arXiv subjects

Thomas Frauenheim

Publications and source records attributed to Thomas Frauenheim.

At least 73 records · Page 4Linked to original sources

arXiv2014

Opening Band Gap without Breaking Lattice Symmetry: A New Route toward Robust Graphene-Based Nanoelectronics

Developing graphene-based nanoelectronics hinges on opening a band gap in the electronic structure of graphene, which is commonly achieved by breaking the inversion symmetry of the graphene lattice via an electric field (gate bias) or asymmetric doping of graphene layers. Here we introduce a new design strategy that places a bilayer graphene sheet sandwiched between two cladding layers of materials that possess strong spin-orbit coupling (e.g., Bi2Te3). Our ab initio and tight-binding calculations show that proximity enhanced spin-orbit coupling effect opens a large (44 meV) band gap in bilayer graphene without breaking its lattice symmetry, and the band gap can be effectively tuned by interlayer stacking pattern and significantly enhanced by interlayer compression. The feasibility of this quantum-well structure is demonstrated by recent experimental realization of high-quality heterojunctions between graphene and Bi2Te3, and this design also conforms to existing fabrication techniques in the semiconductor industry. The proposed quantum-well structure is expected to be especially robust since it does not require an external power supply to open and maintain a band gap, and the cladding layers provide protection against environmental degradation of the graphene layer in its device applications.

cond-mat.mtrl-sci↗

arXiv2014

Stabilization Mechanism of ZnO nanoparticles by Fe doping

Surprisingly low solubility and toxicity of Fe-doped ZnO nanoparticles is elucidated on the basis of first-principles calculations. Various ZnO surfaces that could be present in nanoparticles are subject to substitutional Fe doping. We show that Fe stabilizes polar instable surfaces, while non-polar surfaces, namely (1010) and (1120), remain intact. Polar surfaces can be stabilized indirectly through Fe2+-Fe3+ pair assisted charge transfer, what reduces surface polarity and therefore, the solubility in polar solvents.

cond-mat.mtrl-sci↗

arXiv2013

Strain Engineering of Selective Chemical Adsorption on Monolayer MoS_2

Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the property of the host material. Recent studies discovered that single and multilayer molybdenum disulfide (MoS_2) films are ultra sensitive to several important environmental molecules. Here we report new findings from ab initio calculations that reveal substantially enhanced adsorption of NO and NH3 on strained monolyaer MoS2 with significant impact on the properties of the adsorbates and MoS2 layer. The magnetic moment of adsobed NO can be turned between 0 and 1 uB, strain also induces an electronic phase transition between half-metal and metal. Adsorption of NH3 weakens the MoS2 layer considerably, which explains the large discrepacy between the experimentally measured strength and breaking strain of MoS2 film from previous theoretical predictions. On the other hand, adsorption of NO2, CO and CO2 is insensitive to the strain condition in the MoS2 layer. This contrasting behavior allows sensitive strain engineering of selective chemical adsorption on MoS2 with effective tuning of mechanical, electronic and magnetic properties. These result suggest new design strategies for constructing MoS2 based ultrahigh sensitivity nanoscale sensor and electromechanical devices.

cond-mat.mtrl-sci↗

arXiv2013

A permutation invariant collective variable to track and drive vacancy dynamics in simulations of solids

Vacancy dynamics in oxides are vital for understanding redox reactions and resulting memristive effects or catalytic activity. We present a method to track and drive vacancies which we apply to metadynamics simulation of oxygen vacancies (V$_{\mathrm{O}}$) in rutile, demonstrating its effectiveness. Using the density functional based tight binding method, it is possible to explore the free energy hyperplane of oxygen vacancies in TiO$_{2}$. We show that the migration of V$_{\mathrm{O}}$ in TiO$_{2}$ is governed by the jump with the higherst number of realizations. Free energy profiles are consistent with minimum energy paths.

cond-mat.mtrl-sci↗

arXiv2013

Charge doping induced phase transitions in hydrogenated and fluorinated graphene

We show that charge doping can induce transitions between three distinct adsorbate phases in hydrogenated and fluorinated graphene. By combining ab initio, approximate density functional theory and tight binding calculations we identify a transition from islands of C$_8$H$_2$ and C$_8$F$_2$ to random adsorbate distributions around a doping level of $\pm 0.05$ e/C-atom. Furthermore, in situations with random adsorbate coverage, charge doping is shown to trigger an ordering transition where the sublattice symmetry is spontaneously broken when the doping level exceeds the adsorbate concentration. Rehybridization and lattice distortion energies make graphene which is covalently functionalized from one side only most susceptible to these two kinds of phase transitions. The energy gains associated with the clustering and ordering transitions exceed room temperature thermal energies.

