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Thomas Unold

Publications and source records attributed to Thomas Unold.

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Large Jahn-Teller shifts and splittings observed in halide perovskite CsPbBr3

Despite the fundamental role of Jahn-Teller effects of first and second order in shaping structural and electronic properties, there is hardly any observation in angle-resolved photoemission of solids. In oxide and halide perovskites, band structure replicas have occasionally been reported as fingerprints of Jahn-Teller effects, but no accompanying energy shifts or splittings that would allow a conclusion about their origin. In CsPbBr3, we uncover both key signatures: Upon cooling, orthorhombic replica bands emerge which had eluded earlier studies. This includes an extra valence band maximum at {\Gamma} which can even be distinguished at room temperature. Most importantly, band narrowing along {\Gamma}-M, a splitting at {\Gamma}, and the lifting of degeneracy between nonequivalent M points, all of several 100 meV, become apparent. Temperature-dependent x-ray diffraction, used as input for band structure calculations, links these effects directly to tilts and rotations of the PbBr6 octahedra. Our results uncover a strong electron-lattice interaction which is at the heart of so-far unresolved questions concerning polaronic transport, dynamic disorder, and exciton trapping in halide perovskites.

cond-mat.mtrl-sci

Halide Perovskites as Spin-1 Dirac Materials

Halide perovskites are a promising class of materials for optoelectronic and photovoltaic applications, exhibiting high power conversion efficiency due to strong light absorption and long carrier diffusion lengths. While various aspects of their crystal and electronic structure have been studied, we identify a fundamental property previously overlooked that may significantly impact their efficiency. We demonstrate that halide perovskites realize a three-dimensional (3D) Lieb lattice, giving rise to a gapped 3D Dirac cone of spin-1 fermions. This leads to a fivefold reduction in effective mass compared to a conventional cubic structure and suppressed carrier backscattering due to Klein tunneling. Our conclusions are supported by band structure calculations and angle-resolved photoemission spectroscopy from CsPbBr$_3$ and CsSnBr$_3$. In particular, we reveal the transformation of the flat band of the Lieb lattice and the emergence of a dark corridor effect in photoemission from the Dirac cone, which increases as the band gap is decreased from CsPbBr$_3$ to CsSnBr$_3$.

cond-mat.mtrl-sci

The Potential of Geminate Pairs in Lead Halide Perovskite revealed via Time-resolved Photoluminescence

Photoluminescence (PL) under continuous illumination is commonly employed to assess voltage losses in solar energy conversion materials. However, the early temporal evolution of these losses remains poorly understood. Therefore, we extend the methodology to time-resolved PL, introducing the concepts of geminate PL, doping PL, and sibling PL to quantify the transient chemical potential of photogenerated electron-hole pairs and key optoelectronic properties. Analyzing the initial PL amplitudes reveals hot charge carrier separation for around 100 nm and is likely limited by the grain size of the triple cation perovskite. The following PL decay is caused by the diffusive separation of non-excitonic geminate pairs and time-resolves a fundamental yet often overlooked energy loss by increasing entropy. For triple-cation halide perovskite, we measure a "geminate correlation energy" of up to 90 meV, persisting for ~ten nanoseconds. This energy is unutilized in standard solar cells and is considered lost in the Shockley-Queisser model. Therefore, this geminate energy could substantially enhance the device's efficiency, particularly under maximum power point and low-illumination conditions.

cond-mat.mtrl-sci

Increasing the Collection Efficiency in Selenium Thin-Film Solar Cells Using a Closed-Space Annealing Strategy

