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Tatiana G. Rappoport

Publications and source records attributed to Tatiana G. Rappoport.

At least 19 recordsLinked to original sources

Real-Space Spectral Approach to Orbital Magnetization

We present a real-space spectral method for computing the orbital magnetization of crystals. Starting from the commutator form of the orbital magnetization operator, we formulate an energy-resolved spectral function that is amenable to exact Chebyshev polynomial expansions and yields the total magnetization upon integration up to the Fermi level. This avoids the need for computing eigenstates and ground-state projects, providing an efficient numerical framework that is applicable to very large systems even in the presence of disorder and temperature. Our approach is benchmarked on the Haldane model, finding results that are in excellent agreement with the modern $k$-space formulation of orbital magnetization. Leveraging this technique, we extend our study to systems with uncorrelated disorder and point defects, and further show that the bulk Chern number can be directly obtained from the magnetization spectral density. These results open a promising route to investigate orbital responses and topological transitions in real-space models of quantum materials with realistic complexity.

cond-mat.mes-hall↗

Symmetry Analysis of the Non-Hermitian Electro-Optic Effect in Crystals

Here, we investigate how crystal symmetry tailors the non-Hermitian electro-optic effect arising from the Berry curvature dipole. Specifically, we demonstrate the critical influence of the material's point group symmetry and external electric biases in shaping this effect, leading to current-induced optical gain and non-reciprocal optical responses. Through a symmetry-based analysis of the crystallographic point groups, we identify how different symmetries affect the electro-optic response, enabling the engineering of polarization-dependent optical gain without the need for gyrotropic effects. In particular, we demonstrate that the non-Hermitian electro-optic response in a broad class of crystals is characterized by linear dichroic gain. In this type of response, the eigenpolarizations that activate the gain or dissipation are linearly polarized. Depending on the point group symmetry, it is possible to achieve gain (or dissipation) for all eigenpolarizations or to observe polarization-dependent gain and dissipation. Weyl semimetals emerge as promising candidates for realizing significant non-Hermitian electro-optic effects and linear dichroic gain. We further examine practical applications by studying the reflectance of biased materials in setups involving mirrors, demonstrating how optical gain and attenuation can be controlled via symmetry and bias configurations.

cond-mat.mes-hall↗

Staggered orbital magnetization from itinerant electrons: orbital antiferro- and ferrimagnetic phases

Because electronic orbital angular momentum in solids is inherently non-local, its contribution to magnetism is usually cast in terms of a net orbital magnetization. Here, we show that itinerant electrons can generate orbital magnetic phases with ferromagnetic, antiferromagnetic, or ferrimagnetic orders. We demonstrate this possibility in a honeycomb lattice, using both the standard and a modified Haldane model. Employing real-space formulations, we decompose the itinerant orbital magnetization into sublattice contributions, $M_A$ and $M_B$. Their net ($M_z=M_A+M_B$) and staggered ($M_z^s=M_A-M_B$) combinations are then used to identify the orbital order. By varying the sublattice potential and the Fermi energy, we find distinct regimes: a (PT)-symmetric orbital antiferromagnet in the modified Haldane model, an orbital ferromagnet in the standard Haldane model, ferrimagnetic metallic states where net and staggered orbital magnetizations coexist, and insulating regimes in which the ferro- and antiferromagnetic orbital characters can be interchanged. These findings are explained by a low-energy theory in terms of two distinct valley mechanisms: valley-dependent Dirac masses in the standard Haldane model and valley-dependent energy shifts in its modified version.

cond-mat.mes-hall↗

Orbital Hall effect from orbital magnetic moments of Bloch states: the role of a new correction term

We present a rigorous derivation of the matrix elements of the orbital magnetic moment (OMM) of Bloch states. Our calculations include the Berry connection term in the k-derivatives of Bloch states, which was omitted in previous works. The resulting formula for the OMM matrix elements applies to any non-degenerate Bloch states within Hilbert space. We identify two new contributions: the first restores gauge covariance for non-degenerate states, while the second, being itself gauge covariant, can provide significant quantitative corrections depending on the system under study. We examine their impact on the orbital Hall effect in two bilayer systems: a 2H transition metal dichalcogenide bilayer and a biased bilayer graphene. In both cases, these new terms reduce the orbital Hall conductivity plateau compared with results that neglect them, suggesting that multi-layered van der Waals materials may be particularly susceptible to the derived OMM corrections. Our findings may contribute to the formal understanding of electronic OMM transport and to the conceptual foundations of the emerging field of orbitronics.

cond-mat.mes-hall↗

Real-space first-principles approach to orbitronic phenomena in metallic multilayers

