arXiv subjects

Takeshi Seki

Publications and source records attributed to Takeshi Seki.

At least 19 recordsLinked to original sources

arXiv2026

Theory of staggered damping-like spin-orbit torque on synthetic antiferromagnetic domain walls

The Néel, or staggered, spin-orbit torque (SOT) enables an efficient electrical manipulation of antiferromagnetic order. However, it has been tied to special crystal structures, and only its field-like component is established. We develop a theory of staggered damping-like SOT, which arises generically in synthetic antiferromagnets sandwiched by the same heavy metal on both sides. Deriving a Néel-vector Lagrangian, we obtain the domain-wall (DW) velocity in closed form: bilinear in current and in-plane field, opposite in sign for Néel and Bloch walls, and tunable through the interlayer exchange coupling. DW structure thus becomes a control knob for DW motion, while the DW motion, in turn, offers an electrical readout of its structure. Micromagnetic simulations confirm the theory. The predicted sign reversals and scaling laws of the DW velocity, together with the thresholds for the Néel-Bloch transition, give immediate experimental targets.

cond-mat.mes-hall↗

arXiv2026

Electric Current Control of Helimagnetic Chirality from a Multidomain State in the Helimagnet MnAu$_2$

In this paper, we study the domain wall dynamics under electric current in the helimagnet MnAu$_2$. We have found that the threshold electric current of the transition from a multidomain state to a single-chiral domain state in a magnetic field is much lower than that of chirality reversal from a single-chiral domain within certain ranges of temperature and magnetic field. The chirality after the transition depends on whether the magnetic field and electric current were parallel or antiparallel. Numerical calculations based on the Landau-Lifshitz-Gilbert equation reproduced the experimental observations. These results indicate that the domain walls are highly mobile in the helimagnet.

cond-mat.mtrl-sci↗

arXiv2026

Dynamical stability by spin transfer in nearly isotropic magnets

Spin transfer torques (STTs) control magnetisation by electric currents, enabling a range of nano-scale spintronic applications. They can destabilise the equilibrium magnetisation state by counteracting magnetic relaxation. Here, we maximise the STT effect through a dedicated growth-annealing protocol for CoFeB thin films, such that magnetic anisotropies originating from the interface and shape almost cancel each other. The nearly isotropic magnets enable low-current dynamical stabilisation of the magnetisation in the direction opposite to an applied magnetic field, thereby realising a spintronic analogue of the Kapitza pendulum. In an intermediate current regime, the STT drives large magnetisation vector fluctuations that cover the entire Bloch sphere. The continuous variable associated with the stochastic magnetisation direction may serve as a resource for probabilistic computing and neuromorphic hardware. Our results establish isotropic magnets as a platform to study as-yet-uncharted, far-from-equilibrium spin dynamics including anti-magnonics, with promising implications for unconventional computing paradigms.

cond-mat.mes-hall↗

arXiv2025

Microscopic correlation between magnetostriction and magnetic damping

Although the relationship between magnetostriction and magnetic damping is often described phenomenologically, their intrinsic connection remains unclear. In this study, we demonstrate that the magnitude of magnetic damping depends on the sign of magnetostriction in ($\mathrm{Fe_{1-x}Co_{x})_{4}N}$ and $\mathrm{Ni_{1-y}Co_{y}}$ alloys across various compositions, consistent with experimental observations. This behavior is attributed to strain-induced changes in exchange splitting, which shift the minority spin density of states near the Fermi level, thereby affecting both magnetostriction and damping through spin-conserving transitions. Additionally, the presence of locally degenerate orbitals plays a crucial role in determining magnetostriction. These findings suggest that magnetization dynamics and magnetostriction can be intrinsically controlled, facilitating the design of magnetic materials for applications such as flexible spintronics.

cond-mat.mtrl-sci↗

arXiv2025

Fe contribution to the magnetic anisotropy of $L{1_0}$-ordered FePt thin films studied by angle-dependent x-ray magnetic circular dichroism

