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Takayoshi Katase

Publications and source records attributed to Takayoshi Katase.

At least 19 recordsLinked to original sources

Distinct Roles of Hydrogen in Superconducting and Ferromagnetic Phases of CoZr$_{2}$H$_{x}$

Hydrogenation offers a versatile route to tuning the physical properties of intermetallic compounds. In this study, we synthesized CoZr$_{2}$H$_{x}$ with different hydrogen contents and found that hydrogen is incorporated in two distinct concentration regimes separated by a wide composition gap: a low-concentration hydrogenated superconducting phase ($x$ = 0-0.054) and a high-concentration hydrogenated ferromagnetic phase ($x$ = 2.786). Hydrogen plays fundamentally different roles in the two concentration regimes. In the high hydrogen concentration phase, the Zr-H interactions substantially modify the metallic bands crossing the Fermi level, leading to the emergence of ferromagnetism. In contrast, in the low hydrogen concentration phase, hydrogen behaves as a nonmagnetic impurity without altering the electronic band structure. Despite the nearly identical Debye temperatures across the low-concentration series, the superconducting transition temperature ($T_{\mathrm{c}}$) is progressively suppressed with increasing hydrogen content.The observed $T_{\mathrm{c}}$ suppression is quantitatively described by the Abrikosov-Gor'kov pair-breaking theory, indicating that the superconducting gap of CoZr$_{2}$ is anisotropic or multigap rather than a fully isotropic $s$-wave symmetry.

cond-mat.supr-con

Uniaxial negative thermal expansion in a weak-itinerant-ferromagnetic phase of CoZr$_{2}$H$_{3.49}$

We discovered unique uniaxial negative thermal expansion (NTE) behavior for a weak-itinerant-ferromagnetic phase of CoZr$_{2}$H$_{3.49}$. CoZr$_{2}$ is known as a superconductor exhibiting uniaxial NTE along the $c$-axis, which is called anomalous thermal expansion (ATE). Additionally, CoZr$_{2}$ is also known as a well-absorbent of hydrogen, and hydrogen insertion raises weak-itinerant ferromagnetism instead of superconductivity. However, the influence of hydrogen insertion on ATE behavior in this system is still unclear. To investigate it, we performed powder synchrotron X-ray diffraction (SXRD) for CoZr$_{2}$H$_{3.49}$. Through Arrott plots analysis, we determined the Curie temperature ($T_{\mathrm{C}}$) to be 139 K, and the Rhodes-Wohlfarth ratio was estimated to be 3.49, which clearly exceeds 1, suggesting the itinerancy of emerging ferromagnetism. Temperature dependencies of lattice constants $a$ and $c$ were extracted from powder SXRD analyses, and we revealed that lattice constant $c$ exhibited NTE behavior below $T_{\mathrm{C}}$. The uniaxial NTE behavior along the $c$-axis can be understood by sharpening an antibonding Co3$dz^{2}$ partial density of states near the Fermi level, linked to the expansion of a one-dimensional Co-Co chain running parallel to the $c$-axis.

cond-mat.mtrl-sci

Diffusion-Controlled Anion Conversion into Dense Polycrystalline and Single-Crystalline Oxyhydrides

Oxyhydrides represent a new class of functional materials, yet the synthesis of dense polycrystals or single-crystals suitable for transport studies remains a significant challenge due to hydrogen desorption at elevated temperatures. The co-diffusion of oxygen and hydrogen in densely sintered BaTiO3 enables the topochemical formation of millimeter-scale bulk BaTiO3-xHx via high-pressure diffusion control (HPDC). Hydride ions selectively occupy oxygen-deficient sites, as confirmed by neutron diffraction, TPD, TG, and NMR. Systematic tuning of the hydrogen content and precise control of the electronic conductivity were achieved via HPDC. Hydrogen desorption analysis reveals distinct bonding states between near-surface and interior-bulk regions, which significantly affect the oxynitride conversion under N2 flow. Importantly, the diffusion-based nature of HPDC allows direct anion conversion even in single-crystalline oxides, as demonstrated by the synthesis of SrTiO3-xHx single crystals. These results establish HPDC as a general platform for accessing dense, metastable oxyhydrides with tunable anionic composition and transport properties.

