arXiv subjects

Thanayut Kaewmaraya

Publications and source records attributed to Thanayut Kaewmaraya.

4 recordsLinked to original sources

arXiv2026

Systematic modulation of superconducting gap dynamics in YBCO|BNT|YBCO Josephson Junctions through THz field interaction and BNT ferroelectric barrier

The integration of ferroelectric barriers into high-temperature Josephson junctions offers a pathway to tunable superconducting quantum devices. Here, we demonstrate robust Josephson coupling in YBa2Cu3O7-x (YBCO)/Bi0.5Na0.5TiO3 (BNT)/YBCO trilayer junctions incorporating a 40 nm ferroelectric BNT barrier. Epitaxial trilayers were fabricated by pulsed laser deposition on SrTiO3 substrates and investigated under broadband terahertz (THz) irradiation (0.5-2.5 THz). At 1.5 THz, close to the Josephson plasma resonance, the BNT polarization increased from 33.4 to 46.4 uC/cm2 at 30 K, enhancing superconducting transport. The junctions exhibited a well-defined zero-voltage supercurrent branch, with the critical current Ic(T) remaining nearly constant up to 60 K and reaching 468.2 uA under 1.5 THz excitation, evidencing strong phase coherence. Scanning tunneling spectroscopy revealed an enhanced superconducting gap in YBCO/BNT/YBCO (Delta = 1.3 meV) compared with pure YBCO (Delta = 1.05 meV), while optical conductivity measurements showed a reduction in conductivity and gap with increasing temperature, consistent with BCS theory under THz excitation. Atomic force microscopy and X-ray reflectivity confirmed uniform morphology and sharp interfaces, excluding defect-mediated transport. Magnetic field modulation of Ic(B) exhibited a canonical Fraunhofer interference pattern, and resistance mapping revealed alternating lobes of high and low dissipation, indicating coherent Josephson tunneling. These results establish that Josephson coupling is intrinsic to the YBCO/BNT/YBCO junctions, enabled by the dipolar character and dynamic THz response of the BNT barrier. This study identifies BNT as a viable, tunable barrier material for next-generation high-Tc superconducting quantum devices.

cond-mat.supr-con↗

arXiv2023

Molybdenum Carbide MXenes as Efficient Nanosensors Towards Selected Chemical Warfare Agents

There has been budding demand for the fast, reliable, inexpensive, non-invasive, sensitive, and compact sensors with low power consumption in various fields, such as defence, chemical sensing, health care, and safe environment monitoring units. Particularly, an efficient detection of chemical warfare agents (CWAs) is of great importance for the safety and security of the humans. Inspired by this, we explored molybdenum carbide MXenes (Mo2CTx; Tx= O, F, S) as efficient sensors towards selected CWAs, such as arsine (AsH3), mustard gas (C4H8Cl2S), cyanogen chloride (NCCl), and phosgene (COCl2) both in aqueous and non-aqueous mediums. Our van der Waals corrected density functional theory (DFT) calculations reveal that the CWAs bind with Mo2CF2, and Mo2CS2 monolayers under strong chemisorption with binding energies in the range of -2.33 to -4.05 eV, whereas Mo2CO2 results in comparatively weak bindings of -0.29 to -0.58 eV. We further report the variations in the electronic properties, electrostatic potentials and work functions of Mo2CTx upon the adsorption of CWAs, which authenticate an efficient sensing mechanism. Statistical thermodynamic analysis is applied to explore the sensing properties of Mo2CTx at various of temperatures and pressures. We believe that our findings will pave the way to an innovative class of low-cost reusable sensors for the sensitive and selective detection of highly toxic CWAs in air as well as in aqueous media.

physics.comp-ph↗

arXiv2022

Strong electron-phonon coupling and predicted highest known $T_{c}$ of MXenes revealed in 2H-Mo$_{2}$N under biaxial stress

This letter reports the unexpectedly strong electron-phonon coupling (EPC) and the highest $T_c$ record ($\approx$ 38 K) among the MXenes revealed in the 2H-Mo$_2$N under biaxial stress. At first, its excellent mechanical properties are demonstrated with ideal strength of 37 GPa and elastic modulus of 438 GPa. Subsequently, EPC and corresponding $T_c$ are elucidated upon the dynamically stable range of strain. For strain-free 2H-Mo$_2$N, the EPC constant ($λ$) and $T_c$ are 1.3 and 22.7 K, respectively. This $T_c$ is higher than those of 2H-Mo$_2$C (4.3 K), 1T-Mo$_2$N (16.8 K), and other pristine MXenes. The material exhibits remarkable enhancement in $λ$ and $T_c$ when subject to compressive and tensile stresses. The obvious strong EPC with $λ$ over 2.0 occurs at strains of -4%, -2.5%, and 5%, yielding $T_c$s of 37.8, 35.4, and 28.9 K, respectively. Our findings suggest that the strain-dependent feature and energy levels of electronic bands play an essential role in enhancing EPC. Moreover, the stronger EPC in Mo$_2$N compared with Mo$_2$C is clarified based on lattice vibrations. Therefore, this work paves a practical way for designing 2D superconducting materials using tuning atomic recipes and strain-dependent engineering.

cond-mat.supr-con↗

arXiv2020

Extrinsic doping in group IV hexagonal-diamond type crystals

Over the last few years, group IV hexagonal-diamond type crystals have acquired great attention in semiconductor physics thanks to the appearance of novel and very effective growth methods. However, many questions remain unaddressed on their extrinsic doping capability and on how it compares to those of diamond-like structures. This point is here investigated through numerical simulations conducted in the framework of the Density Functional Theory (DFT). The comparative analysis for group III and V dopant atoms shows that: i) in diamond-type crystals the bulk sites symmetry ($T_d$) is preserved by doping while in hexagonal crystals the impurity site moves towards a higher ($T_d$) or lower ($C_{3v}$) symmetry configuration dependently on the valence of the dopant atoms; ii) for Si and Ge, group III impurities can be more easily introduced in the hexagonal-diamond phase, whose local $C_{3v}$ symmetry better accommodates the three-fold coordination of the impurity, while n-type impurities do not reveal any marked phase preference; iii) for C, both n and p dopants are more stable in the hexagonal-diamond structure than in the the cubic one, but this tendency is much more pronounced for n-type impurities.

cond-mat.mtrl-sci↗