SearcharxivSearch

arXiv subjects

Thomas Schenkel

Publications and source records attributed to Thomas Schenkel.

At least 19 recordsLinked to original sources

Robust Quantum Sensing via Prethermal Spin Orbits

Practical performance of quantum sensors is often curtailed by uncontrolled environmental drift (bias-field instability, temperature fluctuations, mechanical vibration), background fields, and imperfect control pulses. This motivates developing physical mechanisms that intrinsically compensate for such perturbations while retaining high sensitivity to target fields. We introduce an interaction-protected magnetometry scheme where periodic driving steers the collective magnetization onto two long-lived, prethermal Floquet "orbit" axes well-separated on the Bloch sphere. Rapid toggling between these axes encodes target fields as a differential signal, whereas background fields appear as common-mode motion that is strongly rejected, achieving >1000-fold suppression while canceling prethermal transients. This enables accurate reconstruction of rapidly varying audio-band magnetic signals without predictive filtering or spectral tuning. We provide an experimental proof-of-principle using a dense ensemble of coupled nuclear spins, operated here as a broadband (0-1 kHz) magnetometer. The protocol is remarkably tolerant to imperfections, operating robustly across millions of pulses under pulse-angle (~10{\deg}) and pulse frequency (>1 kHz) errors, large bias-field drifts (>50 $\mathrm{\mu}$T), temperature variations over 150 K, and harsh mechanical vibrations. These results establish Floquet prethermalization as a resource for robust quantum sensors that combines broadband magnetic-field sensitivity with intrinsic immunity to diverse environmental and control perturbations, opening a path toward stable quantum metrology beyond controlled laboratory conditions.

quant-ph

Enhanced nuclear fusion in the sub-keV energy regime

Nuclear fusion requires overcoming or traversing a repulsive Coulomb barrier of hundreds of kiloelectronvolts, rendering the probability of fusion at sub-keV energies vanishingly small. Yet in condensed matter, the electronic and structural environment of reacting nuclei can profoundly alter fusion rates. Here we demonstrate that deuterium-deuterium fusion within metallic foils exhibits a pronounced enhancement and reaction yield plateau below energies of 2.5 keV- contrary to the expected exponential suppression with decreasing energy. Using a dual-chamber platform that combines electrochemical deuterium loading with ion-beam bombardment, we show that fusion yields in palladium and titanium hydrides are enhanced by over 10^18 compared to theoretical bare-nucleus fusion rates. These results demonstrate that access to low-energy fusion processes can be governed by materials degrees of freedom. This materials-driven fusion regime establishes a reproducible, tunable framework for studying and ultimately engineering nuclear reactions in solids. While the reaction rates reported here are low, these insights into materials-modulated fusion processes offer a potential foundation for understanding how condensed-matter environments could influence future fusion-energy concepts.

nucl-ex

Entanglement of a nuclear spin qubit register in silicon photonics

Color centers provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T center in silicon is an emerging spin-photon interface that combines telecom O-band optical transitions and an electron spin in a scalable photonics platform. In this work, we demonstrate the initialization, coherent control, and state readout of a three-qubit register based on the electron spin of a T center coupled to a hydrogen and a silicon nuclear spin. The spin register exhibits spin echo coherence times of $0.41(2)$~ms for the electron spin, $112(12)$~ms for the hydrogen nuclear spin, and $67(7)$~ms for the silicon nuclear spin. We use nuclear-nuclear two-qubit gates to generate entanglement between the two nuclear spins with a fidelity of $F=0.77(3)$ and a coherence time of $T^*_2=2.60(8)$~ms. Our results show that a T center in silicon photonics can realize a multi-qubit register with an optical interface for quantum communication.

quant-ph

Laser-induced spectral diffusion of T centers in silicon nanophotonic devices

Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T center frequency and a probe pulse to measure frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time leads to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral diffusion mechanism for T centers in devices, and inform materials and feedback strategies for indistinguishable photon generation.

quant-ph

Dephasing of ion beams as Magnetic Vortex Acceleration regime transitions into a bubble-like field structure