cond-mat.mtrl-sci

Specific heat analyses on optical-phonon-derived uniaxial negative thermal expansion system $Tr$Zr$_{2}$ ($Tr$ = Fe and Co$_{1-x}$Ni$_{x}$)

Recently, huge uniaxial negative thermal expansion (NTE) along a $c$-axis has been observed in transition-metal ($Tr$) zirconides $Tr$Zr$_{2}$ with a tetragonal CuAl$_{2}$-type structure. In a recent study on FeZr$_{2}$ [M. Xu et al., Nat. Commun. 14, 4439 (2023)], the importance of optical phonons to the emergence of the $c$-axis NTE in FeZr$_{2}$ has been proposed. In this study, the physical properties of $Tr$Zr$_{2}$ ($Tr$ = Fe and Co$_{1-x}$Ni$_{x}$) have been studied by specific heat, sound velocity measurements, and theoretical phonon calculations to discuss the importance of optical phonons to the emergence of the $c$-axis NTE in CoZr$_{2}$ and FeZr$_{2}$. From analyses of lattice specific heat, we found that Ni substitution results in a systematic decrease in oscillator strength for the Einstein modes with 8.74 meV (CoZr$_{2}$). From phonon calculations, the low-energy optical phonon branches at the $Γ$ point were observed for CoZr$_{2}$ and FeZr$_{2}$ with $c$-axis NTE, but not in NiZr$_{2}$ with positive thermal expansion. The enhancement of phonon density of states near the above-mentioned optical phonon energy in CoZr$_{2}$ and FeZr$_{2}$ is consistent with the specific heat analyses. We propose the importance of the low-energy optical phonons to the emergence of the $c$-axis NTE in TrZr$_{2}$.

cond-mat.supr-con

High entropy effect on thermoelectric properties of nonequilibrium cubic phase of AgBiSe2-2xSxTex with x = 0-0.6

Silver bismuth diselenide (AgBiSe2) has much attention as an efficient thermoelectric material due to its low thermal conductivity. However, AgBiSe2 exhibits multiple crystal structural transitions with temperature, and high thermoelectric performance was realized only in high-temperature cubic phase. We previously reported the stabilization of cubic phase in AgBiSe2-2xSxTex with x = 0.6-0.8 at room temperature by high-entropy-alloy (HEA) approach. The cubic HE-type AgBiSe0.8S0.6Te0.6 achieved a high ZT value of 0.8 at 748 K. In this paper, we succeeded in stabilizing the cubic phase in AgBiSe2-2xSxTex with x = 0-0.6 by ice-quenching method, and investigated the HE effect on the thermoelectric properties. Cubic AgBiSe2-2xSxTex exhibited n-type conductivity from 300 K to 10 K. We found that electronic conductivity was largely increased around room temperature with increasing the amount of S and Te, although carrier concentration showed almost the same values. The S and Te substitutions induced the variation of band structure, resulting in the carrier mobility enhancement. Furthermore, thermal conducutivity showed reduction tendency with increasing the amount of S and Te due to enhancement of phonon scattering. Simultaneous electronic conductivity increase and thermal conductivity reduction resulted in the systematic improvement of the ZT values for HE-type cubic AgBiSe2-2xSxTex.

cond-mat.mtrl-sci

Stabilization and high thermoelectric performance of high-entropy-type cubic AgBi(S, Se, Te)2

