arXiv subjects

Thomas Grange

Publications and source records attributed to Thomas Grange.

12 recordsLinked to original sources

arXiv2022

Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach

In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work, we assess the predictive power of these simulations by comparing the results of a single model with a large experimental data set of 110 devices with 48 different geometries. The devices are quantum point contacts of various shapes and sizes made with electrostatic gates deposited on top of a high mobility GaAs/GaAlAs two dimensional electron gas. We study the pinch-off voltages applied on the gates to deplete the two-dimensional electron gas in various spatial positions. We argue that the pinch-off voltages are a very robust signature of the charge distribution in the device. The large experimental data set allows us to critically review the modeling and arrive at a robust one-parameter model that can be calibrated in situ, a crucial step for making predictive simulations.

cond-mat.mes-hall↗

arXiv2022

Semiconductor-based electron flying qubits: Review on recent progress accelerated by numerical modelling

The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological challenges of flying qubits that are currently faced by academia and quantum enterprises, we underline the relevance of interdisciplinary cooperation to move emerging quantum industry forward. The review consists of two main sections: Pathways towards the electron flying qubit: We address three routes of single-electron transport in GaAs-based devices focusing on surface acoustic waves, hot-electron emission from quantum dot pumps and Levitons. For each approach, we discuss latest experimental results and point out how numerical simulations facilitate engineering the electron flying qubit. Numerical modelling of quantum devices: We review the full stack of numerical simulations needed for fabrication of the flying qubits. Choosing appropriate models, examples of basic quantum mechanical simulations are explained in detail. We discuss applications of open-source (KWANT) and the commercial (nextnano) platforms for modelling the flying qubits. The discussion points out the large relevance of software tools to design quantum devices tailored for efficient operation.

cond-mat.mes-hall↗

arXiv2021

THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures

We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $\Delta f/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.

physics.optics↗

arXiv2017

Reducing phonon-induced decoherence in solid-state single-photon sources with cavity quantum electrodynamics

Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zero-phonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of temperature. We show that a large coupling to a high quality factor cavity can simultaneously reduce the effect of both phonon-induced sources of decoherence. It first limits the effect of pure dephasing on the zero phonon line with indistinguishabilities above $97\%$ up to $18$ K. Moreover, it efficiently redirects the phonon sidebands into the zero-phonon line and brings the indistinguishability of the full emission spectrum from $87\%$ (resp. $24\%$) without cavity effect to more than $99\%$ (resp. $76\%$) at $0$ K (resp. $20$ K). We provide guidelines for optimal cavity designs that further minimize the phonon-induced decoherence.

quant-ph↗

arXiv2016

Influence of phonons on solid-state cavity-QED investigated using nonequilibrium Green's functions

The influence of electron--phonon interactions on the dynamics of a quantum dot coupled to a photonic cavity mode is investigated using a nonequilibrium Green's function approach. Within a polaron frame, the self-consistent-Born approximation is used to treat the phonon-assisted scattering processes between the quantum dot polaron and the cavity. Two-time correlators of the quantum dot-cavity system are calculated by solving the Kadanoff-Baym equations, giving access to photon spectra and photon indistinguishability. The non-Markovian nature of the interaction with the phonon bath is shown to be very accurately described by our method in various regime of cavity-quantum electrodynamics (cavity-QED). The indistinguishability of the emitted photons emitted at zero temperature are found to be in very good agreement with a previously reported exact diagonalization approach [Phys.~Rev.~B~87,~081308~(2013)]. Besides, our method enables the calculations of photon indistinguishability at finite temperatures and for strong electron-phonon interactions. More generally, our method opens new avenues in the study of open quantum system dynamics coupled to non-Markovian environments.

cond-mat.mes-hall↗

arXiv2015

Contrasting influence of charged impurities on transport and gain in terahertz quantum cascade lasers

Transport and gain properties of a resonant-phonon terahertz quantum cascade laser are calculated using nonequilibrium Green's functions. Impurity scattering is shown to be responsible for contrasting nonlinear effects in the transport and the gain properties. For typical doping concentrations, the current density is found to be weakly sensitive to the impurity scattering strength. In contrast, the calculated gain is found to be very sensitive to the impurity scattering strength. This difference is attributed to the strong momentum dependence of the long-range coupling to charged impurities. Small-momentum impurity scattering is shown to be responsible for an incoherent regime of resonant tunneling processes. These new insights into the crucial role of impurity scattering open a new route of improvement of terahertz quantum cascade lasers by engineering of the doping profile.

