arXiv subjects

Thomas W. Keal

Publications and source records attributed to Thomas W. Keal.

4 recordsLinked to original sources

arXiv2026

Scientific applications of quantum computing: challenges and opportunities

The predictive simulation of molecules and materials has had a broad and significant impact. It nevertheless remains constrained by the cost of accurately treating electronic correlation, excited states, and complex energy landscapes. Quantum computing offers a fundamentally different computational paradigm in which quantum states are encoded and manipulated directly rather than approximated on classical hardware. Here we discuss where this approach may provide a genuine scientific advantage in chemistry, materials science, and biochemistry. Promising directions include the high-accuracy treatment of correlated active spaces, improved excited-state simulations, and accelerated exploration of combinatorial structure spaces. The central challenge is therefore not qubit scaling alone, but demonstrably chemically meaningful gains in predictive reliability. We argue that near-term value is most likely to come from disciplined workflow integration rather than wholesale replacement of classical methods. Noisy physical devices, error-mitigated utility experiments, early fault-tolerant devices, and fully fault-tolerant quantum computers offer different scientific prospects, and claims of usefulness must be tied to the specific regime being discussed. Quantum computing will become scientifically valuable when it demonstrably reduces uncertainty in computed energies, rates, spectra, or materials stability after the full costs of state preparation, measurement, error handling, and coupling to classical simulation are included.

quant-ph↗

arXiv2026

The Future of Computing for Materials Science Challenges

Materials discovery increasingly relies on the coordinated use of theory, computation, experiment, data-driven methods, and emerging quantum technologies, yet the full potential of these tools is realised only when they operate within workflows that reflect the complexity of real systems. This perspective summarises current capabilities, limitations, and opportunities across these domains, drawing on contributions from academia, industry, and national laboratories to identify the scientific and structural requirements for more reliable and efficient discovery. Classical simulations provide broad coverage across design spaces, while experimental measurements reveal degradation, heterogeneity, and kinetic processes that determine performance under realistic conditions. Machine learning accelerates exploration when supported by well-curated datasets with clear provenance and uncertainty quantification, and quantum computing offers promising routes into correlated electronic behaviour when aligned with properties that influence engineering decisions. Collectively, these insights highlight the need for reproducible workflows, shared data standards, realistic benchmarks, and a research culture that prepares scientists to work across paradigms. By integrating these methodological and organisational elements, the community can move toward discovery processes that deliver robust predictions, support confident decision making, and shorten the path from conceptual design to deployable materials.

cond-mat.mtrl-sci↗

arXiv2019

Donor and Acceptor Characteristics of Native Point Defects in GaN

The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals...

cond-mat.mtrl-sci↗

arXiv2018

Assignment of multiband luminescence due to the gallium vacancy-oxygen defect complex in GaN

Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect complex in GaN. The formation energy of the gallium vacancy is largely reduced in n-type GaN by complexing with oxygen, while thermodynamic and optical transition levels remain within the band gap. We study the spectroscopy of this complex using a hybrid quantum-mechanical molecular-mechanical (QM/MM) embedded-crystal approach. We reveal how a single defect center can be responsible for multiband luminescence, including the ubiquitous yellow luminescence signature observed in n-type GaN, owing to the coexistence of diffuse (extended) and compact (localized) holes.

cond-mat.mtrl-sci↗