arXiv subjects

Thomas Poirier

Publications and source records attributed to Thomas Poirier.

16 recordsLinked to original sources

arXiv2026

Enabling Electrical Readout of N\'eel vector reversal in a van der Waals Antiferromagnet

Owing to its robustness against external perturbations and intrinsically ultrafast dynamics, the N\'eel vector in antiferromagnets (AFMs) can enable the development of next-generation spintronic and magnonic devices for memory and computing applications. To realize AFM-based magnetic memory devices, one of the key requirements is to demonstrate electrical readout of 180-degree reversal of N\'eel vector in thin film AFMs, which remains critically missing. In this work, we report experimental demonstration of a novel transport methodology to detect N\'eel vector reversal in atomically thin films of a van der Waals (vdW) based A-type AFM. For this, we utilize spin-dependent electronic band properties of CrSBr by coupling it to a spin-polarized layer, separated by a tunnel barrier. In this configuration, the spin-dependent tunnelling magnetoresistance (MR) becomes sensitive to the relative orientation between the magnetization of the reference electrode and the interfacial sublattice magnetization of the AFM layer, in turn enabling electrical detection of the N\'eel vector orientation. Importantly, the observed MR can also reveal 180-degree reversal of N\'eel vector in even-layers of CrSBr, wherein adjacent sublattice magnetic layers are exactly compensated and the net magnetization vanishes and thus establishes a broadly applicable strategy for electrical detection of N\'eel vector in vdW-based AFMs.

cond-mat.mes-hall↗

arXiv2026

Observation and Control of Spontaneous Magnon Emission from Spin Ensembles in 2D Hexagonal Boron Nitride

Hybrid systems consisting of color centers and magnetic materials provide an appealing solid-state platform for advancing the burgeoning quantum technological revolution. Exploring novel coupling mechanisms between optically active spin defects and quantum degrees of freedom is directly relevant in this context. Here, we report observation and control of spontaneous magnon emission from boron-vacancy centers in 2D hexagonal boron nitride (hBN), an unconventional qubit-magnon dipole coupling channel that dominates in the near-zero temperature limit. The spontaneous magnon emission process starts to be overshadowed by thermal magnon effect as temperature increases, reflecting the crossover from an emission-dominated, effectively cold magnon reservoir to a thermally occupied spin bath where absorption and stimulated processes restore balance. By increasing the spin defect density, we further present that spontaneous magnon emission into a common spin bath could help establish quantum correlations in dense hBN spin ensembles. Our results are quantitatively captured by detailed theoretical modeling, bringing insights into understanding qubit-magnon coupling, correlated spin dynamics, and many-body physics of color centers in the quantum regime.

cond-mat.mes-hall↗

arXiv2026

Probing Azimuthal Anatomy of Hyperbolic Whispering Gallery Modes in hBN

Scattering-type scanning near-field optical microscopy (s-SNOM) is a powerful tool for investigating polaritonic modes. However, an inherent limitation of this technique is that excitation and detection occur at the same location. This constraint makes it challenging to resolve excitations with complex spatial structures, which can exhibit delicate dependence on the in-coupling conditions. Here, we present a strategy to overcome this limitation by introducing an auxiliary cavity, which serves as a stationary near-field excitation source. This configuration allows the s-SNOM tip to act solely as a detector, and decouples excitation from detection. We apply this approach to whispering gallery modes (WGMs) of hyperbolic phonon-polaritons in hexagonal boron nitride resonators. Through spatially resolved near-field maps we directly observe subwavelength polaritonic WGMs with large and discrete azimuthal momentum ($k_\phi / k_0$ up to 15). This allows us to map the frequency and angular behavior of the modes. Notably, we observe dynamic tuning of the effective refractive index by the WGMs to preserve consistent azimuthal momentum $k_\phi$ under varying excitation conditions. Numerical simulations support the experimental observations and confirm the observation of hyperbolic WGMs. This approach enables direct visualization of previously hidden mode structures in hyperbolic cavities and opens new pathways for momentum-controlled polaritonic device engineering.

cond-mat.mes-hall↗

arXiv2026

Landau Zener Interaction Enhanced Quantum Sensing in Spin Defects of Hexagonal Boron Nitride

