arXiv subjects

Thomas Souvignet

Publications and source records attributed to Thomas Souvignet.

3 recordsLinked to original sources

arXiv2026

From Amorphous to Amorphous-Crystalline Mixed-Phase Boron Nitride: Evolution of the Thermal and Elastic Properties

Amorphous boron nitride (aBN) is a promising dielectric and protective coating, yet its nanoscale heat dissipation and elastic response remain poorly quantified. Here we synthesize a variety of BN thin films by borazine-based chemical vapor deposition (800-1000 C) and study the temperature-driven structural transition from fully amorphous networks to mixed amorphous-crystalline films with embedded BN nanocrystallites.Frequency-domain thermoreflectance data show an ultralow, thickness-dependent cross-plane thermal conductivity for aBN (kout < 0.5 W m-1 K-1 for 10-40 nm), which increases systematically with crystalline order up to 1.5 W m-1 K-1. Micro-Brillouin light scattering and finite-element modelling reveal a concomitant stiffening, with Young's modulus rising from 7.5 +/- 0.7 GPa (800 C) to 53 +/- 5 GPa (1000 C). Green-Kubo molecular dynamics simulations rationalize these trends via bonding topology and vibrational transport, and highlight how oxygen, hydrogen and carbon impurities and composition provide practical knobs to further tune the thermal and mechanical responses in BN films for improving nano-electronics, interconnects and coating applications.

cond-mat.mtrl-sci↗

arXiv2025

Atomic-Scale Origins of Oxidation Resistance in Amorphous Boron Nitride

Amorphous boron nitride (\textrm{$α$}-BN) is a promising ultrathin barrier for nanoelectronics, yet the atomistic mechanisms governing its chemical stability remain poorly understood. Here, we investigate the structure-property relationship that dictates the oxidation of \textrm{$α$}-BN using a combination of machine-learning molecular dynamics simulations and angle-resolved X-ray photoelectron spectroscopy. The simulations reveal that the film structure, controlled by synthesis conditions, is the critical factor determining oxidation resistance. Dense, chemically ordered networks with a high fraction of B-N bonds effectively resist oxidation by confining it to the surface, whereas porous, defect-rich structures with abundant homonuclear B-B and N-N bonds permit oxygen penetration and undergo extensive bulk degradation. These computational findings are consistent with experimental trends observed in \textrm{$α$}-BN films grown by chemical vapour deposition. XPS analysis shows that a film grown at a higher temperature develops a more ordered structure with a B/N ratio nearer to stoichiometric and exhibits superior resistance to surface oxidation compared to its more defective, lower-temperature counterpart. Together, these results demonstrate that the oxidation resistance of \textrm{$α$}-BN is a tunable property directly linked to its atomic-scale morphology, providing a clear framework for engineering chemically robust dielectric barriers for future nanoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2022

A forensic analysis of the Google Home: repairing compressed data without error correction

This paper provides a detailed explanation of the steps taken to extract and repair a Google Home's internal data. Starting with reverse engineering the hardware of a commercial off-the-shelf Google Home, internal data is then extracted by desoldering and dumping the flash memory. As error correction is performed by the CPU using an undisclosed method, a new alternative method is shown to repair a corrupted SquashFS filesystem, under the assumption of a single or double bitflip per gzip-compressed fragment. Finally, a new method to handle multiple possible repairs using three-valued logic is presented.

cs.CR↗