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Takatoshi Yamada

Publications and source records attributed to Takatoshi Yamada.

3 recordsLinked to original sources

Imaging of isotope diffusion using atomic-scale vibrational spectroscopy

The spatial resolutions of even the most sensitive isotope analysis techniques based on light or ion probes are limited to a few hundred nanometres. Although vibration spectroscopy using electron probes has achieved higher spatial resolution, the detection of isotopes at the atomic level has been challenging so far. Here we show the unambiguous isotopic imaging of 12C carbon atoms embedded in 13C graphene and the monitoring of their self-diffusion via atomic level vibrational spectroscopy. We first grow a domain of 12C carbon atoms in a preexisting crack of 13C graphene, which is then annealed at 600C for several hours. Using scanning transmission electron microscopy electron energy loss spectroscopy, we obtain an isotope map that confirms the segregation of 12C atoms that diffused rapidly. The map also indicates that the graphene layer becomes isotopically homogeneous over 100 nanometre regions after 2 hours. Our results demonstrate the high mobility of carbon atoms during growth and annealing via selfdiffusion. This imaging technique can provide a fundamental methodology for nanoisotope engineering and monitoring, which will aid in the creation of isotope labels and tracing at the nanoscale.

physics.atom-ph

Electron emission from conduction band of diamond with negative electron affinity

Experimental evidence explaining the extremely low-threshold electron emission from diamond reported in 1996 has been obtained for the first time. Direct observation using combined ultraviolet photoelectron spectroscopy/field emission spectroscopy (UPS/FES) proved that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical vapour deposited (CVD) diamond was at conduction band minimum (CBM) utilising negative electron affinity (NEA). The significance of the result is that not only does it prove the utilisation of NEA as the dominant factor for the extremely low-threshold electron emission from heavily N-doped CVD diamond, but also strongly implies that such low-threshold emission is possible from other types of diamond, and even other materials having NEA surface. The low-threshold voltage, along with the stable intensity and remarkably narrow energy width, suggests that this type of electron emission can be applied to develop a next generation vacuum nano-electronic devices with long lifetime and high energy resolution.

cond-mat.mtrl-sci

Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

cond-mat.mtrl-sci