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Tengfei Luo

Publications and source records attributed to Tengfei Luo.

At least 73 records · Page 4Linked to original sources

A Unified Deep Neural Network Potential Capable of Predicting Thermal Conductivity of Silicon in Different Phases

Molecular dynamics simulations have been extensively used to predict thermal properties, but simulating different phases with similar precision using a unified force field is often difficult, due to the lack of accurate and transferrable interatomistic potential fields. As a result, this issue has become a major barrier to predicting the phase change of materials and their transport properties with atomistic-level modeling techniques. Recently, machine learning based algorithms have emerged as promising tools to develop accurate potentials for molecular dynamics simulations. In this work, we approach the problem of predicting the thermal conductivity of silicon in different phases by performing molecular dynamics simulations with a deep neural network potential. This neural network potential is trained with ab-initio data of silicon in the crystalline, liquid and amorphous phases. The accuracy of our potential is first validated through reproducing the atomistic structures during the phase transition, where other empirical potentials usually fail. The thermal conductivity of different phases is then calculated, showing a good agreement with the experimental results and ab-initio calculation results. Our work shows that a unified neural network-based potential can be a promising tool for studying phase change and thermal transport of materials with high accuracy.

cond-mat.mtrl-sci↗

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

cond-mat.mtrl-sci↗

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC.

physics.app-ph↗

Ballistic Supercavitating Nano Swimmer Driven by Single Gaussian Beam Optical Pushing and Pulling Forces

Directed high-speed motion of nanoscale objects in fluids (nano swimmers) can have a wide range of applications like molecular machinery, nano robotics, drug delivery, and material assembly. Here, we report ballistic plasmonic Au nanoparticle (NP) swimmers with unprecedented speeds realized by not only optical pushing but also pulling forces from a single Gaussian laser beam. Both the optical pulling and high swimmer speeds are made possible by a unique NP-laser interaction. The Au NP excited by the laser at the surface plasmon resonance peak can generate a nanoscale bubble, which can encapsulate the NP (i.e., supercavitation) to create a virtually frictionless environment for it to move, like the Leidenfrost effect. While optical forces are mostly positive, certain NP-bubble configurations can lead to negative optical forces that pull the NP to swims against the photon stream. The demonstrated ultra-fast, light-driven NP movement may benefit a wide range of nano- and bio-applications and provide new insights to the field of negative optical force.

cond-mat.mes-hall↗

Tuning Water Slip Behavior in Nanochannels using Self-Assembled Monolayers

Water slip at solid surfaces is important for a wide range of micro/nano-fluidic applications. While it is known that water slip behavior depends on surface functionalization, how it impacts the molecular level dynamics and mass transport at the interface is still not thoroughly understood. In this paper, we use nonequilibrium molecular dynamics simulations to investigate the slip behavior of water confined between gold surfaces functionalized by self-assembled monolayer (SAM) molecules with different polar functional groups. We observe a positive-to-negative slip transition from hydrophobic to hydrophilic SAM functionalizations, which is found related to the stronger interfacial interaction between water molecules and more hydrophilic SAM molecules. The stronger interaction increases the surface friction and local viscosity, making water slip more difficult. More hydrophilic functionalization also slows down the interfacial water relaxation and leads to more pronounced water trapping inside the SAM layer, which both impede water slip. The results from this work will provide useful insights to the understanding of the water slip at functionalized surfaces and design guidelines for various applications.

physics.app-ph↗

The Role of Ionization in Thermal Transport of Solid Polyelectrolytes

Amorphous polymers are known as thermal insulators, increasing their thermal conductivities have not been guided by fully understood physics. In this work, we use molecular dynamics simulations to study the thermal transport mechanism of solid polyelectrolytes, poly(acrylic acid) (PAA) and its ionized forms. The thermal conductivity of PAA increases monotonically with the ionization strength. Although stronger ionization induces larger Coulombic interactions, the Coulombic interaction does not directly contribute to the thermal conductivity enhancement. Instead, it enhances thermal transport through the Lennard-Jones (LJ) interaction. The strong Coulombic force between the counterion and the ionized carboxylic group shifts the LJ force to the stronger LJ repulsive regime, which is mainly responsible for the improved thermal conductivity. Applying a high pressure can further reduce the inter-atomic distance and trigger the thermal transport through the LJ interaction. A thermal conductivity of 1.09 W/m.K can be achieved at 11.2 GPa in an ionized PAA.

