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Tatsuya Okuno

Publications and source records attributed to Tatsuya Okuno.

2 recordsLinked to original sources

A Tool for Estimating Success Rates of Raycasting-Based Object Selection in Virtual Reality

As XR devices become widespread, 3D interaction has become commonplace, and UI developers are increasingly required to consider usability to deliver better user experiences. The HCI community has long studied target-pointing performance, and research on 3D environments has progressed substantially. However, for practitioners to directly leverage research findings in UI improvements, practical tools are needed. To bridge this gap between research and development in VR systems, we propose a system that estimates object selection success rates within a development tool (Unity). In this paper, we validate the underlying theory, describe the tool's functions, and report feedback from VR developers who tried the tool to assess its usefulness.

cs.HC

Ultra-high temperature Soret effect in a silicate melt: SiO2 migration to cold side

The Soret effect, temperature gradient driven diffusion, in silicate melts has been investigated intensively in the earth sciences from the 1980s. The SiO2 component is generally concentrated in the hotter region of silicate melts under a temperature gradient. Here, we report that at ultra-high temperatures above approximately 3000 K, SiO2 becomes concentrated in the colder region of the silicate melts under a temperature gradient. The interior of an aluminosilicate glass (63.3SiO2-16.3Al2O3-20.4CaO(mol%)) was irradiated with a 250 kHz femtosecond laser pulse for local heating. SiO2 migrated to the colder region during irradiation with an 800 pulse (3.2 ms irradiation). The temperature analysis indicated that migration to the colder region occurred above 3060 K. In the non-equilibrium molecular dynamics (NEMD) simulation, SiO2 migrated to the colder region under a temperature gradient, which had an average temperature of 4000 K; this result supports the experimental result. On the other hand, SiO2 exhibited a tendency to migrate to the hotter region at around 2400 K in both the NEMD and experimental study. The second-order like phase transition was observed at ~2000-3400 K when calculated using MD without a temperature gradient. Therefore, the second-order phase transition could be related to the migration of SiO2 to colder region. However, the detailed mechanism has not been elucidated.

physics.chem-ph