arXiv subjects

Takayoshi Kohmura

Publications and source records attributed to Takayoshi Kohmura.

At least 37 records · Page 2Linked to original sources

arXiv2025

A detailed study on spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy

We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. In our previous study, we successfully optimized the design of the PDD structure, achieving both the suppression of large leakage current and satisfactory X-ray spectroscopic performance. Here, we report a detailed study on the X-ray spectroscopic performance of the XRPIX with the optimized PDD structure. The data were obtained at $-60^\circ\mathrm{C}$ with the "event-driven readout mode", in which only a triggering pixel and its surroundings are read out. The energy resolutions in full width at half maximum at 6.4 keV are $178\pm1$ eV and $291\pm1$ eV for single-pixel and all-pixel event spectra, respectively. The all-pixel events include charge-sharing pixel events as well as the single-pixel events. These values are the best achieved in the history of our development. We argue that the gain non-linearity in the low energy side due to excessive charge injection to the charge-sensitive amplifier is a major factor to limit the current spectroscopic performance. Optimization of the amount of the charge injection is expected to lead to further improvement in the spectroscopic performance of XRPIX, especially for the all-pixel event spectrum.

astro-ph.IM↗

arXiv2024

Suzaku Observations of the Cold Front in A3667: a Non-Equilibrium Ionization State of the Intracluster Medium

We present a systematic study of the thermodynamic properties of the intracluster medium (ICM), including the plasma conditions in the ICM, in the merging galaxy cluster A3667 using Suzaku. We analyze the X-ray spectra of the ICM between the northwestern and the southeastern radio relics across a prominent cold front in A3667 to search for the ICM in a non-equilibrium ionization (NEI) state. We find that the ICM inside the cold front exhibits an NEI state with an ionization parameter of $(2.5\pm0.7)\times10^{11}\,\mathrm{s\,cm^{-3}}$ at the $90\%$ confidence level, which is lower than that expected from a collisional ionization equilibrium (CIE) state of the ICM (i.e., $n_\mathrm{e}t > 10^{12}\,\mathrm{s\,cm^{-3}}$). The timescale calculated from the ionization parameter of the ICM inside the cold front is $ 4.6\pm1.2\,\mathrm{Myr}$, which is much shorter than the thermal equilibration timescale. A weak transonic sloshing motion might explain the possibility that the ICM inside the cold front of A3667 is in the NEI state. In addition, the NEI state of the ICM in A3667 seems to be associated with the elongated radio halo bridging the region between the northwestern radio relic and the prominent cold front in A3667 across the cluster center.

astro-ph.HE↗

arXiv2024

Polarized X-rays Correlated with Short--Timescale Variability of Cygnus X-1

We systematically investigate the variability of polarized X-rays on a timescale of a few seconds in the low/hard state of the black hole binary Cygnus X-1. The correlation between polarization degrees and angles with X-Ray intensity was analyzed using data collected by the Imaging X-ray Polarimetry Explorer (IXPE) in June 2022. Given that X-Ray variability in the low/hard state of Cygnus X-1 is non-periodic, flux peaks were aggregated to suppress statistical fluctuations. We divided the temporal profiles of these aggregated flux peaks into seven time segments and evaluated the polarization for each segment. The results reveal that the polarization degree was 4.6\%$\pm$1.2 and 5.3\%$\pm$1.2 before and after the peak, respectively, but decreased to 3.4\%$\pm$1.1 and 2.7\%$\pm$1.1 in the segments including and immediately following the peak. Furthermore, the polarization angle exhibited a slight shift from approximately 30$^{\circ}$ to $\sim$40$^{\circ}$ before and after the peak. These findings suggest that the accretion disk contracts with increasing X-Ray luminosity, and the closer proximity of the X-Ray emitting gas to the black hole may lead to reduced polarization.

astro-ph.HE↗

arXiv2024

SUIM project: measuring the upper atmosphere from the ISS by observations of the CXB transmitted through the Earth rim

