suppression might arise during material fabrication and/or processing, investigating it due to an internal phase change of the pair potential is an important issue in understanding the threshold of the critical current. In this paper, we study the Josephson current on a symmetric [001]-tilt grain boundary (GB) of a $d$-wave superconductor on a lattice model. In addition to the suppression of the maximum Josephson current associated with the internal phase change of the $d$-wave pair potential which has been predicted in continuum models, we find a unique phase interference effect due to folding of the Fermi surface in the lattice model. In particular, the resultant maximum Josephson current at low-tilting-angle regions tends to be suppressed more than that in preexisting theories. Because similar suppressions of the critical current at GBs have been reported in several experimental works, the present model can serve as a guide to clarify the complicated transport mechanism in GBs.

cond-mat.supr-con↗

Nanoscale Texture and Microstructure in NdFeAs(O,F)/IBAD-MgO Superconducting Thin Film with Superior Critical Current Properties

This paper reports the nanoscale texture and microstructure of a high-performance NdFeAs(O,F) superconducting thin film grown by molecular beam epitaxy on a textured MgO/Y$_2$O$_3$/Hastelloy substrate. The NdFeAs(O,F) film forms a highly textured columnar grain structure by epitaxial growth on the MgO template. Although the film contains stacking faults along the $ab$-plane as well as grain boundaries perpendicular to the $ab$-plane, good superconducting properties are measured: a critical temperature, $T _{\rm c}$, of 46 K and a self-field critical current density, $J_{\rm c}$, of $2 \times 10^6 \,{\rm A/cm^2}$ at 4.2 K. Automated crystal orientation mapping by scanning precession electron diffraction in transmission electron microscopy is employed to analyze the misorientation angles between adjacent grains in a large ensemble (247 grains). 99% of the grain boundaries show in-plane misorientation angles ($Δγ$) less than the critical angle $θ_{\rm c}$, which satisfies one of the necessary conditions for the high $J_{\rm c}$. Comparing the columnar grain size distribution with the mean distance of the flux line lattice, the triple junctions of low-angle grain boundaries are found to be effective pinning centers, even at high temperatures ($\ge$35 K) and/or low magnetic fields.

cond-mat.supr-con↗

Approaching the ultimate superconducting properties of (Ba,K)Fe2As2 by naturally formed low-angle grain boundary networks

The most effective way to enhance the dissipation-free supercurrent in presence of magnetic field for type II superconductors is the introduction of defects that acts as artificial pinning centres (APCs) for the vortices. For instance, the in-field critical current density of doped BaFe2As2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last decade by APCs created by ion-irradiation. The technique of ion-irradiation has been commonly implemented to determine the ultimate superconducting properties. However, this method is rather complicated and expensive. Here, we report on a surprisingly high critical current density and strong pinning efficiency close to the crystallographic c-axis for a K-doped Ba122 epitaxial thin film without APCs, achieving performance comparable to ion-irradiated K-doped Ba122 single crystals. Microstructural analysis reveals that the film is composed of columnar grains having width around 30-60 nm. The grains are rotated around the b- (or a-) axis by 1.5 degree and around the c-axis by -1 degree, resulting in the formation of low-angle grain boundary networks. This study demonstrates that the upper limit of in-field properties reached in ion-irradiated K-doped Ba122 is achievable by grain boundary engineering, which is a simple and industrially scalable manner.

cond-mat.supr-con↗

High $J_{\rm c}$ and low anisotropy of hydrogen doped NdFeAsO superconducting thin film

