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Thibaud Denneulin

Publications and source records attributed to Thibaud Denneulin.

13 recordsLinked to original sources

Engineering altermagnetic symmetry to enable anomalous Hall response in Cr$_{1-x}$Mn$_x$Sb

Altermagnets are a promising class of materials for spintronic applications. However, compounds that simultaneously combine the symmetry required to support an anomalous Hall effect with good metallic conductivity and magnetic ordering temperatures well above room temperature have remained elusive. Here, we demonstrate that partial substitution of Cr by Mn in epitaxial CrSb(100) thin films provides a viable route to engineer the combined structural and magnetic symmetry necessary to enable an otherwise symmetry-forbidden anomalous Hall effect. We systematically explore the magnetic phase diagram of Cr(Mn)Sb thin films including neutron diffraction. This allows us to identify a magnetic symmetry that supports the anomalous Hall effect, which we demonstrate in Cr(0.75)Mn(0.25)Sb. Guided by Landau theory, we model the field-driven reorientation of the Neel vector and the resulting anomalous Hall response, achieving good qualitative agreement with the experimental observations.

cond-mat.mtrl-sci

Towards reliable electrical measurements of superconducting devices inside a transmission electron microscope

Correlating structure with electronic functionality is central to the engineering of quantum materials and devices whose properties depend sensitively on disorder. Transmission electron microscopy (TEM) offers high spatial resolution together with access to structural, electronic, and magnetic degrees of freedom. However, operando electrical transport measurements on functional quantum devices remain rare, particularly at liquid helium temperature. Here, we demonstrate electrical transport measurements of niobium nitride (NbN) devices inside a TEM using a continuous-flow liquid-helium-cooled sample holder. By optimizing a thermal radiation shield to limit radiation from the nearby pole pieces of the objective lens, we achieve an estimated base sample temperature of 8-9 K, as inferred from the superconducting transition temperatures of our devices. We find that both electron beam illumination and objective lens excitation perturb the superconducting state. In addition, we evaluate the imaging capabilities and stability of the sample holder at low temperature by imaging the magnetic domain structure of the van der Waals ferromagnet CrBr$_3$. Finally, we perform calculations that underscore the importance of cryo-shielding for minimizing thermal radiation onto the device. This capability enables correlative low-temperature TEM studies, in which structural, spectroscopic, and electrical transport data can be obtained from the same device, thereby providing a platform for probing the microscopic origins of quantum phenomena.

cond-mat.supr-con

Magnetic skyrmion lattice disclinations in pentagon- and heptagon-shaped FeGe crystals

Magnetic skyrmions in chiral magnets typically arrange into hexagonal lattices, with their structural order influenced by factors such as temperature, external magnetic fields and geometric constraints. While translational defects in skyrmion lattices such as dislocations have been extensively studied, individual angular defects, or disclinations, remain largely unexplored. Here, we report on the stabilization of five-fold and seven-fold disclinations in pentagon- and heptagon-shaped FeGe nanocrystals created using focused ion beam milling. The magnetic and elastic structures of the disclinated lattices are investigated using Fresnel imaging and off-axis electron holography in a transmission electron microscope. The results are supported by micromagnetic simulations and analytical models based on linear elasticity theory.

cond-mat.mtrl-sci

Switchable Exchange Bias Resulting from Correlated Domain Structures in Orthogonally Coupled Antiferromagnet/Ferromagnet van der Waals Heterostructures

Van der Waals (vdW) magnetic heterostructures offer a versatile platform for engineering interfacial spin interactions with atomic precision, enabling nontrivial spin textures and dynamic behaviors. In this work, we report robust asymmetric magnetization reversal and exchange bias in Fe3GeTe2 (FGT), driven by interlayer exchange coupling with the A-type antiferromagnet CrSBr. Despite the orthogonal magnetic anisotropies out-of-plane easy axis in FGT and in-plane in CrSBr, we observe a strong interfacial exchange interaction that gives rise to pronounced and switchable exchange bias and asymmetric switching in FGT, persisting up to the Néel temperature of CrSBr (132 K) as revealed by anomalous Hall effect measurements. We uncover the microscopic origin of this behavior through cross-sectional magnetic imaging of the domain structure using off-axis electron holography. The results reveal that the asymmetric switching and exchange bias arise from the influence of CrSBr on the domain configuration of FGT, where the in-plane antiferromagnetic state of CrSBr promotes the formation of stripe-like domain structures in FGT with circular rotation of magnetization in the cross-sectional bc plane defined by the easy axes of both FGT and CrSBr. These findings elucidate the mechanism of exchange bias in orthogonally coupled van der Waals systems and demonstrate a pathway for stabilizing three-dimensional domain structures in ferromagnets through interfacial exchange interactions.

cond-mat.mtrl-sci

Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS3/Fe3GeTe2 van der Waals Heterostructures