cond-mat.mes-hall↗

arXiv2013

Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond

Formation and excitation energies as well charge transition levels, are determined forthe substitutional nitrogen (Ns),the vacancy (V) and related point defects (NV, NVH, N2, N2V and V2) by screened non-local hybrid density functional supercell plane wave calculations in bulk diamond. In additionthe activation energy for V and NV diffusion is calculated.We find good agreement between theory and experiment for the previously well-establisheddata, and predict missing ones. Based on the calculated properties of these defects, the formation of the negatively charged nitrogen-vacancy center is studied, which is a prominent candidate for application in quantum information processing and for nanosensors. We find that the concentration of NV defects are limited in natural diamonds due to the relatively high formation energy of NV. Our results imply that NV defects dominantly form just in the early stage of annealing in N-doped and irradiated diamonds. We find that the amphoteric divacancy defect with multiple acceptor states may significantly influence the charge state and photo-stability of NV in irradiated diamond samples.

cond-mat.mtrl-sci↗

arXiv2013

Graphene-based topological insulator with an intrinsic bulk band gap above room temperature

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are immune to backscattering and carry fully spin-polarized dissipationless currents. However, existing 2D TIs realized in HgTe and InAs/GaSb suffer from small bulk gaps (<10 meV) well below room temperature, thus limiting their application in electronic and spintronic devices. Here, we report a new 2D TI comprising a graphene layer sandwiched between two Bi2Se3 slabs that exhibits a large intrinsic bulk band gap of 30 to 50 meV, making it viable for room-temperature applications. Distinct from previous strategies for enhancing the intrinsic spin-orbit coupling effect of the graphene lattice, the present graphene-based TI operates on a new mechanism of strong inversion between graphene Dirac bands and Bi2Se3 conduction bands. Strain engineering leads to effective control and substantial enhancement of the bulk gap. Recently reported synthesis of smooth graphene/Bi2Se3 interfaces demonstrates feasibility of experimental realization of this new 2D TI structure, which holds great promise for nanoscale device applications.

cond-mat.mes-hall↗

arXiv2013

Thermodynamics of quantum coherence

Quantum decoherence is seen as an undesired source of irreversibility that destroys quantum resources. Quantum coherences seem to be a property that vanishes at thermodynamic equilibrium. Away from equilibrium, quantum coherences challenge the classical notions of a thermodynamic bath in a Carnot engines, affect the efficiency of quantum transport, lead to violations of Fourier's law, and can be used to dynamically control the temperature of a state. However, the role of quantum coherence in thermodynamics is not fully understood. Here we show that the relative entropy of a state with quantum coherence with respect to its decohered state captures its deviation from thermodynamic equilibrium. As a result, changes in quantum coherence can lead to a heat flow with no associated temperature, and affect the entropy production rate. From this, we derive a quantum version of the Onsager reciprocal relations that shows that there is a reciprocal relation between thermodynamic forces from coherence and quantum transport. Quantum decoherence can be useful and offers new possibilities of thermodynamic control for quantum transport.

quant-ph↗

arXiv2013

Magnetic Impurity Affected by Spin-Orbit Coupling: Behavior near a Topological Phase Transition

We investigate the effect of spin-orbit coupling on the behavior of magnetic impurity at the edge of a zigzag graphene ribbon by means of quantum Monte Carlo simulations. A peculiar interplay of Kane-Mele type spin-orbit and impurity-host coupling is found to affect local properties such as the impurity magnetic moment and spectral densities. The special helical nature of the topological insulator on the edge is found to affect nonlocal quantities, such as the two-particle and spin-spin correlation functions linking electrons on the impurity with those in the conduction band.

cond-mat.str-el↗

arXiv2013

Atomistic modeling of dynamical quantum transport

We present dynamical transport calculations based on a tight-binding approximation to adiabatic time-dependent density functional theory (TD-DFTB). The reduced device density matrix is propagated through the Liouville-von Neumann equation. For the model system, 1,4-benzenediol coupled to aluminum leads, we are able to confirm the equality of the steady state current resulting from a time-dependent calculation to a static calculation in the conventional Landauer framework. We also investigate the response of the junction subjected to alternating bias voltages with frequencies up to the optical regime. Here we can clearly identify capacitive behaviour of the molecular device and a significant resonant enhancement of the conductance. The results are interpreted using an analytical single level model comparing the device transmission and admittance. In order to aid future calculations under alternating bias, we shortly review the use of Fourier transform techniques to obtain the full frequency response of the device from a single current trace.

cond-mat.mes-hall↗

arXiv2011

Gas Doping on the Topological Insulator Bi2Se3 Surface

Gas molecule doping on the topological insulator Bi2 Se3 surface with existing Se vacancies is investigated using first-principles calculations. Consistent with experiments, NO2 and O2 are found to occupy the Se vacancy sites, remove vacancy-doped electrons and restore the band structure of a perfect surface. In contrast, NO and H2 do not favour passivation of such vacancies. Interestingly we have revealed a NO2 dissociation process that can well explain the speculative introduced "photon-doping" effect reported by recent experiments. Experimental strategies to validate this mechanism are presented. The choice and the effect of different passivators are discussed. This step paves the way for the usage of such materials in device applications utilizing robust topological surface states.