The recent realisations of hydrogen doped $Ln$FeAsO ($Ln$=Nd and Sm) superconducting epitaxial thin films call for further investigation of their structural and electrical transport properties. Here, we report on the microstructure of a NdFeAs(O,H) epitaxial thin film and its temperature, field, and orientation dependencies of the resistivity and the critical current density $J_{\rm c}$. The superconducting transition temperature $T_{\rm c}$ is comparable to NdFeAs(O,F). Transmission electron microscopy investigation supported that hydrogen is homogenously substituted for oxygen. A high self-field $J_{\rm c}$ of over 10 MA/cm$^2$ was recorded at 5 K, which is likely to be caused by a short London penetration depth. The anisotropic Ginzburg-Landau scaling for the angle dependence of $J_{\rm c}$ yielded temperature-dependent scaling parameters $γ_{\rm J}$ that decreased from 1.6 at 30 K to 1.3 at 5 K. This is opposite to the behaviour of NdFeAs(O,F). Additionally, $γ_{\rm J}$ of NdFeAs(O,H) is smaller than that of NdFeAs(O,F). Our results indicate that heavily electron doping by means of hydrogen substitution for oxygen in $Ln$FeAsO is highly beneficial for achieving high $J_{\rm c}$ with low anisotropy without compromising $T_{\rm c}$, which is favourable for high-field magnet applications.

cond-mat.supr-con↗

Realization of epitaxial thin films of the superconductor K-doped BaFe$_\text{2}$As$_\text{2}$

The iron-based superconductor Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$ is emerging as a key material for high magnetic field applications owing to the recent developments in superconducting wires and bulk permanent magnets. Epitaxial thin films play important roles in investigating and artificially tuning physical properties; nevertheless, the synthesis of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ epitaxial thin films remained challenging because of the high volatility of K. Herein, we report the successful growth of epitaxial Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$ thin films by molecular-beam epitaxy with employing a combination of fluoride substrates (CaF$_\text{2}$, SrF$_\text{2}$, and BaF$_\text{2}$) and a low growth temperature (350$-$420$^\circ$C). Our epitaxial thin film grown on CaF$_\text{2}$ showed sharp superconducting transition at an onset critical temperature of 36 K, slightly lower than bulk crystals by ~2 K due presumably to the strain effect arising from the lattice and thermal expansion mismatch. Critical current density ($J$$_\text{c}$) determined by the magnetization hysteresis loop is as high as 2.2 MA/cm$^\text{2}$ at 4 K under self-field. In-field $J$$_\text{c}$ characteristics of the film are superior to the bulk crystals. The realization of epitaxial thin films opens opportunities for tuning superconducting properties by epitaxial strain and revealing intrinsic grain boundary transport of Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$.

cond-mat.supr-con↗

Anisotropy of the transport properties of NdFeAs(O,F) thin films grown on vicinal substrates

NdFeAs(O,F) thin films having different fluorine contents were grown on 5 deg. or 10 deg. vicinal cut MgO and CaF2 single crystalline substrates by molecular beam epitaxy. Structural characterisations by reflection high-energy electron diffraction and x-ray diffraction confirmed the epitaxial growth of NdFeAs(O,F). The resistivities of the ab-plane and along the c-axis were derived from the resistivity measurements in the longitudinal and transversal directions. The c-axis resistivity was always higher than the ab-plane resistivity, resulting from the anisotropic electronic structure. The resistivity anisotropy at 300 K was almost constant in the range of 50-90 irrespective of the F content. On the other hand, the resistivity anisotropy at 56 K showed a strong fluorine dependence: the resistivity anisotropy was over 200 for the films with optimum F contents (superconducting transition temperature Tc around 50 K), whereas the resistivity anisotropy was around 70 for the films in the under-doped regime (Tc between 35 and 45 K). The mass anisotropy are the effective masses along the c-axis and on the ab-plane) close to Tc derived from the anisotropic Ginzburg-Landau approach using the angular-dependency of the ab-plane resistivity was in the range from 2 to 5. On the assumption that the square of the mass anisotropy is equal to the resistivity anisotropy, those values are small compared to the normal state anisotropy.

cond-mat.supr-con↗

Ambipolar suppression of superconductivity by ionic gating in optimally-doped BaFe2(As,P)2 ultrathin films

Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined effects of which are sometimes studied within the same sample. Most often, the result is limited to a shift of the SC dome to different doping values. In a few cases, the maximum SC transition at optimal doping can also be enhanced. In this work, we study the combination of charge doping together with isovalent P substitution and strain by performing ionic gating experiments on BaFe$_2$(As$_{0.8}$P$_{0.2}$)$_2$ ultrathin films. We show that the polarization of the ionic gate induces modulations to the normal-state transport properties that can be mainly ascribed to surface charge doping. We demonstrate that ionic gating can only shift the system away from the optimal conditions, as the SC transition temperature is suppressed by both electron and hole doping. We also observe a broadening of the resistive transition, which suggests that the SC order parameter is modulated nonhomogeneously across the film thickness, in contrast with earlier reports on charge-doped standard BCS superconductors and cuprates.

