arXiv subjects

Tarun Patel

Publications and source records attributed to Tarun Patel.

9 recordsLinked to original sources

arXiv2026

Deterministic nanofabrication for engineering nanowire quantum dot devices

Semiconductor quantum dots (QDs) are a leading platform for realising bright, wavelength-tunable sources of single and entangled photon pairs for photonic quantum technologies. Site-selected nanowire quantum dots (NWQDs) are a promising platform for fabricating such photonic devices in a scalable manner. However, implementing additional structures around the photonic nanowire while maintaining its vertical growth geometry has remained a challenge. In this work, we develop a deterministic pick-and-place technique to conduct a vertical-to-vertical transfer of NWQDs from the growth substrate to arbitrary templates. Using this transfer technique, we enhance the photon extraction efficiency to 75% by implementing a bottom gold mirror and tune the emission wavelength by 3.6 GHz via implementing electrostatic gates around the QD. Importantly, we measure low-multiphoton probability (g^(2)(0) = 0.002) and high indistinguishability (>80% for +/-100 ps) of the QD emission after the transfer process, yielding high-quality devices. These results demonstrate the repeatability and versatility of the developed transfer technique, which is an enabling step towards scalable single and entangled photon sources.

cond-mat.mes-hall↗

arXiv2026

Observation and Control of the Magnetic Photogalvanic Effect from Strongly Bound Excitons

Photogalvanic effects arising from the quantum geometry of noncentrosymmetric materials are promising for next-generation light-harvesting devices that do not require a built-in electric field. Recent theories predict photogalvanic currents generated in magnetic systems with spin-dependent symmetry breaking as well as by bound exciton states, allowing for potential magnetic field control of the photoresponse and enhanced detection of deep sub-gap signals, respectively. We demonstrate the magnetic photogalvanic effect in a bilayer CrI3 tunnel junction with both magnetic field switching and electric field tuning of interlayer symmetry. By controlling for the polarization and energy of light illumination, we disentangle the shift and injection current contributions and find that the peak response occurs under resonant excitation of strongly bound excitons in CrI3. Our results can be captured within a many-body framework of the photogalvanic effect, while our devices function as tunable, multispectral helicity- and polarization-sensitive detectors that highlight the potential of 2D magnets for future optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Macroscopic Tunneling Probe of Moir\'e Spin Textures in Twisted CrI$_3$

Various noncollinear spin textures and magnetic phases have been predicted in twisted two-dimensional CrI$_3$ due to competing ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange from moir\'e stacking - with potential spintronic applications even when the underlying material possesses a negligible Dzyaloshinskii-Moriya or dipole-dipole interaction. Recent measurements have shown evidence of coexisting FM and AFM layer order in small-twist-angle CrI$_3$ bilayers and double bilayers. Yet, the nature of the magnetic textures remains unresolved and possibilities for their manipulation and electrical readout are unexplored. Here, we use tunneling magnetoresistance to investigate the collective spin states of twisted double-bilayer CrI$_3$ under both out-of-plane and in-plane magnetic fields together with detailed micromagnetic simulations of domain dynamics based on magnetic circular dichroism. Our results capture hysteretic and anisotropic field evolutions of the magnetic states and we further uncover two distinct non-volatile spin textures (out-of-plane and in-plane domains) at $\approx$ 1{\deg} twist angle, with a different global tunneling resistance that can be switched by magnetic field.

cond-mat.mtrl-sci↗

arXiv2024

Gate-Tunable Multi-Band van der Waals Photodetector and Polarization Sensor

A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the combination of multiple material systems with different structures, bandgaps, and photoelectrical responses, which is extremely difficult to engineer using traditional epitaxial films. Here, we develop a multi-functional and high-performance photosensor using all van der Waals materials. The device features a gate-tunable spectral response that is switchable between near-infrared/visible and short-/mid-wave infrared, as well as broadband operation, at room temperature. The linear polarization sensitivity in the telecommunications O-band can also be directly modulated between horizontal, vertical, and nonpolarizing modes. These effects originate from the balance of photocurrent generation in two of the active layers that can be manipulated by an electric field. The photodetector features high detectivity (>109 cmHz1/2W-1) together with fast operation speed (~ 1 MHz) and can be further exploited for dual visible and infrared imaging.

