arXiv subjects

Thomas Heine

Publications and source records attributed to Thomas Heine.

At least 37 records · Page 2Linked to original sources

arXiv2023

Metal-free Stoner and Mott-Hubbard magnetism in 2D polymers with honeycomb lattice

We computationally demonstrate Stoner-ferromagnetic half-metals and antiferromagnetic Mott-Hubbard insulators in metal-free 2D polymers. Coupling radicaloid (hetero)triangulene monomers via strong covalent bonds preserving the in-plane conjugation of the electronic π system yields 2D crystals with long-range magnetic order and magnetic couplings above the Landauer limit. Dual-site honeycomb lattices produce both flat bands and Dirac cones. Depending on the monomers, electron correlations lead to either a bandgap at the Dirac points for antiferromagnetic Mott insulators, or Stoner ferromagnetism with both spin-polarized Dirac cones and flat bands at the Fermi level. These results pioneer a new type of Stoner and Mott-Hubbard magnetism emerging in the electronic pi system of crystalline conjugated 2D polymers.

cond-mat.str-el↗

arXiv2023

Magnetic State Control of Non-van der Waals 2D Materials by Hydrogenation

Controlling the magnetic state of two-dimensional (2D) materials is crucial for spintronic applications. By employing data-mining and autonomous density functional theory calculations, we demonstrate the switching of magnetic properties of 2D non-van der Waals materials upon hydrogen passivation. The magnetic configurations are tuned to states with flipped and enhanced moments. For 2D CdTiO$_3$ - a nonmagnetic compound in the pristine case - we observe an onset of ferromagnetism upon hydrogenation. Further investigation of the magnetization density of the pristine and passivated systems provides a detailed analysis of modified local spin symmetries and the emergence of ferromagnetism. Our results indicate that selective surface passivation is a powerful tool for tailoring magnetic properties of nanomaterials such as non-vdW 2D compounds.

cond-mat.mtrl-sci↗

arXiv2023

Relaxation effects in twisted bilayer molybdenum disulfide: structure, stability, and electronic properties

Manipulating the interlayer twist angle is a powerful tool to tailor the properties of layered two-dimensional crystals. The twist angle has a determinant impact on these systems' atomistic structure and electronic properties. This includes the corrugation of individual layers, formation of stacking domains and other structural elements, and electronic structure changes due to the atomic reconstruction and superlattice effects. However, how these properties change with the twist angle (ta) is not yet well understood. Here, we monitor the change of twisted bilayer MoS2 characteristics as function of ta. We identify distinct structural regimes, with particular structural and electronic properties. We employ a hierarchical approach ranging from a reactive force field through the density-functional-based tight-binding approach and density-functional theory. To obtain a comprehensive overview, we analyzed a large number of twisted bilayers with twist angles in the range 0.2-59.6deg. Some systems include up to half a million atoms, making structure optimization and electronic property calculation challenging. For 13<ta<47, the structure is well-described by a moiré regime composed of two rigidly twisted monolayers. At small ta (ta<3 and 57<ta), a domain-soliton regime evolves, where the structure contains large triangular stacking domains, separated by a network of strain solitons and short-ranged high-energy nodes. The corrugation of the layers and the emerging superlattice of solitons and stacking domains affects the electronic structure. Emerging predominant characteristic features are Dirac cones at K and kagome bands. These features flatten for ta approaching 0 and 60deg. Our results show at which ta range the characteristic features of the reconstruction emerge and give rise to exciting electronics. We expect our findings also to be relevant for other twisted bilayer systems.

cond-mat.mtrl-sci↗

arXiv2023

Giant proton transmembrane transport through sulfophenylated graphene in a direct methanol fuel cell