The interaction of an ultra-intense laser pulse with a near critical density target results in the formation of a plasma channel, a strong azimuthal magnetic field and moving vortices. An application of this is the generation of energetic and collimated ion beams via Magnetic Vortex Acceleration. The optimized regime of Magnetic Vortex Acceleration is becoming experimentally accessible with new high intensity laser beamlines coming online and advances made in near critical density target fabrication. The robustness of the acceleration mechanism with realistic experimental conditions is examined with three-dimensional simulations. Of particular interest is the acceleration performance with different laser temporal contrast conditions, in some cases leading to pre-expanded target profiles prior to the arrival of the main pulse. Preplasma effects on the structure of the accelerating fields is explored, including a detailed analysis of the ion beam properties and the efficiency of the process. Improved scaling laws for the MVA mechanism, including the laser focal spot size effects, are presented.

physics.plasm-ph

Factors influencing quantum evaporation of helium from polar semiconductors from first principles

While there is much indirect evidence for the existence of dark matter (DM), to date it has evaded detection. Current efforts focus on DM masses over $\sim$GeV -- to push the sensitivity of DM searches to lower masses, new DM targets and detection schemes are needed. In this work, we focus on the latter - a novel detection scheme recently proposed to detect ~10-100 meV phonons in polar target materials. Previous work showed that well-motivated models of DM can interact with polar semiconductors to produce an athermal population of phonons. This new sensing scheme proposes that these phonons then facilitate quantum evaporation of $^3$He from a van der Waals film deposited on the target material. However, a fundamental understanding of the underlying process is still unclear, with several uncertainties related to the precise rate of evaporation and how it can be controlled. In this work, we use \textit{ab initio} density functional theory (DFT) calculations to compare the adsorption energies of helium atoms on a polar target material, sodium iodide (NaI), to understand the underlying evaporation physics. We explore the role of surface termination, monolayer coverage and elemental species on the rate of He evaporation from the target material. Using this, we discuss the optimal target features for He-evaporation experiments and their range of tunability through chemical and physical modifications such as applied field and surface termination.

hep-ph

Design Optimization of Permanent-Magnet Based Compact Transport Systems for Laser-Driven Proton Beams

Laser-driven (LD) ion acceleration has been explored in a newly constructed short focal length beamline at the BELLA petawatt facility (interaction point 2, iP2). For applications utilizing such LD ion beams, a beam transport system is required, which for reasons of compactness be ideally contained within 3 m. The large divergence and energy spread of LD ion beams present a unique challenge to transporting them compared to beams from conventional accelerators. This work gives an overview of proposed compact transport designs that can satisfy different requirements depending on the application for the iP2 proton beamline such as radiation biology, material science, and high energy density science. These designs are optimized for different parameters such as energy spread and peak proton density according to an application's need. The various designs consist solely of permanent magnet elements, which can provide high magnetic field gradients on a small footprint. While the field strengths are fixed, we have shown that the beam size and energy can be tuned effectively by varying the placement of the magnets. The performance of each design was evaluated based on high order particle tracking simulations of typical LD proton beams. A more detailed investigation was carried out for a design to deliver 10 MeV LD accelerated ions for radiation biology applications. With these transport system designs, the iP2 beamline is ready to house various application experiments.

physics.acc-ph

Optical and spin properties of nitrogen vacancy centers formed along the tracks of high energy heavy ions

Exposure of matter to high energy, heavy ions induces defects along the trajectories of the ions through electronic and nuclear energy loss processes. Defects, including color centers, can recombine or form along latent damage tracks in many materials, such as insulators and semiconductors. Latent tracks in diamond were only recently observed. Here, we report on color center formation in diamond along the latent tracks of 1 GeV gold and uranium ions. Using depth-resolved photoluminescence, we observe direct formation of single vacancy related color centers (GR1-centers) along the ion tracks. Mobile vacancies can form NV-centers with native nitrogen atoms during thermal annealing. Molecular dynamics simulations show that isolated vacancies and vacancy clusters form through electronic stopping processes, leading to color center formation along ion trajectories from the sample surface to a depth of about 25 microns. We further report on the creation of individually isolated quasi-1D chains of NV-centers by using 1 GeV Au ions with a dilute fluence. The individual 1D NV-chains appear as isolated bright luminescence strings and present competitive electron spin properties compared to a background of NV-centers. Such spin textures can be explored as building blocks for applications in quantum information processing and quantum sensing.

