arXiv subjects

Takashi Takahashi

Publications and source records attributed to Takashi Takahashi.

At least 55 records · Page 3Linked to original sources

arXiv2020

Observation of inverted band structure in topological Dirac-semimetal candidate CaAuAs

We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases.

cond-mat.mes-hall↗

arXiv2020

Semi-analytic approximate stability selection for correlated data in generalized linear models

We consider the variable selection problem of generalized linear models (GLMs). Stability selection (SS) is a promising method proposed for solving this problem. Although SS provides practical variable selection criteria, it is computationally demanding because it needs to fit GLMs to many re-sampled datasets. We propose a novel approximate inference algorithm that can conduct SS without the repeated fitting. The algorithm is based on the replica method of statistical mechanics and vector approximate message passing of information theory. For datasets characterized by rotation-invariant matrix ensembles, we derive state evolution equations that macroscopically describe the dynamics of the proposed algorithm. We also show that their fixed points are consistent with the replica symmetric solution obtained by the replica method. Numerical experiments indicate that the algorithm exhibits fast convergence and high approximation accuracy for both synthetic and real-world data.

stat.ML↗

arXiv2020

Macroscopic Analysis of Vector Approximate Message Passing in a Model Mismatch Setting

Vector approximate message passing (VAMP) is an efficient approximate inference algorithm used for generalized linear models. Although VAMP exhibits excellent performance, particularly when measurement matrices are sampled from rotationally invariant ensembles, existing convergence and performance analyses have been limited mostly to cases in which the correct posterior distribution is available. Here, we extend the analyses for cases in which the correct posterior distribution is not used in the inference stage. We derive state evolution equations, which macroscopically describe the dynamics of VAMP, and show that their fixed point is consistent with the replica symmetric solution obtained by the replica method of statistical mechanics. We also show that the fixed point of VAMP can exhibit a microscopic instability, the critical condition of which agrees with that for breaking the replica symmetry. The results of numerical experiments support our findings.

cs.IT↗

arXiv2019

Dichotomy of superconductivity between monolayer FeS and FeSe

The discovery of high-temperature (Tc) superconductivity in monolayer FeSe on SrTiO3 raised a fundamental question whether high Tc is commonly realized in monolayer iron-based superconductors. Tetragonal FeS is a key material to resolve this issue because bulk FeS is a superconductor with Tc comparable to that of isostructural FeSe. However, difficulty in synthesizing tetragonal monolayer FeS due to its metastable nature has hindered further investigations. Here we report elucidation of band structure of monolayer FeS on SrTiO3, enabled by a unique combination of in-situ topotactic reaction and molecular-beam epitaxy. Our angle-resolved photoemission spectroscopy on FeS and FeSe revealed marked similarities in the electronic structure, such as heavy electron doping and interfacial electron-phonon coupling, both of which have been regarded as possible sources of high Tc in FeSe. However, surprisingly, high-Tc superconductivity is absent in monolayer FeS. This is linked to the weak superconducting pairing in electron-doped multilayer FeS in which the interfacial effects are absent. Our results strongly suggest that the cross-interface electron-phonon coupling enhances Tc only when it cooperates with the pairing interaction inherent to the superconducting layer. This finding provides a key insight to explore new heterointerface high-Tc superconductors.

cond-mat.supr-con↗

arXiv2019

Unusual change in the Dirac-cone energy band upon two-step magnetic transition in CeBi

We have performed angle-resolved photoemission spectroscopy (ARPES) on CeBi which undergoes a two-step antiferromagnetic (AF) transition with temperature. Soft-x-ray ARPES has revealed the inverted band structure at the X point of bulk Brillouin zone for CeBi (and also for LaBi) as opposed to LaSb with non-inverted band structure. Low-energy ARPES on CeBi has revealed the Dirac-cone band at the Gamma point in the paramagnetic phase associated with the bulk band inversion. On the other hand, a double Dirac-cone band appears on entering the first AF phase at T = 25 K, whereas a single Dirac-cone band recovers below the second AF transition at T = 14 K. The present result suggests an intricate interplay between antiferromagnetism and topological surface states in CeBi.

cond-mat.mes-hall↗

arXiv2019

Monolayer VTe2: Incommensurate Fermi surface nesting and suppression of charge density waves

We investigated the electronic structure of monolayer VTe2 grown on bilayer graphene by angle-resolved photoemission spectroscopy (ARPES). We found that monolayer VTe2 takes the octahedral 1T structure in contrast to the monoclinic one in the bulk, as evidenced by the good agreement in the Fermi-surface topology between ARPES results and first-principles band calculations for octahedral monolayer 1T-VTe2. We have revealed that monolayer 1T-VTe2 at low temperature is characterized by a metallic state whereas the nesting condition is better than that of isostructural monolayer VSe2 which undergoes a CDW transition to insulator at low temperature. The present result suggests an importance of Fermi-surface topology for characterizing the CDW properties of monolayer TMDs.