As thermoelectric generators can convert waste heat into electricity, they play an important role in energy harvesting. The metal chalcogenide AgBiSe2 is one of the high-performance thermoelectric materials with low lattice thermal conductivity (klat), but it exhibits temperature-dependent crystal structural transitions from hexagonal to rhombohedral, and finally a cubic phase as the temperature rises. The high figure-of-merit ZT is obtained only for the high-temperature cubic phase. In this study, we utilized the high-entropy-alloy (HEA) concept for AgBiSe2 to stabilize the cubic phase throughout the entire temperature range with enhanced thermoelectric performance. We synthesized high-entropy-type AgBiSe2-2xSxTex bulk polycrystals and realized the stabilization of the cubic phase from room temperature to 800 K for x > 0.6. The ultra-low klat at of 0.30 Wm^-1K^-1 and the high peak ZT 0.9 at around 750 K were realized for cubic AgBiSe2-2xSxTex without carrier tuning. In addition, the average ZT value of x = 0.6 and 0.7 for the temperature range of 360-750 K increased to 0.38 and 0.40, respectively, which are comparable to the highest previously reported values.

cond-mat.mtrl-sci

Superconductivity in In-doped AgPbBiTe3 compounds synthesized by high-pressure synthesis

NaCl-type metal tellurides (MTe) have been widely studied due to unique physical properties. We investigated the In-doping effects on structural and physical properties of Na-Cl type (AgPbBi)(1-x)/3InxTe and the superconducting properties of the In-doped samples. Polycrystalline samples with x = 0-0.5 were synthesized by utilizing high-pressure synthesis. For x = 0.2-0.5, superconductivity was observed in magnetization measurements, where the highest transition temperature (Tc) was 2.8 K for x = 0.4. We measured specific heat for x = 0.4 and confirmed the bulk nature of the superconductivity. The evolution of the Seebeck coefficient and lattice constant by In doping suggests that In valence state is In+3, and the In doping generates electron carriers in the (AgPbBi)(1-x)/3InxTe system.

cond-mat.supr-con

Tuning of Carrier Concentration and Superconductivity in High-Entropy-Alloy-Type Metal Telluride (AgSnPbBi)(1-x)/4InxTe

High-entropy-alloy-type (HEA-type) compound superconductors have been drawing much attention as a new class of exotic superconductors with local structural inhomogeneity. NaCl-type (Ag,In,Sn,Pb,Bi)Te is a typical HEA-type superconductor, but the carrier doping mechanism had been unclear. In this study, we synthesized (Ag,In,Sn,Pb,Bi)Te with various In concentration using high-pressure synthesis: the studied system is (AgSnPbBi)(1-x)/4InxTe (x = 0-0.4). Single-phase samples were obtained for x = 0-0.3. A semiconductor-like temperature dependence of resistivity was observed for x = 0, while superconductivity appeared for the In-doped samples. The highest transition temperature (Tc) was 3.0 K for x = 0.3. The Seebeck coefficient decreases with increase of x, which suggests that In3+ generates electron carriers in (AgSnPbBi)(1-x)/4InxTe. Tuning of carrier concentration and superconducting properties of (Ag,In,Sn,Pb,Bi)Te would be useful for further investigation of exotic superconductivity in the HEA-type compound.

cond-mat.supr-con

Superconductivity in In-doped AgSnBiTe3 with possible band inversion

We investigated the chemical pressure effects on structural and electronic properties of SnTe-based material using partial substitution of Sn by Ag0.5Bi0.5, which results in lattice shrinkage. For Sn1-2x(AgBi)xTe, single-phase polycrystalline samples were obtained with a wide range of x. On the basis of band calculations, we confirmed that the Sn1-2x(AgBi)xTe system is basically possessing band inversion and topologically preserved electronic states. To explore new superconducting phases related to the topological electronic states, we investigated the In-doping effects on structural and superconducting properties for x = 0.33 (AgSnBiTe3). For (AgSnBi)(1-y)/3InyTe, single-phase polycrystalline samples were obtained for y = 0-0.5 by high-pressure synthesis. Superconductivity was observed for y = 0.2-0.5. For y = 0.4, the transition temperature estimated from zero-resistivity state was 2.4 K, and the specific heat investigation confirmed the emergence of bulk superconductivity. Because the presence of band inversion was theoretically predicted, and the parameters obtained from specific heat analyses were comparable to In-doped SnTe, we expect that the (AgSnBi)(1-y)/3InyTe and other (Ag,In,Sn,Bi)Te phases are candidate systems for studying topological superconductivity.