The exchange bias phenomenon, inherent in exchange-coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structure, provide an optimal platform for probing such physical phenomena. However, achieving a facile and effective means to manipulate exchange bias in van der Waals heterostructures remains challenging. In this study, we investigate the origin of exchange bias in MnPS3/Fe3GeTe2 van der Waals heterostructures. Our work demonstrates a method to modulate unidirectional exchange anisotropy, achieving an unprecedented nearly 1000% variation through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS3, magneto-transport measurements reveal a huge 170 mT exchange bias at 5 K, one of the largest observed in van der Waals antiferromagnet-ferromagnet interfaces. This substantial magnitude of the exchange bias is linked to an anomalous weak ferromagnetic ordering in MnPS3 below 40 K. On the other hand, the tunability of exchange bias during thermal cycling is ascribed to the modified arrangement of interfacial atoms and changes in the vdW gap during field cooling. Our findings highlight a robust and easily adjustable exchange bias in van der Waals antiferromagnetic/ferromagnetic heterostructures, presenting a straightforward approach to enhance other interface-related spintronic phenomena for practical applications. A detailed study of the interface reveals migration of atoms between the layers, leading to the formation of amorphous region on either side of the van der Waals gap, underscoring the importance of precise characterization of interfaces in van der Waals heterostructures, which are often presumed to have pristine interfaces.

cond-mat.mtrl-sci

Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface

Perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interactions are key interactions in modern spintronics. These interactions are thought to be dominated by the oxidation of the Co|Al interface in the archetypal Platinum-Cobalt-Aluminum oxide system. Here, we observe a double sign change in the anisotropy and about threefold variation in interfacial chiral interaction, influenced not only by the oxidation, but also by the metallic Al thickness. Contrary to previous assumptions about negligible spin-orbit effects at light metal interfaces, we not only observe strong PMA with fully oxidized Al, decreasing and turning negative (in-plane) with less oxygen at the Co|Al interface, we also observe that the magnetic anisotropy reverts to positive (out-of-plane) values at fully metallic Co|Al interface. These findings suggest modification in Co d band via Co|Al orbital hybridization, an effect supported by X-ray absorption spectroscopy and ab initio theory calculations, highlighting the key impact of strain on interfacial mechanisms at fully metallic Co|Al interface.

cond-mat.mtrl-sci

Harnessing van der Waals CrPS4 and Surface Oxides for non-monotonic pre-set field induced Exchange Bias in Fe3GeTe2

Two-dimensional van der Waals (vdW) heterostructures are an attractive platform for studying exchange bias due to their defect free and atomically flat interfaces. Chromium thiophosphate (CrPS4), an antiferromagnetic material, possesses uncompensated magnetic spins in a single layer, rendering it a promising candidate for exploring exchange bias phenomena. Recent findings have highlighted that naturally oxidized vdW ferromagnetic Fe3GeTe2 exhibits exchange bias, attributed to the antiferromagnetic coupling of its ultrathin surface oxide layer (O-FGT) with the underlying unoxidized Fe3GeTe2. Anomalous Hall measurements are employed to scrutinize the exchange bias within the CrPS4/(O-FGT)/Fe3GeTe2 heterostructure. This analysis takes into account the contributions from both the perfectly uncompensated interfacial CrPS4 layer and the interfacial oxide layer. Intriguingly, a distinct and non-monotonic exchange bias trend is observed as a function of temperature below 140 K. The occurrence of exchange bias induced by a 'pre-set field' implies that the prevailing phase in the polycrystalline surface oxide is ferrimagnetic Fe3O4. Moreover, the exchange bias induced by the ferrimagnetic Fe3O4 is significantly modulated by the presence of the van der Waals antiferromagnetic CrPS4 layer, forming a heterostructure, along with additional iron oxide phases within the oxide layer. These findings underscore the intricate and complex nature of exchange bias in van der Waals heterostructures, highlighting their potential for tailored manipulation and control.

cond-mat.mtrl-sci

Driving skyrmions in flow regime in synthetic ferrimagnets

Despite significant advances in the last decade regarding the room temperature stabilization of skyrmions or their current induced dynamics, the impact of local material inhomogeneities still remains an important issue that impedes to reach the regime of steady state motion of these spin textures. Here, we study the spin-torque driven motion of skyrmions in synthetic ferrimagnetic multilayers with the aim of achieving high mobility and reduced skyrmion Hall effect. We consider Pt|Co|Tb multilayers of various thicknesses with antiferromagnetic coupling between the Co and Tb magnetization. The increase of Tb thickness in the multilayers allows to reduce the total magnetic moment and increases the spin-orbit torques allowing to reach velocities up to 400 m.s-1 for skyrmions with diameters of about 160 nm. We demonstrate that due to reduced skyrmion Hall effect, combined with the edge repulsion of the magnetic track making the skyrmions moving along the track without any transverse deflection. Further, by comparing the field-induced domain wall motion and current-induced skyrmion motion, we demonstrate that the skyrmions at the largest current densities present all the characteristics of a dynamical flow regime.