We develop a real-space first-principles method based on density functional theory to investigate orbitronic phenomena in complex materials. Using the Real-Space Linear Muffin-Tin Orbital method within the Atomic Sphere Approximation (RS-LMTO-ASA) combined with a Chebyshev polynomial expansion of the Green's functions, we compute orbital (spin) Hall transport and orbital (spin) accumulation directly in real space. The approach scales linearly with system size and naturally incorporates disorder, finite-size effects, and interface roughness. We apply the method to transition-metal-based heterostructures and demonstrate the emergence of substantial orbital (spin) accumulation, even in centrosymmetric systems. Our methodology provides a scalable and flexible framework for realistic simulations of orbital transport phenomena in complex heterostructures.

cond-mat.mtrl-sci↗

Extrinsic Orbital Hall Effect and Orbital Relaxation in Mesoscopic Devices

Despite recent advances in orbitronics, the influence of disorder on the orbital Hall effect and orbital relaxation mechanisms remains poorly understood. In this work, we numerically investigate the role of disorder in orbital transport within mesoscopic devices using a real-space tight-binding model on a two-dimensional square lattice that hosts atomic orbitals capable of carrying atomic orbital angular momentum. By considering devices with varying geometries--square and rectangular--and systematically tuning disorder strength, we examine the disorder effect on orbital Hall current (OHC) generation, and orbital relaxation. Our results reveal a strong dependence of the OHC and orbital Hall angle on disorder strength. In square devices, we demonstrate that the orbital Hall response can be strongly enhanced by disorder and its dependence on the disorder strength indicates the dominance of skew-scattering mechanism in the diffusive regime. In rectangular geometries, the orbital current decays exponentially with increasing device width, from which the orbital relaxation length is extracted. These findings provide critical insights into disorder-driven orbital transport phenomena and lay the foundation for designing next-generation orbitronic devices.

cond-mat.mes-hall↗

Orbitronics in Two-dimensional Materials

Orbitronics explores the control and manipulation of electronic orbital angular momentum in solid-state systems, opening new pathways for information processing and storage. One significant advantage of orbitronics over spintronics is that it does not rely on spin-orbit coupling, thereby broadening the range of non-magnetic materials that can be utilized for these applications. It also introduces new topological features related to electronic orbital angular momentum, and clarifies some long-standing challenges in understanding experiments that rely on the conventional concept of valley transport. This review highlights recent advances in orbitronics, particularly in relation to two-dimensional materials. We examine the fundamental principles underlying the generation, transport, and dynamics of orbital angular momentum to illustrate how the unique properties of two-dimensional materials can promote orbitronic phenomena. We also outline potential future research directions and address some outstanding questions in this field.

cond-mat.mes-hall↗

Extrinsic Orbital Hall Effect: Orbital Skew Scattering and Crossover Between Diffusive and Intrinsic Orbital Transport

Despite the recent success of identifying experimental signatures of the orbital Hall effect (OHE), the research on the microscopic mechanisms behind this unique phenomenon is still in its infancy. Here, using a gapped 2D Dirac material as a model system of the OHE, we develop a microscopic theory of orbital transport which captures extrinsic disorder effects non-perturbatively. We show that it predicts several hitherto unknown effects, including (i) a strong dependence of the orbital Hall conductivity with the strength and symmetry of the impurity scattering potential, and (ii) a smooth crossover from intrinsic to extrinsic OHE as a function of the Fermi energy and impurity density. In contrast to previous (perturbative) studies, the OHE is found to exhibit bona fide diffusive behavior in the dilute impurity limit, which we trace back to the dominance of skew scattering-type processes. More generally, we argue that the newly unveiled orbital skew scattering mechanism governs the diffusive OHEs of a large class of 2D materials even when the crystal structure is inversion-symmetric. Our work unveils the crucial nature of non-perturbative vertex corrections for a complete description of orbital transport and confirms common short-range impurities as key enablers of the OHE.

cond-mat.mes-hall↗

Broadband High-Performance Terahertz Polarizers by Nanoimprint Lithography for Advanced Applications

Terahertz polarizers are essential for advanced spectroscopic systems but face challenges like low transmission, short bandwidths and low extinction ratios. This study demonstrates the development of ultrabroadband THz polarizers using nanoimprint lithography, achieving high performance through double-wire-grid polarizer (DWGP) structures on cyclic olefin copolymer (COC) substrates. Compared to silicon-based alternatives, the polymer DWGPs demonstrated over twice the TM-polarized transmittance across the 0.1 - 25 THz range. The degree of polarization exceeded 98% in a 0.1-16 THz range, with a maximum extinction ratio above 65.4 dB at 4.2 THz. Simultaneous characterization of materials using THz time-domain spectroscopy (THz-TDS) and Fourier-transform infrared spectroscopy (FTIR) covered extended frequency ranges of 0.1 - 40 THz and 0.9 - 20 THz, respectively. Nanofabricated polymer DWGP revealed the superior optical properties, including enhanced TM transmittance and reduced TE leakage when compared to Si DWGP. Additionally, the fabricated polymer polarizers showcased cost-effectiveness, scalability, and durability, offering a sustainable alternative to conventional Si-based polarizers. The significant developments demonstrated in this study position polymer-based DWGPs as significant components for THz imaging, sensing, and wireless communication systems, paving the way for next-generation technologies.

