arXiv subjects

Thomas Dursap

Publications and source records attributed to Thomas Dursap.

3 recordsLinked to original sources

arXiv2025

Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires

Quantum entanglement is a fundamental resource for emerging quantum technologies, enabling secure communication and enhanced sensing. For decades, generating polarization entangled states has been mainly achieved using bulk crystals with spontaneous parametric down conversion (SPDC), preventing scalability and on-chip integration. Miniaturizing the quantum source provides access to more versatility and tunability while enabling an easier integration to other devices, notably necessary for satellite-based quantum communication, and eventually reducing fabrication costs. This challenging task can be achieved with Zinc Blende GaAs nanowires. They already have shown an efficient photon pairs generation via SPDC at 1550 nm. Here we demonstrate that a pair of orthogonal GaAs nanowires constitutes a new nanoscale platform to control the quantum state at telecommunication wavelength, enabling a transition from polarization entangled to separable states as a function of the pump polarization, with fidelities reaching 90%

physics.optics↗

arXiv2025

Optical absorption in hexagonal-diamond Si and Ge nanowires: insights from STEM-EELS experiments and ab initio theory

Hexagonal-diamond (2H) group IV nanowires are key for advancing group IV-based lasers, quantum electronics, and photonics. Understanding their dielectric response is crucial for performance optimization, but their optical absorption properties remain unexplored. We present the first comprehensive study of optical absorption in 2H-Si and 2H-Ge nanowires, combining high-resolution STEM, monochromated EELS, and ab initio simulations. The nanowires, grown in situ in a TEM as nanobranches on GaAs stems, show excellent structural quality: single crystalline, strain-free, minimal defects, no substrate contamination, enabling access to intrinsic dielectric response. 2H-Si exhibits enhanced absorption in the visible range compared to cubic Si, with a marked onset above 2.5 eV. 2H-Ge shows absorption near 1 eV but no clear features at the direct bandgap, as predicted by ab initio simulations. A peak around 2 eV in aloof-beam spectra is attributed to a thin 3C-Ge shell. These findings clarify structure-optical response relationships in 2H materials.

cond-mat.mes-hall↗

arXiv2022

Wetting of Ga droplets in SiO$_2$/Si cavities: Application to self-assisted GaAs nanowire growth

In this paper we compute and compare the surface energy of various Ga liquid droplets wetting a cylindrical cavity in various configurations. While for some of these configurations the surface energy can be computed explicitely for others numerical computation is needed. Motivated by the results obtained for the cylindrical cavities we explore the case of the more realistic situation, conical cavities. Our results provide a relation between the geometry of the conical cavity and the equilibirum wetting angles of the droplet on the bottom and on the sidewall of the cavity which insure the dewetting of the lateral surface. This is an important result toward the control of the verticality during the nanowire growth by the vapor liquid solid method.

cond-mat.mtrl-sci↗