cond-mat.mtrl-sci

Field-free switching of perpendicular magnetization in an ultrathin epitaxial magnetic insulator

For energy efficient and fast magnetic memories, switching of perpendicular magnetization by the spin-orbit torque (SOT) appears as a very promising solution, even more using magnetic insulators that suppress electrical shunting. This SOT switching generally requires the assistance of an in-plane magnetic field to break the symmetry. Here, we present experiments demonstrating the field-free SOT switching of perpendicularly magnetized layers of the thulium iron garnet (Tm_{3}Fe_{5}O_{12}) magnetic insulator. The polarity of the switching loops, clockwise (CW) or counter-clockwise (CCW), is determined by the direction of the initial current pulses, in contrast with field-assisted switchings in which this polarity is controlled by the direction of the field. After an independent determination of Dzyaloshinskii-Moriya interaction (DMI), we relate the field free switching to the interplay of SOT and DMI and the polarity of the loops to the imprint of a Néel domain wall induced by the first pulse, in agreement with Kerr imaging. Our observation and interpretation of field-free electrical switching of a magnetic insulator is an important milestone for future low power spintronic devices.

physics.app-ph

Skyrmionic Spin Structures in Layered Fe5GeTe2 Up To Room Temperature

The role of the crystal lattice, temperature and magnetic field for the spin structure formation in the 2D van der Waals magnet Fe5GeTe2 is a key open question. Using Lorentz transmission electron microscopy, we experimentally observe topological spin structures up to room temperature in the metastable pre-cooling and stable post-cooling phase of Fe5GeTe2. Over wide temperature and field ranges, skyrmionic magnetic bubbles form without preferred chirality, which is indicative of a centrosymmetric crystal structure. In the pre-cooling phase, these bubbles are observable even without the application of an external field, while in the post-cooling phase, a transformation from bubble domains to stripe domains is seen. To understand the magnetic order in Fe5GeTe2 we compare macroscopic magnetometry characterization results with microscopic density functional theory calculation. Our results show that even up to room temperature, topological spin structures can be stabilized in centrosymmetric van der Waals magnets.

cond-mat.mes-hall

Strong bulk spin-orbit torques quantified in the van der Waals ferromagnet Fe3GeTe2

The recent emergence of magnetic van der Waals materials allows for the investigation of current induced magnetization manipulation in two dimensional materials. Uniquely, Fe3GeTe2 has a crystalline structure that allows for the presence of bulk spin-orbit torques (SOTs), that we quantify in a Fe3GeTe2 flake. From the symmetry of the measured torques, we identify the current induced effective fields using harmonic analysis and find dominant bulk SOTs, which arise from the symmetry in the crystal structure. Our results show that Fe3GeTe2 uniquely can exhibit bulk SOTs in addition to the conventional interfacial SOTs enabling magnetization manipulation even in thick single layers without the need for complex multilayer engineering.

cond-mat.mtrl-sci

Discovery and implications of hidden atomic-scale structure in a metallic meteorite

Iron and its alloys have made modern civilisation possible, with metallic meteorites providing one of the human's earliest sources of usable iron as well as providing a window into our solar system's billion-year history. Here highest-resolution tools reveal the existence of a previously hidden FeNi nanophase within the extremely slowly cooled metallic meteorite NWA 6259. This new nanophase exists alongside Ni-poor and Ni-rich nanoprecipitates within a matrix of tetrataenite, the uniaxial, chemically ordered form of FeNi. The ferromagnetic nature of the nanoprecipitates combined with the antiferromagnetic character of the FeNi nanophases give rise to a complex magnetic state that evolves dramatically with temperature. These observations extend and possibly alter our understanding of celestial metallurgy, provide new knowledge concerning the archetypal Fe-Ni phase diagram and supply new information for the development of new types of sustainable, technologically critical high-energy magnets.

cond-mat.mtrl-sci

Excitons in InGaAs Quantum Dots without Electron Wetting Layer States

The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and nano-engineered devices. InAs QDs are excellent photon emitters: QD-excitons, electron-hole bound pairs, are exploited as emitters of high quality single photons for quantum communication. One significant drawback of the SK-mode is the wetting layer (WL). The WL results in a continuum rather close in energy to the QD-confined-states. The WL-states lead to unwanted scattering and dephasing processes of QD-excitons. Here, we report that a slight modification to the SK-growth-protocol of InAs on GaAs -- we add a monolayer of AlAs following InAs QD formation -- results in a radical change to the QD-excitons. Extensive characterisation demonstrates that this additional layer eliminates the WL-continuum for electrons enabling the creation of highly charged excitons where up to six electrons occupy the same QD. Single QDs grown with this protocol exhibit optical linewidths matching those of the very best SK QDs making them an attractive alternative to standard InGaAs QDs.

cond-mat.mes-hall