cond-mat.mes-hall↗

arXiv2011

Time-dependent versus static quantum transport simulations beyond linear response

To explore whether the density-functional theory non-equilibrium Green's function formalism (DFT-NEGF) provides a rigorous framework for quantum transport, we carried out time-dependent density functional theory (TDDFT) calculations of the transient current through two realistic molecular devices, a carbon chain and a benzenediol molecule inbetween two aluminum electrodes. The TDDFT simulations for the steady state current exactly reproduce the results of fully self-consistent DFT-NEGF calculations even beyond linear response. In contrast, sizable differences are found with respect to an equilibrium, non-self-consistent treatment which are related here to differences in the Kohn-Sham and fully interacting susceptibility of the device region. Moreover, earlier analytical conjectures on the equivalence of static and time-dependent approaches in the low bias regime are confirmed with high numerical precision.

cond-mat.mtrl-sci↗

arXiv2010

Theoretical prediction of topological insulator in ternary rare earth chalcogenides

A new class of three-dimensional topological insulator, ternary rare earth chalcogenides, is theoretically investigated with ab initio calculations. Based on both bulk band structure analysis and the direct calculation of topological surface states, we demonstrate that LaBiTe3 is a topological insulator. La can be substituted by other rare earth elements, which provide candidates for novel topological states such as quantum anomalous Hall insulator, axionic insulator and topological Kondo insulator. Moreover, YBiTe3 and YSbTe3 are found to be normal insulators. They can be used as protecting barrier materials for both LaBiTe3 and Bi2Te3 families of topological insulators for their well matched lattice constants and chemical composition.

cond-mat.mtrl-sci↗

arXiv2010

Theoretical Prediction of Topological Insulators in Thallium-based III-V-VI$_2$ Ternary Chalcogenides

We predict a new class of three dimensional topological insulators in thallium-based III-V-VI$_2$ ternary chalcogenides, including TlBiQ$_2$ and TlSbQ$_2$ (Q = Te, Se and S). These topological insulators have robust and simple surface states consisting of a single Dirac cone at the $Γ$ point. The mechanism for topological insulating behavior is elucidated using both first principle calculations and effective field theory models. Remarkably, one topological insulator in this class, TlBiTe$_2$ is also a superconductor when doped with $p$-type carriers. We discuss the possibility that this material could be a topological superconductor. Another material TlSbS$_2$ is on the border between topological insulator and trivial insulator phases, in which a topological phase transition can be driven by pressure.

cond-mat.mtrl-sci↗

arXiv2010

Silicon nanowire band gap modification

Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination. This effect has been observed in previous experimental and theoretical studies for hydrogenated wires. For a fixed cross-section, the functional group used to saturate the silicon surface significantly modifies the band gap, resulting in relative energy shifts of up to an electronvolt. The band gap shifts are traced to details of the hybridization between the silicon valence band and the frontier orbitals of the terminating group, which is in competition with quantum confinement.

cond-mat.mtrl-sci↗

arXiv2009

Oscillatory crossover from two dimensional to three dimensional topological insulators

We investigate the crossover regime from three dimensional topological insulators $Bi_2Te_3$ and $Bi_2Se_3$ to two dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and non-trivial two dimensional behavior.

cond-mat.mes-hall↗

arXiv2009

The absorption spectrum of hydrogenated silicon carbide nanocrystals from ab initio calculations

The electronic structure and absorption spectrum of hydrogenated silicon carbide nanocrystals (SiCNC) have been determined by first principles calculations. We show that the reconstructed surface can significantly change not just the onset of absorption, but the \emph{shape} of the spectrum at higher energies. We found that the absorption treshold of the reconstructed SiCNs cannot be accurately predicted from traditional density functional theory calculations.

cond-mat.mtrl-sci↗

arXiv2002

Electronic structure of overstretched DNA

Minuscule molecular forces can transform DNA into a structure that is elongated by more than half its original length. We demonstrate that this pronounced conformational transition is of relevance to ongoing experimental and theoretical efforts to characterize the conducting properties of DNA wires. We present quantum mechanical calculations for acidic, dry, poly(CG).poly(CG) DNA which has undergone elongation of up to 90 % relative to its natural length, along with a method for visualizing the effects of stretching on the electronic eigenstates. We find that overstretching leads to a drastic drop of the hopping matrix elements between localized occupied electronic states suggesting a dramatic decrease in the conductivity through holes.

cond-mat.mtrl-sci↗