An ideal proton exchange membrane should only permeate protons and be leak tight for fuels. Graphene is impermeable to water and poorly conducting to protons. Here, we chemically functionalized monolayer graphene to install sulfophenylated sp3 dislocations by diazotization. Selective to protons, transmembrane areal conductances are up to ~50 S/cm2, which is ~5000 fold higher than in pristine graphene. Mounted in a direct methanol fuel cell, sulfophenylated graphene resulted in power densities up to 1.6 W/mg or 123 mW/cm under standard cell operation (60 C), a value ~two-fold larger than micron-thick films of Nafion 117. The combination of sp3 dislocations and polar groups, therefore, allow the creation of hydrophilic ion paths through graphene and unveils a novel route to rationalize transmembrane hydron transport through 2D materials.

physics.chem-ph↗

arXiv2023

A Cu3BHT-Graphene van der Waals Heterostructure with Strong Interlayer Coupling

Two dimensional van der Waals heterostructures (2D are of significant interest due to their intriguing physical properties that are critically defined by the constituent monolayers and their interlayer coupling . However, typical inorganic 2 D vdWhs fall into the weakly coupled region, limiting efficient interfacial charge flow crucial for developing high performance quantum opto electronics. Here, we demonstrate strong interlayer coupling in Cu3 BHT (BHT = benzenehexathiol) graphene vdWhs an organic inorganic bilayer characterized by prominent interlayer charge transfer Monolayer Cu3 BHT with a Kagome lattice is synthesized on the water surface and then coupled with graphene to produce a cm2 scale 2D vdWh. Spectroscopic and electrical studies, along with theoretical calculation s show significant hole transfer from monolayer Cu3 BHT to graphene upon contact , being characteristic fingerprints for strong interlayer coupling This study unveils the great potential of integrating highly pi-conjugated 2D coordination polymers (2DCPs) into 2D vdWhs to explor e intriguing physical phenomena.

physics.app-ph↗

arXiv2023

Edge conductivity in PtSe$_2$ nanostructures

PtSe$_2$ is a promising 2D material for nanoelectromechanical sensing and photodetection in the infrared regime. One of its most compelling features is the facile synthesis at temperatures below 500 °C, which is compatible with current back-end-of-line semiconductor processing. However, this process generates polycrystalline thin films with nanoflake-like domains of 5 to 100 nm size. To investigate the lateral quantum confinement effect in this size regime, we train a deep neural network to obtain an interatomic potential at DFT accuracy and use that to model ribbons, surfaces, nanoflakes, and nanoplatelets of PtSe$_2$ with lateral widths between 5 to 15 nm. We determine which edge terminations are the most stable and find evidence that the electrical conductivity is localized on the edges for lateral sizes below 10 nm. This suggests that the transport channels in thin films of PtSe$_2$ might be dominated by networks of edges, instead of transport through the layers themselves.

cond-mat.mtrl-sci↗

arXiv2022

Structure-imposed electronic topology in cove-edged graphene nanoribbons

In cove-edged zigzag graphene nanoribbons (ZGNR-C), one terminal CH group per length unit is removed on each zigzag edge, forming a regular pattern of coves which controls their electronic structure. Based on three structural parameters that unambiguously characterize the atomistic structure of ZGNR-C, we present a scheme that classifies their electronic state, i.e., if they are metallic, topological insulators or trivial semiconductors, for all possible widths N, unit lengths a and cove position offsets at both edges b, thus showing the direct structure-electronic structure relation. We further present an empirical formula to estimate the band gap of the semiconducting ribbons from N, a, and b. Finally, we identify all geometrically possible ribbon terminations and provide rules to construct ZGNR-C with well-defined electronic structure.

cond-mat.mes-hall↗

arXiv2022

Stacking polymorphism in PtSe$_2$ drastically affects its electromechanical properties

PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device.

