arXiv subjects

Thomas Brumme

Publications and source records attributed to Thomas Brumme.

25 records · Page 2Linked to original sources

arXiv2020

Electron-Phonon-Driven Three-Dimensional Metallicity in an Insulating Cuprate

The role of the crystal lattice for the electronic properties of cuprates and other high-temperature superconductors remains controversial despite decades of theoretical and experimental efforts. While the paradigm of strong electronic correlations suggests a purely electronic mechanism behind the insulator-to-metal transition, recently the mutual enhancement of the electron-electron and the electron-phonon interaction and its relevance to the formation of the ordered phases have also been emphasized. Here, we combine polarization-resolved ultrafast optical spectroscopy and state-of-the-art dynamical mean-field theory to show the importance of the crystal lattice in the breakdown of the correlated insulating state in an archetypal undoped cuprate. We identify signatures of electron-phonon coupling to specific fully-symmetric optical modes during the build-up of a three-dimensional metallic state that follows charge photodoping. Calculations for coherently displaced crystal structures along the relevant phonon coordinates indicate that the insulating state is remarkably unstable toward metallization despite the seemingly large charge-transfer energy scale. This hitherto unobserved insulator-to-metal transition mediated by fully-symmetric lattice modes can find extensive application in a plethora of correlated solids.

cond-mat.str-el↗

arXiv2019

Anomalous Interlayer Exciton Diffusion in Twist-Angle-Dependent Moiré Potentials of WS$_2$-WSe$_2$ Heterobilayers

The nanoscale periodic potentials introduced by moiré patterns in semiconducting van der Waals (vdW) heterostructures provide a new platform for designing exciton superlattices. To realize these applications, a thorough understanding of the localization and delocalization of interlayer excitons in the moiré potentials is necessary. Here, we investigated interlayer exciton dynamics and transport modulated by the moiré potentials in WS$_2$-WSe$_2$ heterobilayers in time, space, and momentum domains using transient absorption microscopy combined with first-principles calculations. Experimental results verified the theoretical prediction of energetically favorable K-Q interlayer excitons and unraveled exciton-population dynamics that was controlled by the twist-angle-dependent energy difference between the K-Q and K-K excitons. Spatially- and temporally-resolved exciton-population imaging directly visualizes exciton localization by twist-angle-dependent moiré potentials of ~100 meV. Exciton transport deviates significantly from normal diffusion due to the interplay between the moiré potentials and strong many-body interactions, leading to exciton-density- and twist-angle-dependent diffusion length. These results have important implications for designing vdW heterostructures for exciton and spin transport as well as for quantum communication applications.

cond-mat.mtrl-sci↗

arXiv2017

Momentum-Resolved View of Electron-Phonon Coupling in Multilayer WSe$_2$

We investigate the interactions of photoexcited carriers with lattice vibrations in thin films of the layered transition metal dichalcogenide (TMDC) WSe$_2$. Employing femtosecond electron diffraction with monocrystalline samples and first principle density functional theory calculations, we obtain a momentum-resolved picture of the energy-transfer from excited electrons to phonons. The measured momentum-dependent phonon population dynamics are compared to first principle calculations of the phonon linewidth and can be rationalized in terms of electronic phase-space arguments. The relaxation of excited states in the conduction band is dominated by intervalley scattering between $Σ$ valleys and the emission of zone-boundary phonons. Transiently, the momentum-dependent electron-phonon coupling leads to a non-thermal phonon distribution, which, on longer timescales, relaxes to a thermal distribution via electron-phonon and phonon-phonon collisions. Our results constitute a basis for monitoring and predicting out of equilibrium electrical and thermal transport properties for nanoscale applications of TMDCs.