physics.optics↗

Symmetry-Based Classification of Chern Phases in Honeycomb Photonic Crystals

In this work, we develop a symmetry-based classification of Chern phases in honeycomb photonic crystals, considering arbitrary nonreciprocal couplings compatible with energy conservation. Our analysis focuses on crystals formed through nonreciprocal perturbations of photonic graphene. These perturbations, which can have arbitrary spatial variations, are generally described by scalar and vector fields. Using a tight-binding model, we consider the most general nonreciprocal interactions, including gyromagnetic, pseudo-Tellegen, and moving medium responses, and examine how the corresponding nonreciprocal fields influence the crystal's topology. Our findings reveal that nonreciprocal interactions alone are insufficient to induce a topologically nontrivial phase. Instead, a nontrivial p6m component in the nonreciprocal fields is required to open a bandgap and achieve a non-zero Chern number. These results provide a symmetry-based roadmap for engineering photonic topological phases via nonreciprocal perturbations of photonic graphene, offering practical guidelines for designing topological phases in graphene-like photonic crystals.

physics.optics↗

Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime

We study the orbital Hall effect (OHE) in the AC regime using bilayer graphene (BLG) as a prototypical material platform. While the unbiased BLG has gapless electronic spectra, applying a perpendicular electric field creates an energy band gap that can be continuously tuned from zero to high values. By exploiting this flexibility, we demonstrate the ability to control the behavior of AC orbital Hall conductivity. Particularly, we demonstrate that the orbital Hall conductivity at the neutrality point changes its signal at a critical frequency, the value of which is proportional to the perpendicular electric field. For BLG with narrow band gaps, the active frequency region for the AC OHE may extend to a few terahertz, which is experimentally accessible with current technologies. We also consider the introduction of a perpendicular magnetic field in the weak coupling regime using first-order perturbation theory to illustrate how the breaking of time-reversal symmetry enables the emergence of AC charge Hall effect in the charge-doped situation and modifies the AC orbital Hall conductivity. Our calculations suggest that BLG with narrow bandgaps is a practical candidate for investigating time-dependent orbital angular momentum transport.

cond-mat.mes-hall↗

Transport of orbital currents in systems with strong intervalley coupling: the case of Kekulé distorted graphene

We show that orbital currents can describe the transport of orbital magnetic moments of Bloch states in models where the formalism based on valley current is not applicable. As a case study, we consider Kekulé distorted graphene. We begin by analyzing the band structure in detail and obtain the orbital magnetic moment operator for this model within the framework of the modern theory of magnetism. Despite the simultaneous presence of time-reversal and spatial-inversion symmetries, such operator may be defined, although its expectation value at a given energy is zero. Nevertheless, its presence can be exposed by the application of an external magnetic field. We then proceed to study the transport of these quantities. In the Kekulé-$O$ distorted graphene model, the strong coupling between different valleys prevents the definition of a bulk valley current. However, the formalism of the orbital Hall effect together with the non-Abelian description of the magnetic moment operator can be directly applied to describe its transport in these types of models. We show that the Kekulé-$O$ distorted graphene model exhibits an orbital Hall insulating plateau whose height is inversely proportional to the energy band gap produced by intervalley coupling. Our results strengthen the perspective of using the orbital Hall effect formalism as a preferable alternative to the valley Hall effect

cond-mat.mes-hall↗

Non-Hermitian Linear Electrooptic Effect in 3D materials

Here, we present an in-depth theoretical analysis of the linear electrooptic effect in low-symmetry three-dimensional (3D) conductive materials with large Berry curvature dipoles. Our study identifies two distinct kinetic contributions to the linear electrooptic effect: a gyrotropic Hermitian (conservative) piece and a non-Hermitian term that can originate optical gain. We concentrate on the study of 3D materials belonging to the 32 ($D_3$) point group subject to a static electric bias along the trigonal axis. Our investigation shows that doped trigonal tellurium has promising properties, with its gyrotropic electrooptic response offering the potential for realizing electrically-biased electromagnetic isolators and inducing significant optical dichroism. Most notably, it is demonstrated that under sufficiently large static electric bias, tellurium's non-Hermitian electrooptic response may lead to optical gain. Using first-principles calculations, it is shown that n-doped tellurium is particularly promising, as it can host significantly larger Berry curvature dipoles than the more common p-doped tellurium.