cond-mat.mtrl-sci↗

arXiv2019

Evidence for bulk nodal loops and universality of Dirac-node arc surface states in ZrGeXc (Xc = S, Se, Te)

We have performed angle-resolved photoemission spectroscopy (ARPES) on layered ternary compounds ZrGeXc (Xc = S, Se, and Te) with square Ge lattices. ARPES measurements with bulk-sensitive soft-x-ray photons revealed a quasi-two-dimensional bulk-band structure with the bulk nodal loops protected by glide mirror symmetry of the crystal lattice. Moreover, high-resolution ARPES measurements near the Fermi level with vacuum-ultraviolet photons combined with first-principles band-structure calculations elucidated a Dirac-node-arc surface state traversing a tiny spin-orbit gap associated with the nodal loops. We found that this surface state commonly exists in ZrGeXc despite the difference in the shape of nodal loops. The present results suggest that the spin-orbit coupling and the multiple nodal loops cooperatively play a key role in creating the exotic Dirac-node-arc surface states in this class of topological line-node semimetals.

cond-mat.mes-hall↗

arXiv2019

Replicated Vector Approximate Message Passing For Resampling Problem

Resampling techniques are widely used in statistical inference and ensemble learning, in which estimators' statistical properties are essential. However, existing methods are computationally demanding, because repetitions of estimation/learning via numerical optimization/integral for each resampled data are required. In this study, we introduce a computationally efficient method to resolve such problem: replicated vector approximate message passing. This is based on a combination of the replica method of statistical physics and an accurate approximate inference algorithm, namely the vector approximate message passing of information theory. The method provides tractable densities without repeating estimation/learning, and the densities approximately offer an arbitrary degree of the estimators' moment in practical time. In the experiment, we apply the proposed method to the stability selection method, which is commonly used in variable selection problems. The numerical results show its fast convergence and high approximation accuracy for problems involving both synthetic and real-world datasets.

stat.ML↗

arXiv2019

Electronic structure of Bi2Te3/FeTe heterostructure: implications for unconventional superconductivity

We have performed angle-resolved photoemission spectroscopy on a heterostructure consisting of topological insulator Bi2Te3 and iron chalcogenide FeTe fabricated on SrTiO3 substrate by molecular-beam-epitaxy technique. This system was recently found to show superconductivity albeit non-superconducting nature of each constituent material. Upon interfacing FeTe with two quintuple layers of Bi2Te3, we found that the Dirac-cone surface state of Bi2Te3 is shifted toward higher binding energy, while the holelike band at the Fermi level originating from FeTe moves toward lower binding energy. This suggests that electron charge transfer takes place from FeTe to Bi2Te3 through the interface. The present result points to importance of hole-doped FeTe interface for the occurrence of unconventional superconductivity.

cond-mat.supr-con↗

arXiv2019

Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES

We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the Bi2Se3 nano-islands (1-3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the Bi2Se3 nano-islands. A comparison of the local band structure with that in ultrathin Bi2Se3 films on Si(111) gives us further insights into the nature of the observed topological states. This result demonstrates that nano-ARPES is a very useful tool for characterizing topological heterostructures.

cond-mat.mes-hall↗

arXiv2018

Observation of Chiral Fermions with a Large Topological Charge and and Associated Fermi-Arc Surface States in CoSi

Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally-chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, spin-1 chiral fermion and double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively. Intriguingly, we found that the bulk Fermi surfaces are purely composed of the energy bands related to these fermions. We also find the surface states connecting the Fermi surfaces associated with these fermions, suggesting the existence of the predicted Fermi-arc surface states. Our result provides the first experimental evidence for the chiral topological fermions beyond Dirac and Weyl fermions in condensed-matter systems, and paves the pathway toward realizing exotic electronic properties associated with unconventional chiral fermions.

cond-mat.mes-hall↗

arXiv2018

Observation of Dirac-like energy band and unusual spectral line shape in quasi-one-dimensional superconductor Tl2Mo6Se6

We have performed high-resolution angle-resolved photoemission spectroscopy of the quasi-one-dimensional (1D) topological superconductor candidate Tl2Mo6Se6 consisting of weakly-coupled Mo3Se3 chains. We found a quasi-1D Fermi surface arising from a Dirac-like energy band, which is associated with the nonsymmorphic screw symmetry of the chains and predicted to trigger topological superconductivity. We observed a significant spectral-weight reduction over a wide energy range, together with a tiny Fermi-edge structure which exhibits a signature of a superconducting-gap opening below the superconducting-transition temperature. The observed quasi-1D Dirac-like band and its very small density of states point to an unconventional nature of superconductivity in Tl2Mo6Se6.