cond-mat.supr-con↗

Grain boundary characteristics of oxypnictide NdFeAs(O,F) superconductors

We have systematically investigated the grain boundary (GB) angle dependence of transport properties for NdFeAs(O,F) fabricated on [001]-tilt symmetric MgO bicrystal substrates. In our previous study, NdFeAs(O,F) bicrystal films showed a weak-link behaviour even at a GB angle of 6°. However, this was caused by an extrinsic effect originating from the damage to both NdFeAs(O,F) and MgO substrate by excess F-diffusion along the grain boundary. To investigate the intrinsic nature of grain boundaries, we minimized the damage to NdFeAs(O,F) and MgO by reducing the deposition temperature of NdOF over-layer needed for F-doping. The resultant NdFeAs(O,F) bicrystal films have a critical angle of 8.5°, above which Jc starts to decrease exponentially. This critical angle is almost the same as those of other Fe-based superconductors.

cond-mat.supr-con↗

Novel method to study strain effect of thin films using a piezoelectric-based device and a flexible metallic substrate

For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e. superconducting tapes). A strain-induced shift of the superconducting transition temperature of 0.1 K for Co-doped BaFe2As2 was observed along [100] direction, corresponding to a uniaxial pressure derivative dTc/dp100=-4 K/GPa. For Mn3CuN, a uniaxial strain derivative along [100] direction of the Curie temperature dTC/de100=13 K/% was observed. The current approach is applicable to various functional thin films in a wide range of temperatures.

cond-mat.supr-con↗

Fabrication of grain boundary junctions using NdFeAs(O,F) superconducting thin films

We report on the growth of NdFeAs(O,F) thin films on [001]-tilt MgO bicrystal substrates with misorientation angle theta_GB=6°, 12°, 24° and 45°, and their inter- and intra-grain transport properties. X-ray diffraction study confirmed that all our NdFeAs(O,F) films are epitaxially grown on the MgO bicrystals. The theta_GB dependence of the inter-grain critical current density Jc shows that, unlike Co-doped BaFe2As2 and Fe(Se,Te), its decay with theta_GB is rather significant. As a possible reason of this result, fluorine may have diffused preferentially to the grain boundary region and eroded the crystal structure.

cond-mat.supr-con↗

Highly textured oxypnictide superconducting thin films on metal substrates

Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition (IBAD)-MgO/Y2O3/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (Tc) of 43 K with a self-field critical current density (Jc) of 7.0 x 104 A/cm2 at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher Tc as well as better crystalline quality than Co-doped BaFe2As2 coated conductors, in-field Jc of NdFeAs(O,F) was lower than that of Co-doped BaFe2As2. These results suggest that grain boundaries in oxypnictides reduce Jc significantly compared to that in Co-doped BaFe2As2 and, hence biaxial texture is necessary for high Jc.

cond-mat.supr-con↗

Transverse Photo-Voltage Induced by Circularly Polarized Light

We discovered that when circularly polarized light is obliquely incident on a two-dimensional metallic photonic crystal slabs, electrical voltage is induced perpendicularly to the incident plane. Signal sign is reversed by changing the sense of polarization or incident angle. The origin of this transverse photo-induced voltage is explained in terms of the force linear in light intensity induced by the asymmetry brought by angular momentum of incident light.

physics.optics↗

Reciprocal transmittances and reflectances: An elementary proof

We present an elementary proof concerning reciprocal transmittances and reflectances. The proof is direct, simple, and valid for the diverse objects that can be absorptive and induce diffraction and scattering, as long as the objects respond linearly and locally to electromagnetic waves. The proof enables students who understand the basics of classical electromagnetics to grasp the physical basis of reciprocal optical responses. In addition, we show an example to demonstrate reciprocal response numerically and experimentally.

physics.optics↗