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Tanima Chanda

Publications and source records attributed to Tanima Chanda.

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Screening-controlled dynamical criticality in the quantum Hall regime

At continuous electronic phase transitions, Coulomb interactions can modify the relation between length, energy, and temperature, but experimentally disentangling their effects on spatial versus dynamical criticality has remained difficult, since finite-temperature scaling alone measures only the combined exponent $\kappa = 1/(z\gamma)$. Here, we introduce two advances that resolve this limitation. First, by combining temperature scaling with independent current scaling, we separately extract the dynamical exponent $z$ and the localization-length exponent $\gamma$ at the quantum Hall plateau transition -- rather than inferring one from an assumed value of the other. Second, using dual-graphite-gated graphene devices in which the effective Coulomb interaction range is tuned geometrically by the ratio of the magnetic length $l_B$ to the graphite-gate distance $d$, we track this separation across both screened and unscreened interaction regimes within the same device platform. Temperature scaling gives $\kappa \simeq 0.21$ in the screened regime and $\kappa \simeq 0.41$ in the unscreened regime; combining this with current scaling reveals that screening changes $z$ from $\simeq 1$ in the unscreened regime to $\simeq 2$ in the screened regime. In contrast, $\gamma$ remains close to $2.4$ throughout. Our results establish that gate-controlled screening selectively modifies the interaction-dependent dynamical sector of the quantum Hall transition, leaving the localization-length exponent $\gamma$ unchanged within experimental uncertainty. More broadly, this work establishes geometric screening as a versatile tool for controlling interactions and disentangling interaction and disorder effects in correlated two-dimensional systems, including fractional quantum Hall states, moir\'e materials, and other strongly localized electronic phases.

cond-mat.mes-hall

Even-denominator fractional quantum Hall states in the zeroth Landau level of ABA trilayer graphene

Even-denominator fractional quantum Hall states (FQHSs) at half filling are of particular interest because they can host non-Abelian quasiparticles. Here we report the emergence of such states in the zeroth Landau level ($N=0$) of ABA trilayer graphene (TLG), challenging the conventional expectation that they are confined to the first excited Landau level. We observe robust incompressible states at $\nu=7/2$, $9/2$, and $5/2$ with their associated Levin--Halperin daughter states: $\nu=59/17$ and $46/13$ near $7/2$; $\nu=58/13$ and $77/17$ near $9/2$; and $\nu=43/17$ near $5/2$. These states appear exclusively within a finite displacement-field window coincident with crossings between symmetry-broken $N=0$ Landau levels carrying distinct isospin indices. The quantitative correspondence between the calculated crossing loci and the experimentally determined stability regions identifies Landau-level mixing as the microscopic origin. We attribute the stabilization of these even-denominator states to inversion-symmetry breaking in TLG, which enhances valley-resolved Landau-level hybridization and renormalizes short-range Coulomb interactions. Our results expand the landscape of even-denominator FQHSs to multilayer graphene and establish TLG as a tunable platform for realizing non-Abelian anyons.

cond-mat.mes-hall

Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes

Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent $\kappa = 0.41 \pm 0.02$ and localization length exponent $\gamma = 2.4 \pm 0.2$ for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent $z\approx 1$. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of $\kappa$ in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.

cond-mat.mes-hall