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Takashi Suemasu

Publications and source records attributed to Takashi Suemasu.

5 recordsLinked to original sources

Tailoring Mechanical Properties of Germanium Anodes via Metal Incorporation for Improved Cycle Stability

Achieving long-term stability in high-capacity lithium-ion battery anodes remains a critical challenge. In this study, we present a materials-intrinsic strategy for extending the cycle life of Ge, a promising next-generation anode material, through trace doping with metal elements. We systematically investigated the effects of small additions of various metals and found that elements with large atomic size, particularly Yb, markedly improved the cycling stability without sacrificing the initial capacity, while appropriate Yb doping enhanced the anode lifetime by approximately a factor of three. Structural and electrochemical analyses revealed that this improvement originates from mechanical softening of the Ge anode, which suppresses lithiation-induced damage such as cracking and delamination. Nanoindentation measurements further showed a strong negative correlation between dopant atomic size and film hardness, establishing anode softening as a new design principle for damage-tolerant electrodes. Although Yb doping reduced the rate capability at high C-rates, the present results demonstrate a clear shift in design strategy from volume-change suppression to mechanical compliance. These findings provide a useful framework for stabilizing high-capacity alloy anodes through atomic-scale mechanical control.

cond-mat.mtrl-sci

Image processing-based domain-matching simulation for heteroepitaxy

Heteroepitaxy of functional thin films on single-crystal substrates is one of the most general themes in electronic materials research. Here, we propose an algorithm based on image processing for the rapid simulation of heteroepitaxial relationships. The superposition and rotation of various lattice plane images of the film and substrate, which were automatically generated from the crystal structure, rapidly verified all domain matching patterns. Furthermore, the comprehensive validation allowed us to discuss domain matching from multiple perspectives, such as mismatch, matching period, and density of matching lattice points. Therefore, the proposed algorithm will contribute to materials informatics, streamlining a wide range of materials research for functional thin films.

cond-mat.mtrl-sci

Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point

Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which a fine adjustment of the Ni content allows setting the magnetic compensation at room temperature. The reduced magnetization, combined with the large spin polarization of conduction electrons, strongly enhances the STT so that domain wall velocities approaching 3000 m/s can be obtained for Ni compositions close to the compensation point. In addition, a reversal of the domain wall motion direction is observed when the magnetic compensation composition is crossed. This striking feature, related to the change of direction of the spin polarization with respect to that of the net magnetization, is clarified by ab initio band structure calculations.

cond-mat.mtrl-sci

Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3

The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare

cond-mat.mtrl-sci

Magnetic domain walls in nanostrips of single-crystalline $\mathrm{Fe}_4\mathrm{N}(001)$ thin films with fourfold in-plane magnetic anisotropy

We investigated head-to-head domain walls in nanostrips of epitaxial $\mathrm{Fe}_4\mathrm{N}(001)$ thin films, displaying a fourfold magnetic anisotropy. Magnetic force microscopy and micromagnetic simulations show that the domain walls have specific properties, compared to soft magnetic materials. In particular, strips aligned along a hard axis of magnetization are wrapped by partial flux-closure concertina domains below a critical width, while progressively transforming to zigzag walls for wider strips. Transverse walls are favored upon initial application of a magnetic field transverse to the strip, while transformation to a vortex walls is favored upon motion under a longitudinal magnetic field. In all cases the magnetization texture of such fourfold anisotropy domain walls exhibits narrow micro-domain walls, which may give rise to peculiar spin-transfer features.

cond-mat.mtrl-sci