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Takao Shimizu

Publications and source records attributed to Takao Shimizu.

2 recordsLinked to original sources

Observation of nonlocal ferron-drag thermoelectricity

The Peltier effect induces a heat current when a charge current passes through a conductor. Since a charge current is conserved at the junction between two different conductors, the difference between the heat flowing in both conductors for the same charge current leads to heating or cooling of the interface, providing an operating mechanism of solid-state heat pumps. Here, we report observation of heat absorption and release signals even in a junction-free, homogeneous metal when placed in proximity to a ferroelectric insulator. Our experiments using active thermographic imaging techniques confirm the prediction of the ferron-drag effect, i.e., the nonlocal excitation of ferrons, the collective excitation of the ferroelectric order, by conduction electrons in the adjacent metal. We reveal the electric-polarization-direction dependence of the temperature change signals and their unexpected increase with the metal thickness beyond the charge screening length, uncovering additional electron-phonon-ferron interactions in the metal/ferroelectric hybrid structure. The discovery of crosstalk between metals and ferroelectrics via remote ferrons could become both a nuisance and an opportunity for highly integrated circuits with ferroelectric barrier materials and revolutionize the design architecture of thermoelectric devices.

cond-mat.mes-hall

Phonon-pair-driven Ferroelectricity Causes Costless Domain-walls and Bulk-boundary Duality

Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles simulations unveil that the robust ferroelectricity is supported by bosonic pairing of all the anionic phonons in bulk HfO2. Strikingly, the paired phonons strongly bond with each other and successfully reach the center of the domain wall without losing their integrity and produce bulk-like domain walls. We then confirmed preservation of the bulk phonon displacements and consequently full revival of the bulk structure at domain walls via aberration-corrected STEM. The newly found duality between the bulk and the domain wall sheds light on previously enigmatic properties such as zero-energy domain walls, perfect Ising-type polar ordering, and exceptionally robust ferroelectricity at the sub-nm scales. The phonon-pairing discovered here is robust against physical boundaries such as domain walls and enables zero momentum and zero-energy cost local ferroelectric switching. This phenomenon demonstrated in Si-compatible ferroelectrics provides a novel technological platform where data storage on domain walls is as feasible as that within the domains, thereby expanding the potential for high-density data storage and advanced ferroelectric applications.

cond-mat.mtrl-sci