cond-mat.mtrl-sci↗

arXiv2021

Main-Group Metal Elements as Promising Active Centers for Single-Atom Catalysts

Current research efforts on single-atom catalysts (SACs) exclusively focus on nonmetal or transition-metal atoms as active centers, while employing main-group metal elements is seemingly excluded because their delocalized s/p-bands are prone to yield a broadened resonance for the interaction with adsorbates. Here, we use high-throughput first-principles calculations to investigate the possible incorporation of Mg, Al and Ga to form graphene-based SACs for NO reduction reaction (NORR) toward NH3. 51 SAC candidates with different metal coordination environment have been computationally screened employing a rationally designed four-step process, yielding six SACs with high catalytic activity and NORR selectivity. The performance is rationalized by the modulation of s/p-band filling of the main-group metals. The adsorption free energy of NO is identified as efficient descriptor for such SACs. The underlying physical mechanism is revealed and generally applicable to other main group metal SACs. These fundamental insights extend SACs to main-group metal elements.

cond-mat.mtrl-sci↗

arXiv2021

Electronic Structures of Two-Dimensional PC6-Type Materials

Two-dimensional (2D) materials may exhibit intriguing band structure features (e.g., Dirac points), that lay far away from the Fermi level. They are, thus, not usable in applications. The semiconducting 2D material PC6 has two Dirac cones above and below the Fermi level. Therefore, it is an ideal playground to demonstrate chemical functionalization methods for shifting the Fermi level in order to access interesting band structure features. PC6 is based on the sqrt(7) x sqrt(7)R19.1deg super cell of graphene with two carbon atoms per unit cell substituted by phosphorous. It is demonstrated how substitution with other heteroatoms that contain a different number of valence electrons, the Dirac points can be accessed. Alternatively, hydrogen atoms can be used as adatoms at the heteroatom sites. This increases electron filling and shifts the Fermi level upwards.

cond-mat.mtrl-sci↗

arXiv2021

A semimetallic square-octagon (fes) two-dimensional polymer with high mobility

The electronic properties of $π$-conjugated two-dimensional (2D) polymers near the Fermi level are determined by structural topology and chemical composition. Thus, tight-binding (TB) calculations of the corresponding fundamental network can be used to explore the parameter space to find configurations with intriguing properties before designing the the atomistic 2D polymer network. The vertex-transitive \textbf{fes} lattice, which is also called square-octagon lattice, is rich in interesting topological features including Dirac points and flat bands. Herein, we study its electronic and topological properties within the TB framework using representative parameters for chemical systems. Secondly, we demonstrate that the rational implementation of band structure features obtained from TB calculations into 2D polymers is feasible with a family of 2D polymers possessing \textbf{fes} structure. A one-to-one band structure correspondence between fundamental network and 2D polymers is found. Moreover, changing the relative length of linkers connecting the triangulene units in the 2D polymers reflect tuning of hopping parameters in the TB model. These perturbations allow to open sizeable local band gaps at various positions in the Brillouin zone. From analysis of Berry curvature flux, none of the polymers exhibits a large topologically non-trivial band gap. However, we find a particular configuration of semimetallic characteristics with separate electron and hole pockets, which possess very low effective masses both for electrons (as small as $m^*_\mathrm{e} = 0.05$) and holes (as small as $m^*_\mathrm{h} = 0.01$).

cond-mat.mtrl-sci↗

arXiv2020

Blue phosphorene bilayer is a two-dimensional metal -- and an unambiguous classification scheme for buckled hexagonal bilayers

High-level first-principles computations predict blue phosphorene bilayer to be a two-dimensional metal. This structure has not been considered before and was identified by employing a block-diagram scheme that yields the complete set of five high-symmetry stacking configurations of buckled honeycomb layers, and allows their unambiguous classification. We show that all of these stacking configurations are stable or at least metastable configurations both for blue phosphorene and gray arsenene bilayers. For blue phosphorene, the most stable stacking configuration has not yet been reported, and surprisingly it is metallic, while all other arrangements are indirect band gap semiconductors. As it is impossible to interchange the stacking configurations by translations, all of them should be experimentally accessible via the transfer of monolayers. The metallic character of blue phosphorene bilayer is caused by its short interlayer distance of 3.01 Å and offers the exceptional possibility to design single elemental all-phosphorus transistors.