cond-mat.supr-con

Photoinduced Transient States of Antiferromagnetic Orderings in La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ and SrFeO${}_{3}$ Thin Films Observed through Time-resolved Resonant Soft X-ray Scattering

The relationship between the magnetic interaction and photoinduced dynamics in antiferromagnetic perovskites is investigated in this study. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ thin films, commensurate spin ordering is accompanied by charge disproportionation, whereas SrFeO${}_{3}$ thin films show incommensurate helical antiferromagnetic spin ordering due to increased ferromagnetic coupling compared to La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$. To understand the photoinduced spin dynamics in these materials, we investigate the spin ordering through time-resolved resonant soft X-ray scattering. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$, ultrafast quenching of the magnetic ordering within 130 fs through a nonthermal process is observed, triggered by charge transfer between the Fe atoms. We compare this to the photoinduced dynamics of the helical magnetic ordering of SrFeO${}_{3}$. We find that the change in the magnetic coupling through optically induced charge transfer can offer an even more efficient channel for spin-order manipulation.

cond-mat.str-el

Crystal structure built from a GeO$_6$-GeO$_5$ polyhedra network with high thermal stability: $β$-SrGe$_2$O$_5$

By tackling the challenge of extending transparent oxide semiconductors to Ge based oxides, we have found a not-yet-reported crystal structure, named $β$-SrGe$_2$O$_5$, which is composed of edge-sharing GeO$_6$ octahedra interconnected by GeO$_5$ bipyramids. Single crystals were successfully grown by the high-pressure flux method. $β$-SrGe$_2$O$_5$ has a band gap of 5.2 eV and a dispersive conduction band with an effective mass as small as 0.34 times the electron rest mass, which originates from the edge-sharing GeO$_6$ octahedra network. Although known compounds with octahedral GeO$_6$ coordination are commonly unstable at atmospheric pressure and elevated temperatures, $β$-SrGe$_2$O$_5$ exhibits thermal stability up to 700 $^\circ$C.

cond-mat.mtrl-sci

Shallow Valence Band of Rutile GeO$_2$ and P-type Doping

GeO$_2$ has an $α$-quartz-type crystal structure with a very wide fundamental band gap of 6.6 eV and is a good insulator. Here we find that the stable rutile-GeO$_2$ polymorph with a 4.6 eV band gap has a surprisingly low $\sim$6.8 eV ionization potential, as predicted from the band alignment using first-principles calculations. Because of the short O$-$O distances in the rutile structure containing cations of small effective ionic radii such as Ge$^{4+}$, the antibonding interaction between O 2p orbitals raises the valence band maximum energy level to an extent that hole doping appears feasible. Experimentally, we report the flux growth of $1.5 \times 1.0 \times 0.8$ mm$^3$ large rutile GeO$_2$ single crystals and confirm the thermal stability for temperatures up to $1021 \pm 10~^\circ$C. X-ray fluorescence spectroscopy shows the inclusion of unintentional Mo impurities from the Li$_2$O$-$MoO$_3$ flux, as well as the solubility of Ga in the r-GeO$_2$ lattice as a prospective acceptor dopant. The resistance of the Ga- and Mo-codoped r-GeO$_2$ single crystals is very high at room temperature, but it decreases by 2-3 orders of magnitude upon heating to 300 $^\circ$C, which is attributed to thermally-activated p-type conduction.