Elemental selenium is a promising wide-bandgap ($E_\mathrm{G}\approx$ 1.95 eV) photovoltaic material for the next generation of thin-film solar cells. To realize high-efficiency selenium solar cells, it is crucial to optimize the crystallization process of the selenium thin-film photoabsorber. However, the high vapor pressure of selenium restricts the processing conditions to a compromise between the growth of large crystal grains and the formation of pinholes. In this study, we introduce a closed-space annealing (CSA) strategy designed to suppress the sublimation of selenium, enabling thermal annealing processes at higher temperatures and for longer periods of time. As a result, we consistently improve carrier collection and the overall photovoltaic device performance in our selenium solar cells. By characterizing the carrier dynamics in our devices, we conclude that the observed improvements result from a reduction in charge transfer resistance rather than an increase in carrier diffusion length. The CSA strategy is a promising method for controlling surface morphology and roughness without reducing crystal grain sizes, which paves the way for further advancements in the efficiency and reproducibility of selenium thin-film solar cells.

cond-mat.mtrl-sci

Photovoltaic potential of tin perovskites revealed through layer-by-layer investigation of optoelectronic and charge transport properties

Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. Among tin perovskites, FASnI3 (CH4N2SnI3) shows optimum band gap, and easy processability. However, the performance of FASnI3 based solar cells is incomparable to lead perovskites for several reasons, including energy band mismatch between the perovskite absorber film and the charge transporting layers (CTLs) for both types of carriers, i.e., for electrons (ETLs) and holes (HTLs). However, the band diagrams in the literature are inconsistent, and the charge extraction dynamics are poorly understood. In this paper, we study the energy band positions of FASnI3 based perovskites using Kelvin probe (KP) and photoelectron yield spectroscopy (PYS) to provide a precise band diagram of the most used device stack. In addition, we analyze the defects within the current energetic landscape of tin perovskites. We uncover the role of bathocuproine (BCP) in enhancing the electron extraction at the fullerene C60/BCP interface. Furthermore, we used transient surface photovoltage (tr-SPV) for the first time for tin perovskites to understand the charge extraction dynamics of the most reported HTLs such as NiOx and PEDOT, and ETLs such as C60, ICBA, and PCBM. Finally, we used Hall effect, KP, and time-resolved photoluminescence (TRPL) to estimate an accurate value of the p-doping concentration in FASnI3 and showed a consistent result of 1.5 * 1017 cm-3. Our findings prove that the energetic system of tin halide perovskites is deformed and should be redesigned independently from lead perovskites to unlock the full potential of tin perovskites.

cond-mat.mtrl-sci

Is Cu$_{3-x}$P a semiconductor, a metal, or a semimetal?

Despite the recent surge in interest in Cu$_{3-x}$P for catalysis, batteries, and plasmonics, the electronic nature of Cu$_{3-x}$P remains unclear. Some studies have shown evidence of semiconducting behavior, whereas others have argued that Cu$_{3-x}$P is a metallic compound. Here, we attempt to resolve this dilemma on the basis of combinatorial thin-film experiments, electronic structure calculations, and semiclassical Boltzmann transport theory. We find strong evidence that stoichiometric, defect-free Cu$_3$P is an intrinsic semimetal, i.e., a material with a small overlap between the valence and the conduction band. On the other hand, experimentally realizable Cu$_{3-x}$P films are always p-type semimetals natively doped by copper vacancies regardless of $x$. It is not implausible that Cu$_{3-x}$P samples with very small characteristic sizes (such as small nanoparticles) are semiconductors due to quantum confinement effects that result in opening of a band gap. We observe high hole mobilities (276 cm$^2$/Vs) in Cu$_{3-x}$P films at low temperatures, pointing to low ionized impurity scattering rates in spite of a high doping density. We report an optical effect equivalent to the Burstein-Moss shift, and we assign an infrared absorption peak to bulk interband transitions rather than to a surface plasmon resonance. From a materials processing perspective, this study demonstrates the suitability of reactive sputter deposition for detailed high-throughput studies of emerging metal phosphides.

cond-mat.mtrl-sci

Understanding the growth mechanism of BaZrS$_3$ chalcogenide perovskite thin films from sulfurized oxide precursors