cond-mat.soft↗

Magnon and Phonon Dispersion, Lifetime and Thermal Conductivity of Iron from Spin-Lattice Dynamics Simulations

In recent years, the fundamental physics of spin-thermal (i.e., magnon-phonon) interaction has attracted significant experimental and theoretical interests given its potential paradigm-shifting impacts in areas like spin-thermoelectrics, spin-caloritronics and spintronics. Modelling studies of the transport of magnons and phonons in magnetic crystals are very rare. In this paper, we use spin-lattice dynamics (SLD) simulations to model ferromagnetic crystalline iron, where the spin and lattice systems are coupled through the atomic position-dependent exchange function, and thus the interaction between magnon and phonon is naturally considered. We then present a method combining SLD simulations with spectral energy analysis to calculate the magnon and phonon harmonic (e.g., dispersion, specific heat, group velocity) and anharmonic (e.g., scattering rate) properties, based on which their thermal conductivity values are calculated. This work represents an example of using SLD simulations to understand the transport properties involving coupled magnon and phonon dynamics.

cond-mat.mtrl-sci↗

Interfacial Thermal Transport in Boron Nitride-Polymer Nanocomposite

Polymer composites with thermally conductive nanoscale filler particles, such as graphene and hexagonal boron nitride (h-BN), are promising for certain heat transfer applications. While graphene-polymer composites have been extensively investigated, studies on h-BN-polymer composites has been relatively rare. In this paper, we use molecular dynamics (MD) simulations to study the interfacial thermal conductance (ITC) involved in the h-BN-polymer composites. We first compare the ITC across h-BN/hexane (C6H14) interfaces to that of graphene/hexane interfaces, where we found that the electrostatic interaction due to the partial charge on h-BN atoms can play an important role in such interfacial thermal transport. Based this finding, we further explore the thermal transport across different h-BN interfaces, including h-BN/hexanamine (C6H13NH2), h-BN/hexanol (C6H13OH), h-BN/hexanoic acid (C5H11COOH), where the increasingly polar molecules lead to systematic changes in the electrostatic interactions between h-BN and polymers. Heat flux decomposition and atom number density calculations are performed to understand the role of electrostatic interaction in thermal transport across h-BN-polymer interfaces. It was observed that stronger electrostatic interactions across the interfaces can help attract the polymer molecules closer to h-BN, and the reduced interface distance leads to larger heat flux contributed from both van der Waals and electrostatic forces. These results may provide useful information to guide the design of thermally conductive h-BN-polymer nanocomposites.

physics.app-ph↗

Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport

We present experimental measurements of the thermal boundary conductance (TBC) from $77 - 500$ K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data provide an assessment of the assumptions that drive the phonon gas model-based diffuse mismatch models (DMM) and atomistic Green's function (AGF) formalisms for predicting TBC. Our measurements, when compared to previous experimental data, suggest that the TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the "vibrational mismatch" concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as $490\lbrack +150, -110\rbrack$ MW m$^{-2}$ K$^{-1}$. The disagreement among the DMM and AGF and the experimental data these elevated temperatures suggests a non-negligible contribution from additional modes contributing to TBC that not accounted for in the fundamental assumptions of these harmonic formalisms, such as inelastic scattering. Given the high quality of these ZnO/GaN interface, these results provide an invaluable critical and quantitive assessment of the accuracy of assumptions in the current state of the art of computational approaches for predicting the phonon TBC across interfaces.

cond-mat.mtrl-sci↗

Liquid phase stabilization versus bubble formation at a nanoscale-curved interface

