arXiv subjects

Tatiana V. Pavlova

Publications and source records attributed to Tatiana V. Pavlova.

5 recordsLinked to original sources

arXiv2026

STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)

The objective of miniaturizing doped areas in silicon, with the ultimate goal of achieving atomic-precision doping, requires a fundamental understanding of the dopant incorporation process at the atomic level. We present a combined scanning tunneling microscopy (STM) and density functional theory (DFT) investigation of single phosphorus atom incorporation into the Si(100) surface. Phosphorus was supplied via PBr3 molecules, which completely dissociate on Si(100) at room temperature. By performing in situ annealing within the STM, we directly tracked the same phosphorus atom before and after heating. Upon annealing, the P atom undergoes an exchange with a nearby Si atom, forming a stable P-Si-Br complex with a Br atom located atop the Si atom of the heterodimer. The activation barrier calculated using DFT is consistent with our observation of doping starting at temperatures as low as 175 C. These results provide detailed atomic-scale insight into the phosphorus incorporation pathway and offer a foundation for improving methods of precise, single-atom doping in silicon.

cond-mat.mtrl-sci↗

arXiv2025

PBr3 Adsorption and Dissociation on the Si(100) Surface

The adsorption of PBr3 on the Si(100)-2$\times$1 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissociates on the Si(100) surface at room temperature into P and Br atoms. In most cases, the dissociated molecule was observed in STM on three neighboring Si dimers. DFT calculations confirm that the PBr3 molecule can completely dissociate at room temperature. After annealing the sample to 400$^{\circ}$C, phosphorus is incorporated into silicon, as evidenced by the Si atoms ejected to the surface. These findings are useful for the insertion of individual phosphorus atoms into silicon by PBr3 adsorption through a halogen mask.

cond-mat.mtrl-sci↗

arXiv2025

Roadmap on Atomic-scale Semiconductor Devices

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.

quant-ph↗

arXiv2019

First-Principle Study of Adsorption and Desorption of Chlorine on Cu(111) Surface. Does Chlorine or Copper Chloride Desorb?

First-principle density-functional calculations have been applied to study the interaction of molecular chlorine with the (111) plane of copper. Using transition-state search method, we considered the elementary processes (Cl$_2$ dissociation, adsorption, diffusion, association and desorption) on the chlorinated Cu(111) surface. A systematic study of possible desorption pathways has been carried out for different species (Cl, Cl$_2$, CuCl, CuCl$_2$, and Cu) at various chlorine coverage. As a result, we concluded that chlorine monolayer irrespective of the coverage desorbs in the form of CuCl molecules from step edges.

physics.chem-ph↗

arXiv2019

First-Principle Study of Phosphine Adsorption on Si(001)-2$\times$1-Cl

This paper presents a DFT study for phosphine adsorption on a Si(001)-2$\times$1 surface covered by a chlorine monolayer, including adsorption on local defects, i.e. mono- and bivacancies in the adsorbate layer (Cl, Cl$_2$), and combined vacancies with removed silicon atoms (SiCl, SiCl$_2$). Activation barriers were found for the adsorbing PH$_3$ to dissociate into PH$_2$+H and PH+H$_2$ fragments; it was also established that phosphine dissociation on combined vacancies is possible at room temperature. If there is a silicon vacancy on the surface, phosphorus settles in the Si(001) lattice as PH (if the vacancy is SiCl) or as PH$_2$ (if the vacancy is SiCl$_2$). This paper suggests a method to plant a separate phosphorus atom into the silicon surface layer with atomic precision, using phosphine adsorption on defects specially created on a Si(001)-2$\times$1-Cl surface with an STM tip.

cond-mat.mtrl-sci↗