physics.optics↗

Non-Hermitian Photonic Spin Hall Insulators

Photonic platforms invariant under parity ($\mathcal{P}$), time-reversal ($\mathcal{T}$), and duality ($\mathcal{D}$) can support topological phases analogous to those found in time-reversal invariant ${\mathbb{Z}_2}$ electronic systems with conserved spin. Here, we demonstrate the resilience of the underlying spin Chern phases against non-Hermitian effects, notably material dissipation. We identify that non-Hermitian, $\mathcal{P}\mathcal{D}$-symmetric, and reciprocal photonic insulators fall into two topologically distinct classes. Our analysis focuses on the topology of a $\mathcal{P}\mathcal{D}$-symmetric and reciprocal parallel-plate waveguide (PPW). We discover a critical loss level in the plates that marks a topological phase transition. The Hamiltonian of the $\mathcal{P}\mathcal{T}\mathcal{D}$-symmetric system is found to consist of an infinite direct sum of Kane-Mele type Hamiltonians with a common band gap. This structure leads to the topological charge of the waveguide being an ill-defined sum of integers due to the particle-hole symmetry. Each component of this series corresponds to a spin-polarized edge state. Our findings present a unique instance of a topological photonic system that can host an infinite number of edge states in its band gap.

physics.optics↗

Chiral terahertz lasing with Berry curvature dipoles

Materials with Berry curvature dipoles (BDs) support a non-Hermitian electro-optic (EO) effect that is investigated here for lasing at terahertz (THz) frequencies. Such a system is here conceived as a stack of low-symmetry 2D materials. We show that a cavity made of such a material supports a nonreciprocal growing mode with elliptical polarization that generates an unstable resonance leading to self-sustained oscillations. Notably, we demonstrate that the chiral nature of the gain derived from the Berry dipole allows for the manipulation of the laser light's handedness by a simple reversal of the electric field bias.

physics.optics↗

Orbital Hall effect and topology on a two-dimensional triangular lattice: from bulk to edge

We investigate a generalized multi-orbital tight-binding model on a triangular lattice, a system prevalent in a wide range of two-dimensional materials, and particularly relevant for simulating transition metal dichalcogenide monolayers. We show that the interplay between spin-orbit coupling and different symmetry-breaking mechanisms leads to the emergence of four distinct topological phases [Eck, P., \textit{et al.}, Phys. Rev. B, 107 (11), 115130 (2023)]. Remarkably, this interplay also triggers the orbital Hall effect with distinguished characteristics. Furthermore, by employing the Landauer-Büttiker formula, we establish that in the orbital Hall insulating phase, the orbital angular momentum is carried by edge states present in nanoribbons with specific terminations. We also show that, as expected, they do not have topological protection against the disorder of the edge states belonging to a first-order topological insulator.

cond-mat.mes-hall↗

Ultrathin films of black phosphorus as suitable platforms for unambiguous observation of the orbital Hall effect

Phosphorene, a monolayer of black phosphorus, is a two-dimensional material that lacks a multivalley structure in the Brillouin zone and has negligible spin-orbit coupling. This makes it a promising candidate for investigating the orbital Hall effect independently of the valley or spin Hall effects. To model phosphorene, we utilized a DFT-derived tight-binding Hamiltonian, which is constructed with the pseudo atomic orbital projection method. For that purpose, we use the PAOFLOW code with a newly implemented internal basis that provides a fairly good description of the phosphorene conduction bands. By employing linear response theory, we show that phosphorene exhibits a sizable orbital Hall effect with strong anisotropy in the orbital Hall conductivity for the out-of-plane orbital angular momentum component. The magnitude and sign of the conductivity depend upon the in-plane direction of the applied electric field. These distinctive features enable the observation of the orbital Hall effect in this material unambiguously. The effects of strain and of a perpendicularly applied electric field on the phosphorene orbital-Hall response are also explored. We show that a supplementary electric field applied perpendicular to the phosphorene layer in its conductive regime gives rise to an induced in-plane orbital magnetization.

cond-mat.mes-hall↗

Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides

Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTI), protected by $C_3$ rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD monolayers in two structural phases: the noncentrosymmetric 2H and the centrosymmetric 1T. Using density functional theory, we confirm the characteristics of 2H-TMDs and reveal that 1T-TMDs are identified by a $\mathbb{Z}_4$ topological invariant. As a result, when cut along appropriate directions, they host conducting edge-states, which cross their bulk energy-band gaps and can transport orbital angular momentum. Our linear response calculations thus indicate that the HOTI phase is accompanied by an orbital Hall effect. Using general symmetry arguments, we establish a connection between the two phenomena with potential implications for spin-orbitronics.

cond-mat.mes-hall↗