Negatively charged boron vacancies (V$_{\text{B}}^{-}$) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferrable onto samples. However, broad hyperfine-split spin transitions of the ensemble pose challenges for quantum sensing with conventional resonant excitation due to limited spectral coverage. While isotopically enriched hBN using $^{10}$B and $^{15}$N isotopes (h$^{10}$B$^{15}$N) exhibits sharper spectral features, significant inhomogeneous broadening persists. We demonstrate that, implemented via frequency modulation on an FPGA, a frequency-ramped microwave pulse achieves around 4-fold greater $|0\rangle\rightarrow|-1\rangle$ spin-state population transfer and thus contrast than resonant microwave excitation and thus 16-fold shorter measurement time for spin relaxation based quantum sensing. Quantum dynamics simulations reveal that an effective two-state Landau-Zener model captures the complex relationship between population inversion and pulse length with relaxations incorporated. Our approach is robust and valuable for quantum relaxometry with spin defects in hBN in noisy environments.

quant-ph↗

arXiv2025

Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials

Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative F\"orster resonance energy transfer (FRET) between $V_B^-$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^-$ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^-$ defects.

cond-mat.mtrl-sci↗

arXiv2025

Coherent control of nitrogen nuclear spins via the V$_B^-$-center in hexagonal boron nitride

Charged boron vacancies (V$_\text{B}^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for quantum nanoscale sensing and imaging. While these primarily involve electron spins, nuclear spins provide an additional resource for quantum operations. This work presents a comprehensive experimental and theoretical study of the properties and coherent control of the nearest-neighbor $^{15}$N nuclear spins of V$_\text{B}^-$-ensembles in isotope-enriched h$^{10}$B$^{15}$N. Multi-nuclear spin states are selectively addressed, enabled by state-specific nuclear spin transitions arising from spin-state mixing. We perform Rabi driving between selected state pairs, define elementary quantum gates, and measure longer than 10~$\mu$s nuclear Rabi coherence times. We observe a two orders of magnitude nuclear g-factor enhancement that underpins fast nuclear spin gates. Accompanying numerical simulations provide a deep insight into the underlying mechanisms. These results establish the foundations for leveraging nuclear spins in V$_\text{B}^-$ center-based quantum applications, particularly for extending coherence times and enhancing the sensitivity of 2D quantum sensing foils.

cond-mat.mtrl-sci↗

arXiv2025

Quantum sensing with a spin ensemble in a two-dimensional material

Quantum sensing with solid-state spin defects has transformed nanoscale metrology, offering sub-wavelength spatial resolution with exceptional sensitivity to multiple signal types. Maximizing these advantages requires minimizing both the sensor-target separation and the detectable signal threshold. However, leading platforms such as nitrogen-vacancy (NV) centers in diamond suffer from performance degradation near surfaces or in nanoscale volumes, motivating the search for optically addressable spin sensors in atomically thin, two-dimensional (2D) van der Waals materials. Here, we present a comprehensive experimental framework to probe a 2D spin ensemble, including its Hamiltonian, coherent sensing dynamics, and noise environment. Using a central spin system in a hexagonal boron nitride (hBN) crystal, we fully map the hyperfine interactions with proximal nuclear spins, demonstrate switchable magnetic and electric noise sensing, and introduce a method to accurately reconstruct the environmental noise spectrum while explicitly accounting for quantum control imperfections. We achieve a record coherence time of $80~\mu\mathrm{s}$ under dynamical decoupling, enabling sub-microtesla AC magnetic sensitivity at a $10~\mathrm{nm}$ target distance. Leveraging the broad opportunities for defect engineering in atomically thin hosts, these results lay the foundation for next-generation quantum sensors with ultrahigh sensitivity, tunable noise selectivity, and versatile functionalities.

quant-ph↗

arXiv2025

Isofrequency spin-wave imaging using color center magnetometry for magnon spintronics

Magnon spintronics aims to harness spin waves in magnetic films for information technologies. Color center magnetometry is a promising tool for imaging spin waves, using electronic spins associated with atomic defects in solid-state materials as sensors. However, two main limitations persist: the magnetic fields required for spin-wave control detune the sensor-spin detection frequency, and this frequency is further restricted by the color center nature. Here, we overcome these limitations by decoupling the sensor spins from the spin-wave control fields -selecting color centers with intrinsic anisotropy axes orthogonal to the film magnetization- and by using color centers in diamond and hexagonal boron nitride to operate at complementary frequencies. We demonstrate isofrequency imaging of field-controlled spin waves in a magnetic half-plane and show how intrinsic magnetic anisotropies trigger bistable spin textures that govern spin-wave transport at device edges. Our results establish color center magnetometry as a versatile tool for advancing spin-wave technologies.