physics.optics↗

arXiv2022

High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature

The ability to perform broadband optical spectroscopy with sub-diffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated tip-enhanced techniques are currently required to achieve this goal. We bypass this challenge by demonstrating an extremely broadband photodetector based on a two-dimensional (2D) van der Waals heterostructure that is sensitive to light across over a decade in energy from the mid-infrared (MIR) to deep-ultraviolet (DUV) at room temperature. The devices feature high detectivity (> 10^9 cm Hz^1/2 W^-1) together with high bandwidth (2.1 MHz). The active area can be further miniaturized to submicron dimensions, far below the diffraction limit for the longest detectable wavelength of 4.1 um, enabling such devices for facile measurements of local optical properties on atomic-layer-thickness samples placed in close proximity. This work can lead to the development of low-cost and high-throughput photosensors for hyperspectral imaging at the nanoscale.

physics.optics↗

arXiv2021

Observation and manipulation of a phase separated state in a charge density wave material

The 1T polytype of TaS$_\textrm{2}$ has been studied extensively as a strongly correlated system. As 1T-TaS$_\textrm{2}$ is thinned towards the 2D limit, its phase diagram shows significant deviations from that of the bulk material. Optoelectronic maps of ultrathin 1T-TaS$_\textrm{2}$ have indicated the presence of non-equilibrium charge density wave phases within the hysteresis region of the nearly commensurate (NC) to commensurate (C) transition. We perform scanning tunneling microscopy on exfoliated ultrathin flakes of 1T-TaS$_\textrm{2}$ within the NC-C hysteresis window, finding evidence that the observed non-equilibrium phases consist of intertwined, irregularly shaped NC-like and C-like domains. After applying lateral electrical signals to the sample we image changes in the geometric arrangement of the different regions. We use a phase separation model to explore the relationship between electronic inhomogeneity present in ultrathin 1T-TaS$_\textrm{2}$ and its bulk resistivity. These results demonstrate the role of phase competition morphologies in determining the properties of 2D materials.

cond-mat.mes-hall↗

arXiv2021

Infrared imaging of samples in ultra high pressure diamond anvil cells

We describe an experimental platform that generates infrared images of micrometer-sized samples in the high pressure region of a diamond anvil cell. Using a 2.3 micron laser as a source of radiation, the system will be particularly useful in identifying hydride superconductors which exhibit an anomalous temperature dependence of reflectivity in the 2.3 micron region. Our system shows an intensity stability within one percent when the sample temperature is swept from 100 K to 300 K. The spatial stability is of the order of a few micrometers in the same temperature range.

cond-mat.supr-con↗

arXiv2020

Photocurrent Imaging of Multi-Memristive Charge Density Wave Switching in Two-Dimensional 1T-TaS2

Transport studies of atomically thin 1T-TaS2 have demonstrated the presence of intermediate resistance states across the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition, which can be further switched electrically. While this presents exciting opportunities for the material in memristor applications, the switching mechanism has remained elusive and could be potentially attributed to the formation of inhomogeneous C and NC domains across the 1T-TaS2 flake. Here, we present simultaneous electrical driving and scanning photocurrent imaging of CDWs in ultrathin 1T-TaS2 using a vertical heterostructure geometry. While micron-sized CDW domains form upon changing temperature, electrically driven transitions result in largely uniform changes, indicating that states of intermediate resistance for the latter likely correspond to true metastable CDW states in between the NC and C phases, which we then explain by a free energy analysis. Additionally, we are able to perform repeatable and bidirectional switching across the multiple CDW states without changing sample temperature, demonstrating that atomically thin 1T-TaS2 can be further used as a robust and reversible multi-memristor material.

cond-mat.mtrl-sci↗

arXiv2018

One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure

We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 Tesla field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI3 layers. Our results elucidate the nature of the magnetic state in ultrathin CrI3 and present new opportunities for spintronics based on two-dimensional materials.

cond-mat.mtrl-sci↗