quant-ph

Latched Detection of Zeptojoule Spin Echoes with a Kinetic Inductance Parametric Oscillator

When strongly pumped at twice their resonant frequency, non-linear resonators develop a high-amplitude intracavity field, a phenomenon known as parametric self-oscillations. The boundary over which this instability occurs can be extremely sharp and thereby presents an opportunity for realizing a detector. Here we operate such a device based on a superconducting microwave resonator whose non-linearity is engineered from kinetic inductance. The device indicates the absorption of low-power microwave wavepackets by transitioning to a self-oscillating state. Using calibrated wavepackets we measure the detection efficiency with zeptojoule energy wavepackets. We then apply it to measurements of electron spin resonance, using an ensemble of $^{209}$Bi donors in silicon that are inductively coupled to the resonator. We achieve a latched-readout of the spin signal with an amplitude that is five hundred times greater than the underlying spin echoes.

quant-ph

Database of semiconductor point-defect properties for applications in quantum technologies

Solid-state point defects are attracting increasing attention in the field of quantum information science, because their localized states can act as a spin-photon interface in devices that store and transfer quantum information, which have been used for applications in quantum computing, sensing, and networking. In this work we have performed high-throughput calculations of over 50,000 point defects in various semiconductors including diamond, silicon carbide, and silicon. Focusing on quantum applications, we characterize the relevant optical and electronic properties of these defects, including formation energies, spin characteristics, transition dipole moments, zero-phonon lines. We find 2331 composite defects which are stable in intrinsic silicon, which are then filtered to identify many new optically bright telecom spin qubit candidates and single-photon sources. All computed results and relaxed defect structures are made publicly available online at quantumdefects.com, a living database of defect characteristics which will be continually expanded with new defects and properties, and will enable researchers to select defects tailored to their applications.

quant-ph

Quantum emitter formation dynamics and probing of radiation induced atomic disorder in silicon

Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder in silicon for a series of MeV proton flux conditions. Photoluminescence results reveal that the G-centers are formed more efficiently by pulsed proton irradiation than continuous wave proton irradiation. The enhanced transient excitations and dynamic annealing within nanoseconds allows optimizing the ratio of G-center formation to nonradiative defect accumulation. The G-centers preserve narrow linewidths of about 0.1 nm when they are generated by moderate pulsed proton fluences, while the linewidth broadens significantly as the pulsed proton fluence increases. This implies vacancy/interstitial clustering by overlapping collision cascades. Tracking G-center properties for a series of irradiation conditions enables sensitive probing of atomic disorder, serving as a complimentary analytical method for sensing damage accumulation. Aided by ${\it ab}$ ${\it initio}$ electronic structure calculations, we provide insight into the atomic disorder-induced inhomogeneous broadening by introducing vacancies and silicon interstitials in the vicinity of a G-center. A vacancy leads to a tensile strain and can result in either a redshift or blueshift of the G-center emission, depending on its position relative to the G-center. Meanwhile, Si interstitials lead to compressive strain, which results in a monotonic redshift. High flux and tunable ion pulses enable the exploration of fundamental dynamics of radiation-induced defects as well as methods for defect engineering and qubit synthesis for quantum information processing.

quant-ph

Single Phonon Detection for Dark Matter via Quantum Evaporation and Sensing of $^3$Helium

Dark matter is five times more abundant than ordinary visible matter in our Universe. While laboratory searches hunting for dark matter have traditionally focused on the electroweak scale, theories of low mass hidden sectors motivate new detection techniques. Extending these searches to lower mass ranges, well below 1 GeV/c$^2$, poses new challenges as rare interactions with standard model matter transfer progressively less energy to electrons and nuclei in detectors. Here, we propose an approach based on phonon-assisted quantum evaporation combined with quantum sensors for detection of desorption events via tracking of spin coherence. The intent of our proposed dark matter sensors is to extend the parameter space to energy transfers in rare interactions to as low as a few meV for detection of dark matter particles in the keV/c$^2$ mass range.

hep-ex

All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Silicon is the most scalable optoelectronic material, and it has revolutionized our lives in many ways. The prospect of quantum optics in silicon is an exciting avenue because it has the potential to address the scaling and integration challenges, the most pressing questions facing quantum science and technology. We report the first all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the quantum center. Our work opens avenues for large-scale integrated all-silicon cavity quantum electrodynamics and quantum photon interfaces with applications in quantum communication, sensing, imaging, and computing.