cond-mat.mes-hall↗

arXiv2025

Temperature-dependent Optical and Polaritonic Properties of hBN-encapsulated Monolayer TMDs

Monolayer transition metal dichalcogenides (TMDs) support robust excitons in the visible to near-infrared spectral range. Their reduced dielectric screening results in large binding energies, and combined with a direct bandgap in monolayer form, these excitons dominate the optical response of TMDs. In this work, we present a comprehensive investigation of the temperature-dependent optical and polaritonic properties of high-quality, flux-grown $\mathrm{WS_2}$, $\mathrm{MoS_2}$, $\mathrm{WSe_2}$, and $\mathrm{MoSe_2}$ monolayers, encapsulated by hBN, in the full temperature range between $5-300 \mathrm{K}$. Using reflection spectroscopy measurements, we evaluate and compare the optical and polaritonic constituents of the TMD excitons in terms of oscillator strength, linewidth and negative permittivity. We find that it is $\mathrm{MoSe_2}$ that exhibits the most pronounced optical and polaritonic response, stemming from its rapid linewidth narrowing at low temperatures, as compared to the temperature-dependent response of the other TMDs. In addition, we find that all four TMDs exhibits a temperature-dependent negative real part permittivity, thus supporting surface-exciton-polaritons. We derive their dispersion relation, confinement factors and losses, similarly revealing that $\mathrm{MoSe_2}$ exhibit enhanced polaritonic properties. These findings establish a comparative framework for understanding the optical and polaritonic properties of monolayer TMDs, with implications on their utilization in optoelectronic devices based on 2D semiconductors.

physics.optics↗

arXiv2025

The Transmission Line Model for 2D Materials and van der Waals Heterostructures

Van der Waals heterostructures (VdWHs) composed of 2D materials have attracted significant attention in recent years due to their intriguing optical properties, such as strong light-matter interactions and large intrinsic anisotropy. In particular, VdWHs support a variety of polaritons-hybrid quasiparticles arising from the coupling between electromagnetic waves and material excitations-enabling the confinement of electromagnetic radiation to atomic scales. The ability to predict and simulate the optical response of 2D materials heterostructures is thus of high importance, being commonly performed until now via methods such as the TMM, or Fresnel equations. While straight forward, these often yield long and complicated expressions, limiting intuitive and simple access to the underlying physical mechanisms that govern the optical response. In this work, we demonstrate the adaptation of the transmission line model for VdWHs, based on expressing its constituents by distributed electrical circuit elements described by their admittance. Since the admittance carries fundamental physical meaning of the material response to electromagnetic fields, the approach results in a system of propagating voltage and current waves, offering a compact and physically intuitive formulation that simplifies algebraic calculations, clarifies the conditions for existence of physical solutions, and provides valuable insight into the fundamental physical response. To demonstrate this, we derive the transmission line analogs of bulk to monolayer 2D materials and show it can be used to compute the reflection/transmission coefficients, polaritonic dispersion relations, and electromagnetic field distributions in a variety of VdWHs, and compare them to experimental measurements yielding very good agreement. This method provides a valuable tool for exploring and understanding the optical response of layered 2D systems.

physics.optics↗

arXiv2025

Probing Boron Vacancy Defects in hBN via Single Spin Relaxometry

Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy to discover, read out, and spatially map arbitrary spin-based quantum sensors at the nanoscale. Using the boron vacancy ($\mathrm{V}_\mathrm{B}^-$) center in hexagonal boron nitride$\unicode{x2013}$an emerging two-dimensional spin system$\unicode{x2013}$as a model, we detect its electron spin resonance indirectly via changes in the spin relaxation time ($T_1$) of a nearby NV center, eliminating the need for optical excitation or fluorescence detection of the $\mathrm{V}_\mathrm{B}^-$. Cross-relaxation between NV and $\mathrm{V}_\mathrm{B}^-$ ensembles significantly reduces NV $T_1$, enabling quantitative nanoscale mapping of defect densities beyond the optical diffraction limit and clear resolution of hyperfine splitting in isotopically enriched h$^{10}$B$^{15}$N. Our method demonstrates interactions between 3D and 2D spin sensors, establishing NV centers as versatile probes for characterizing otherwise inaccessible spin defects.

cond-mat.mtrl-sci↗

arXiv2025

The Importance of Pure Dephasing in the Optical Response of Excitons in High-quality van der Waals Heterostructures