cond-mat.mtrl-sci↗

arXiv2020

Analytical Approach to Phonon Calculations in the SCC-DFTB Framework

Detailed derivation of the analytical, reciprocal-space approach of Hessian calculation within the self-consistent-charge density functional based tight-binding framework (SCC-DFTB) is presented. This approach provides an accurate and efficient way for obtaining the SCC-DFTB Hessian of periodic systems. Its superiority with respect to the traditional numerical force differentiation method is demonstrated for doped graphene, graphene nanoribbons, boron-nitride nanotubes, bulk zinc-oxide and other systems.

physics.comp-ph↗

arXiv2020

Artificial Relativistic Molecules

We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The spin-orbit coupling is essential both in forming such Dirac electronic states and stabilizing the artificial molecules by reducing the adatom-substrate interaction. Lead atoms are found to be ideally suited for a maximized relativistic effect. This work initiates the use of novel two dimensional orderings to guide the fabrication of artificial molecules of unprecedented properties.

cond-mat.mtrl-sci↗

arXiv2018

Two dimensional crystals in three dimensions: electronic decoupling of single-layered platelets in colloidal nanoparticles

Two-dimensional crystals, single sheets of layered materials, often show distinct properties desired for optoelectronic applications, such as larger and direct band gaps, valley- and spinorbit effects. Being atomically thin, the low amount of material is a bottleneck in photophysical and photochemical applications. Here, we propose the formation of stacks of two-dimensional crystals intercalated with small surfactant molecules. We show, using first principles calculations, that already the very short surfactant methyl amine electronically decouples the layers. We demonstrate the indirect-direct band gap transition characteristic for Group 6 transition metal dichalcogenides experimentally by observing the emergence of a strong photoluminescence signal for ethoxide-intercalated WSe2 and MoSe2 multilayered nanoparticles with lateral size of about 10 nm and beyond. The proposed hybrid materials offer the highest possible density of the two-dimensional crystals with electronic properties typical for monolayers. Variation of the surfactant's chemical potential allows fine-tuning of electronic properties and potentially elimination of trap states caused by defects.

cond-mat.mtrl-sci↗

arXiv2018

High-performance two-dimensional p-type transistors based on GaSe layers: an ab-initio study

Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state.

cond-mat.mtrl-sci↗

arXiv2018

Two-Dimensional Ferroelastic Topological Insulators in Single-Layer Janus Transition Metal Dichalcogenides MSSe (M=Mo, W)

Two-dimensional topological insulators and two-dimensional materials with ferroelastic characteristics are intriguing materials and many examples have been reported both experimentally and theoretically. Here, we present the combination of both features - a two-dimensional ferroelastic topological insulator that simultaneously possesses ferroelastic and quantum spin Hall characteristics. Using first-principles calculations, we demonstrate Janus single-layer MSSe (M=Mo, W) stable two-dimensional crystals that show the long-sought ferroelastic topological insulator properties. The material features low switching barriers and strong ferroelastic signals, beneficial for applications in nonvolatile memory devices. Moreover, their topological phases harbor sizeable nontrivial band gaps, which supports the quantum spin Hall effect. The unique coexistence of excellent ferroelastic and quantum spin Hall phases in single-layer MSSe provides extraordinary platforms for realizing multi-purpose and controllable devices.

cond-mat.mtrl-sci↗

arXiv2018

Highly sensitive electromechanical piezoresistive pressure sensors based on large-area layered PtSe$_{2}$ films

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe$_{2}$), an exciting and unexplored 2D transition metal dichalcogenides (TMD) material, is particularly interesting because its scalable and low temperature growth process is compatible with silicon technology. Here, we explore the potential of thin PtSe$_{2}$ films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe$_{2}$ films grown by thermally assisted conversion of Pt at a CMOS-compatible temperature of 400°C. We report high negative gauge factors of up to -84.8 obtained experimentally from PtSe$_{2}$ strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe$_{2}$ membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory (DFT) calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe$_{2}$ as a very promising candidate for future NEMS applications, including integration into CMOS production lines.

cond-mat.mtrl-sci↗