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable solution for effective synthesis, especially from the perspective of circumventing the difficulty of handling alkali earth metals. In this work, we explore in detail the synthesis of BaZrS3 from Ba-Zr-O oxide precursor films sulfurized at temperatures ranging from 700 {\deg}C to 1000 {\deg}C. We propose a formation mechanism of BaZrS3 based on a two-step reaction involving an intermediate amorphization step of the BaZrO3 crystalline phase. We show how the diffusion of sulfur (S) species in the film is the rate-limiting step of this reaction. The processing temperature plays a key role in determining the total fraction of conversion from oxide to sulfide phase at a constant flow rate of the sulfur-containing H2S gas used as a reactant. Finally, we observe the formation of stoichiometric BaZrS3 (1:1:3), even under Zr-rich precursor conditions, with the formation of ZrO2 as a secondary phase. This marks BaZrS3 quite unique among the other types of chalcogenides, such as chalcopyrites and kesterites, which can instead accommodate quite a large range of non-stoichiometric compositions. This work opens up a pathway for further optimization of the BaZrS3 synthesis process, straightening the route towards future applications of this material.

cond-mat.mtrl-sci

High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell

Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite tandems is lagging far behind their rigid counterparts primarily due to the challenges in developing efficient wide-bandgap (WBG) perovskite solar cells on the flexible substrates as well as the low open-circuit voltage (VOC) in the WBG perovskite subcell. Here, we report that the use of self-assembled monolayers as hole-selective contact effectively suppresses the interfacial recombination and allows the subsequent uniform growth of a 1.77 eV WBG perovskite with superior optoelectronic quality. In addition, we employ a post-deposition treatment with 2-thiopheneethylammonium chloride to further suppress the bulk and interfacial recombination, boosting the VOC of the WBG top cell to 1.29 V. Based on this, we present the first proof-of-concept four-terminal all-perovskite flexible TSC with a PCE of 22.6%. When integrating into two-terminal flexible tandems, we achieved 23.8% flexible all-perovskite TSCs with a superior VOC of 2.1 V, which is on par with the VOC reported on the 28% all-perovskite tandems grown on the rigid substrate.

physics.app-ph

Revealing the doping density in perovskite solar cells and its impact on device performance

Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterisation techniques comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the doping density. The obtained values are subsequently compared to the charge on the electrodes per unit volume at short-circuit conditions, which amounts to roughly $10^{16}$ cm$^{-3}$. This figure equals the product of the capacitance $C$ and the built-in potential $V_\mathrm{bi}$ and represents the critical limit below which doping-induced charges do not influence the device performance. The experimental results demonstrate consistently that the doping density is below this critical threshold ($<10^{12}$ cm$^{-3}$ which means $<CV_\mathrm{bi}$ per unit volume) for all common lead-based metal-halide perovskites. Nevertheless, although the density of doping-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations which confirm that the device performance is not affected by such low doping densities.

cond-mat.mtrl-sci

Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor

With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be responsible for it. Besides, the feasibility of alternative deposition techniques has not been clarified and optical characterization is generally lacking. In this work, we demonstrate reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic doping by C and Si. We obtain the highest hole concentration reported to date for p-type BP ($5 \times 10^{20}$ cm$^{-3}$) using C doping under B-rich conditions. We also confirm that bipolar doping is possible in BP. An anneal temperature of at least 1000 $^\circ$C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are much stronger than predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

cond-mat.mtrl-sci

Comment on "Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells"

Ni et al. report minimum bulk trap densities of 10^11 cm-3 and 1-4 orders change in interfacial trap densities derived from drive-level capacitance profiling of lead halide perovskites. From basic electrostatic arguments, we show that such bulk trap densities cannot be resolved for a p-i-n perovskite solar cell for the reported layer thicknesses, while the apparent interfacial charge densities are a consequence of the geometrical capacitance and of charge injection into the perovskite layer.

physics.app-ph

Water adsorption enhances electrical conductivity in transparent p-type CuI

CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a two-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 hours, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. Based on the large intra-grain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility.