Excitons in monolayer transition metal dichalcogenides (TMDs) dominate their optical response due to exceptionally large binding energies arising from their two-dimensional nature. Several theoretical models have been proposed to describe this excitonic behavior, however, it remains unclear which model most accurately captures the underlying physical properties of the response. In this work, we experimentally measure the optical response of high-quality monolayer TMD heterostructures and compare the results with the different theoretical models to address this uncertainty. We find that in high-quality heterostructures, quantum mechanical interactions in the form of pure dephasing plays a dominant role, which has been challenging to isolate experimentally in previous studies. Furthermore, accounting for an additional decay rate to the commonly used radiative and non-radiative rates is found to be important for the accurate description of the excitonic response. These findings establish a robust framework for understanding and predicting the optical properties of TMD-based heterostructures, crucial for both fundamental research and optoelectronic applications.

cond-mat.mes-hall↗

arXiv2025

Charge state tuning of spin defects in hexagonal boron nitride

Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negatively charged state to the optically inactive doubly negatively charged state when sandwiched between graphene electrodes. Notably, there is a photoluminescence quenching of a few percent upon the application of a bias voltage between the electrodes. Our findings emphasize the critical importance of considering the charge state of optically active defects in 2D materials, while also showing that the negatively charged boron vacancy remains robust against external perpendicular electric fields. This stability makes it a promising candidate for integration into various van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2025

Probing Stress and Magnetism at High Pressures with Two-Dimensional Quantum Sensors

Pressure serves as a fundamental tuning parameter capable of drastically modifying all properties of matter. The advent of diamond anvil cells (DACs) has enabled a compact and tabletop platform for generating extreme pressure conditions in laboratory settings. However, the limited spatial dimensions and ultrahigh pressures within these environments present significant challenges for conventional spectroscopy techniques. In this work, we integrate optical spin defects within a thin layer of two-dimensional (2D) materials directly into the high-pressure chamber, enabling an in situ quantum sensing platform for mapping local stress and magnetic environments up to 4~GPa. Compared to nitrogen-vacancy (NV) centers embedded in diamond anvils, our 2D sensors exhibit around three times stronger response to local stress and provide nanoscale proximity to the target sample in heterogeneous devices. We showcase the versatility of our approach by imaging both stress gradients within the high-pressure chamber and a pressure-driven magnetic phase transition in a room-temperature self-intercalated van der Waals ferromagnet, Cr$_{1+\delta}$Te$_2$. Our work demonstrates an integrated quantum sensing device for high-pressure experiments, offering potential applications in probing pressure-induced phenomena such as superconductivity, magnetism, and mechanical deformation.

cond-mat.mes-hall↗

arXiv2024

On the origin of anomalous hysteresis in graphite/boron nitride transistors

Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gate doesn't work" (GDW) or "electron ratchet" effect, has been seen in certain individual vdW devices that seem otherwise unexceptional. When it occurs, this hysteresis phenomenon is striking and robust, yet it is difficult to reliably reproduce between devices and, largely as a result, its origin remains disputed. Most devices where it has been seen have a bilayer graphene channel and nominal rotational alignment between the graphene and hBN, which has engendered explanations based on properties of bilayer graphene combined with moir\'e effects. Here, we report our studies of the phenomenon observed in devices that have multilayer graphene channels. We find that the effect can occur in devices with graphite channels that have many more than two graphene layers, in which case it is unambiguously associated with just one surface of the graphite. It can also survive to room temperature, occur in the absence of intentional rotational alignment with hBN, persist when a monolayer of WSe2 is inserted between the graphene and hBN, and exhibit continuous relaxation on timescales of hours or longer. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered.

cond-mat.mes-hall↗

arXiv2024

Intrinsic high-fidelity spin polarization of charged vacancies in hexagonal boron nitride

The negatively charged boron vacancy ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN) has garnered significant attention among defects in two-dimensional materials. This owes, in part, to its deterministic generation, well-characterized atomic structure, and optical polarizability at room temperature. We investigate the latter through extensive measurements probing both the ground and excited state polarization dynamics. We develop a semiclassical model based on these measurements that predicts a near-unity degree of spin polarization, surpassing other solid-state spin defects under ambient conditions. Building upon our model, we include the presence of nuclear spin degrees of freedom adjacent to the $\mathrm{V}_{\mathrm{B}}^-$ and perform a comprehensive set of Lindbladian numerics to investigate the hyperfine-induced polarization of the nuclear spins. Our simulations predict a number of important features that emerge as a function of magnetic field which are borne out by experiment.

quant-ph↗