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Thiago J. A. Mori

Publications and source records attributed to Thiago J. A. Mori.

2 recordsLinked to original sources

Compensation-Like Temperature and Spin-Flip Switch in Strained Thulium Iron Garnet Thin Films: Tuning Sublattice Interactions for Ferrimagnetic Spintronics

Certain rare-earth iron garnet (RIG) thin films combine desirable properties such as low magnetic damping, high magnetostriction, and, in some cases, perpendicular magnetic anisotropy (PMA), making them attractive for spintronics applications. However, the interplay between their magnetic sublattices in confined films remains poorly explored, particularly the coupling between 3d and 4f electrons. Here, we investigate the magnetic properties of a 30 nm-thick thulium iron garnet (TmIG) thin film, where tensile strain promotes PMA. SQUID magnetometry and X-ray Magnetic Circular Dichroism measurements reveal a magnetization minimum near 50 K under moderate magnetic fields, leading to a compensation-like temperature (Tcomp-like), a feature absent in bulk TmIG. The presence of Tcomp-like is particularly relevant for controlling magnetization dynamics through compensation phenomena. Additionally, we observe a field-induced spin-flip transition in the Tm sublattice, where Tm moments reorient and align ferromagnetically concerning the Fe sublattices. This mechanism can be exploited for energy-efficient magnetization reversal. These findings provide new insights into strain-driven magnetic phenomena in rare-earth iron garnet thin films, highlighting the interplay between exchange interactions and anisotropy in confined geometries, which is crucial for the development of spintronic and magnonic devices.

cond-mat.mtrl-sci↗

Bulk and Interface Effects Based on Rashba-Like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices

In this work, employing spin-pumping techniques driven by both ferromagnetic resonance (SP-FMR) and longitudinal spin Seebeck effect (LSSE) to manipulate and direct observe orbital currents, we investigated the volume conversion of spin-orbital currents into charge-current in YIG(100nm)/Pt(2nm)/NM2 structures, where NM2 represents Ti or Ru. While the YIG/Ti bilayer displayed a negligible SP-FMR signal, the YIG/Pt/Ti structure exhibited a significantly stronger signal attributed to the orbital Hall effect of Ti. Substituting the Ti layer with Ru revealed a similar phenomenon, wherein the effect is ascribed to the combined action of both spin and orbital Hall effects. Furthermore, we measured the SP-FMR signal in the YIG/Pt(2)/Ru(6)/Ti(6) and YIG/Pt(2)/Ti(6)/Ru(6) heterostructures by just altering the stack order of Ti and Ru layers, where the peak value of the spin pumping signal is larger for the first sample. To verify the influence on the oxidation of Ti and Ru films, we studied a series of thin films subjected to controlled and natural oxidation. As Cu and CuOx is a system that is already known to be highly influenced by oxidation, this metal was chosen to carry out this study. We investigated these samples using SP-FMR in YIG/Pt(2)/CuOx(tCu) and X-ray absorption spectroscopy and concluded that samples with natural oxidation of Cu exhibit more significant results than those when the CuOx is obtained by reactive sputtering. In particular, samples where the Cu layer is naturally oxidized exhibit a Cu2O-rich phase. Our findings help to elucidate the mechanisms underlying the inverse orbital Hall and inverse orbital Rashba-Edelstein-like effects. These insights indeed contribute to the advancement of devices that rely on orbital-charge conversion.

cond-mat.mtrl-sci↗