arXiv subjects

Takeshi Seki

Publications and source records attributed to Takeshi Seki.

40 records · Page 3Linked to original sources

arXiv2016

Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures

Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in novel epitaxial Ru/Co2FeAl(CFA)/MgO heterostructures with interfacial perpendicular magnetic anisotropy (PMA). Perpendicularly magnetized tunnel junctions with the structure of Ru/CFA/MgO were fabricated and exhibited an effective voltage control on switching fields for the CFA free layer. A large VCMA coefficient of 108 (139) fJ/Vm for the CFA film was achieved at room temperature (4 K). The interfacial stability in the heterostructure was confirmed by repeating measurements. Temperature dependences of both the interfacial PMA and the VCMA effect were also investigated. It is found that the temperature dependences follow power laws of the saturation magnetization with an exponent of ~2. The significant VCMA effect observed in this work indicates that the Ru/CFA/MgO heterostructure could be one of the promising candidates for spintronic devices with voltage control.

cond-mat.mtrl-sci↗

arXiv2016

Vortex Dynamics-Mediated Low-Field Magnetization Switching in an Exchange-Coupled System

A magnetic vortex has attracted significant attention since it is a topologically stable magnetic structure in a soft magnetic nanodisk. Many studies have been devoted to understanding the nature of magnetic vortex in isolated systems. Here we show a new aspect of a magnetic vortex the dynamics of which strongly affects the magnetic structures of environment. We exploit a nanodot of an exchange-coupled bilayer with a soft magnetic Ni81Fe19 (permalloy; Py) having a magnetic vortex and a perpendicularly magnetized L10-FePt exhibiting a large switching field (Hsw). The vortex dynamics with azimuthal spin waves makes the excess energy accumulate in the Py, which triggers the reversed-domain nucleation in the L10-FePt at a low magnetic field. Our results shed light on the non-local mechanism of a reversed-domain nucleation, and provide with a route for efficient Hsw reduction that is needed for ultralow-power spintronic devices.

cond-mat.mtrl-sci↗

arXiv2015

Roadmap for Emerging Materials for Spintronic Device Applications

The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain-wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) magnetic materials and (vii) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used for example as a cell for a magnetic random access memory and spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarised electrons efficiently into a non-magnet. We have accordingly identified 2 key properties to be achieved by developing new magnetic materials for future spintronic devices: (1) Half-metallicity at room temperature (RT); (2) Perpendicular anisotropy in nano-scale devices at RT. For the first property, 5 major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: Heusler alloys, ferrites, rutiles, perovskites and dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level EF only for its minority spins, achieving 100% spin polarisation at EF. We have also evaluated L10-alloys and D022-Mn-alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarisation. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations and interdisciplinary applications within 35 years time scale.

cond-mat.mtrl-sci↗

arXiv2015

Proximity-free enhancement of anomalous Nernst effects in metallic multilayers

The anomalous Nernst effect (ANE) has been investigated in alternately-stacked multilayer films comprising paramagnetic and ferromagnetic metals. We found that the ANE is enhanced with increasing the number of the paramagnet/ferromagnet interfaces with keeping the total thickness of the films constant, and that the enhancement appears even in the absence of magnetic proximity effects; similar behavior was observed not only in Pt/Fe multilayers but also in Au/Fe and Cu/Fe multilayers free from proximity ferromagnetism. This universal enhancement of the ANE in the metallic multilayers suggests the presence of unconventional interface-induced thermoelectric conversion in the Fe films attached to the paramagnets.

cond-mat.mtrl-sci↗