The upper atmosphere at the altitude of 60-110 km, the mesosphere and lower thermosphere (MLT), has the least observational data of all atmospheres due to the difficulties of in-situ observations. Previous studies demonstrated that atmospheric occultation of cosmic X-ray sources is an effective technique to investigate the MLT. Aiming to measure the atmospheric density of the MLT continuously, we are developing an X-ray camera, "Soipix for observing Upper atmosphere as Iss experiment Mission (SUIM)", dedicated to atmospheric observations. SUIM will be installed on the exposed area of the International Space Station (ISS) and face the ram direction of the ISS to point toward the Earth rim. Observing the cosmic X-ray background (CXB) transmitted through the atmosphere, we will measure the absorption column density via spectroscopy and thus obtain the density of the upper atmosphere. The X-ray camera is composed of a slit collimator and two X-ray SOI-CMOS pixel sensors (SOIPIX), and will stand on its own and make observations, controlled by a CPU-embedded FPGA "Zynq". We plan to install the SUIM payload on the ISS in 2025 during the solar maximum. In this paper, we report the overview and the development status of this project.

astro-ph.IM↗

arXiv2024

Status of Xtend telescope onboard X-Ray Imaging and Spectroscopy Mission (XRISM)

Xtend is one of the two telescopes onboard the X-ray imaging and spectroscopy mission (XRISM), which was launched on September 7th, 2023. Xtend comprises the Soft X-ray Imager (SXI), an X-ray CCD camera, and the X-ray Mirror Assembly (XMA), a thin-foil-nested conically approximated Wolter-I optics. A large field of view of $38^{\prime}\times38^{\prime}$ over the energy range from 0.4 to 13 keV is realized by the combination of the SXI and XMA with a focal length of 5.6 m. The SXI employs four P-channel, back-illuminated type CCDs with a thick depletion layer of 200 $μ$m. The four CCD chips are arranged in a 2$\times$2 grid and cooled down to $-110$ $^{\circ}$C with a single-stage Stirling cooler. Before the launch of XRISM, we conducted a month-long spacecraft thermal vacuum test. The performance verification of the SXI was successfully carried out in a course of multiple thermal cycles of the spacecraft. About a month after the launch of XRISM, the SXI was carefully activated and the soundness of its functionality was checked by a step-by-step process. Commissioning observations followed the initial operation. We here present pre- and post-launch results verifying the Xtend performance. All the in-orbit performances are consistent with those measured on ground and satisfy the mission requirement. Extensive calibration studies are ongoing.

astro-ph.IM↗

arXiv2024

Evaluation of the X-ray SOI pixel detector with the on-chip ADC

XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rmμ$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray satellites. To mount on satellites, it is essential that the ADC (analog-to-digital converter) be implemented on the detector because such peripheral circuits must be as compact as possible to achieve a large imaging area in the limited space in satellites. Thus, we developed a new XRPIX device with the on-chip ADC, and evaluated its performances. As the results, the integral non-linearity was evaluated to be 6 LSB (least significant bit), equivalent to 36 eV. The differential non-linearity was less than 0.7 LSB, and input noise from the on-chip ADC was 5~$\rm{e^{-}}$. Also, we evaluated end-to-end performance including the sensor part as well as the on-chip ADC. As the results, energy resolution at 5.9 keV was 294 $\rm{\pm}$ 4 eV in full-width at half maximum for the best pixel.

astro-ph.IM↗

arXiv2024

Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy

We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. The PDD structure is formed in a thick p-type substrate, to which high negative voltage is applied to make it fully depleted. A pinned p-well is introduced at the backside of the insulator layer to reduce a dark current generation at the Si-SiO$_{2}$ interface and to fix the back-gate voltage of the SOI transistors. An n-well is further introduced between the p-well and the substrate to make a potential barrier between them and suppress a leakage current. An optimization study on the n-well dopant concentration is necessary because a higher dopant concentration could result in a higher potential barrier but also in a larger sense-node capacitance leading to a lower spectroscopic performance, and vice versa. Based on a device simulation, we fabricated five candidate chips having different n-well dopant concentrations. We successfully found out the best n-well design, which suppressed a large leakage current and showed satisfactory X-ray spectroscopic performance. Too low and too high n-well dopant concentration chips showed a large leakage current and degraded X-ray spectroscopic performance, respectively. We also found that the dependency of X-ray spectroscopic performance on the n-well dopant concentration can be largely explained by the difference in sense-node capacitance.