cond-mat.mes-hall↗

arXiv2015

Cavity-funneled generation of indistinguishable single photons from strongly dissipative quantum emitters

We investigate theoretically the generation of indistinguishable single photons from a strongly dissipative quantum system placed inside an optical cavity. The degree of indistinguishability of photons emitted by the cavity is calculated as a function of the emitter-cavity coupling strength and the cavity linewidth. For a quantum emitter subject to strong pure dephasing, our calculations reveal that an unconventional regime of high indistinguishability can be reached for moderate emittercavity coupling strengths and high quality factor cavities. In this regime, the broad spectrum of a dissipative quantum system is funneled into the narrow lineshape of a cavity. The associated efficiency is found to greatly surpass spectral filtering effects. Our findings open the path towards on-chip scalable indistinguishable-photon emitting devices operating at room temperature.

cond-mat.mes-hall↗

arXiv2014

Phonon-tuned bright single-photon source

Pure and bright single photon sources have recently been obtained by inserting solid-state emitters in photonic nanowires or microcavities. The cavity approach presents the attractive possibility to greatly increase the source operation frequency. However, it is perceived as technologically demanding because the emitter resonance must match the cavity resonance. Here we show that the spectral matching requirement is actually strongly lifted by the intrinsic coupling of the emitter to its environment. A single photon source consisting of a single InGaAs quantum dot inserted in a micropillar cavity is studied. Phonon coupling results in a large Purcell effect even when the quantum dot is detuned from the cavity resonance. The phonon-assisted cavity enhanced emission is shown to be a good single-photon source, with a brightness exceeding $40$ \% for a detuning range covering 15 cavity linewidths.

cond-mat.mes-hall↗

arXiv2014

Nanowire terahertz quantum cascade lasers

Quantum cascade lasers made of nanowire axial heterostructures are proposed. The dissipative quantum dynamics of their carriers is theoretically investigated using non-equilibrium Green functions. Their transport and gain properties are calculated for varying nanowire thickness, from the classical-wire regime to the quantum-wire regime. Our calculation shows that the lateral quantum confinement provided by the nanowires allows an increase of the maximum operation temperature and a strong reduction of the current density threshold compared to conventional terahertz quantum cascade lasers.

cond-mat.mes-hall↗

arXiv2014

Electron transport in quantum wire superlattices

Electronic transport is theoretically investigated in laterally confined semiconductor superlattices using the formalism of non-equilibrium Green's functions. The transport properties are calculated for nanowire superlattices of varying diameters, from the quantum dot superlattice regime to the quantum well superlattice regime. Scattering processes due to electron-phonon couplings, phonon anharmonicity, charged impurities, surface and interface roughness and alloy disorder are included on a microscopic basis. Elastic scattering mechanisms are treated in a partial coherent way beyond the self-consistent Born approximation. The nature of transport along the superlattice is shown to depend dramatically on the lateral dimensionality. In the quantum wire regime, the electron velocity-field characteristics are predicted to deviate strongly from the standard Esaki-Tsu form, with pronounced current peaks due to integer and fractional resonances with optical phonons.

cond-mat.mes-hall↗

arXiv2009

Decoherence in quantum dots due to real and virtual transitions: a non-perturbative calculation

We investigate theoretically acoustic phonon induced decoherence in quantum dots. We calculate the dephasing of fundamental (interband or intraband) optical transitions due to real and virtual transitions with higher energy levels. Up to two acoustic phonon processes (absorption and/or emission) are taken into account simultaneously in a non-perturbative manner. An analytic expression of acoustic phonon induced broadening is given as a function of the electron-phonon matrix elements and is physically interpreted. The theory is applied to the dephasing of intersublevel transitions in self-assembled quantum dots.

cond-mat.other↗

arXiv2006

Evidence for excitonic polarons in InAs/GaAs quantum dots

We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixed exciton-LO phonon states is calculated using the Fröhlich Hamiltonian. The excitonic polaron energies as well as the oscillator strengths of the interband transitions are determined. An anticrossing is predicted when two exciton-LO phonon states have close enough energies with phonon occupations which differ by one. A good agreement is found between the calculations and the experimental data evidencing the existence of excitonic polarons.

cond-mat.mtrl-sci↗