cond-mat.supr-con↗

arXiv2018

Pseudogap, Fermi arc, and Peierls-insulating phase induced by 3D-2D crossover in monolayer VSe2

One of important challenges in condensed-matter physics is to realize new quantum states of matter by manipulating the dimensionality of materials, as represented by the discovery of high-temperature superconductivity in atomic-layer pnictides and room-temperature quantum Hall effect in graphene. Transition-metal dichalcogenides (TMDs) provide a fertile platform for exploring novel quantum phenomena accompanied by the dimensionality change, since they exhibit a variety of electronic/magnetic states owing to quantum confinement. Here we report an anomalous metal-insulator transition induced by 3D-2D crossover in monolayer 1T-VSe2 grown on bilayer graphene. We observed a complete insulating state with a finite energy gap on the entire Fermi surface in monolayer 1T-VSe2 at low temperatures, in sharp contrast to metallic nature of bulk. More surprisingly, monolayer 1T-VSe2 exhibits a pseudogap with Fermi arc at temperatures above the charge-density-wave temperature, showing a close resemblance to high-temperature cuprates. This similarity suggests a common underlying physics between two apparently different systems, pointing to the importance of charge/spin fluctuations to create the novel electronic states, such as pseudogap and Fermi arc, in these materials.

cond-mat.mtrl-sci↗

arXiv2018

Observation of band crossings protected by nonsymmorphic symmetry in the layered ternary telluride Ta3SiTe6

We have performed angle-resolved photoemission spectroscopy of layered ternary telluride Ta3SiTe6 which is predicted to host nodal lines associated with nonsymmorphic crystal symmetry. We found that the energy bands in the valence-band region show Dirac-like dispersions which present a band degeneracy at the R point of the bulk orthorhombic Brillouin zone. This band degeneracy extends one-dimensionally along the whole SR high-symmetry line, forming the nodal lines protected by the glide mirror symmetry of the crystal. We also observed a small band splitting near EF which supports the existence of hourglass-type dispersions predicted by the calculation. The present results provide an excellent opportunity to investigate the interplay between exotic nodal fermions and nonsymmorphic crystal symmetry.

cond-mat.mes-hall↗

arXiv2018

Observation of a Dirac nodal line in AlB2

We have performed angle-resolved photoemission spectroscopy of AlB2 which is isostructural to high-temperature superconductor MgB2. Using soft-x-ray photons, we accurately determined the three-dimensional bulk band structure and found a highly anisotropic Dirac-cone band at the K point in the bulk hexagonal Brillouin zone. This band disperses downward on approaching the H point while keeping its degeneracy at the Dirac point, producing a characteristic Dirac nodal line along the KH line. We also found that the band structure of AlB2 is regarded as a heavily electron-doped version of MgB2 and is therefore well suited for fully visualizing the predicted Dirac nodal line. The present results suggest that (Al,Mg)B2 system is a promising platform for studying the interplay among Dirac nodal line, carrier doping, and possible topological superconducting properties.

cond-mat.mtrl-sci↗

arXiv2018

A statistical mechanics approach to de-biasing and uncertainty estimation in LASSO for random measurements

In high-dimensional statistical inference in which the number of parameters to be estimated is larger than that of the holding data, regularized linear estimation techniques are widely used. These techniques have, however, some drawbacks. First, estimators are biased in the sense that their absolute values are shrunk toward zero because of the regularization effect. Second, their statistical properties are difficult to characterize as they are given as numerical solutions to certain optimization problems. In this manuscript, we tackle such problems concerning LASSO, which is a widely used method for sparse linear estimation, when the measurement matrix is regarded as a sample from a rotationally invariant ensemble. We develop a new computationally feasible scheme to construct a de-biased estimator with a confidence interval and conduct hypothesis testing for the null hypothesis that a certain parameter vanishes. It is numerically confirmed that the proposed method successfully de-biases the LASSO estimator and constructs confidence intervals and p-values by experiments for noisy linear measurements.

stat.ME↗

arXiv2017

Three-dimensional porous graphene networks expand graphene-based electronic device applications

Graphene with excellent 2D characters has been required to expand their potentials for meeting applicational demands in recent years. As one avenue, several approaches for fablicating 3D porous graphene network structures have been developed to realize multi-functional graphene materials with 2D graphene. Here we overview characteristics of 3D porous graphene for future electronic device applications along with physical insights into "2D to 3D graphene", where the characters of 2D graphene such as massless Dirac fermions are well preserved. The present review thus summarizes recent 3D porous graphene studies with a perspective for providing new and board graphene electronic device applications.

cond-mat.mtrl-sci↗

arXiv2016

Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications.

cond-mat.mtrl-sci↗