Among magnetic thin films with perpendicular magnetic anisotropy (PMA), $L1_0$-ordered FePt has attracted significant attention because of its exceptionally strong PMA. However, the microscopic origin of its strong PMA has not been elucidated experimentally. We have investigated the contribution of the Fe $3d$ electrons to its magnetic anisotropy energy by angle-dependent x-ray magnetic circular dichroism at the Fe $L_{2,3}$ edge. By this technique, one can deduce the magnetic dipole moment $m_\text{T}$, which represents the anisotropic spatial distribution of spin-polarized electrons, and the orbital moment anisotropy (OMA) of Fe $3d$ electrons. Detected finite $m_\text{T}$ indicates that the spin-polarized Fe $3d$ electrons are distributed preferentially in the out-of-plane direction of the films. This $m_\text{T}$ of Fe overwhelms the positive contribution of OMA to PMA, and reduces the PMA of $L1_0$-ordered FePt thin films, consistent with a previous first-principles calculation. The present result implies that a large positive contribution of the non-magnetic element Pt rather than Fe governs the PMA of $L1_0$-ordered FePt thin films.

cond-mat.mtrl-sci↗

arXiv2025

Evidence for single variant in altermagnetic RuO2(101) thin films

Altermagnetism presents intriguing possibilities for spintronic devices due to its unique combination of strong spin-splitting and zero net magnetization. However, realizing its full potential hinges on fabricating single-variant altermagnetic thin films. In this work, we present definitive evidence for the formation of single-variant altermagnetic RuO2(101) thin films with fully epitaxial growth on Al2O3(1-102) r-plane substrates, confirmed through rigorous structural analyses using X-ray diffraction, atomic-resolution transmission electron microscopy and X-ray magnetic linear dichroism. The mutual correspondence of the occupancy of oxygen atoms on the surfaces of RuO2(101)[010] and Al2O3(1-102)[11-20] plays a decisive role in the formation of the single-variant RuO2, which is also supported by our first-principles density functional theory calculations. We further observed spin-splitting magnetoresistance in the single-variant RuO2(101)/CoFeB bilayers, highlighting the characteristic effect of single variant on spin transport. The demonstration of single-variant RuO2(101) films marks a significant advancement in the field of altermagnetism and paves the way for exploring their potential applications.

cond-mat.mtrl-sci↗

arXiv2025

Stoichiometry control and epitaxial growth of AgCrSe2 thin films by pulsed-laser deposition

We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag deficiency in thin films, the nucleation of impurity phases is suppressed, resulting in the c-axis-oriented and single-phase AgCrSe2 thin film. Structural analysis using x-ray diffraction and cross-sectional scanning transmission electron microscopy reveals epitaxial growth with the presence of both twisted and polar domains. Optical absorbance spectrum and magnetization measurements show absorption edge at around 0.84 eV and magnetic transition temperature at 41 K, respectively. These values are consistent with the reported values of direct bandgap and Néel temperature of bulk AgCrSe2, reflecting a single-phase and stoichiometric feature of the obtained film. Our demonstration of epitaxial thin-film growth of AgCrSe2 serves as a bedrock for exploration of its potential thermoelectric and spintronic functionalities at surface or heterointerfaces.

cond-mat.mtrl-sci↗

arXiv2025

Suppression of ferromagnetism in rippled La$_{2/3}$Sr$_{1/3}$MnO$_3$ membrane with process-induced strain prepared by epitaxial lift-off technique

Transition metal oxides are a platform for exploring strain-engineered intriguing physical properties and developing spintronic or flexible electronic functionalities owing to strong coupling of spin, charge and lattice degrees of freedom. In this study, we exemplify the strain-engineered magnetism of La$_{2/3}$Sr$_{1/3}$MnO$_3$ in freestanding and rippled membrane forms without and with process-induced strain, respectively, prepared by epitaxial lift-off technique. We find that the deposition of Pt/Ti stressor suppresses the crack formation in the lift-off process and induces a ripple structure in the La$_{2/3}$Sr$_{1/3}$MnO$_3$ membrane. Laser micrograph and Raman spectroscopy show a ripple period of about 30 um and a height of a few um, where alternating convex and concave structures are subjected to tensile strain of 0.6% and compressive strain of 0.5%, respectively. While the freestanding La$_{2/3}$Sr$_{1/3}$MnO$_3$ membrane exhibits room-temperature ferromagnetism, the macroscopic magnetic transition temperature (TC) of the rippled membrane is reduced by as large as 27%. Temperature-variable Kerr microscopy observation in the rippled membrane reveals that the spatial variation of TC to be approximately 4% of the macroscopic TC, which coincides with the local strains at convex and concave structures. The large reduction of macroscopic TC in the rippled membrane may be ascribed to the lattice disorders due to strain gradient. Our demonstration of tuning ferromagnetism by the ripple structure validates the high potential of the process-induced strain in epitaxial lift-off technique and paves the way for strain-mediated emerging physical properties in various transition metal oxides.