cond-mat.mtrl-sci

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$

Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflectance and Raman-scattering analysis to evaluate the electron transport governed by optical phonon scattering. A calculated room-temperature mobility on the order of $3.9 \times 10^2$ cm$^2$V$^{-1}$s$^{-1}$ is obtained, identifying cubic SrGeO$_3$ as one of the most promising TCOs. Employing classical phonon theory and a combined experimental-theoretical approach, a comprehensive analysis of the intrinsic electron mobility in the cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$, and SrTiO$_3$ is provided based on the magnitude of polarization and eigenfrequency of optically active phonons.

cond-mat.mtrl-sci

Superconductivity at 48 K of heavily hydrogen-doped SmFeAsO epitaxial films grown by topotactic chemical reaction using CaH2

High-critical-temperature (Tc) superconductivity at 48 K is reported for hydrogen-doped SmFeAsO epitaxial films on MgO single-crystal substrates. The key processes are pulsed laser deposition to grow undoped SmFeAsO epitaxial films and subsequent topotactic chemical reaction using CaH2 powders under evacuated silica-glass ampule atmosphere. Based on this post-deposition thermal annealing treatment that we have developed, a maximum hydrogen concentration x = ~0.35 was realized in SmFeAs(O1-xHx). Disordered hydrogen-substitution at O sites is experimentally confirmed directly by atomic-scale microstructural observations. Magnetization measurement validates the bulk nature of the high-Tc superconductivity in the films. This method will become an effective and general method to fabricate various high-quality oxyhydride epitaxial films.

cond-mat.supr-con

Superconductivity in La1-xCexOBiSSe: carrier doping by mixed valence of Ce ions

We report the effects of Ce substitution on structural, electronic, and magnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9), which are newly obtained in this study. Metallic conductivity was observed for x > 0.1 because of electron carriers induced by mixed valence of Ce ions, as revealed by bond valence sum calculation and magnetization measurements. Zero resistivity and clear diamagnetic susceptibility were obtained for x = 0.2-0.6, indicating the emergence of bulk superconductivity in these compounds. Dome-shaped superconductivity phase diagram with the highest transition temperature (Tc) of 3.1 K, which is slightly lower than that of F-doped LaOBiSSe (Tc = 3.7 K), was established. The present study clearly shows that the mixed valence of Ce ions can be utilized as an alternative approach for electron-doping in layered bismuth-chalcogenides to induce superconductivity.

cond-mat.supr-con

Leakage-free electrolytes with different conductivity for non-volatile memory device utilizing insulator/metal ferromagnet transition of SrCoOx

The electrochemical switching of SrCoOx-based non-volatile memory with thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivity (s) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO 7Al2O3 film with nanoporous structure (CAN), but the electrochemical oxidation/reduction of SrCoOx layer required the application of high gate voltage (Vg) up to 20 V for a very long retention-time (t) 40 minutes, primarily due to the low s (2.0 x 10-8 S cm-1 at RT) of leakage-free water.We then controlled the s of leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with nanopillar array structure, from 8.0 x 10-8 S cm-1 to 2.5 x 10-6 S cm-1 at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of SrCoOx layer under small Vg = -3 V, becomes two orders of magnitude shorter with increase of the s of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high s of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device.

cond-mat.mtrl-sci

Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as advanced smart window.

cond-mat.mtrl-sci

Current-induced effective magnetic field in a half-metallic oxide La0.67Sr0.33MnO3

We investigated current-induced effective magnetic field Heff in half-metallic oxide La0.67Sr0.33MnO3 (LSMO) films with various thicknesses by using the planar Hall effect. Applying in-plane current to the LSMO films exerted an in-plane Heff orthogonal to the current direction on magnetization. The Heff magnitude increased with increasing current magnitude, and the direction reversed when the applied current switched to opposite sign. Assuming that a 6.5-u.c. insulating layer is created in the LSMO, the values of Heff observed in devices with three different LSMO thicknesses were almost scaled with current density, evaluated from the effective LSMO thickness excluding the insulating layer, suggesting that Heff is induced in the LSMO bulk.

cond-mat.mtrl-sci