Takenori Fujii — Page 2

arXiv2003

Transport Properties of Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ Single Crystals Grown by a Floating-Zone Method

A parent insulator of the Bi-based high-$T_c$ superconductor Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ was successfully grown by a traveling solvent floating zone method. The in-plane resistivity $ρ_{ab}$ shows metallic behavior ($dρ_{ab}/dT >$ 0) near room temperature, although the magnitude of the resistivity is far above the Mott limit for metallic conduction. The Hall mobility of the parent insulator does not so much differ from that of an optimally doped sample. These results suggest that the system is not a simple insulator with a well-defined gap, and the hole in the parent insulator is essentially itinerant, as soon as it is doped.

cond-mat.str-el↗

arXiv2003

Large Transport Properties of Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ Single Crystals Grown by a Floating-Zone Method

A parent insulator of the Bi-based high-$T_c$ superconductor Bi$_2$Sr$_{2-x}$La$_x$CaCu$_2$O$_{8+δ}$ was successfully grown by a traveling solvent floating zone method. The in-plane resistivity $ρ_{ab}$ shows metallic behavior ($dρ_{ab}/dT >$ 0) near room temperature, although the magnitude of the resistivity is far above the Mott limit for metallic conduction. The Hall mobility of the parent insulator does not so much differ from that of an optimally doped sample. These results suggest that the system is not a simple insulator with a well-defined gap, and the hole in the parent insulator is essentially itinerant, as soon as it is doped.

cond-mat.str-el↗

arXiv2002

The Effects of the Misfit Structure on Thermoelectric Properties of Bi2-xPbxSr2Co2Oy Single Crystals

In-plane anisotropy of the resistivity and thermopower was measured for single crystal Bi2-xPbxSr2Co2Oy. There is large in-plane anisotropy, which is attributed to the anisotropic pseudogap formation due to the different crystal symmetry between the square Bi2Sr2O4 layer and the triangular CuO2 layer. The magnitude of the thermopower both along a- and b-axis direction increases with Pb doping from x=0 to 0.4, where we observe discontinuous shrink of b-axis length. We attribute this to the enhancement of the misfitness. Thus, we can improve the thermoelectric properties by tuning the misfitness.

cond-mat.str-el↗

arXiv2002

Block-Layer Concept for the Layered Co Oxide: A Design for Thermoelectric Oxides

High-Tc Cu oxides consist of the alternating stack of the superconductive CuO2 layer and the block layer, such as Bi2Sr2O4 or La2-xSrxO2. By changing the block layer, we can change their physical properties, such as transition temperature Tc. The thermoelectric Co oxides have a similar layered structure composed of the conductive CoO2 layer and the blocking layer. Thus, we propose that their thremoelectric properties can be finely tuned by modifying the block layer.

cond-mat.str-el↗

arXiv2002

Doping Dependence of Anisotropic Resistivities in Trilayered Superconductor Bi2Sr2Ca2Cu3O10+delta (Bi-2223)

The doping dependence of the themopower, in-plane resistivity rho_ab(T), out-of-plane resistivity rho_c(T), and susceptibility has been systematically measured for high-quality single crystal Bi2Sr2Ca2Cu3O10+delta. We found that the transition temperature Tc and pseudogap formation temperature T_rho_c*, below which rho_c shows a typical upturn, do not change from their optimum values in the "overdoped" region, even though doping actually proceeds. This suggests that, in overdoped region, the bulk $T_c$ is determined by the always underdoped inner plane, which have a large superconducting gap, while the carriers are mostly doped in the outer planes, which have a large phase stiffness.

cond-mat.supr-con↗

arXiv2002

In-plane Anisotropy on Resistivity and Thermopower in The Misfit Layered Oxide Bi2-xPbxSr2Co2Oy

We investigated the in-plane anisotropy on the resistivity and thermopower of Bi2-xPbxSr2Co2Oy single crystals, which have a misfit structure between the hexagonal CoO2 layer and the rock salt Bi2Sr2O4 layer. The resistivity and thermopower show significantly large anisotropy, which exceeds two at maximum. This anisotropy would come from the anisotropic pseudogap formation enhanced by the misfit structure. The thermopower changes with Pb doping to take a maximum at x=0.4. The misfit structure improves the thermoelectric properties through chemical pressure. The power factor is as large as 9 muW/cmK2 at 100 K for x=0.6, which is the highest value for thermoelectric oxides at 100 K.

cond-mat.str-el↗

arXiv2000

Pseudogap in Bi2Sr2CaCu2O8+d studied by measuring anisotropic susceptibilities and out-of-plane transport

We find in the Bi2Sr2CaCu2O8+d system that the characteristic temperatures T*_chi [below which the uniform susceptibilities chi_ab(T) (H perpendicular to c) and chi_c(T)(H parallel to c) decrease] and T*_rho_c (below which the out-of-plane resistivity rho_c(T) shows typical upturn) coincide for all doping levels. We attribute the T dependence of chi's and rho_c to the anomalous (pseudogapped) density-of-states (DOS) in high-Tc cuprates. Furthermore, the anisotropy in the T dependence of chi's is universal, i.e., chi_c proportional to1.6chi_ab, showing that there is only a single T-dependent component in the chi's. This implies that the Curie-like behavior (dchi/dT<0) observed in overdoped samples is also caused by a DOS effect.

cond-mat.supr-con↗