cond-mat.mtrl-sci↗

arXiv2024

Antisymmetric interlayer exchange coupling spontaneously built in synthetic antiferromagnetic structure by film growth

The antisymmetric-type long-range exchange interaction between two ferromagnetic layers through a nonmagnetic layer, called antisymmetric interlayer exchange coupling (AIEC), has recently been discovered and attracted much attention. This paper reports that the AIEC is naturally built in synthetic antiferromagnets depending on the thin film growth condition. For the synthetic antiferromagnets consisting of Pt/Co/Ir/Co/Pt layers, two kinds of film growth parameters are examined: the effects of epitaxial growth and oblique incident of sputter-deposition. The present results indicate that the spatial fluctuations in thicknesses are one of the major sources inducing the AIEC while the epitaxial growth, which leads to the sharp interfaces and the uniformity in layer thicknesses, effectively suppresses the unexpected AIEC. In addition, the oblique sputter-deposition provides the large AIEC and the anisotropic distribution of AIEC direction in the case of textured films. The findings in this study provide key factors for designing the AIEC and is useful to develop emerging computing technologies with artificial three-dimensional topological magnetic structures.

cond-mat.mtrl-sci↗

arXiv2024

Current-induced sliding motion in a helimagnet MnAu$_2$

We found signatures of current-induced sliding motion in helimagnetic $\mathrm{Mn}\mathrm{Au}_2$ thin films. An abrupt change in differential resistivity occurred at a threshold bias current in the helimagnetic state, whereas it was absent in the induced ferromagnetic state. Broadband voltage noise also emerged above the threshold current in the helimagnetic state. Based on the similarity to canonical charge/spin density wave systems, we ascribed the origin of these phenomena to the sliding motion of the helimagnetic structure.

cond-mat.mtrl-sci↗

arXiv2024

Non-coplanar spin structure in a metallic thin film of triangular lattice antiferromagnet CrSe

An antiferromagnetic metal with two-dimensional triangular network offers a unique playground of intriguing magneto-transport properties and functionalities stemming from interplay between conducting electrons and intricate magnetic phases. A NiAs-type CrSe is one of the candidates owing to alternate stackings of Cr and Se triangular atomic networks in its crystal structure. While fabrication of CrSe thin films is indispensable to develop functional devices, studies on its thin-film properties have been limited to date due to the lack of metallic samples. Here, we report on realization of metallic conductivities of CrSe thin films, which allows to investigate their intrinsic magneto-transport properties. The metallic sample exhibits co-occurrence of a weak ferromagnetism with perpendicular magnetic anisotropy and the antiferromagnetic behavior, indicating the presence of non-coplanar spin structures. In addition, control of polarity and tilting angle of the non-coplanar spin structure is accomplished by a sign of cooling magnetic fields. The observed non-coplanar spin structure, which can be a source of emergent magnetic field acting on the conducting electrons, highlights a high potential of the triangular lattice antiferromagnet and provide unique platform for functional thin-film devices composed of NiAs-type derivative Cr chalcogenides and pnictides.

cond-mat.mtrl-sci↗

arXiv2024

Giant tunability of magnetoelasticity in Fe$_4$N system: Platform for unveiling correlation between magnetostriction and magnetic damping

