arXiv subjects

Thomas J. Penfold

Publications and source records attributed to Thomas J. Penfold.

4 recordsLinked to original sources

arXiv2026

Perspective on a challenge: predicting the photochemistry of cyclobutanone

This Perspective is part of a Special Topic that explored the maturity of nonadiabatic molecular dynamics for predicting photochemical processes. In 2023, a prediction challenge was issued to the community of computational photochemists to simulate the photochemistry of cyclobutanone, photoexcited at 200 nm, and the resulting time-resolved MeV-UED signal. The challenge attracted 15 theoretical predictions from more than 70 researchers, employing a wide range of strategies for electronic structure and nonadiabatic molecular dynamics to predict the time-resolved MeV-UED signal before the experiment had been conducted at SLAC (Stanford, USA). The MeV-UED instrument at Shanghai Jiao Tong University was also used to provide a second independent time-resolved MeV-UED signal for the photochemistry of cyclobutanone. This Perspective discusses the various approaches and strategies used by the participants to predict the photochemistry of cyclobutanone. This work also summarizes the strengths and weaknesses of various methods used for photoexcitation, electronic structure, nonadiabatic dynamics, and calculation of observables, as agreed by the participants during a CECAM workshop dedicated to the results of the challenge and organized in Lausanne in April 2025. This Perspective also collects all the predicted time-resolved MeV-UED signals into a single figure, together with the experimental signal. This challenge (i) demonstrated the qualitative predictive power of nonadiabatic molecular dynamics and (ii) underscore the impact of electronic-structure theory on the outcome of the excited-state dynamics and the need for its careful benchmarking. This effort allowed the community to share practical strategies to perform nonadiabatic dynamics (discussed in the present Perspective) and constitutes a 'calibration' exercise for computational photochemistry.

physics.chem-ph↗

arXiv2025

Unveiling Zn incorporation in CuInS$_2$ quantum dots: X-ray and optical analysis of doping effects, structural modifications and surface passivation

Quantum dots (QDs) exhibit unique properties arising from their reduced size and quantum confinement effects, including exceptionally bright and tunable photoluminescence. Among these, CuInS$_{2}$ QDs have gained significant attention owing to their remarkable broadband emission, making them highly desirable for various optoelectronic applications requiring efficient luminescent nanomaterials. However, maximizing radiative recombination in CuInS$_{2}$ QDs often necessitates minimizing intragap trap states. A common approach involves the introduction of Zn during the synthesis, which typically promotes the formation of a ZnS shell that passivates the QD surface. Despite its importance, the characterization and quantification of Zn incorporation using conventional techniques, such as optical spectroscopy or electron microscopy, remains challenging. In this study, we utilized X-ray absorption spectroscopy (XAS), in both X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectral ranges, to investigate Zn incorporation into CuInS$_{2}$ QDs with element-specific precision. This approach allowed us to detect the formation of a ZnS surface shell and to resolve the spatial distribution of Zn atoms within the QD lattice, distinguishing between Zn as a substituent, or as an interstitial defect. Additionally, we explored the optical and dynamical properties of CuInS$_{2}$ QDs using time-resolved optical spectroscopies, particularly in the presence of electron and hole acceptors. These results provide deeper insights into the role and effectiveness of the Zn-induced passivating layer, paving the way for optimizing QD performance in photoluminescence applications.

cond-mat.mtrl-sci↗

arXiv2024

Selective tracking of charge carrier dynamics in CuInS2 quantum dots

CuInS2 quantum dots have been studied in a broad range of applications, but despite this, the fine details of their charge carrier dynamics remain a subject of intense debate. Two of the most relevant points of discussion are the hole dynamics and the influence of Cu:In synthesis stoichiometry on them. It has been proposed that Cu-deficiency leads to the formation of Cu2+, affecting the localization of holes into Cu defects. Importantly, it is precisely these confined hole states which are used to explain the interesting photoluminescence properties of CuInS2 quantum dots. We use static X-ray spectroscopy to reveal no evidence for a measurable amount of native Cu2+ states in Cu-deficient samples. Instead, the improved properties of these samples are explained by an increase of crystallinity, reducing the concentration of mid gap states. Furthermore, to understand the charge carrier dynamics, herein we employ ultrafast optical transient absorption, and fluorescence up-conversion spectroscopies in combination with ultrafast X-ray absorption spectroscopy using a hard X-ray free electron laser. We demonstrate that in non-passivated samples, holes are transferred from Cu atoms in sub-picosecond timescales. We assign this transfer to occur towards the thiol-based ligands. Finally, we observe that Cu-deficient samples are more robust against the photothermal heating effects of using higher laser fluences. This is not the case for the stoichiometric sample, where heating effects on the structure are directly observed.

physics.chem-ph↗

arXiv2023

Disentangling the Evolution of Electrons and Holes in photoexcited ZnO nanoparticles

The evolution of charge carriers in photoexcited room temperature ZnO nanoparticles in solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast Zn K-edge absorption spectroscopy and ab-initio molecular dynamics (MD) simulations. The photoluminescence is excited at 4.66 eV, well above the band edge, and shows that electron cooling in the conduction band and exciton formation occur in <500 fs, in excellent agreement with theoretical predictions. The X-ray absorption measurements, obtained upon excitation close to the band edge at 3.49 eV, are sensitive to the migration and trapping of holes. They reveal that the 2 ps transient largely reproduces the previously reported transient obtained at 100 ps time delay in synchrotron studies. In addition, the X-ray absorption signal is found to rise in ~1.4 ps, which we attribute to the diffusion of holes through the lattice prior to their trapping at singly-charged oxygen vacancies. Indeed, the MD simulations show that impulsive trapping of holes induces an ultrafast expansion of the cage of Zn atoms in <200 fs, followed by an oscillatory response at a frequency of ~100 cm-1, which corresponds to a phonon mode of the system involving the Zn sub-lattice.

cond-mat.mtrl-sci↗