arXiv subjects

Taran Anusorn

Publications and source records attributed to Taran Anusorn.

4 recordsLinked to original sources

arXiv2026

Q-Enhanced SH-SAW Ladder Filter in Thin-Film Lithium Tantalate Using Bartlett Apodization

Shear-horizontal surface acoustic wave (SH-SAW) filters have shown strong potential for low-loss, compact, GHz-frequency RF front ends. In this work, we demonstrate a high-performance SH-SAW filter design at 4.35 GHz utilizing 42{\deg}Y-cut thin-film lithium tantalate (LiTaO3) on a SiO2/Si platform. Despite the limitations of thin aluminum metallization and its associated ohmic losses, we show that implementing a Bartlett window apodization technique, primarily intended for in-band spurious-mode suppression, yields a significantly improved quality factor (Q) of 1,522 from 688 in conventional interdigitated SH-SAW resonators. This enhancement enables a third-order ladder filter at 4.3 GHz with an insertion loss of 1.59 dB, compared with 1.65 dB for a conventional SH-SAW filter. In addition, our filter with apodized resonator designs achieves a 3 dB fractional bandwidth (FBW) of 3.24% and out-of-band rejection exceeding 14 dB, all within a compact footprint of 0.4 mm2. These results suggest that apodized thin-film LiTaO3 designs are highly promising for low-loss, miniaturized, cost-effective radio frequency acoustic solutions in next-generation communication and sensing applications.

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arXiv2026

Nonlinear Characterization of Thin-Film LiNbO3 Acoustic Filters

Compact, high-performance components in millimeter-wave (mmWave) communication systems demand new acoustic filter technology at increasingly higher frequencies. Among various promising mmWave platforms, first-order antisymmetric (A1) mode laterally excited bulk acoustic resonators (XBARs) in thin-film lithium niobate (LiNbO3) have perhaps the most impressive linear performance. Despite these advances, there are few reports of nonlinear characterization of LiNbO3 filters at mmWaves. Here, we address this gap by developing a new nonlinear methodology for high-frequency filters. The result is a methodology for performing power-dependent S-parameters and third-order intermodulation (IMD3) measurements. To test our methodology, we fabricated filters on transferred single-crystal LiNbO3 films on sapphire (Al2O3) and silicon (Si) substrates with amorphous silicon (aSi) sacrificial layer. At 21.8 GHz, the filters on Al2O3 demonstrated an insertion loss of 1.48 dB, a 3 dB fractional bandwidth (FBW) of 17.7%, and in-band third-order input intercept points (IIP3) of 50.8 dBm. At 21.6 GHz, the filters on silicon demonstrated an insertion loss of 2.47 dB, a 3 dB FBW of 18.6%, and in-band IIP3 of 46.5 dBm. The nonlinear results conclusively show that thermal stability and passband distortion improved on the Al2O3 substrate, confirming that substrate selection plays a pivotal role in mitigating nonlinearity in acoustic front-end modules.

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arXiv2026

Lattice XBAR Filters in Thin-Film Lithium Niobate

This work presents the demonstration of lattice filters based on laterally excited bulk acoustic resonators (XBARs). Two filter implementations, namely direct lattice and layout-balanced lattice topologies, are designed and fabricated in periodically poled piezoelectric film (P3F) thin-film lithium niobate (TFLN). By leveraging the strong electromechanical coupling of XBARs in P3F TFLN together with the inherently wideband nature of the lattice topology, 3-dB fractional bandwidths (FBWs) of 27.42\% and 39.11\% and low insertion losses (ILs) of 0.88 dB and 0.96 dB are achieved at approximately 20 GHz for the direct and layout-balanced lattice filters, respectively, under conjugate matching. Notably, all prototypes feature compact footprints smaller than 1.3 mm\textsuperscript{2}. These results highlight the potential of XBAR-based lattice architectures to enable low-loss, wideband acoustic filters for compact, high-performance RF front ends in next-generation wireless communication and sensing systems, while also identifying key challenges and directions for further optimization.

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arXiv2025

Practical Demonstrations of FR3-Band Thin-Film Lithium Niobate Acoustic Filter Design

This article presents an approach to control the operating frequency and fractional bandwidth (FBW) of miniature acoustic filters in thin-film lithium niobate (TFLN). More specifically, we used first-order antisymmetric (A1) mode lateral-field-excited bulk acoustic wave resonators (XBARs) to achieve efficient operation at 20.5 GHz. Our technique leverages the thickness-dependent resonant frequency of A1 XBARs, combined with the in-plane anisotropic properties of 128$^\circ$ Y-cut TFLN, to customize filter characteristics. The implemented three-element ladder filter prototype achieves an insertion loss (IL) of only 1.79 dB and a controlled 3-dB FBW of 8.58% at 20.5 GHz, with an out-of-band (OoB) rejection greater than 14.9 dB across the entire FR3 band, while featuring a compact footprint of 0.90 $\times$ 0.74 mm2. Moreover, an eight-element filter prototype shows an IL of 3.80 dB, an FBW of 6.12% at 22.0 GHz, and a high OoB rejection of 22.97 dB, demonstrating the potential for expanding to higher-order filters. As frequency allocation requirements become more stringent in future FR3 bands, our technique showcases promising capability in enabling compact and monolithic filter banks toward next-generation acoustic filters for 6G and beyond.

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