Flexible spintronics has opened new avenue to promising devices and applications in the field of wearable electronics. Particularly, miniaturized strain sensors exploiting the spintronic function have attracted considerable attention, in which the magnetoelasticity linking magnetism and lattice distortion is a vital property for high-sensitive detection of strain. This paper reports the demonstration that the magnetoelastic properties of Fe$_4$N can be significantly varied by partially replacing Fe with Co or Mn. The high quality Fe$_4$N film exhibits large negative magnetostriction along the [100] direction ($λ_{100}$) of -121 ppm while Fe$_{3.2}$Co$_{0.8}$N shows $λ_{100}$ of +46 ppm. This wide-range tunability of $λ_{100}$ from -121 to +46 across 0 allows us to thoroughly examine the correlation between the magnetoelasticity and other magnetic properties. The strong correlation between $λ_{100}$ and magnetic damping ($α$) is found. The enhanced extrinsic term of $α$ is attributable to the large two magnon scattering coming from the large magnetostriction. In addition, the density of states at the Fermi level plays a primal role to determine both $λ_{100}$ and the intrinsic term of $α$. Thanks to the giant tunability and the bipolarity of magnetoelasticity, magnetic nitrides are candidate materials for high-sensitive spintronic strain sensors.

cond-mat.mtrl-sci↗

arXiv2024

Quantitative measurement of figure of merit for transverse thermoelectric conversion in Fe/Pt metallic multilayers

This study presents a measurement method for determining the figure of merit for transverse thermoelectric conversion ($ z_\mathrm{T}T $) in thin film forms. Leveraging the proposed methodology, we comprehensively investigate the transverse thermoelectric coefficient ($ S_\mathrm{T} $), in-plane electrical conductivity ($ σ_{yy} $), and out-of-plane thermal conductivity ($ κ_{xx} $) in epitaxial and polycrystalline Fe/Pt metallic multilayers. The $ κ_{xx} $ values of multilayers with a number of stacking repetitions ($ N $) of 200 are lower than those of FePt alloy films, indicating that the multilayer structure effectively contributes to the suppression of $ κ_{xx} $. $ z_\mathrm{T}T $ is found to increase with increasing $ N $, which remarkably reflects the $ N $-dependent enhancement of the $ S_\mathrm{T} $ values. Notably, $ S_\mathrm{T} $ and $ σ_{yy} $ are significantly larger in the epitaxial multilayers than those in the polycrystalline counterparts, whereas negligible differences in $ κ_{xx} $ are observed between the epitaxial and polycrystalline multilayers. This discrepancy in $ σ_{yy} $ and $ κ_{xx} $ with respect to crystal growth is due to the different degree of anisotropy in electron transport between epitaxial and polycrystalline multilayers, and epitaxial growth can lead to an enhancement of $ z_\mathrm{T}T $ in the multilayers. This study is the first demonstration in the evaluation of $ z_\mathrm{T}T $ in thin film forms, and our proposed measurement technique reveals the transverse thermoelectric properties inherent to multilayers.

cond-mat.mtrl-sci↗

arXiv2023

Impact of epitaxial strain relaxation on ferromagnetism in a freestanding La2/3Sr1/3MnO3 membrane

Manganite perovskites host emerging physical properties of strongly-correlated electrons with charge, spin, and lattice degrees of freedom. Using epitaxial lift-off technique, we report enhancement of saturation magnetization and ferromagnetic transition temperature of the freestanding La2/3Sr1/3MnO3 membrane compared with the as-grown film on SrTiO3 substrate involving lateral tensile strain. Structural analysis reveals shrinkage of unit-cell volume by tensile strain relaxation in the freestanding membrane, which causes enhancement of the ferromagnetic interaction. The impact of the microscopic lattice deformation on the ferromagnetism of La2/3Sr1/3MnO3 indicates a high potential of this material for flexible electronics application with intriguing functionalities in strongly-correlated electron systems.

cond-mat.str-el↗

arXiv2022

Chirality-dependent spin current generation in a helimagnet: zero-field probe of chirality

In a magnetic texture, the spin of a conduction electron is forced to be aligned to the localized moment. As a result, the topology of the magnetic texture affects the electron dynamics in nontrivial ways. A representative example is the topological Hall effect in noncoplanar spin textures with finite spin chirality. While propagating in the noncoplanar spin texture, electrons acquire Berry phase, and their motion is deflected as if they were in a magnetic field. Here, we report a distinct Berry phase effect in a coplanar helimagnet: the spin moment of the conduction electron is polarized under electric currents depending on the chirality of the helimagnet. The accumulated spin polarization works as a source of spin current, and the chirality can be detected by the inverse spin Hall mechanism. The functionality allows us to read out the chirality without magnetic fields, and therefore paves the way to future helimagnet-based spintronics.