quant-ph

In-situ amplification of spin echoes within a kinetic inductance parametric amplifier

The use of superconducting micro-resonators in combination with quantum-limited Josephson parametric amplifiers has in recent years lead to more than four orders of magnitude improvement in the sensitivity of pulsed Electron Spin Resonance (ESR) measurements. So far, the microwave resonators and amplifiers have been designed as separate components, largely due to the incompatibility of Josephson junction-based devices with even moderate magnetic fields. This has led to complex spectrometers that operate under strict environments, creating technical barriers for the widespread adoption of the technique. Here we circumvent this issue by inductively coupling an ensemble of spins directly to a weakly nonlinear microwave resonator, which is engineered from a magnetic field-resilient thin superconducting film. We perform pulsed ESR measurements with a $1$~pL effective mode volume and amplify the resulting spin signal using the same device, ultimately achieving a sensitivity of $2.8 \times 10^3$ spins in a single-shot Hahn echo measurement at a temperature of 400 mK. We demonstrate the combined functionalities at fields as large as 254~mT, highlighting the technique's potential for application under more conventional ESR operating conditions.

quant-ph

Phonon Induced Spin Dephasing Time of Nitrogen Vacancy Centers in Diamond from First Principles

Spin qubits with long dephasing times are an essential requirement for the development of new quantum technologies and have many potential applications ranging from quantum information processing to quantum memories and quantum networking. Here we report a theoretical study and the calculation of the spin dephasing time of defect color centers for the negatively charged nitrogen vacancy center in diamond. We employ ab initio density functional theory to compute the electronic structure, and extract the dephasing time using a cumulant expansion approach. We find that phonon-induced dephasing is a limiting factor for T2 at low temperatures, in agreement with recent experiments that use dynamical decoupling techniques. This approach can be generalized to other spin defects in semiconductors, molecular systems, and other band gapped materials.

quant-ph

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band, making them promising building blocks for quantum networks between computing nodes. The two-carbon G-center, self-interstitial W-center, and spin-$1/2$ T-center are the most intensively studied silicon defect centers, yet despite this, there is no consensus on the precise configurations of defect atoms in these centers, and their electronic structures remain ambiguous. Here we employ \textit{ab initio} density functional theory to characterize these defect centers, providing insight into the relaxed structures, bandstructures, and photoluminescence spectra, which are compared to experimental results. Motivation is provided for how these properties are intimately related to the localization of electronic states in the defect centers. In particular, we present the calculation of the zero-field splitting for the excited triplet state of the G-center defect as the structure is transformed from the A-configuration to the B-configuration, showing a sudden increase in the magnitude of the $D_{zz}$ component of the zero-field splitting tensor. By performing projections onto the local orbital states of the defect, we analyze this transition in terms of the symmetry and bonding character of the G-center defect which sheds light on its potential application as a spin-photon interface.

cond-mat.mtrl-sci

Online Charge Measurement for Petawatt Laser-Driven Ion Acceleration

Laser-driven ion beams have gained considerable attention for their potential use in multidisciplinary research and technology. Pre-clinical studies into their radiobiological effectiveness have established the prospect of using laser-driven ion beams for radiotherapy. In particular, research into the beneficial effects of ultra-high instantaneous dose rates is enabled by the high ion bunch charge and uniquely short bunch lengths present for laser-driven ion beams. Such studies require reliable, online dosimetry methods to monitor the bunch charge for every laser shot to ensure that the prescribed dose is accurately applied to the biological sample. In this paper we present the first successful use of an Integrating Current Transformer (ICT) for laser-driven ion accelerators. This is a non-invasive diagnostic to measure the charge of the accelerated ion bunch. It enables online dose measurements in radiobiological experiments and facilitates ion beam tuning, in particular, optimization of the laser ion source and alignment of the proton transport beamline. We present the ICT implementation and the correlation with other diagnostics such as radiochromic films, a Thomson parabola spectrometer and a scintillator.

physics.acc-ph

Defect engineering of silicon with ion pulses from laser acceleration

Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.

cond-mat.mtrl-sci