astro-ph.IM↗

arXiv2023

Radiation-Induced Degradation Mechanism of X-ray SOI Pixel Sensors with Pinned Depleted Diode Structure

The X-ray Silicon-On-Insulator (SOI) pixel sensor named XRPIX has been developed for the future X-ray astronomical satellite FORCE. XRPIX is capable of a wide-band X-ray imaging spectroscopy from below 1 keV to a few tens of keV with a good timing resolution of a few tens of $μ$s. However, it had a major issue with its radiation tolerance to the total ionizing dose (TID) effect because of its thick buried oxide layer due to the SOI structure. Although new device structures introducing pinned depleted diodes dramatically improved radiation tolerance, it remained unknown how radiation effects degrade the sensor performance. Thus, this paper reports the results of a study of the degradation mechanism of XRPIX due to radiation using device simulations. In particular, mechanisms of increases in dark current and readout noise are investigated by simulation, taking into account the positive charge accumulation in the oxide layer and the increase in the surface recombination velocity at the interface between the sensor layer and the oxide layer. As a result, it is found that the depletion of the buried p-well at the interface increases the dark current, and that the increase in the sense-node capacitance increases the readout noise.

astro-ph.IM↗

arXiv2023

Xtend, the Soft X-ray Imaging Telescope for the X-ray Imaging and Spectroscopy Mission (XRISM)

Xtend is a soft X-ray imaging telescope developed for the X-Ray Imaging and Spectroscopy Mission (XRISM). XRISM is scheduled to be launched in the Japanese fiscal year 2022. Xtend consists of the Soft X-ray Imager (SXI), an X-ray CCD camera, and the X-ray Mirror Assembly (XMA), a thin-foil-nested conically approximated Wolter-I optics. The SXI uses the P-channel, back-illuminated type CCD with an imaging area size of 31 mm on a side. The four CCD chips are arranged in a 2$\times$2 grid and can be cooled down to $-120$ $^{\circ}$C with a single-stage Stirling cooler. The XMA nests thin aluminum foils coated with gold in a confocal way with an outer diameter of 45~cm. A pre-collimator is installed in front of the X-ray mirror for the reduction of the stray light. Combining the SXI and XMA with a focal length of 5.6m, a field of view of $38^{\prime}\times38^{\prime}$ over the energy range from 0.4 to 13 keV is realized. We have completed the fabrication of the flight model of both SXI and XMA. The performance verification has been successfully conducted in a series of sub-system level tests. We also carried out on-ground calibration measurements and the data analysis is ongoing.

astro-ph.IM↗

arXiv2023

A broadband X-ray imaging spectroscopy in the 2030s: the FORCE mission

In this multi-messenger astronomy era, all the observational probes are improving their sensitivities and overall performance. The Focusing on Relativistic universe and Cosmic Evolution (FORCE) mission, the product of a JAXA/NASA collaboration, will reach a 10 times higher sensitivity in the hard X-ray band ($E >$ 10~keV) in comparison with any previous hard X-ray missions, and provide simultaneous soft X-ray coverage. FORCE aims to be launched in the early 2030s, providing a perfect hard X-ray complement to the ESA flagship mission Athena. FORCE will be the most powerful X-ray probe for discovering obscured/hidden black holes and studying high energy particle acceleration in our Universe and will address how relativistic processes in the universe are realized and how these affect cosmic evolution. FORCE, which will operate over 1--79 keV, is equipped with two identical pairs of supermirrors and wideband X-ray imagers. The mirror and imager are connected by a high mechanical stiffness extensible optical bench with alignment monitor systems with a focal length of 12~m. A light-weight silicon mirror with multi-layer coating realizes a high angular resolution of $<15''$ in half-power diameter in the broad bandpass. The imager is a hybrid of a brand-new SOI-CMOS silicon-pixel detector and a CdTe detector responsible for the softer and harder energy bands, respectively. FORCE will play an essential role in the multi-messenger astronomy in the 2030s with its broadband X-ray sensitivity.

astro-ph.HE↗

arXiv2022

Single Event Tolerance of X-ray SOI Pixel Sensors

We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.

