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Tanguy Terlier

Publications and source records attributed to Tanguy Terlier.

3 recordsLinked to original sources

Multi-scale reconstruction of single-ion damage tracks in diamond via nitrogen-vacancy centers

Understanding particle-induced damage tracks in solid-state materials underpins emerging applications in rare-event detection and quantum defect engineering. Resolving these tracks requires multi-scale readout, from event localization at the millimeter scale to track-morphology reconstruction at the nanoscale. Nitrogen-vacancy (NV) centers in diamond provide such a platform, combining optical localization with quantum sensing of track morphology. Here, we implant sub-MeV carbon ions into nitrogen-rich diamond and detect individual recoil events via spatially localized NV formation. We develop a simulation framework that explains the observed NV yield and predicts that directional information is retained in the NV distribution after annealing. Machine learning further recovers much of the information lost to defect diffusion and limited NV yield, improving head-tail classification to a level comparable to pre-annealed vacancy tracks. Measurements of NV spin coherence indicate compatibility with nanoscale track reconstruction via NV strain mapping and magnetic gradient-based techniques. These results identify promising pathways toward NV-diamond directional detectors for rare events, while the track-modeling framework has broader implications for paleodetection and quantum material synthesis.

physics.ins-det

Room-Temperature High-Purity Single Photon Emission from Carbon-Doped Boron Nitride Thin Films

Hexagonal boron nitride (hBN) has emerged as an excellent host material for generating room temperature single photons exhibiting high brightness and spin-photon entanglement. However, challenges in improving purity, stability, and scalability limit its use in quantum technologies. Here, we demonstrate highly pure and stable single photon emitters (SPEs) in hBN by directly growing carbon-doped, centimeter-scale hBN thin films using the pulsed laser deposition (PLD) method. These SPEs exhibit room temperature operation with polarized emission, achieving a g(2)(0) value of 0.015, which is among the lowest reported for room temperature SPEs and the lowest achieved for hBN SPEs. It also exhibits high brightness ( around 0.5 million counts per second), remarkable stability during continuous operation (> 15 minutes), and a Debye-Waller factor of 45%. First-principles calculations reveal unique carbon defects responsible for these properties, enabled by PLD's low-temperature synthesis and in-situ doping. Our results demonstrate an effective method for large-scale production of high-purity, stable SPEs in hBN, enabling robust quantum optical sources for various applications.

physics.app-ph

Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) remain a topic of immense interest. Specifically, given their low operational switching costs, they find many niche applications in new computing architectures with the promise of continued miniaturization. However, challenges lie in Back End of Line (BEOL) integration temperature and time compliance regarding current requirements for crystal growth. Additionally, deleterious and time-consuming transfer processes and multiple steps involved in channel/contact engineering can cripple device performance. This work demonstrates kinetics-governed in-situ growth regimes (surface or edge growth from gold) of WSe2 and provides a mechanistic understanding of these regimes via energetics across various material interfaces. As a proof-of-concept, field effect transistors (FET) with an in-situ grown WSe2 channel across Au contacts are fabricated, demonstrating a 2D semiconductor transistor via a transfer-free method within the 450-600 C 2h-time window requirement BEOL integration. We leverage directional edge growth to fabricate contacts with robust thickness-dependent Schottky-to-Ohmic behavior. By transitioning between Au and SiO2 growth substrates in situ, this work achieves strain-induced subthreshold swing of 140 mV/decade, relatively high mobility of 107 +- 19 cm2V-1s-1, and robust ON/OFF ratios 10^6 in the fabricated FETs.

cond-mat.mtrl-sci