cond-mat.mes-hall↗

arXiv2022

Sm-Co-based amorphous alloy films for zero-field operation of transverse thermoelectric generation

Transverse thermoelectric generation using magnetic materials is essential to develop active thermal engineering technologies, for which the improvements of not only the thermoelectric output but also applicability and versatility are required. In this study, using combinatorial material science and lock-in thermography technique, we have systematically investigated the transverse thermoelectric performance of Sm-Co-based alloy films. The high-throughput material investigation revealed the best Sm-Co-based alloys with the large anomalous Nernst effect (ANE) as well as the anomalous Ettingshausen effect (AEE). In addition to ANE/AEE, we discovered unique and superior material properties in these alloys: the amorphous structure, low thermal conductivity, and large in-plane coercivity and remanent magnetization. These properties make it advantageous over conventional materials to realize heat flux sensing applications based on ANE, as our Sm-Co-based films can generate thermoelectric output without an external magnetic field. Importantly, the amorphous nature enables the fabrication of these films on various substrates including flexible sheets, making the large-scale and low-cost manufacturing easier. Our demonstration will provide a pathway to develop flexible transverse thermoelectric devices for smart thermal management.

cond-mat.mtrl-sci↗

arXiv2022

Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase

Co$_{3}$Sn$_{2}$S$_{2}$ (CSS) is one of the shandite compounds and becomes a magnetic Weyl semimetal candidate below the ferromagnetic phase transition temperature ($\textit{T}_\textrm{C}$). In this paper, we investigate the temperature ($\textit{T}$) dependence of conversion between charge current and spin current for the CSS thin film by measuring the spin-torque ferromagnetic resonance (ST-FMR) for the trilayer consisting of CSS / Cu / CoFeB. Above $\textit{T}_\textrm{C}$ ~ 170 K, the CSS / Cu / CoFeB trilayer exhibits the clear ST-FMR signal coming from the spin Hall effect in the paramagnetic CSS and the anisotropic magnetoresistance (AMR) of CoFeB. Below $\textit{T}_\textrm{C}$, on the other hand, it is found that the ST-FMR signal involves the dc voltages ($\textit{V}_\textrm{dc}$) not only through the AMR but also through the giant magnetoresistance (GMR). Thus, the resistance changes coming from both AMR and GMR should be taken into account to correctly understand the characteristic field angular dependence of $\textit{V}_\textrm{dc}$. The spin Hall torque generated from the ferromagnetic CSS, which possesses the same symmetry as that for spin Hall effect, dominantly acts on the magnetization of CoFeB. A definite increase in the spin-charge conversion efficiency ($ξ$) is observed at $\textit{T}$ < $\textit{T}_\textrm{C}$, indicating that the phase transition to the ferromagnetic CSS promotes the highly efficient spin-charge conversion. In addition, our theoretical calculation shows the increase in spin Hall conductivity with the emergence of magnetic moment at $\textit{T}$ < $\textit{T}_\textrm{C}$, which is consistent with the experimental observation.

cond-mat.mes-hall↗

arXiv2022

Room-temperature chirality switching in a helimagnetic thin film

Helimagnetic structures, in which the magnetic moments are spirally ordered, host an internal degree of freedom called chirality (or helicity) corresponding to the handedness of the helix. The chirality seems quite robust against disturbances and is therefore promising for next-generation magnetic memory. While the chirality control was recently achieved by the magnetic field sweep with the application of an electric current at low temperature in a conducting helimagnet, problems such as low working temperature and cumbersome control sequence have to be solved in practical applications. Another issue is the thin film fabrication that enables the development of spintronic devices based on helimagnets. Here we show chirality switching by electric current pulses at room temperature in a thin-film MnAu$_2$ helimagnetic conductor. The result demonstrates the feasibility of helimagnet-based spintronics that can overcome all the above problems.

cond-mat.mes-hall↗