physics.app-ph

Upper limit to the photovoltaic efficiency of imperfect crystals

The Shockley-Queisser (SQ) limit provides a convenient metric for predicting light-to-electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing layer. In reality, few materials approach this radiative limit. We develop a formalism and a computational method to predict the maximum photovoltaic efficiency of imperfect crystals from first principles. Our scheme includes equilibrium populations of native defects, their carrier-capture coefficients, and the associated recombination rates. When applied to kesterite solar cells, we reveal an intrinsic limit of 20% for $\mathrm{Cu_2ZnSnSe_4}$, which falls far below the SQ limit of 32%. The effects of atomic substitution and extrinsic doping are studied, leading to pathways for enhanced efficiency of 31%. This approach can be applied to support targeted-materials selection for future solar-energy technologies.

physics.comp-ph

Pathways towards 30% efficient single-junction perovskite solar cells and the role of mobile ions

Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline silicon cells are not well understood. Here, we establish a simulation model that well describes efficient p-i-n type perovskite solar cells and a range of different experiments. We then study important device and material parameters and we find that an efficiency regime of 30% can be unlocked by optimizing the built-in potential across the perovskite layer by using either highly doped (10^19 cm-3), thick transport layers (TLs) or ultrathin undoped TLs, e.g. self-assembled monolayers. Importantly, we only consider parameters that have been already demonstrated in recent literature, that is a bulk lifetime of 10 us, interfacial recombination velocities of 10 cm/s, a perovskite bandgap of 1.5 eV and an EQE of 95%. A maximum efficiency of 31% is predicted for a bandgap of 1.4 eV. Finally, we demonstrate that the relatively high mobile ion density does not represent a significant barrier to reach this efficiency regime. Thus, the results of this paper promise continuous PCE improvements until perovskites may become the most efficient single-junction solar cell technology in the near future.

cond-mat.mtrl-sci

High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition

The incorporation of even small amounts of strontium (Sr) into lead-based quadruple cation hybrid perovskite solar cells results in a systematic increase of the open circuit voltage (Voc) in pin-type perovskite solar cells. We demonstrate via transient and absolute photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer and specifically at the perovskite/C60 interface. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C60 electron-transporting layer. The resulting solar cells exhibited a Voc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, bringing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3%. Our results demonstrate very high Voc values and efficiencies in Sr-containing quadruple cation perovskite pin solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer.

physics.app-ph

The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells

Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the quasi-Fermi level splitting (QFLS) of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination current for a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V_OC by inducing an additional non-radiative recombination current that is significantly larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V_OC of the device. The results also show that the V_OC equals the internal QFLS in the absorber layer of (pin, nip) cells with selective CTLs and power conversion efficiencies of up to 21.4%. However, in case of less selective CTLs, the V_OC is substantially lower than the QFLS which indicates additional losses at the contacts and/or interfaces. The findings are corroborated by rigorous device simulations which outline several important considerations to maximize the V_OC. This work shows that the real challenge to supress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in the suppression of carrier recombination at the perovskite/CTL interfaces.

physics.app-ph

Effects of disorder on carrier transport in Cu$_2$SnS$_3$

In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu$_2$SnS$_3$ thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu$_2$SnS$_3$. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu$_2$SnS$_3$ displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu$_2$SnS$_3$-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS.

cond-mat.mtrl-sci

Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory

Electronic structure calculations within screened-exchange hybrid density functional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 are localized hole traps, which can be attributed to the experimentally observed N2 level. In contrast, GaCu antisites and their defect complexes with copper vacancies exhibit an electron trap level, which can limit the open-circuit voltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys. Low-temperature photoluminescence measurements in CuGaSe2 thin-film solar cells show a free-to-bound transition at an energy of 1.48 eV, in very good agreement with the calculated transition energy for the GaCu antisite. Since the intrinsic DX center does not exhibit a pinning level within the band gap of CuInSe2, metastable DX behaviour can only be expected for GaCu antisites.

cond-mat.mtrl-sci