astro-ph.IM↗

arXiv2022

Proton radiation damage tolerance of wide dynamic range SOI pixel detectors

We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of using INTPIX to observe X-ray polarization in space. When the semiconductor detector is used in space, it is subject to radiation damage resulting from high-energy protons. Therefore, it is necessary to investigate whether INTPIX has high radiation tolerance for use in space. The INTPIX8 was irradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, National Institute of Quantum Science in Japan, and evaluated the degradation of the performance, such as energy resolution and non-uniformity of gain and readout noise between pixels. After 500 rad irradiation, which is the typical lifetime of an X-ray astronomy satellite, the degradation of energy resolution at 14.4 keV is less than 10%, and the non-uniformity of readout noise and gain between pixels is constant within 0.1%.

astro-ph.IM↗

arXiv2022

X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite "FORCE"

We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as cosmic rays. From previous studies, positive charges trapped in the SiO2 insulator are known to cause the degradation of the detector performance. To improve the radiation hardness, we developed XRPIX equipped with Double-SOI (D-SOI) structure, introducing an additional silicon layer in the SiO2 insulator. This structure is aimed at compensating for the effect of the trapped positive charges. Although the radiation hardness to cosmic rays of the D-SOI detectors has been evaluated, the radiation effect due to the X-ray irradiation has not been evaluated. Then, we conduct an X-ray irradiation experiment using an X-ray generator with a total dose of 10 krad at the SiO2 insulator, equivalent to 7 years in orbit. As a result of this experiment, the energy resolution in full-width half maximum for the 5.9 keV X-ray degrades by 17.8 $\pm$ 2.8% and the dark current increases by 89 $\pm$ 13%. We also investigate the physical mechanism of the increase in the dark current due to X-ray irradiation using TCAD simulation. It is found that the increase in the dark current can be explained by the increase in the interface state density at the Si/SiO2 interface.

astro-ph.IM↗

arXiv2021

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.

astro-ph.IM↗

arXiv2020

Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"

We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the "XRPIX6E" device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0.68 keV and Al-K X-rays at 1.5 keV are successfully detected in the "Frame readout mode", in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1.1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ~$18~e^-$ (rms) and ~$13~e^-$ (rms), respectively.

astro-ph.IM↗

arXiv2020

Experimental studies on the charge transfer inefficiency of CCD developed for the soft X-ray imaging telescope Xtend aboard the XRISM satellite

We present experimental studies on the charge transfer inefficiency (CTI) of charge-coupled device (CCD) developed for the soft X-ray imaging telescope, Xtend, aboard the XRISM satellite. The CCD is equipped with a charge injection (CI) capability, in which sacrificial charge is periodically injected to fill the charge traps. By evaluating the re-emission of the trapped charge observed behind the CI rows, we find that there are at least three trap populations with different time constants. The traps with the shortest time constant, which is equivalent to a transfer time of approximately one pixel, are mainly responsible for the trailing charge of an X-ray event seen in the following pixel. A comparison of the trailing charge in two clocking modes reveals that the CTI depends not only on the transfer time but also on the area, namely the imaging or storage area. We construct a new CTI model with taking into account with both transfer-time and area dependence. This model reproduces the data obtained in both clocking modes consistently. We also examine apparent flux dependence of the CTI observed without the CI technique. The higher incident X-ray flux is, the lower the CTI value becomes. It is due to a sacrificial charge effect by another X-ray photon. This effect is found to be negligible when the CI technique is used.

astro-ph.IM↗

arXiv2020

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.

physics.ins-det↗

arXiv2020

Optical Blocking Performance of CCDs Developed for the X-ray Astronomy Satellite XRISM

We have been developing P-channel Charge-Coupled Devices (CCDs) for the upcoming X-ray Astronomy Satellite XRISM, planned to be launched in 2021. While the basic design of the CCD camera (Soft X-ray Imager: SXI) is almost the same as that of the lost Hitomi (ASTRO-H) observatory, we are planning to reduce the "light leakages" that is one of the largest problems recognized in Hitomi data. We adopted a double-layer optical blocking layer on the XRISM CCDs and also added an extra aluminum layer on the backside of them. We develop a newly designed test sample CCD and irradiate it with optical light to evaluate the optical blocking performance. As a result, light leakages are effectively reduced compared with that of the Hitomi CCDs. We thus conclude that the issue is solved by the new design and that the XRISM CCDs satisfy the mission requirement for the SXI.

astro-ph.IM↗