cond-mat.mes-hall↗

arXiv2016

Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect

The transition-metal dichalcogenides have attracted a lot of attention as a possible stepping-stone toward atomically thin and flexible field-effect transistors. One key parameter to describe the charge transport is the time between two successive scattering events - the transport scattering time. In a recent report, we have shown that it is possible to use density functional theory to obtain the band structure of two-dimensional semiconductors in presence of field effect doping. Here, we report a simple method to extract the scattering time from the experimental conductivity and from the knowledge of the band structure. We apply our approach to monolayers and multilayers of MoS$_2$, MoSe$_2$, MoTe$_2$, WS$_2$, and WSe$_2$ in presence of a gate. In WS$_2$, for which accurate measurements of mobility have been published, we find that the scattering time is inversely proportional to the density of states at the Fermi level. Finally, we show that it is possible to identify the critical doping at which different valleys start to be occupied from the doping-dependence of the conductivity.

cond-mat.mes-hall↗

arXiv2015

First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity

We investigate how field-effect doping affects the structural properties, the electronic structure and the Hall coefficient of few-layers transition metal dichalcogenides by using density-functional theory. We consider mono-, bi-, and trilayers of the H polytype of MoS2, MoSe2, MoTe2, WS2, and WSe2 and provide a full database of electronic structures and Hall coefficients for hole and electron doping. We find that, for both electron and hole doping, the electronic structure depends on the number of layers and cannot be described by a rigid band shift. Furthermore, it is important to relax the structure under the asymmetric electric field. Interestingly, while the width of the conducting channel depends on the doping, the number of occupied bands at each given k point is almost uncorrelated with the thickness of the doping-charge distribution. Finally, we calculate within the constant-relaxation-time approximation the electrical conductivity and the inverse Hall coefficient. We demonstrate that in some cases the charge determined by Hall-effect measurements can deviate from the real charge by up to 50%. For hole-doped MoTe2 the Hall charge has even the wrong polarity at low temperature. We provide the mapping between the doping charge and the Hall coefficient. In the appendix we present more than 250 band structures for all doping levels of the transition-metal dichalcogenides considered within this work.

cond-mat.mes-hall↗

arXiv2014

Electrochemical doping of few layer ZrNCl from first-principles: electronic and structural properties in field-effect configuration

We develop a first-principles theoretical approach to doping in field-effect devices. The method allows for calculation of the electronic structure as well as complete structural relaxation in field-effect configuration using density-functional theory. We apply our approach to ionic-liquid-based field-effect doping of monolayer, bilayer, and trilayer ZrNCl and analyze in detail the structural changes induced by the electric field. We show that, contrary to what is assumed in previous experimental works, only one ZrNCl layer is electrochemically doped and that this induces large structural changes within the layer. Surprisingly, despite these structural and electronic changes, the density of states at the Fermi energy is independent of the doping. Our findings imply a substantial revision of the phase diagram of electrochemically doped ZrNCl and elucidate crucial differences with superconductivity in Li intercalated bulk ZrNCl.

cond-mat.mes-hall↗

arXiv2011

Dynamical bi-stability of single-molecule junctions: A combined experimental/theoretical study of PTCDA on Ag(111)

The dynamics of a molecular junction consisting of a PTCDA molecule between the tip of a scanning tunneling microscope and a Ag(111) surface have been investigated experimentally and theoretically. Repeated switching of a PTCDA molecule between two conductance states is studied by low-temperature scanning tunneling microscopy for the first time, and is found to be dependent on the tip-substrate distance and the applied bias. Using a minimal model Hamiltonian approach combined with density-functional calculations, the switching is shown to be related to the scattering of electrons tunneling through the junction, which progressively excite the relevant chemical bond. Depending on the direction in which the molecule switches, different molecular orbitals are shown to dominate the transport and thus the vibrational heating process. This in turn can dramatically affect the switching rate, leading to non-monotonic behavior with respect to bias under certain conditions. In this work, rather than simply assuming a constant density of states as in previous works, it was modeled by Lorentzians. This allows for the successful description of this non-monotonic behavior of the switching rate, thus demonstrating the importance of modeling the density of states realistically.

cond-mat.mes-hall↗