We investigate the nature of vapor bubble nucleation near a nanoscale-curved convex liquid-solid interface using two models; an equilibrium Gibbs model for homogenous formation, and a nonequilibrium dynamic van der Waals/diffuse interface model for phase change in an initially cool liquid. Vapor bubble formation is shown to occur for sufficiently large radius of curvature and is suppressed for smaller radii. Solid-fluid interactions are accounted for and it is shown that liquid-vapor interfacial energy, hence Laplace pressure, has limited influence over bubble formation. The dominant factor is the energetic cost of creating the solid-vapor interface from the existing solid-liquid interface, as demonstrated via both equilibrium and non-equilibrium arguments.

physics.flu-dyn↗

How to Characterize Thermal Transport Capability of 2D Materials Fairly? - Sheet Thermal Conductance and the Choice of Thickness

Ever since the discovery of the record-high thermal conductivity of single layer graphene, thermal transport capability of monolayer 2D materials has been under constant spotlight. Since thermal conductivity is an intensive property for 3D materials and the thickness of 2D materials is not well defined, different definitions of thickness in literature have led to ambiguity towards predicting thermal conductivity values and thus in understanding the heat transfer capability of different monolayer 2D materials. We argue that if conventional definition of thermal conductivity should be used as the quantity to compare the heat transfer capability of various monolayer 2D materials, then the same thickness should be used. Alternatively, to circumvent the problem of ambiguous thickness completely, we also suggest that a "sheet thermal conductance" to be defined as an intensive 2D material property when characterizing the heat transfer capability of 2D materials. When converting literature thermal conductivity values of monolayer materials to this new property, some new features that were not displayed when using different thicknesses show up.

cond-mat.mtrl-sci↗

Intrinsic Electron Mobility Limits in beta-Ga2O3

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in beta-Ga2O3 to lower than 200 cm2/Vs at 300 K for donor doping densities lower than 1018 cm-3. In spite of similar electron effective mass of beta-Ga2O3 to GaN, the electron mobility is 10x lower because of a massive Frohlich interaction, due to the low phonon energies stemming from the crystal structure and strong bond ionicity. Based on the theoretical and experimental analysis, we provide an empirical expression for electron mobility in beta-Ga2O3 that should help calibrate its potential in high performance device design and applications.

cond-mat.mtrl-sci↗

Hydrogenation of Penta-Graphene Leads to Unexpected Large Improvement in Thermal Conductivity

Penta-graphene (PG) has been identified as a novel 2D material with an intrinsic bandgap, which makes it especially promising for electronics applications. In this work, we use first-principles lattice dynamics and iterative solution of the phonon Boltzmann transport equation (BTE) to determine the thermal conductivity of PG and its more stable derivative - hydrogenated penta-graphene (HPG). As a comparison, we also studied the effect of hydrogenation on graphene thermal conductivity. In contrast to hydrogenation of graphene, which leads to a dramatic decrease in thermal conductivity (from 3590 to 1328 W/mK - a 63% reduction), HPG shows a notable increase in thermal conductivity (615 W/mK), which is 76% higher than that of PG (350 W/mK). The high thermal conductivity of HPG makes it more thermally conductive than most other semi-conducting 2D materials, such as the transition metal chalcogenides. Our detailed analyses show that the primary reason for the counter-intuitive hydrogenation-induced thermal conductivity enhancement is the weaker bond anharmonicity in HPG than PG. This leads to weaker phonon scattering after hydrogenation, despite the increase in the phonon scattering phase space. The high thermal conductivity of HPG may inspire intensive research around HPG and other derivatives of PG as potential materials for future nanoelectronic devices. The fundamental physics understood from this study may open up a new strategy to engineer thermal transport properties of other 2D materials by controlling bond anharmonicity via functionalization.

cond-mat.mtrl-sci↗

Unusual Isotope Effect on Thermal Transport of Single Layer Molybdenum Disulphide (MoS2)

Thermal transport in single layer molybdenum disulfide (MoS2) is critical to advancing its applications. In this paper, we use molecular dynamics (MD) simulations with first-principles force constants to study the isotope effect on the thermal transport of single layer MoS2. Through phonon modal analysis, we found that isotopes can strongly scatter phonons with intermediate frequencies, and the scattering behavior can be radically different from that predicted by conventional scattering model based on perturbation theory (Tamura's formula). Such a discrepancy becomes smaller for low isotope concentrations. Natural isotopes can lead to a 30% reduction in thermal conductivity for large size samples. However, for small samples where boundary scattering becomes significant, the isotope effect can be greatly suppressed. It was also found that the Mo isotopes, which contribute more to the phonon eigenvectors in the intermediate frequency range, have stronger impact on thermal conductivity than S isotopes.

cond-mat.mtrl-sci↗

Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes

The realization of phononic computing is held hostage by the lack of high performance thermal devices. Here we show through theoretical analysis and molecular dynamics simulations that unprecedented thermal rectification factors (as large as 1.20) can be achieved utilizing the phase dependent thermal conductivity of polyethylene nanofibers. More importantly, such high thermal rectifications only need very small temperature differences (< 20 oC) across the device, which is a significant advantage over other thermal diodes which need temperature biases on the order of the operating temperature. Taking this into consideration, we show that the dimensionless temperature-scaled rectification factors of the polymer nanofiber diodes range from 12 to 25 - much larger than other thermal diodes (< 8). The polymer nanofiber thermal diode consists of a crystalline portion whose thermal conductivity is highly phase-sensitive and a cross-linked portion which has a stable phase. Nanoscale size effect can be utilized to tune the phase transition temperature of the crystalline portion, enabling thermal diodes capable of operating at different temperatures. This work will be instrumental to the design of high performance, inexpensive and easily processible thermal devices, based on which thermal circuits can be built to ultimately enable phononic computing.

physics.chem-ph↗

A Revisit to High Thermoelectric Performance of Single-layer MoS2

Both electron and phonon transport properties of single layer MoS2 (SLMoS2) are studied. Based on first-principles calculations, the electrical conductivity of SLMoS2 is calculated by Boltzmann equations. The thermal conductivity of SLMoS2 is calculated to be as high as 116.8 Wm-1K-1 by molecular dynamics (MD) simulations. The predicted value of ZT is as high as 0.26 at 500K. As the thermal conductivity could be reduced largely by phonon engineering, there should be a high possibility to enhance ZT in the SLMoS2-based materials.

cond-mat.mes-hall↗

Effect of Electron-Phonon Coupling on Thermal Transport across Metal-Nonmetal Interface - A Second Look

The effect of electron-phonon (e-ph) coupling on thermal transport across metal-nonmetal interfaces is yet to be completely understood. In this paper, we use a series of molecular dynamics (MD) simulations with e-ph coupling effect included by Langevin dynamics to calculate the thermal conductance at a model metal-nonmetal interface. It is found that while e-ph coupling can present additional thermal resistance on top of the phonon-phonon thermal resistance, it can also make the phonon-phonon thermal conductance larger than the pure phonon transport case. This is because the e-ph interaction can disturb the phonon subsystem and enhance the energy communication between different phonon modes inside the metal. This facilitates redistributing phonon energy into modes that can more easily transfer energy across the interfaces. Compared to the pure phonon thermal conduction, the total thermal conductance with e-ph coupling effect can become either smaller or larger depending on the coupling factor. This result helps clarify the role of e-ph coupling in thermal transport across metal-nonmetal interface.

cond-mat.mtrl-sci↗

Anisotropic Thermal Conductivity in Single Crystal beta-Gallium Oxide

The thermal conductivities of beta-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80-495K using the time domain thermoreflectance (TDTR) method. A large anisotropy was found. At room temperature, the [010] direction has the highest thermal conductivity of 27.0+/-2.0 W/mK, while that along the [100] direction has the lowest value of 10.9+/-1.0 W/mK. At high temperatures, the thermal conductivity follows a ~1/T relationship characteristic of Umklapp phonon scattering, indicating phonon-dominated heat transport in the \b{eta}-Ga2O3 crystal. The measured experimental thermal conductivity is supported by first-principles calculations which suggest that the anisotropy in thermal conductivity is due to the differences of the speed of sound along different crystal directions.

cond-mat.mtrl-sci↗